In this study, z[BaTiO3]/1-z[Zn0.8Co0.2Fe₂O₄] (Z = 0.10, 0.15, 0.20) composites have been synthesized using both sol-gel auto-combustion and solid-state reaction methods. Firstly, Ferrite (Zn0.8Co0.2Fe2O4) is synthesized using the sol-gel auto-combustion method, in which Zn, Co, and Fe metal nitrates react with citric acid to form a precursor powder. This powder is then calcined at high temperature to produce the ferrite material. After synthesizing the ferrite, it was prepared by mixing barium titanate (BaTiO3) with the ferrite using the solid-state reaction method, incorporating 5, 10, 15, and 20 wt
Hybrid piezo-triboelectric nanogenerators (HPTENG) are devices that encompass both triboelectric and piezoelectric effects that effectively convert ambient mechanical energy into electricity, which can be used as electric power or a sensor signal. Over the past decade, HPTENG development has progressed rapidly. In this work, a simple, compatible, and efficient approach has been taken to convert agricultural biowaste (Hedychium spicatum rhizome) into a value-added carbon filler via a green chemical-activation route for energy harvesting and sensing composites. The Hierarchically porous activated carbon (HPACx)-enriched ZnS/PDMS composite (x = 0.5, 1.0, 1.5, 2.0, and 2.5 wt
Breath analysis offers noninvasive and painless route for early detection of metabolic disorders, where acetone is recognized as critical breath biomarker for diabetes and abnormal fat metabolism. Therefore, an in-depth analysis of gas sensing parameters for acetone detection using CeO2-Cr2O3 composite has been explored. The composite was synthesized via solid state route at 400˚C and was pressed into pellet using hydraulic press. Subsequently, the detailed analysis of impedance spectroscopy confirmed semiconductor-like electrical behavior of the composite, which is highly affected by temperature and frequency. Furthermore, sensing characteristics of composite were investigated for various acetone concentrations at room temperature using AC impedance spectroscopy which exhibited dual behavior (p-type at low frequency region and n-type at high frequency region). The sensor exhibited increasing response with rising acetone concentration with the magnitude varying across low, mid and high frequency regions. The dynamic response was recorded to measure response and recovery times to be 20.7s and 12.9s, respectively. Repeatability tests confirmed that the sensor consistently produced stable responses across multiple cycles of acetone exposure, demonstrating its reliable performance. Moreover, the effect of acetone concentration with varying frequency on capacitance and conductivity were also studied.
In this study, zinc oxide (ZnO) ceramics were synthesized by a modified Pechini sol-gel method, replacing conventional zinc nitrate with zinc acetate to provide a distinct chemical environment and avoid toxic emissions during heat treatment. To the best of our knowledge, this work represents the first time this acetate-based Pechini route is investigated from a thermoelectric perspective. This approach offers a scalable, inexpensive, and non-toxic route with precise compositional control. To enhance thermoelectric performance, the powders were doped with 2
In this study, we investigated the effect of amine concentration in the copper precursor solution on the laser direct patterning (LDP) of copper using a modified 3D printer platform. Furthermore, the “trigger effect” in thick precursor films exceeding the 405 nm laser wavelength was characterized. We found that while an increase in monoethanolamine (MEA) concentration can lead to the formation of Cu(OH)2 complexes, the primary impact of excessive amine is a significant increase in precursor viscosity. This viscosity change results in thicker patterned films, ranging from 65 nm to 123 nm. Despite these variations in thickness, all copper patterns exhibited excellent electrical performance, with resistivities between 5.8 and 6.5 µΩ·cm—approximately 3.6 times that of bulk copper. Using UV-vis spectra and Fresnel equation-based reflectance simulations, we analyze the effect of moisture adsorption on copper pattern formation. Our results show that when the optical-thermal coupling is optimized at specific thicknesses, it facilitates effective energy absorption and triggers thermal decomposition in thick films. These findings show good agreement with the periodic appearing and disappearing of copper patterns observed as air exposure time varies.
