Objective Traditional optical lenses face significant challenges in miniaturization and system integration due to limitations in refractive index modulation capabilities and chromatic aberration correction techniques. Optical metasurfaces are artificial structures composed of subwavelength units arranged in specific patterns. By adjusting the size and arrangement of these structural units, unprecedented modulation of the phase, amplitude, and polarization of electromagnetic waves can be achieved. With its remarkable advantages of ultra-thin profile, lightweight construction, and ease of integration, the metasurface lens has emerged as a revolutionary planar lens technology. However, achromatic designs for metamaterials in the visible spectrum face dual challenges: strong dispersion and structural resonance. The emergence of scintillator materials in X-ray imaging offers a new opportunity to resolve this conflict. These materials absorb X-rays and emit narrow-band visible light with a full width at half maximum (FWHM) below 20 nm, achieving near-monochromatic emission under specific processes. The narrow-band characteristics of such light sources inherently suppress focal shift and resolution degradation caused by chromatic aberration, enabling optical components to be applied in X-ray detection without complex broadband achromatic designs. We proposed an embedded hemispherical cylindrical metalens design, achieving 87.78% focusing efficiency at the 530 nm peak wavelength of perovskite bromine?lead?cesium quantum dots. This is attributed to the hemispherical structure's ability to excite higher-order Mie scattering modes, generating enhanced localized electric fields at the nano-unit/substrate interface. This results in five percentage points increase in average transmittance compared to conventional structures across the 480?580 nm wavelength range. Furthermore, the hemispherical design effectively reduces defects such as coating voids, improving yield and enabling device fabrication. The metalens array can be fabricated and integrated with CMOS detectors in the future to get high-resolution X-ray imaging detection devices. Methods The micro-nano structure selected in this study is a sphere-cylinder composite structure. Serving as the basic unit of the metalens, this structure consists of a SiO2 substrate, a TiO2 cylinder, and a hemisphere, with the detector integrated inside the SiO2 substrate. The period of the unit structure is set to 520 nm; the radius ranges from 50 nm to 150 nm; the height varies between 0.5 mu m and 1.5 mu m, and the operating wavelength is configured in the 480-580 nm band. To achieve full phase coverage, the height of the cylinder is finally determined to be 0.8 mu m after comprehensively balancing the phase modulation capability and transmittance. This structure was compared with metalenses of two other structures: one is a semi-embedded cylindrical structure with a height of 0.8 mu m and an embedding depth of 0.1 mu m; the other is a pure cylindrical unit structure with a height of 0.9 mu m. All three metalenses were designed using the propagation phase modulation method, and the finite-difference time-domain (FDTD) simulation was employed to calculate the focal length of the metalenses and the focusing efficiency at the focal point under different radii. Results and Discussions The FDTD simulation results show that the focusing efficiency of this metalens reaches 87.78% at a wavelength of 530 nm, with a FWHM of 643.71 nm and a transmittance exceeding 80%. Within the 480?580 nm wavelength band, the average focusing efficiency of the hemispherical structure is 81.94%, which is approximately five percentage points higher than that of the traditional cylindrical structure (76.90%) and the semi-embedded cylindrical structure (77.01%). This advantage is attributed to the embedded hemispherical design, which enhances the localization of the optical field and reduces modal loss. Further analysis indicates that by optimizing the refractive index matching between the substrate and the nanostructure, the hemispherical structure achieves stable focusing performance in the 480?580 nm band. When used in combination with a narrow-band scintillator (e.g., emission wavelength of 12 nm), the focal shift can be controlled within 1.2 mu m, effectively suppressing chromatic aberration. In terms of optical field distribution, the far-field light intensity concentration of the hemispherical structure is significantly superior to that of the other structures, and the fluctuation range of the FWHM of its Airy disk is only +/- 4 nm, verifying the diffraction-limited focusing capability of this design. Conclusions We propose a visible-light polarization-insensitive metamaterial-based metalens design, featuring a core structure comprising cylindrical TiO2 nanocolumns on a SiO2 substrate and a hemispherical TiO2 atomic array within the substrate. By adjusting the radius and height of the nanostructures, full coverage of 0?2 pi phase delays is achieved. FDTD simulations reveal that this structure achieves a focusing efficiency of 87.78% at a wavelength of 530 nm, with a FWHM of 643.71 nm and a transmittance exceeding 80%. A comparison among the cylindrical structure, semi-embedded cylindrical structure, and embedded hemispherical structure reveals that the hemispherical structure achieves an average focusing efficiency of 81.94% in the 480?580 nm wavelength band, approximately five percentage points higher than the 76.90% of the traditional cylindrical structure and the 77.01% of the semi-embedded structure. This advantage stems from the enhanced optical field localization and energy coupling efficiency enabled by Mie scattering. When combined with a narrow-band scintillator with an emission range of only 12 nm, the focal shift is merely 1.2 mu m, which effectively suppresses the focal drift caused by chromatic aberration.In terms of fabrication process, the introduction of the hemispherical structure can reduce defects such as coating holes and improve the yield rate. This metalens demonstrates great potential in super-resolution imaging (with a numerical aperture NA=0.44), X-ray detection, and integrated optical systems. In the future, efforts will be made to optimize the integration of detection systems, so as to promote its practical application in the next-generation X-ray imaging technology.

