Refractory metal monocrystalline nanostructures with spatial resolution up to 200 nm are fabricated by subtractive electron lithography and Al mask patterning of epitaxial refractory metal films. The size (width) effect on electrical properties of bridge-type metallic nanostructures with residual electron mean-free paths 200-500 nm is observed for the first time. It is also found that the change of the positive sign of electrical bending resistance at room temperature to the negative one at helium temperature proves the realization of the ballistic limit in electron transport in cross-type nanostructures. The effect of both ion etching and thermal annealing of nanostructures is also investigated.

In the present paper we are demonstrated achievement of high spatial resolution for X-ray spectrum of plasma produced by 20 mJ, high-repetition 120 fs laser using a Bragg-Fresnel linear zone plate structure on the mica crystal surface. We had also measured X-ray spectra near resonance line of He-alpha of Mg XI with simultaneously high spectral (up to lambda/Delta lambda = 10000) and spatial (Delta x = 10 mu m) resolution from plasma, heated by such laser, using spectrograph with spherical bent crystal. We demonstrated the important role of inner-shell excitation mechanism for low confinement parameters and propose new excitation channels from highly populated excited states (Li-like and Be-like satellite levels). The collision excitation cross sections for these processes do not decrease with principal quantum number. These channels can be also subject to electron beam excitation. It was shown also the big role of transient effects for Rydberg-Satellites due to a strong three-body recombination into high n-states in the cooling phase. Total spectra simulations are in rather close agreement with experimental results. New 3d(10)4 - 3d(9)41 6f spectral features of Cu-like barium, previously observed as unresolved transition arrays (UTA), are resolved at first time in present paper and enabling plasma diagnostics which were not possible before. The plasma electron density and temperature are found to be in tile ranges: N-e = 5 x 10(21) - 10(22) cm(-3) and kT(e) = 100 - 50 eV, respectively. The generation of intense, collimated monochromatic X-ray beams (lambda similar to 9.5 Angstrom) results are presented too.

A linear zone plate surface structure was created on the surface of mica crystal and used for obtaining spectrally resolved images of 120 fs laser-produced plasma. A linear Fresnel zone structure was optimized on a wavelength lambda = 9.16 Angstrom and has a focal length of f = 5 cm, minimum zone width Delta z(n) = 300 nm, total length l = 10 cm, total width of zone plate 2r(n) = 122.6 mu m.Images of laser-produced plasma in the spectral range 9.12-9.31 Angstrom were obtained For high Z (Lanthanum) element target the size of the X-ray radiation spot was not more than 20 mu m.

Low energy ion beam etching (IBE) at oblique angle at liquid nitrogen temperature has been applied for thinning of the cap layer of GaAs/InGaAs/GaAs (GaAs/AlGaAs/GaAs) heterostructures with near surface quantum wells (QWs) to study dielectric confinement effects [1]. It was shown that this etching provides the decreased radiation damage of such structures that results in smaller decreasing of photoluminescence (PL) quantum yield in comparison with other IBE techniques tested. This etching also saves a smooth surface of structures. Due to this fact the QW PL peaks are well defined and only slightly broadened even in a close approach to the QW layer position.

The possibility of decreasing the radiation damage of GaAs during ion beam etching was investigated with the help of a photoluminescence spectra study of GaAs/InGaAs/GaAs heterostructures with near surface quantum wells. It was shown that the change of normal ion incidence to oblique and the decrease of the sample temperature to that of liquid nitrogen cause minimum radiation damage to GaAs.

A laboratory facility for ion-beam etching is described. The conditions of beam transportation are analyzed. The possibility of producing microstructures with higher aspect ratio is demonstrated. It is shown that the etched sample can be cooled down to liquid-nitrogen temperatures and so the superconducting parameters of HTSC samples can be monitored during the etching process.

A model of resist ion beam etching (IBE) by noble gases ions is suggested. It is based on data of the influence of ion and electron irradiation on the properties of PMMA-based resists. PMMA resistance to IBE after such an irradiation is under investigation. In accordance with the proposed model in addition to physical sputtering, radiation induced processes make a considerable contribution to IBE of polymer resists.

The effect of Ar+ ion implantation with energy of 150 keV (doses 10114−1016 ions cm−2) into negative EN-14 electron resists on their resistance to subsequent ion-beam etching by argon ions has been investigated. Studies of structural reconstructions in resist films using the method of infrared spectroscopy show a significant change in the character of the infrared spectra after ion-beam implantation due to an increase in the atomic binding energy in the modified resist. This leads to a great reduction of the etch rate of modified resist layer (a factor of three reduction at doses of 1015 ions cm−2). A decrease in resist film thickness is also observed. The simultaneous effect of these two factors is that the resulting resistance of modified resist masks to ion-beam etching does not increase. However, application of resist masks with a reduced etch rate modified by ion implantation permits one to decrease the lateral shrinkage of the etched structures and to increase the precision of the ion-beam etch process.