This paper investigates the influence of electrical conductor material properties on the performance of a compact, high-efficiency pinwheel-structured wire antenna designed for orbital angular momentum (OAM) beam generation at 5 GHz. The antenna employs high-conductivity copper wire (σ = 5.8 × 10⁷ S/m) as the radiating material, chosen for its low resistivity (ρ = 1.72 × 10⁻⁸Ω•m) and favourable skin-depth characteristics (δ ≈ 0.93 μm at 5 GHz), which together minimise ohmic dissipation and surface-current losses. Three curved radiating arms, symmetrically arranged at 120° azimuthal intervals, generate an inherent phase progression of 360° about the aperture, producing OAM mode ℓ = +1 without external phase-shifting circuitry. The material-enabled low-loss current conduction, combined with the geometric phase control of the pinwheel structure, yields a measured S11 below − 30 dB at 5 GHz, a radiation efficiency of approximately 90
This report explores the synthesis of (0.05–9 mol
This work presents a high-performance extended-source silicon–germanium (SiGe) gate-all-around tunnel field-effect transistor (GAATFET) designed for next-generation ultra-low-power electronic applications. A cylindrical nanowire-based gate-all-around structure combined with high-k dual dielectric engineering is systematically investigated. The influence of source-side and drain-side dielectric permittivities on the electrostatic behavior, electric field distribution, potential profile, carrier concentration, recombination dynamics, and transfer characteristics is comprehensively analyzed. The results demonstrate that the optimized dual-k configuration ( K_S = 25, K_D=8 ) significantly enhances gate-to-channel electrostatic coupling, leading to improved band bending, increased tunneling probability, and suppressed ambipolar leakage current. The proposed device achieves a high ON-state current, ultra-low OFF-state leakage, a superior I_on/I_off ratio of 2.68× 10^12 , and a steep subthreshold swing below 40 mV/dec, outperforming conventional planar and FinFET-based TFET architectures. Furthermore, the extended-source geometry enables distributed tunneling and improved carrier injection efficiency while maintaining excellent electrostatic integrity. The obtained results confirm that the proposed SiGe extended-source GAATFET is a promising candidate for future nanoscale low-power switching applications and advanced energy-efficient integrated circuits.
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) have emerged as a promising next-generation technology for high-resolution displays and advanced electronics. While traditional amorphous silicon (a-Si) TFTs offer low-cost and large-area processing, their limited mobility ( 1 cm2/V·s) restricts fast switching applications due to challenges such as carrier trapping, poor interface quality, and environmental instability, which degrade electrical performance and long-term reliability. Conversely, polycrystalline silicon (poly-Si) TFTs provide high mobility (80–150 cm2/V·s) but at the expense of high production costs and complex processes. a-IGZO TFTs bridge this gap, delivering moderate mobility (5–20 cm2/V·s) with low-temperature processing (150–400℃) and good stability. These superior electronic properties, combined with optical transparency, make a-IGZO particularly suitable for large-scale organic light-emitting diode (OLED) backplanes and high-performance system-on-panel integration. Mobility, a critical performance factor, is influenced by defects, impurities, and process conditions. This review examines factors impacting a-IGZO mobility, compares structural and process-based enhancements for future flexible and transparent electronic applications.
The present investigation focuses on the development of sustainable polyvinyl alcohol (PVA) biocomposite films reinforced with Madhuca longifolia seed shell-derived biocarbon for multifunctional engineering applications. Biocarbon particles were synthesized through controlled pyrolysis at 500 °C and subsequently surface modified using 3-aminopropyltrimethoxysilane (3-APTMS) to improve filler–matrix compatibility. Composite films containing 1, 3, 5, and 7 vol
An ultra-wideband (UWB) monopole antenna fed by a compact coplanar waveguide (CPW) is proposed for Internet of Things (IoT) applications. The antenna, with an overall size of 32 mm × 30 mm on a Rogers substrate, operates efficiently across the 3–17 GHz band. A strawberry shaped radiating patch combined with a partial ground structure enables wide impedance bandwidth and stable radiation characteristics without the use of multilayer substrates. Extended impedance improvement is also achieved by employing a coplanar waveguide (CPW) feeding mechanism incorporating a castle-shaped profile along with a wider radiation element. The design attains a radiation efficiency above 80
This study proposes an Ag nanoelectrode array (Ag-NEA) based resistive random-access memory (RRAM) to overcome the inherent stochastic nature of conductive filament formation. Fabricated via ArF dry photolithography, the Ag-NEA RRAM demonstrates significantly improved switching uniformity (both cycle-to-cycle and device-to-device) and reduced operating voltages compared to conventional Ag film-based devices. These enhancements are attributed to the localized Ag cation supply and enhanced diffusivity through the NEA structure, enabling more controlled filament formation. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) depth profiling confirms that the Ag-NEA structure promotes effective Ag diffusion in nanoparticle form, validating the improved switching mechanism.