High-power blue laser sources operating at 450 nm with exceptional beam quality are in high demand for laser processing, medical surgery, and full-color displays. In this work, we demonstrate GaN-based edge-emitting lasers (EELs) featuring a width-modulated ridge waveguide specifically designed to suppress higher-order lateral modes. We accurately extract the epitaxial parameters of the GaN material to inform the waveguide design. The resulting lasers exhibit no signs of degradation even under continuous-wave (CW) operation at an injection current of 1.5 A. And the lasers emit directly at ∼450 nm, eliminating the complexity of second-harmonic generation. The tailored width-modulated structure significantly improves the beam quality factor ( M 2 ), particularly in the lateral direction. The lateral divergence angle is narrowed to less than 3°. Moreover, our device exhibits nearly diffraction-limited performance with a lateral beam quality factor ( M X 2 ) below 2, yielding a remarkable brightness of 339.17 MWcm −2 sr −1 for a GaN-based single blue emitter. No significant degradation is observed during the 30-hour test. This work underscores the great potential of width-modulated waveguide architectures for next-generation high-brightness GaN-based blue laser sources.

All-dielectric metasurfaces based on quasi-bound states in the continuum (quasi-BICs) have emerged as a powerful platform for nanophotonic sensing, as they support high-Q resonances and strong near-field enhancements. Herein, we propose and numerically investigate an asymmetric bow-tie metasurface composed of two silicon semi-cylinders with unequal radii and a central bar to achieve a quasi-BIC resonance with a Q-factor of 11,000. The transition mechanism of the BIC modes in the asymmetric bow-tie metasurface is analyzed. Additionally, the spectral features of the asymmetric bow-tie metasurface as a function of the refractive index and temperature of the local environment are also investigated. The proposed structure exhibits a refractive index sensitivity of 454 nm/RIU and a temperature sensitivity of 134 pm/°C. Furthermore, a high figure of merit (FOM) of 3159 RIU−1 is achieved, and the nearly 100% modulation depth maintained across three distinct resonance dips. Our study suggests that the proposed asymmetric bow-tie metasurface offers a promising approach for the development of high-sensitivity biosensing platforms.

A facile one-step hydrothermal method has been reported to synthesize the alpha-Fe2O3 nanosheet arrays with the preferred orientation along the [104] direction on the ITO substrate. The alpha-Fe2O3 nanosheet arrays-based W/alpha-Fe2O3/ITO memristor has been achieved by depositing the circular W top electrodes on the alpha-Fe2O3 nanosheet arrays. The as-prepared W/alpha-Fe2O3/ITO memristor shows a reliable nonvolatile bipolar resistive switching behavior with the high resistance ratio of about 103 at the reading voltage of 0.1 V, good resistance retention over 103 s, ultralow set voltage of -0.6 V and reset voltage of 0.7 V, and good durability. In addition, the tunneling conduction mechanism modified by the oxygen vacancies has been proposed and suggested to be responsible for the nonvolatile resistive switching behavior of the as-prepared W/alpha-Fe2O3/ITO memristor. This work demonstrates that the as-prepared alpha-Fe2O3 nanosheet arrays-based W/alpha-Fe2O3/ITO memristor would be a promising candidate for further ultralow power nonvolatile memory applications.

