In this article, we investigate the switching characteristic degradation and single-event burnout mechanism of Ta high-energy particles on the p-GaN gate HEMTs under high-voltage bias. The irradiated device saturation current decreases and the on-resistance increases. The gate leakage current increases by two and three orders of magnitude at off and on states. The dynamic switching characteristics of irradiated devices in the circuit are characterized for the first time through double-pulse test (DPT). It is found that the conduction ability of irradiated devices is seriously affected at conduction state. Under 350-V high-voltage bias stress, the turn-on/off time of irradiated device increases by 20/12ns and turn-on/off loss increases by 10.19/ $1.39~\mu $ J at ${V}_{\text {DS}} = {75}$ V. In addition, an obvious burnout point is viewed on the drain electrode. More significantly, high-energy incident particle Ta element is directly observed in the failure cavities for the first time. The potential burnout mechanism may be the heat accumulation in the GaN and substrate materials is difficult to release in a short time, resulting in the formation of cavities. The single-event effect (SEE) research of Ta particles on the p-GaN gate HEMTs is greatly significant on the development of GaN-based devices aerospace technology application in radiation environment.

This article proposes a monolithic pressureultraviolet (UV) integrated sensor based on AlGaN/GaN heterostructure thin films. Leveraging the 2-D electron gas (2DEGs) properties induced by spontaneous and piezoelectric polarization in the heterojunction, it achieves dual functions of pressure sensing and UV detection. For pressure sensing, the sensitivity, evaluated by the change rate of drain current versus net applied pressure, reaches 0.97%/kPa in the range of 0-80 kPa and 0.24%/kPa in the range of 80-180 kPa, outperforming most comparable devices. In UV detection, under 254-nm illumination with a 10-mV drain voltage as the excitation source, it exhibits a maximum responsivity of 29 417.37 A/W and a detectivity of 3.94 x 10(12) Jones, demonstrating excellent performance. The monolithic integration enables dual-function sensing, reduces the device footprint, and enhances space utilization, showing great potential for multiparameter monitoring in aerospace, automotive, and security fields.

In this work, the single-event burnout (SEB) mechanism of beta-Ga2O3 SBD is systematically investigated. The irradiation experiment was performed based on Kr ions with a high linear energy transfer of 37.9 MeV/(mg/cm2). During irradiation, the SBDs experienced burnout at applied bias voltages of 300 and 500 V, and the failure points were found at the anode edge. The TCAD simulation results show that the region outside the anode is less sensitive to irradiation. In contrast, ion incidence in the anode region leads to significant increases in electric field, current density, and temperature. Furthermore, there is a significant increase in these parameters at the anode edge compared to the anode center. Therefore, the anode edge is identified as the most sensitive region to radiation, which is consistent with the experimental results. Based on experimental and simulation results, an SEB mechanism is proposed. Heavy ion incidence will introduce a large number of electron-hole pairs, which are subsequently accelerated by the peak electric field at the anode edge. This acceleration initiates impact ionization, leading to the continuous generation of additional electron-hole pairs and resulting in a peak current at the anode edge. The current induced by the irradiation will cause significant Joule heating. When the local lattice temperature exceeds the melting temperature of beta-Ga2O3 material, it gradually leads to thermal damage and triggers SEB. This paper analyzed the radiation-sensitive regions and the mechanism of SEB in beta-Ga2O3 SBD, which provides a research basis for future heavy-ion irradiation hardening.

This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon compared to n type polysilicon. N type capacitors exhibit superior performance, with a breakdown voltage of 88 V, whereas p type capacitors demonstrate lower breakdown voltage of 51 V. The time‐dependent dielectric breakdown (TDDB) analysis indicates that n type capacitors exhibit lifetimes exceeding 10 years under high‐voltage stress at 125 °C. In contrast, p type capacitors demonstrate rapid failure when subjected to a voltage of 30 V. Conduction analysis reveals that Poole–Frenkel conduction dominates the stacked dielectric layers, but thinning of the interfacial oxide layer significantly increases Fowler–Nordheim tunneling, ultimately driving stacked dielectric breakdown. These findings highlight the critical role of dopant diffusion in interfacial oxide reliability and provide insights for improving the performance of high‐k stacked dielectrics in heavily doped polysilicon.