This work reports on the fabrication of polymer-ceramic multiferroic composites, PVDF-Bi₁₋ₓDyₓFeO₃ [with x = 0.05 (PVDF-BDFO5), 0.10 (PVDF-BDFO10), and 0.15 (PVDF-BDFO15)] (PVDF-BDFO), through a solution casting route. X-ray diffraction (XRD) analysis demonstrates the determination of all three polymorphic phases (α-, β- and γ-) of PVDF and unit cell parameters and the fundamental crystal structure of the crystalline phase. Structural analysis typically reveals that Dy-substitution at the Bi site stabilizes the rhombohedral perovskite structure of BiFeO₃. When incorporated into the PVDF matrix, the ceramic particles promote the nucleation of the β-phase of PVDF, which is responsible for strong electrical response. Electrical characterization of PVDF-BDFO ceramic composites improves dielectric constant, reduces leakage current, due to enhanced polarization and interfacial effects, though very high doping may eventually stabilize or slightly reduce it due to defects. The filler particles BDFO have been uniformly distributed throughout the polymer matrix, as observed using the scanning electron microscopy (SEM) technique. To investigate the impact of grain structure and grain boundaries on the resistive characteristics of the composite materials in terms of electric circuits, a complex impedance spectroscopy (CIS) technique was used. This suggests that these flexible fibers could be used for a variety of applications, including sensors, spintronic devices, and flexible information storage.
Bath-assisted three-dimensional printing has emerged as a promising strategy for fabricating stretchable electronic systems with high geometric freedom by enabling mechanically stabilized deposition and integrated encapsulation. However, previously reported bath materials have primarily relied on gel-like media, which limits mechanical robustness of the resulting devices. Here, we present a bath-assisted three-dimensional printing approach for patterning eutectic gallium-indium / polydimethylsiloxane (EGaIn/PDMS) electrodes by employing highly viscous and crosslinkable PDMS as a bath and a subsequent encapsulation medium. The engineered viscosity of the PDMS bath provides Stokesian drag–induced stabilization during printing, enabling the fabrication of versatile electrode geometries, while subsequent thermal curing converts the bath into a soft elastomer that serves as a mechanically reliable encapsulation layer. EGaIn/PDMS electrodes printed within the bath exhibit robust electromechanical stability, maintaining a resistance change of approximately 5
In this work, carbon nanotubes (CNTs) synthesized by low-pressure chemical vapor deposition (LPCVD) on silicon (Si), quartz, gallium arsenide (GaAs), and gallium nitride (GaN) substrates are examined for their growth, field emission (FE), and gas sensing performance. Field emission scanning electron microscopy (FESEM) and Raman spectroscopy were used to examine the CNTs surface morphology, alignment, and structural quality of as prepared samples. The results showed notable substrate-dependent differences in growth behavior. Because of their dense, vertically aligned structure, which facilitates effective electron transport, FE experiments showed that CNTs grown on Si substrates have a superior electron emission property which is very low turn on 0.9 V/µm threshold 1.175 V/µm and high current density 13.56 mA/cm2 as compared to other. On the other hand, CNTs emitting on GaN substrates had better turn-on properties but a somewhat lower emission current. Different substrate-dependent sensing behavior was found in gas sensing investigations toward ammonia (NH₃), with CNTs on GaN substrates exhibiting quicker response 6s and recovery 12s than those on other substrates growing CNTs. The findings demonstrate how important substrate engineering is for modifying the morphology and functional performance of CNTs. This comparative analysis offers fresh perspectives on how to optimize CNTs-substrate systems for specific uses in gas sensing and field emission devices.