All-inorganic CsPbI3 perovskites are promising for photodetectors (PDs) owing to their superior optoelectronic properties, yet their device performance is severely restricted by interfacial defects and poor energy-level alignment at the perovskite/electron transport layer (ETL) interface. In this work, we propose a combined interfacial modification strategy by integrating pentafluorobenzoic acid (PFBA) into a 1,4-butanediamine (BDA) interlayer, achieving simultaneous defect passivation and interfacial energy-level optimization in CsPbI3 films. The resultant PFBA-modified CsPbI3 PDs realize superior self-powered performance at zero bias, including a maximum responsivity of 0.47 A $\cdot $ W ${}^{-\text{1}}$ , a specific detectivity of $\text{7.88} \times \text{10}^{\text{12}}$ Jones, a broad linear dynamic range (LDR) of 141 dB, and a fast response speed (rise/fall time = 1.2/ $\text{1.2}~\mu $ s). Meanwhile, the dark current density is reduced by one order of magnitude (from $\text{1.7} \times \text{10}^{-\text{4}}$ to $\text{1.8} \times \text{10}^{-\text{5}}$ mA $\cdot $ cm ${}^{-\text{2}}$ ) at zero bias, and the device maintains 99.6% of its initial photocurrent density after 35 days of storage in a nitrogen-filled glove box. This work offers a reliable and effective interfacial engineering route for constructing high-performance and stable all-inorganic self-powered perovskite PDs.

Efficient solar energy utilization is vital for energy structure transformation and carbon neutrality. Traditional solar absorbers, limited to single-direction absorption, fail to meet diverse application needs. This study proposes a novel bidirectional solar metamaterial absorber optimized by deep learning algorithms. The device integrates multilayer film and grating structures to achieve direction-dependent optical characteristics: narrowband absorption for specific wavelength selection from one side, and broadband absorption for efficient thermal conversion from the other. A deep neural network (DNN) model is employed to predict structural parameters, significantly enhancing design efficiency compared to traditional simulation screening. Simulation results demonstrate high-efficiency performance in both modes, with broadband absorption averaging over 96% across the solar spectrum and distinct narrowband peaks in the visible-near infrared range. Mechanism analysis reveals synergistic effects of surface plasmon resonance and Fabry-Perot resonance. By merging micro-nano optics with deep learning, this design offers a flexible, intelligent strategy for advanced solar energy systems and optical sensing applications.

In this study, (In x Ga1-x )(2)O-3 f thin films with varying indium contents were fabricated using a novel mist chemical vapor deposition (Mist-CVD) method equipped with a dual-precursor ultrasonic atomization system. This newly proposed Mist-CVD technique enables independent control of the carrier gases for Ga and In precursors, thereby overcoming the limitations of conventional single-precursor systems in tuning elemental composition. The resulting (In x Ga1-x )(2)O-3 films exhibited tunable In contents ranging from 0.05 to 0.20, corresponding to bandgaps between 4.62 eV and 4.30 eV. Characterization results showed that the film with x = 0.11 had the best crystallinity. To verify the feasibility of these films for optoelectronic applications, MSM ultraviolet photodetector was fabricated based on the (In 0.14 Ga 0.86 )(2)O-3 film demonstrating basic photoelectric performance, with a dark current of 0.86 nA,I- 254nm / I-dark ratio of 1.16x10 4 , and a responsivity of 0.52 A/W under a 12 V bias. These results indicate that the (In x Ga1-x )(2)O-3 films fabricated using the novel Mist-CVD system hold great potential for the scalable manufacturing of high-performance deep-ultraviolet optoelectronic devices.

Two-dimensional (2D) materials, with their rich electronic states and unique layered structure, hold promise for low-energy-consumption ionic memristors to advance high-performance artificial neural systems, yet challenges in large-area integration and stability remain. Here, a vertical heterostructure memristor with an Ag/ZnO/Si/MoS2/Mo/Au configuration was fabricated by directly growing MoS2 on the bottom electrode, enabling scalable fabrication of high-density devices. The memristor exhibits exceptional resistance switching stability and low operating voltages (V-SET approximate to 0.41 V, V-RESET approximate to -0.17 V), attributed to the ZnO interlayer acting as an ion migration barrier that efficiently restricts Ag ion diffusion and suppresses random conductive filament formation. Importantly, these properties enable the device to precisely mimic biological synaptic processes, including long-term potentiation/inhibition and paired pulse facilitation, while demonstrating incredibly low operational energy consumption (similar to 2.1 fJ/(mu m(2)x mu S)). The successful implementation of handwritten digit recognition further highlights the promising capabilities of this device in neuromorphic computing applications. This work presents an innovative concept for the development of a 2D material heterostructure memristor neural system with high integration, stability and low power consumption.

