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Anatolyi V. Govorkov

Institute of Rare Metals, Moscow, Russia

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Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Alexander Y. Polyakov,Nickolai B. Smirnov,Cheong Hyun Roh,Cheol-Koo Hahn,Han-Su Cho,Elena A. Kozhukhova,Anatolyi V. Govorkov,Roman Valerievich Ryzhuk,Nikolay Ivanovich Kargin,In-Hwan Lee

Nanotechnology, IEEE Transactions , no. 1 (2013): 151-159

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