Based on the Large Sky Area Multi-Object Fiber Spectroscopic Telescope (LAMOST) medium-resolution spectroscopic survey (MRS), we report the discovery of nine super Li-rich unevolved stars with A(Li) > 3.8 dex. These objects show unusually high levels of lithium abundances, up to three times higher than the meteoritic value of 3.3 dex, which indicates that they must have experienced a history of lithium enrichment. It is found that seven of our program stars are fast rotators with v sin i > 9 km s(-1), which suggests that the accretion of circumstellar matter may be the main contributor to the lithium enhancement of these unevolved stars; however, other sources cannot be excluded.

OBJECTIVE:This study evaluates the efficacy of statin-ezetimibe co-therapy compared to statin monotherapy in reducing cardiovascular and/or cerebrovascular disease (CVD) prevalence in diabetes and non-diabetes patients.PATIENTS AND METHODS:Literature search was conducted in electronic databases and study selection was based on pre-determined eligibility criteria. Random-effects metanalyses were performed to examine the risk of CVD incidence between statin-ezetimibe co-therapy and statin monotherapy and subgroups were performed to examine the significance of differences between diabetic and non-diabetic individuals. A pooled analysis of hazard ratios of statin-ezetimibe combination versus statin monotherapy in the prevalence of CVD reported by the individual studies was also performed.RESULTS:8 studies (136893 individuals; 80790 diabetics, 85555 non-diabetics; age 63.5 years [95% confidence interval (CI) 61.2, 65.8]; 61.5% [95% CI 55.2, 67.8] males) were included. Follow-up duration was 45 months [95% CI 27.5, 62.5]. Risk of CVD prevalence was significantly less with ezetimibe-statin than with statin alone in both diabetes (RR 0.69 [95% CI 0.67, 0.73]; p<0.00001) and in non-diabetes (RR 0.68 [95% CI 0.52, 0.90]; p=0.006) subjects (subgroup difference: chi2=0.00; p=0.97). Risk of prevalence of stroke was significantly less with ezetimibe-statin than with statin monotherapy in diabetes (RR 0.74 [95% CI 0.56, 0.98]; p=0.03) but non-significantly less in non-diabetes patients (RR 0.74 [95% CI 0.39, 1.41]; p=0.39) and this sub-group difference was also not statistically significant (chi2=0.00; p=0.99).CONCLUSIONS:Statin-ezetimibe co-therapy is found more efficacious than statin monotherapy in reducing the incidence of CVD with no significant difference between diabetic and non-diabetic individuals.

The aim of this study was to evaluate the control of blood glucose and glycosylated hemoglobin A1c (HbA1c) and its influencing factors, in elderly type 2 diabetic mellitus (T2DM) patients undergoing comprehensive management. After years of comprehensive prevention of and control measures for diabetes, elderly T2DM patients who were receiving long-term health care were comprehensively evaluated through an annual physical examination. In addition to routine health examination, the patients were required to undergo HbA1c measurement. Among 688 patients, 652 were men and 36 were women, with a mean age of 78.2 ± 9.1 years. The average HbA1c was 6.6 ± 0.9%. A total of 50.6% of the patients had HbA1c <6.5%, whereas 76.3% had HbA1c <7.0%. Among all patients, 77.1, 46.4, 66.1, 67.8, 36.3, and 57.4% achieved the target total cholesterol, low-density lipoprotein (LDL), high-density lipoprotein (HDL), triglyceride (TG), blood pressure, and body mass index (BMI) levels, respectively. The duration of disease and type of treatment, as well as the LDL, HDL, TG, BMI, and blood pressure levels, were significantly associated with HbA1c control. No patient was admitted because of ketoacidosis or hyperosmolar nonketotic diabetic coma in 10 years. Approximately half of the T2DM patients achieved the target HbA1c level. The more effective blood glucose control observed in our study compared with previous studies can be attributed to the effective monitoring of medical conditions and comprehensive management of patients.

Under the two initial 1-D one parameter velocity distribution forms ( one is normal, the other is exponential), the z direction scale height evolution of normal neutron stars in the Galaxy is studied by numerical simulation. We do statistics for the cases at different time segments, also do statistics for the cumulative cases made of each time segment. The results show in the cumulative cases the evolution curves of the scale heights are smoother than in the each time segment, i. e., the cumulation improve the signal-to-noise ratio. Certainly the evolution cases are different at different Galactic disk locations, which also have very large difference from the average cases in the whole disk. In the initial stages of z evolution of normal neutron stars, after the beginning transient states, the cumulative scale heights increase linearly with time, and the cumulative scale height increasing rates have linear relationship with the initial velocity distribution parameters, which have larger fluctuation in the vicinity of the Sun than in the whole disk. We utilize the linear relationship of the cumulative scale height increasing rates vs. the initial velocity distribution parameters in the vicinity of the Sun to make comparison with the observation near the Sun. The results show if there is no magnetic decay, then the deserved initial velocity parameters are obvious lower than the present well known results from some authors; whereas if introducing magnetic decay, for the 1-D normal case we can make consistence among concerning results using magnetic decay time values which are supported by some authors, while for the 1-D exponential case the results show the lackness of young pulsar samples in the larger z in the vicinity of the Sun. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC :O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC :O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC :O film, which is attributed to the high barrier height induced by electron trapping in the SiC :O film. (C) 2005 The Electrochemical Society.

Spherical and well-separated tungsten nanocrystals embedded in the SiO2 layer are demonstrated for the low-voltage nonvolatile memory device. The tungsten dots are formed, based on the thermal oxidation of the tungsten silicide, with a mean size and aerial density of 4.5 nm and 3.7 x 10(11)/ cm(2), respectively. A pronounced capacitance-voltage hysteresis is observed with a memory window of 0.95 V under the 3 V programming voltage. Also, the endurance of the memory device is not degraded up to 106 write/erase cycles. (C) 2005 The Electrochemical Society.

A novel method to suppress capacitive coupling between data line and pixel electrode for IPS and FFS pixels has been proposed in this work. By making a slit structure on ITO electrode close to data line at a well-calculated and designed location, the capacitive coupling noise can be drastically reduced to 4% compared with conventional structure. A frequency response analysis for this circuit has also been performed to ensure all operation frequency for panels is feasible.

With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP)CVD Si3N4. Also, low-temperature (2000degreesC) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780degreesC) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable. (C) 2004 The Electrochemical Society.

The leakage behavior of the quasi-superlattice structure has been characterized by current–voltage measurements at room temperature and 50 K. A resonant tunnelinglike leakage characteristic is observed at low temperature. The resonant tunneling occurs at around 2, 5.2, and 7 V under a gate voltage swept from 0 to 10 V. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-lattice structure and suggests that the considerations of the operating voltage for the two-bit per cell nonvolatile-memory device need to be taken into account.

2 ! is demonstrated. Under a suitable operating voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel charge storage within the quasi- superlattice. The multilevel charge storage provides a feasible design for the 2-bit-per-cell nonvolatile memory devices. Also, the leakage behavior of the quasi-superlattice structure has also been characterized by current-voltage measurements at room tem- perature and low temperatures. The resonant tunneling-like leakage characteristic is observed at low temperatures. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-superlattice structure, and this suggests that consideration of the operating voltage for the 2-bit-per-cell nonvolatile memory device needs to be taken into account.