Owing to the excellent performance of zinc oxide materials under ultraviolet light, this paper proposes a process for fabricating ZnO/Au heterojunction nanostructures on the surface of silicon-based solar cells using anodic aluminum oxide as the template, ultimately resulting in a novel silicon-based solar cell with an embedded ZnO/Au nanostructure array. Through model optimization and analysis of the solar cells, it is found that compared with silicon-based solar cells with double grating nanostructures, silicon-based solar cells with surface silicon nanostructure arrays prepared by similar processes, and traditional planar silicon-based solar cells, the light absorption efficiency of the proposed solar cell structure is improved by 13.2%, 35.01%, and 63.78%, respectively; its short-circuit current density and power conversion efficiency reach 40 mA/cm2 and 20.17%, respectively. Meanwhile, this paper conducts an in-depth study on the performance enhancement mechanism, providing new insights for the fabrication of ZnO/Au heterojunction nanostructures and their applications in the field of solar cells.

We employ density functional theory with the hybrid functional PAW-PBE approach to systematically investigate the structural, electronic, and optical responses of x-Ga2O3 under scandium doping (x = 0.125-0.5). We found that both the bandgap and spontaneous polarization can be effectively tuned by varying the Sc content. Systematic substitution induces a substantial 47% bandgap expansion accompanied by a notable reduction in the absorption coefficient, establishing precise band engineering parameters. The lattice distortion effect caused by Sc replacing Ga sites was verified through structural optimization and convergence. Berry phase analysis quantifies the evolution of spontaneous polarization, demonstrating that Sc3+ doping enhances the polarization magnitude by 39% (from 26.67 to 36.36 & micro;C cm- 2) through asymmetric cation displacement along the [001] crystallographic axis. This work provides a predictive framework for wide-bandgap semiconductor modulation.

Developing multifunctional superhydrophobic coatings with high thermal conductivity remains a significant challenge due to the trade-off between surface wettability and efficient heat transfer. Bioinspired by the hydrolysis-prone nature of the aluminum nitride (AlN) surface, hexadecyltrimethoxysilane (CTMS) is covalently grafted onto AlN nanoparticles to construct a robust, multifunctional superhydrophobic coating (H-AlN-C) with high thermal conductivity. At high surface-modified AlN nanoparticles (H-AlN) loadings (90.9 wt%), H-AlN-C achieves an ultrahigh thermal conductivity of 78.77 W/m & sdot;K, while its abrasion resistance is relatively limited. In contrast, H-AlN-C with moderate H-AlN content exhibits a balanced performance, maintaining durable superhydrophobicity after 500 abrasion cycles together with a thermal conductivity of 7.1 W/m & sdot;K. Both coatings display high water contact angles (up to 171.9 degrees), self-cleaning capability, and effective corrosion protection. Real-time thermocouple monitoring under cyclic heating-cooling conditions further verifies efficient and stable heat dissipation. MD simulations reveal that the reduced interfacial energy and lower diffusion coefficient of water clusters provide theoretical validation for superhydrophobic behavior of the H-AlN-C surface. These outstanding properties are enabled by the homogeneous dispersion and dense packing of H-AlN within the fluorocarbon resin matrix. Such interpenetrating architecture imparts both high surface roughness and low surface energy, enabling durable superhydrophobicity while supporting efficient heat dissipation.

Aluminum-doped beta-gallium oxide (beta-Ga2O3) is a promising ultrawide bandgap semiconductor for high-power applications due to its mechanical and thermal resilience. This study employs first-principles density functional theory (DFT) using the CASTEP code with the PBEsol functional to evaluate the structural, electronic, and mechanical properties of beta-Ga2O3 fully substituted with Al at Ga(II) octahedral sites under hydrostatic pressures ranging from -5 to +5 GPa. The results reveal enhanced stiffness, with the bulk modulus increasing from 122.5 to 163.3 GPa and Young's modulus from 201.6 to 233.6 GPa. Electronic band structures, corrected using a 2 eV scissor operator, revealed a widening of the bandgap with increasing compressive pressure, reaching 5.15 eV at +5 GPa. Mulliken population analysis and charge density maps reveal stronger Al-O bonding and increased covalency compared to the replaced Ga(II)-O bonds. While direct thermal conductivity calculations were not performed, consistently high Debye temperatures (626-667 K) and bond stiffening suggest potential improvements in phonon-mediated heat transport; however, these trends are indicative rather than conclusive. The results highlight Ga(II)-specific Al substitution as a practical approach to enhancing mechanical robustness and tunable electronic properties in beta-(AlxGa1-x)2O3 in high-voltage, thermomechanically robust power electronic devices.