Abstract Silicon carbide (SiC)-based diodes are widely used due to their high temperature resistance. In this paper, breakdown voltage of 4H-SiC JBS diodes and capacitance-voltage of 4H-SiC MOS capacitors with identical interfacial structure were both measured at high temperature to study their interfacial properties. By analyzing the variation of interfacial properties, the correlation between thermal stress and failure mode of 4H-SiC JBS diodes was further established to reveal their degradation mechanism. During initial high temperature storage, interfacial negative effective charge density of 4H-SiC JBS diodes may increase, leading to the decrease of breakdown voltage. As storage time increases, interfacial charge density began reducing, resulting in the increase of breakdown voltage. Avalanche luminescence verifies that the variation of interfacial charge density under thermal stress led to the degradation of 4H-SiC JBS diodes and further affected their breakdown voltage. Finally, degradation mechanism of SiC-JBS, SiC-SBD and SiC-PIN diodes under irradiation stress was investigated. After irradiation, forward current of some SiC diodes increased at a small forward voltage. However, the reverse characteristics deteriorated obviously and even failed.

Metamaterials that offer optical control over multiple transparency windows have paved the way for advancements in terahertz (THz) modulation technology. In this paper, we have conducted a systematic investigation into the interaction between THz waves and “bright” split-ring resonators (SRRs). Through manipulation of the quantity and spatial arrangement of SRRs within metamaterial structures, we have successfully induced multiple transparency windows within the THz spectrum. Furthermore, we have explored the transmitted switching ratio of both the designed single transparency window and double resonance frequency bands as a function of the azimuthal angle of the THz wave. This work offers a general strategy for designing the number of electromagnetically induced transparency windows and holds the potential for realizing multichannel memories.

This study has used focused ion beam (FIB) and transmission electron microscopy (TEM) to investigate the corrosion behaviour of AA7108 alloy at nanoscale. The high-resolution characterization allowed the analysis of microstructure evolution during corrosion process from microscale to nanoscale. This provides previously unseen details of trenching corrosion. For example, the dealloying of Fe-containing particle occurs immediately with the initiation of trenching corrosion. Based on these details, the relevant corrosion mechanisms are proposed.

System-in-package (SiP) is an integrated device with low profile, high integration, and diversified functions, suitable for high-reliability application scenarios such as satellites. SiP devices operate in rapid high and low temperature changes, long-term high temperature environment, severe vibration and shock. The reliability of SiP device operating in space is the most important issue. Generally, Sip consists of three-dimensional stacked structure, which includes multiple interfaces such as silicon-silicon and silicon-ceramic. Complex interfaces mean thermal management problems. Electromagnetic coupling effects occur in vertical interconnections and high-density bonding wires. Fine pitch bumps and solder balls face with structural and interface degradation problems caused by electro-thermal coupling stress. This paper analyzes the difficulties of reliability evaluation of SiP for high reliability applications, and proposes a reliability evaluation method based on the process. Simulation and structure analysis are carried out to investigate reliability evaluation technology.

A broadband millimeter-wave frequency-scanning array based on substrate integrated waveguide (SIW) is proposed in this paper. The radiation element is stepped continuous transverse stub (CTS) composed of SIW. The fed structure is a grounded coplanar waveguide (GCPW) to SIW transition line using coupling slots. The beam steering direction varies with different frequencies within the working bandwidth. One 16-element array is simulated to validate the design. The simulation results show that the relative bandwidth of S11 less than −10dB is 37.8% from 32.6 GHz to 48.1 GHz. The gain at the broadside is 18.39 dBi with the first sidelobe level of −10.2dB and the 3 dB beam width of 5.6°. The scanning angle range is from −37° to 18° depending on frequency.

