Spatially resolved extreme ultraviolet reflectometry is presented in application to a local characterization of thin non-uniform contamination layers. Sample reflectivity mapping is performed, demonstrating high chemical sensitivity of the technique. Amorphous Al₂O₃ and carbon are determined as the contaminants of the studied silicon wafer. The results correlate with those obtained by energy-filtering photoemission electron microscopy. A laboratory tool is developed that is capable of multi-angle (2°-15°) and spectrally broadband (9.5-17 nm) extreme ultraviolet reflectometry at grazing incidence combined with a reduced sample illumination spot size, enabling spatially resolved metrology. A minimum EUV spot size of 25×30 μm in the sample plane is achieved experimentally.

In this Letter, the authors present a design study on YAG:Ce scintillator plates with a microstructured and coated surface. The goal of the study is to improve the outcoupling efficiency and to optimize the directionality of the scintillation light with respect to indirect image detection in the extreme ultraviolet spectral range (5-50 nm wavelength). In a geometric optical simulation, a gain in outcoupling efficiency by over a factor of 4 is shown while the directionality of the scintillation light is improved with respect to state-of-the-art plane scintillator plates.

Modern nanotechnology is constantly raising demands to quality and purity of thin films and interlayer interfaces. As thicknesses of employed layers decrease to single nanometers, traditional characterization tools are no longer able to satisfy throughput, precision or non-destructibility requirements. Extreme ultraviolet (EUV) and soft X-ray reflectometry has not only demonstrated the ability to detect sub-nm thickness variations but also was shown to be very sensitive to chemical composition changes. Since the laboratory radiation sources in this wavelength range often emit in a relatively broad spectral range, a spectroscopic EUV reflectometry has been developed with the added benefit of a rapid measuring time on the order of milliseconds to seconds. In this paper, the extension of the method to multi-angle measurements will be presented. It allows to reduce a number of fit parameters in the analysis model, making the method suitable for complex samples of unknown composition. First experimental examples for Si-based layer systems measured under grazing incidence angles between 2° and 15° will be demonstrated and discussed. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

In this contribution table-top, lab-based microscopes in the extreme ultraviolet (EUV) in transmission and reflection mode as well as in the soft x-ray will be presented. The application for the transmission microscope is the investigation of thin film nanostructures and particles, the application of the reflection microscope is mask blank inspection for EUV lithography. The soft x-ray water window microscope has been developed for investigations of organic samples and nanocrystals in liquids.

The authors report on experimental and simulative scattering analyses of phase and amplitude defects found in extreme ultraviolet multilayer mirrors, such as mask blanks for EUV lithography. The goal of the analyses is to develop a novel mask blank inspection procedure using one single inspection tool that allows to determine whether a defect is a surface type (amplitude) defect, or a buried type (phase) defect. The experiments were carried out with an actinic dark-field reflection microscope. Programmed defects of both types were fabricated, using different nanostructuring techniques. Analytical and rigorous scattering simulations were carried out to predict and support the experimental results.

This chapter contains five sections related to advances in technology and characterization. The first section investigates influence of Ti top electrodes on the oxidation state of epi-taxially grown STO thin films and the corresponding resistive switching devices. The second section shows comparison of work diode- and CO2-laser heater versions. The third section reviews the influence of ALD processing and different top electrodes on the structural, morphological and electrical properties of ZrO2. The fourth section views the resistance switching characteristic of Nb2O5 thin films integrated into Pt/Nb2O5/Ti/Pt micro cross bar structures on Si/SiO2 substrates. The fifth section considers the investigations of CDW in Dy5Ir4Si10 at different temperatures using transmission electron microscopy (TEM) techniques including electron diffraction and dark-field imaging. Controlled Vocabulary Terms electron diffraction; switching; thin films; transmission electron microscopy

We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.

There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners.With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm(2). Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project.For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan.For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm(2) sr) from < 20 mu m source size have been demonstrated.

One of the most challenging requirements for the next generation EUV lithography is an extremely low amount of critically sized defects on mask blanks. Fast and reliable inspection of mask blanks is still a challenge. Here we present the current status of the development of our actinic Schwarzschild objective based microscope operating in dark field with EUV discharge produced plasma source.For characterization of the microscope performance, several programmed defect structures - artificial pits and bumps were created on top of multilayer mirror (ML) surfaces and investigated both with EUV microscope and atomic force microscope (AFM). Defect size sensitivity of actinic inspection in dark field mode without resolving the defects is under study. The dependency between defect shape, size and position in relation to the ML surface and its scattering signal will be discussed. Furthermore, first results of a defect mapping algorithm are presented.

There is a strong demand for stand alone actinic tools for high volume manufacturing of EUV mask infrastructure. Among such metrology tools reflectometry, blank inspection, mask defect and pattern inspection are of special need to be in pilot lines of EUVL roadmaps expected to prepare production in 2012 to 213. With existing lab sources and metrology tool technology we expect to make significant contributions.With the existing EUV-reflectometer developed for mask blank characterization accuracies of < 0.1 % in peak reflectivity precision and 0.002 nm for centroid wavelength (CWL_50. 1 sigma) are routinely achieved on both reflective multilayer coated and absorbers coated blanks. Furthermore, new upgrades for fiducial mark detection in the reflectometer allow for measurements on structured masks with precise positioning (better than 50 mu m). Meanwhile, detail studies on reproducibility and sensibility of measurement versus tilt angle have been performed. These studies shows less than 1% change in peak reflectometry due to 500 mu rad tilt, while accuracy of alignment is < 100 mu rad. We will demonstrate our recent achievements and further plans to along the roadmap requirements.Actinic mask blank defect inspection is considered crucial and is required at mask blank suppliers and perhaps in mask houses. For this aim, a proof of concept experiment based on an EUV microscope has been set up. The first results are presented together with tool extrapolation. We analyze the achievable defect resolving power and its localization with limited performance state-of-the-art collecting objectives. Possible alternative approaches are discussed.

An actinic EUV microscope for defect detection on mask blanks for operation in dark field using table top discharge produced plasma (DPP) source has been developed. Several test structures (pits and bumps) and natural defects on multilayer mirrors were characterized with an atomic force microscope (AFM) and then investigated by our Schwarzschild Objective (SO) based EUV microscope. Possible defect detection limits with large field of view (FOV) and moderate magnification will be discussed in terms of required source photon flux and detection camera performance.