A series of (GdxGa1-x)2O3: Tb3+phosphors (x = 0, 0.1, 0.3, 0.5, 0.7) were synthesized via a co-precipitation method to explore the dual role of Gd3+ ions in modulating the crystal phase, band structure, and luminescent performance. The results reveal that Gd3+ ions significantly enhances the green emission intensity of Tb3+, and this enhancement effect exhibits a clear dependence on the concentration of Gd3+ ions. As the Gd3+ content increases, the dominant phase transitions from alpha-Ga2O3 to Gd3Ga5O12 and Gd3GaO6, reflecting effective regulation of crystal structure. Photoluminescence and energy transfer analyses suggest that Gd3+ acts not only as an efficient sensitizer to facilitate energy transfer to Tb3+, but also as a structural modulator that widens the bandgap and suppresses non-radiative losses. These results demonstrate the dual function of Gd3+ as both an optical sensitizer and a structural stabilizer, offering a viable strategy for optimizing the design and performance of rare-earth-doped oxide phosphors.

In this paper, a narrowband tunable perfect absorber having five absorption peaks in the terahertz band is proposed. The absorber as a whole is a three-layer stacked structure. The proposed multi-band absorber is made of only one metamaterial layer and the top layer of metamaterial has a simple structural pattern, the feature that makes it easier and cheaper to manufacture. The five absorption peaks are at 6.993 THz, 8.527 THz, 10.809 THz, 12.427 THz and 14.659 THz, and the absorption rate of each peak is 99.416 %, 96.079 %, 99.512 %, 97.620 % and 96.226 %, respectively, which presents perfect absorption. The intrinsic mechanism of absorption peak generation has been explained by applying both impedance matching theories and electromagnetic field theories. Meanwhile, its absorption frequency and absorption rate can be dynamically adjusted through changing the chemical potential energy and relaxation time of graphene. Additionally, we discussed the practicability of the absorber, which is not-sensitive to the incident light angle (0 - 50 degrees). Also sensitivity (S), FOM, and high quality factor (Q-factor) parameters were introduced to fully evaluate the sensing performance of the design. The results show that the design is highly responsive to changes in refractive index, which indicates that the designed has considerable potential for application in refractive index sensors. The design also exhibits high FOM and Qfactor, suggesting a strong selectivity and a strong light-matter interaction of the absorber. Compared to other previous absorbers, the absorber we designed with more peaks and better dynamic tunability has a simple structure and excellent sensing performance based on high S, FOM and Q-factor. We believe that our study will supply new thinking ways for the design of multi-peak, narrow-band tunable perfect absorbers. Furthermore, it is our contention that the design has the latent application in optoelectronic sensors, photodetectors and other related areas.

This paper presents a laminated circular-ring-disk (CRDS) solar microstructure absorber constructed based on heat-resistant metals. This absorber achieves an ultra-broadband absorption with a bandwidth of 2171.68 nm in the near-ultraviolet to mid-infrared band, and has three absorption peaks with absorption rates exceeding 96 %, with peak wavelengths of 342.09 nm, 1215.40 nm, and 2032.86 nm respectively. With the finite-difference timedomain method (FDTD), we detected that the average absorption efficiency of this absorber under Atmospheric mass of 1.5(AM 1.5) conditions is as high as 96.05 %, and the average energy loss is only 3.95 %. Meanwhile, the research results of the electric field distribution of the CRDS microstructure show that CRDS effectively promotes the surface plasmon resonance effect between the laminated metal materials. Combined with the research on the top micro-absorption structure materials, we finally determined the structural parameters of the CRDS structure absorber and selected heat-resistant metals nickel (Ni), chromium (Cr), and titanium (Ti). On this basis,we focused on the thermal radiation performance of the absorber and found that it has good adaptability to hightemperature environments. Finally, by comparing the Transverse Electric Wave(TE) and Transverse Magnetic Wave(TM) polarization conditions with the sweep parameter diagrams of 0 degrees-60 degrees, we found that the absorber has excellent angle insensitivity. In view of the above discussions, the CRDS microstructure absorber has good thermal stability, angle insensitivity, and can achieve ultra-broadband perfect absorption from the nearultraviolet to the mid-infrared band, and has broad application prospects.