Shield gate trench(SGT)MOSFET was used as the research object to study the pheno-menon and physical mechanism of single particle microdose effect induced by heavy ions.Heavy ion irradiation test on 30 V SGT MOSFET at different bias voltages was carried out,and the changing trend for the transfer characteristic curves of the device after heavy ion radiation was analyzed to reveal the deg-radation rule of single particle microdose effect.It is found that heavy ion incident will cause the increase of subthreshold current and lead to negative drift of threshold voltage,and the negative drift of subthreshold voltage is more serious under negative gate voltage.Experimental results combined with TCAD simulation further reveal that the positive oxide trap charge at the Si/SiO2 interface of the gate ox-ide side wall is the main reason for the degradation of device threshold voltage and subthreshold voltage.The results can provide guidance for the evaluation and modeling of single particle microdose effect of SGT MOSFET.

This paper focus on failure analysis of a full wave phase sensitive demodulator induced by surface defect. A phase sensitive demodulator fails, inducing a big AC signal after the post-amplifier. According to the failure analysis, the failure reason of the phase sensitive demodulator is the surface defect in the interface of the Si and the SiO2. The surface defect decreases the current of the operational amplifier of the phase sensitive demodulator, making the signal suppression of the low frequency noise worse. The failure reappearance is performed by adding a parallel resistance between the power supply and the base of the triode of the operational amplifier. Moreover, three improvement measurements that include electrical test, cleaning and process are proposed, solving the failure phenomenon of the full wave phase sensitive demodulator.

Accurate measurement of junction temperature can avoid thermal failure of diode. During aging test, junction temperature should be indirectly calculated by testing its thermal resistance. In this paper, junction-to-case thermal resistance (Rthjc) of XX diode is tested by T3ster based on transient dual interface method. Its Rthjc is about 1.23K/W at 25°C and contains PN junction thermal resistance, metal shell thermal resistance and Sn-based solder thermal resistance, respectively. These three types of thermal resistance decrease in order. Effect of shell temperature on junction temperature and Rthjc is then discussed. As shell temperature increases, temperature variation of PN junction before and after heating and corresponding thermal resistance Rthjc both increase.

The single particle displacement damage effects and mechanisms in 8T Global Shutter CMOS image sensors (CISs) are studied. We provide radiation effects due to 129Xe ion irradiations of 8T Global Shutter CIS by the analyses of dark current spikes and dark current non-uniformity (DCUN). The experimental results show that low fluence irradiation-induced dark current distributions in 8T global shutter CIS exhibit a clear exponential hot pixel tail that appears difficult to match with cumulative radiation effect physical models. The degradation mechanism is a high electric field distribution exists at the overlap region between gate and pinned-photodiode (PPD). The emission rate of a defect can be dramatically enhanced via a high electric field. Irradiation-induced defects are the sources of the dark electron generation and the electric field acts as an amplifier.

This paper focus on failure analysis of a PROM at low temperature induced by process deviation. An abnormal pulse occurs from "0" to "1" of the reading data of the PROM at -10 °C. The failure mechanism of the PROM is analysed. By testing, the reference voltage of the comparator of the failure PROM is smaller than the normal PROM especially in the low temperature. The reference voltage gets smaller because of not only the NMOS but also the resistor, which result in the same reference voltage change trend with the decrease of the temperature. With the extremum of the process parameters, a simulation at different temperature is performed, which has the same waveform and the same failure temperature with the test. To avoid this failure, the maximum allowable deviation of the resistance of the resistor is 8% with the noise tolerance of 30 mV.

