Elena A. Kozhukhova

Institute of Rare Metals, B. Tolmatchevsky 5, Moscow, 109017, USSR

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Papers38 papers

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Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

A Y Polyakov, Nikolai B Smirnov, Anatoli Govorkov,E A Kozhukhova, T G Yugova,A S Usikov,H Helava,Yuri Makarov

Physica Status Solidi (c), (2015)

Bibtex

Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates

A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,S J Pearton,F Ren, Lu Lui, J Wayne Johnson, N I Kargin, R V Ryzhuk

Journal of Vacuum Science & Technology B, (2013)

Cited by18Bibtex

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Yashi Hwang,Lu Liu,F Ren,A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,N G Kolin,V M Boiko, S S Vereyovkin, V S Ermakov,Chienfong Lo

Journal of Vacuum Science & Technology B, (2013)

Cited by19Bibtex

Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition

A Y Polyakov,N B Smirnov,E A Kozhukhova, A Osinsky,S J Pearton

Journal of Vacuum Science & Technology B, (2013)

Cited by11Bibtex

Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

A Y Polyakov,Daewoo Jeon,Inhwan Lee,N B Smirnov,A V Govorkov,E A Kozhukhova,E B Yakimov

Journal of Applied Physics, (2013)

Cited by13Bibtex

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

A Y Polyakov,N B Smirnov,Minwoo Ha,Cheolkoo Hahn,E A Kozhukhova,A V Govorkov, R V Ryzhuk, N I Kargin,Hansu Cho,Inhwan Lee

Journal of Alloys and Compounds, (2013): 17-23

Cited by7Bibtex

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

Alexander Y. Polyakov,Nickolai B. Smirnov,Cheong Hyun Roh,Cheol-Koo Hahn,Han-Su Cho,Elena A. Kozhukhova,Anatolyi V. Govorkov,Roman Valerievich Ryzhuk,Nikolay Ivanovich Kargin,In-Hwan Lee

Nanotechnology, IEEE Transactions , no. 1 (2013): 151-159

Cited by3EIWOSBibtex

Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

A Y Polyakov,Daewoo Jeon,A V Govorkov,N B Smirnov, V N Sokolov,E A Kozhukhova,E B Yakimov,Inhwan Lee

Journal of Alloys and Compounds, (2013): 258-263

Cited by11Bibtex

Metastable centers in AlGaN/AlN/GaN heterostructures

A Y Polyakov, Nick B Smirnov,A V Govorkov,E A Kozhukhova,S J Pearton,F Ren,S Yu Karpov,K D Shcherbachev,N G Kolin,Wantae Lim

Journal of Vacuum Science & Technology B, (2012)

Cited by11Bibtex

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A Y Polyakov,Leewoon Jang, Dongseob Jo,Inhwan Lee,N B Smirnov,A V Govorkov,E A Kozhukhova,Kwang Hyeon Baik,Sungmin Hwang

Journal of Applied Physics, (2012)

Cited by4Bibtex

Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,S J Pearton,F Ren,Lu Liu,J W Johnson,Wantae Lim,N G Kolin, S S Veryovkin, V S Ermakov

Journal of Vacuum Science & Technology B, (2012)

Cited by20Bibtex

Electrical properties and radiation detector performance of free-standing bulk n-GaN

Inhwan Lee,A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova, V M Zaletin, I M Gazizov,N G Kolin,S J Pearton

Journal of Vacuum Science & Technology B, (2012)

Cited by24Bibtex

Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions

A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,S J Pearton,F Ren, Seongcho Yu, Karpov,K D Shcherbachev,Wantae Lim

(2012)

Cited by3Bibtex

Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

A Y Polyakov,Daewoo Jeon,N B Smirnov,A V Govorkov,E A Kozhukhova,E B Yakimov,Inhwan Lee

Journal of Applied Physics, (2012)

Cited by15Bibtex

Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

Inhwan Lee,A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,N G Kolin,V M Boiko,A V Korulin,S J Pearton

Journal of The Electrochemical Society, (2011)

Cited by16Bibtex

Neutron doping effects in epitaxially laterally overgrown n-GaN

Inhwan Lee,A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,E B Yakimov,N G Kolin,V M Boiko,A V Korulin,S J Pearton

Applied Physics Letters, (2011)

Cited by5Bibtex

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

A Y Polyakov,Leewoon Jang,N B Smirnov,A V Govorkov,E A Kozhukhova,T G Yugova, V Y Reznik,S J Pearton,Kwang Hyeon Baik,Sungmin Hwang,Sukkoo Jung,Inhwan Lee

Journal of Applied Physics, (2011)

Cited by9Bibtex

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

A Y Polyakov,In Hwan Lee,N B Smirnov,A V Govorkov,E A Kozhukhova,S J Pearton

Journal of Applied Physics, (2011)

Cited by38Bibtex

Deep electron and hole traps in neutron transmutation doped n-GaN

Inhwan Lee,A Y Polyakov,N B Smirnov,A V Govorkov,E A Kozhukhova,N G Kolin,V M Boiko,A V Korulin,S J Pearton

Journal of Vacuum Science & Technology B, (2011)

Cited by18Bibtex

10 MeV electrons irradiation effects in variously doped n-GaN

A Y Polyakov,Inhwan Lee,N B Smirnov,A V Govorkov,E A Kozhukhova,N G Kolin,A V Korulin,V M Boiko,S J Pearton

Journal of Applied Physics, (2011)

Cited by18Bibtex

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Elena A. KozhukhovaBinding

Papers38 papers

Elena A. Kozhukhova