We use Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy to characterize boron and nitrogen concentrations needed for the stabilization of neutral silicon vacancy centers (SiV0) in Si-implanted diamonds co-doped with boron and nitrogen.

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful Fermi level engineering of the diamond host material, making further technological development challenging. Here, we show that SiV0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting SiV0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of SiV0 centers as well as other emerging quantum defects in diamond.

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

The silicon vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV-, and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photoluminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photogenerated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. In addition, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV- and then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems.

Color centers in diamond are attractive candidates for implementing single-atom quantum memories in a quantum network. Recently, we reported a color center that exhibits favorable optical properties and long spin coherence times. The integration of this color center, SiV0, into nanophotonic circuits could enable efficient entanglement distribution over long distances.

Improving the precision of measurements is a significant scientific challenge. Previous works suggest that in a photon-coupling scenario the quantum fisher information shows a quantum-enhanced scaling of N 2 , which in theory allows a better-than-classical scaling in practical measurements. In this work, utilizing mixed states with a large uncertainty and a post-selection of an additional pure system, we present a scheme to extract this amount of quantum fisher information and experimentally attain a practical Heisenberg scaling. We performed a measurement of a single-photon’s Kerr non-linearity with a Heisenberg scaling, where an ultra-small Kerr phase of ≃6 × 10 −8 rad was observed with a precision of ≃3.6 × 10 −10 rad. From the use of mixed states, the upper bound of quantum fisher information is improved to 2 N 2 . Moreover, by using an imaginary weak-value the scheme is robust to noise originating from the self-phase modulation.

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0 SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

Standard weak measurement (SWM) has been proved to be a useful ingredient for measuring small longitudinal phase change (LPC) [X. Y. Xu, Y. Kedem, K. Sun, L. Vaidman, C. F. Li, and Guang-Can Guo, Phys. Rev. Lett. 111, 033604 (2013)]. In these SWM proposals, the working regime is selected where the relative phase between orthogonal components is zero, and the LPC can be detected by measuring the shift of the meter state, i.e., the time and frequency domain, which are conjugated observables. Here, we show that an extra bias phase can significantly improve the sensitivity of measuring LPC. This bias phase can be introduced by a precoupling process. Together with a special postselection, a destructive interference can be observed in both the time and frequency domain. Using a broadband source, this conjugated destructive interference occurs in a regime less than 1 as, while the related spectral shift reaches hundreds of THz, resulting in sensitivity outperforming SWM by two orders of magnitude.

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems.

Standard weak measurement (SWM) has been proved to be a useful ingredient for measuring small longitudinal phase shifts. [Phys. Rev. Lett. 111, 033604 (2013)]. In this letter, we show that with specfic pre-coupling and postselection, destructive interference can be observed for the two conjugated variables, i.e. time and frequency, of the meter state. Using a broad band source, this conjugated destructive interference (CDI) can be observed in a regime approximately 1 attosecond, while the related spectral shift reaches hundreds of THz. This extreme sensitivity can be used to detect tiny longitudinal phase perturbation. Combined with a frequency-domain analysis, conjugated destructive interference weak measurement (CDIWM) is proved to outperform SWM by two orders of magnitude.