This paper summarizes the relationship between packaging structures, chip area and junction-to-case thermal resistance (Rthjc) of XX NMOS semiconductor in transient dual interface (TDI) method: (1)The Rthjc of this NMOS transistor is determined to be 0.48K/W directly from the separation of transient thermal resistance Zth curves. The influence of each packaging structure on Rthjc is then analyzed with cumulative and differential structure functions. The Rthjc mainly contains thermal resistance of PN junction, Sn-based solders, BeO ceramic and metal case. The thermal resistance of this NMOS is relatively small compared with that of other NMOS devices. (2)Chip area A can be calculated with heating power, chip thermal parameters and slope of transient initial junction temperature curves. The larger the slope of initial junction temperature curves, the smaller the chip area A. (3)With the same packaging structures, the smaller the chip area A, the larger the thermal resistance Rthjc.

对一种功率运算放大器的失效问题进行了研究并分析了失效机理.功率运算放大器在测试时发生失效,同时,-20 V供电电源电压在加电过程中存在波动.通过内部目检发现失效芯片内部驱动晶体管及相连的金属均存在过流烧毁形貌.对失效功率运算放大器和良好功率运算放大器进行红外热成像分析,失效器件的温升总体比台温高10℃.通过失效分析,供电电源发生快速突跳导致了功率运算放大器内的晶体管在导通和关断之间快速切换形成热量累积效应,从而导致器件烧毁,造成功率运算放大器过流失效.对电源输出波形异常原因进行分析,电源限流过小导致电源电压降低,从而造成加电时快速突跳.最后,搭建测试电路对功率运算放大器进行复现实验,进一步证明了器件的失效机理.

通过对某国产双极工艺宇航用稳压器进行不同LET值重离子辐照试验,实时监测器件输出电压的变化幅度和器件供电管脚电流,准确评估了器件抗单粒子效应性能.研究结果表明器件发生单粒子瞬态效应阈值小于5 MeV·cm2·mg-1,当辐照重离子LET值增加至37.37 MeV·cm2·mg-1时,诱发器件产生单粒子闩锁效应,器件供电管脚电流由6 mA陡增至24 mA.在分析重离子试验数据的基础上,借助脉冲激光获得了器件内部单粒子效应敏感区域位置和结构特征.分析认为由于芯片内部多个功能模块共用一个隔离岛,同一个隔离岛内的器件之间形成的寄生PNP管与隔离岛内NPN管形成了PNPN可控硅结构,当入射重离子LET值足够大时将诱发寄生PNPN结构导通,进入闩锁状态.采用模拟软件Spectre实现了电参数级的瞬态故障注入模拟,复现了该双极工艺结构下单粒子闩锁效应现象.

对一起由于片式钽电容器二氧化锰层固有质量缺陷引起的批次性质量问题进行深入分析,结果显示钽芯周围阴极二氧化锰层质量结构上存在规律性分布不均,会导致产品加电、断电过程中冲击电流向钽芯底面顶点位置集中而引发失效,该案例反映出目前片式钽电容器业内在阴极二氧化锰层控制上还存在盲区,结合已有的剖面数据和目前行业制造水平对二氧化锰层控制要求进行了初步给定,但由于尚缺乏系统二氧化锰层可靠性研究数据,故业内厂家仍需进一步优化工艺参数,累积可靠性数据,完备工艺控制和质量控制方法.

Fracture failure of electronic package often occurs during aerospace applications. This paper classified and analyzed the fracture of electronic package experienced by the author in recent years. The quality assurance and precaution were discussed. The fracture of electronic package include fatigue fracture caused by overload, fracture of lead caused by crack defect, cracking caused by electronic assembly, falling off of cover caused by mechanical stress.

为严格控制低成本卫星和商业卫星的研制成本,并缩短研制周期,有效手段之一是采用工业级器件、普军级器件,甚至是商用货架(Commercial Off-The-Shelf,COTS)器件.但是,研制成本与空间辐射环境适应性之间的矛盾是低等级器件和COTS器件在空间应用时需解决的主要问题.在分析低成本卫星和商业卫星空间辐射环境的基础上,结合NASA、ESA对低等级器件提出的评估筛选标准,思考了低成本卫星和商业卫星用电子器件抗辐射加固保证流程,为后续制定低成本卫星用元器件质量保证体系和大纲提供支撑.