To solve the problems of single absorption function and the complex structure of terahertz absorbers, this study proposes a terahertz (THz) absorber based on vanadium dioxide (VO2) driven by electric dipole resonance, which can achieve wideband and narrowband absorption conversion. Simulation results indicate that in the narrowband absorption mode, two narrowband absorption peaks were observed at 14.6 THz and 16.8 THz respectively, and the maximum absorption exceeds 99% at the 14.6 THz frequency. In the broadband absorption mode, the absorber achieves a perfect absorption bandwidth (≥99%) of 4.6 THz, while the bandwidth with absorption exceeding 90% extends to 6.9 THz. The average absorption within the 6.9 THz range is approximately 98.29%. The investigation demonstrated that the perfect absorption effect originates from polarization resonance along with surface plasmon excitation on the VO2 surface under the impact of incident waves. Additionally, the symmetric design of our absorber ensures polarization insensitivity under normal incidence conditions and maintains excellent absorption performance over a wide range of incident angles. Following an analysis of the impact of the air refractive index on the absorber, our findings reveal that the absorber demonstrates both high refractive index sensitivity and remarkable tuning capabilities. This design has broad application prospects and can be utilized in thermal absorbers, terahertz sensors, and detectors.

We present and study a bidirectional metamaterial-perfect absorber based on TiO2-InAs regular hexagonal pattern thin films and gold grating. We employ the finite difference time domain approach for simulation. Multinarrowband perfect absorption and ultra-wideband perfect absorption can alternate as the light source's direction changes. Four narrow-band absorption peaks developed at 987 nm, 1188 nm, 1510 nm, and 2091 nm, respectively, when the incident light struck the bottom. The corresponding absorption efficiencies were 99.69 %, 99.41 %, 98.54 %, and 98.97 %. The broadband region displays the properties of perfect absorption when incident light strikes the top. It should be noted that it is not affected by the polarization or angle of the incidence. With an average absorption efficiency of 96.02 %, the structure attains over 90 % absorption in the 3023 nm range (424-3447 nm). Second, the weighted absorption efficiency of the full spectrum is as high as 96.84 %, and the AM 1.5 solar radiation spectrum and the solar absorption spectrum are strongly coincident. Furthermore, the computation results show that the thermal radiation efficiency is greater than 95 % between 300 K and 1500 K. The electric field distribution revealed that the Fabry-Perot cavity resonance within the film, the surface plasmon resonance (SPR) on the surface of the InAs and TiO2 regular hexagonal pattern films, the interstitial mode excitation between the films, and the excitation cavity coupling between cells of each unit were primarily responsible for the perfect absorption of broadband. The high-order resonant coupling in the FP cavity and the strong coupling between the local surface plasmon resonance and the FP cavity resonance in the metal grating's slit are the primary causes of the narrow band's perfect absorption. The suggested bidirectional metamaterial perfect absorber has significant promise for use in the disciplines of sensing, solar energy absorption, photoelectric detection, and photothermal conversion, as evidenced by its superb absorption and thermal radiation characteristics.

The use of BaTiO3 (BTO) ferroelectric thin films in flexible ferroelectric memory offers a promising pathway for next-generation nonvolatile memory applications, given BTO's excellent ferroelectric properties, stability, high dielectric constant, and strong fatigue resistance. However, the fabrication of BTO on flexible substrates presents a significant technical challenge. In this study, we achieved high-quality, single-crystalline (111)-oriented BTO films on mica substrates through the design of buffer layers. The BTO films exhibit strong polarization properties (remnant polarization, 2Pr ∼15.63 μC/cm2, and saturation polarization, 2Ps ∼36.61 μC/cm2), and the flexible BTO devices maintained exceptional stability under bending radii of 3.5 and 6 mm. After 107 bipolar switching cycles, polarization showed only minor changes, with a retention time exceeding 104 s. We further explored the application of flexible BTO ferroelectric memory in neuromorphic computing. The flexible BTO-based memory demonstrated adjustable synaptic behavior, effectively modulating EPSC (excitatory postsynaptic current) responses through pulse amplitude and width to simulate short-term memory. PPF (paired pulse facilitation) and LTP (long-term potentiation) behaviors verified its synaptic weight modulation capabilities, achieving 91.6% accuracy in neural network-based handwritten digit recognition after 103 training cycles. These findings underscore the potential of flexible BTO ferroelectric memory for memory devices and neuromorphic computing, offering promising applications for wearable AI systems.