National Research University of Electronic Technology (Russian: Национальный исследовательский университет "Московский институт электронной техники" / МИЭТ, lit. National Research University "Moscow Institute of Electronic Technology") is a Russian technical university in the field of microelectronics, information and computer technologies and one of 29 National Research Universities. University is founded in 1965 and located in Zelenograd, Moscow (the Soviet Union's center of electronic and microelectronic engineering). The university was often considered the center of the Soviet Silicon Valley..
This paper presents a Ti/HfO _x /TiN structure capable of switching between both resistive and capacitive states. Based on impedance spectroscopy data, an equivalent electrical circuit is proposed. This circuit explains resistive switching by filament growth in the hafnium oxide layer and suggests the presence of a TiON layer in the HfO _x /TiN interfacial region, which may explain the presence of ferroelectric capacitance switching. The capacitive switching window amounts to 185 pF, corresponding to a 75
A method for producing flexible strain-sensitive sensors based on multi-walled carbon nanotubes and reduced graphene oxide is described. The effect of laser radiation at 1064 nm at different mean power levels on the morphology and mechanical and electrical properties of the sensors was studied. A technical solution for using the sensors in joint rehabilitation is proposed.
Gas sensors which could efficiently operate at room temperature (RT) are highly requested by numerous end-users including various industries, Internet of Things, and personal gadgets. Therefore, 2D MXenes of metal carbides are suggested as a possible emerging option to be alternative to conventional metal oxides. Here, we consider i-MXene structures of W1.33C with in-plane ordered vacancies at the metal sites for additional functionalization of the material. The materials were properly characterized by XRD, XPS, and electron microscopy and further drop-casted over on-chip multielectrode array to be exposed upon gaseous analytes, representative of alcohols, ketones, arenes, and humidity at RT. It is shown that W1.33C structures are mostly sensitive to H2O vapors with the limit of detection going down below 1 ppm. The selectivity to distinguish various analytes is demonstrated via applying a multisensor approach while processing the vector response yielded by the entire array of on-chip W1.33C-based sensor elements.
The problem of maintaining an unmanned aerial vehicle in space is solved by using landmarks and calculating the approximate speed using a pixel stream. The implementation of primary image processing algorithms using one-dimensional digital filters adapted for a digital educational environment is considered. To improve performance, methods of replacing high-order bits of operands with low-order ones, index arithmetic, and methods using the graphic object identifiers, as well as replacing nonlinear operations with binary ones, are used. Algorithms for extracting lines in images and trajectories based on lines forming open or closed contours are developed. An artificial neural network for recognizing arbitrary classes of polygons using artificial intelligence tools is synthesized.
Van der Waals resonant tunneling diodes (vdW RTDs) with an N-shaped I–V characteristic enable the development of highly efficient components for data processing and transmission systems. The behavior of a vdW RTD as a dynamic system depends significantly on the total resistance R of the graphene layers and the metal contacts to them, as well as the minimum absolute negative differential resistance RN of the I–V characteristic of the vdW heterojunction. The system can function as an oscillator if RN ≫ R or as a trigger if RN ≪ R. These cases have been fully investigated. The case of RN < R has been studied insufficiently, especially for R ≈ RN, when a vdW RTD as a dynamic system can exhibit both trigger and oscillator properties. This paper analyzes the “mixed” mode for the I–V characteristic of a vdW heterojunction represented by a cubic trinomial. Methods of the qualitative theory of differential equations are used. It is shown that the experimental I–V characteristic of a vdW RTD at RN < R has a rectangular loop and, when self-oscillations occur, can additionally exhibit a sloping plateau. A method for reconstructing the I–V characteristic of a heterojunction from the characteristic parameters of the experimental I–V characteristic of a vdW RTD is proposed. The results obtained for the I–V characteristic of a vdW heterojunction in the form of a cubic trinomial can be applied to real RTDs by approximating the falling section of the I–V characteristic of a vdW heterojunction by a cubic trinomial. These results can serve as a supplement to the theory and design of circuits containing tunneling diodes (TD circuits).