We have analyzed the impact of presence or absence of multiple sized protective shields (aluminum material Faraday cap), where the aluminum material encapsulates the radio frequency (RF) Bluetooth low energy (BLE) device. We have shown the analysis for electromagnetic (EM) compatibility, power-up voltage (V), power-up current (I) and power dissipation ‘ P_dis = W/m3’ at multiprotocol functions of commercially available system on chip (SOC) BLE with model number (nRF52832). These multiprotocol pin functions of BLE are ((SOC power (PWR) Enable), SOC serial clock (SCL), SOC serial data (SDA), SOC general purpose input / output (GPIO) and SOC Reset). Our effort has shown that how the multiprotocol functions of SOC exhibited (VI-characteristic curve variations) in the power-up conditions, when tested with or without multiple sized aluminum caps. Our comparative study can furnish the handy information to cop up with electromagnetic compatibility (EMC) problems and can meetup with the EMC requirements, when utilizing aluminum cap with (nRF52832) SOC BLE for several prototype designs.
In this study, single-phase Mn-doped Sn3O4 ((x = 4, 7, and 10)Mn-Sn3O4) nanospheres synthesized using glycerate-assisted solvothermal reaction exhibited remarkable H2 sensing behavior. The XRD and XPS analyses confirmed the effect of Mn-doping on lattice distortion, defect formation, and electronic properties. Furthermore, Mn-doping led to morphological transformations from polished Sn3O4 nanospheres to uniform hierarchical wrinkled nanospheres, showing significantly increased surface area and enhanced porosity features. The optimal (x = 7)Mn-Sn3O4 sensor demonstrated an outstanding H2 response at a reduced operating temperature of 250 °C with 5.0 and 6.0 times of response value higher than that of the pristine Sn3O4 at 100 and 1000 ppm H2, respectively. The rapid response/recovery times along with an ultra-low detection limit down to 1 ppm indicated the wide-range and ultrahigh sensitivity of H2 monitoring system. Moreover, the sensor exhibited excellent selectivity, reliable performance under humid conditions, and operational stability over 50 days. These findings highlight the potential of Mn-doped Sn3O4 nanospheres for advanced, real-world hydrogen detection technologies.
In this research, a metal-glycerate framework strategy was utilized to fabricate homogeneous, phase-pure Mn-incorporated Co3O4 ((x = 0.5, 1.0, and 1.5)MnxCo3−xO4) yolk-shell hollow microspheres, exhibiting excellent hydrogen sensing capabilities. XPS results indicated that Mn integration modified the electronic characteristics, particularly enhancing the Co(III)/Co(II) proportion. XRD studies further validated that Mn incorporation induced structural strain and crystallographic defects. Additionally, Mn-incorporation prompted morphological evolution from solid Co3O4 spheres into porous yolk-shell architectures, resulting in a significant rise in surface area and hierarchical pore distribution. Among the samples, the optimal (x = 0.5)MnxCo3−xO4-based sensor showed a superior H2 response at operational temperature of 250 °C, with a response value 5.5 and 6.0 times higher than that of bare Co3O4 at 100 and 1000 ppm H2, respectively. The sensor’s fast response/recovery characteristics and ultra-wide detection capability from 1000 ppm down to 1 ppm reflect its exceptional sensitivity and broad detection range. Moreover, it displayed high selectivity, excellent functionality in humid environments, and long-term durability for up to 50 days. Altogether, these outcomes confirmed the promise of Mn-modified Co3O4 yolk-shell structures for next-generation hydrogen sensing platforms. Mn-incorporated Co3O4 yolk-shell microspheres, synthesized via a metal-glycerate route, exhibit enhanced surface area, lattice defects, and optimized Co(III)/Co(II) ratio, enabling ultra-sensitive, selective, and durable hydrogen sensing with rapid response/recovery and detection from 1000 ppm down to 1 ppm.
Colloidal InSb quantum dots (QDs) have emerged as promising environmentally benign candidates for short-wave infrared (SWIR, 1400–2500 nm) detection. They offer a heavy-metal-free alternative to lead- and mercury-based IR QDs while maintaining the advantages of solution processability for low-cost optoelectronics. This review provides a comprehensive summary of recent methodological advances and key developments in InSb QDs. It covers controlled synthesis routes from reactive precursors to co-reduction strategies and nucleation-growth mechanisms, as well as sophisticated surface engineering approaches such as surface passivation, ligand exchange, and core-shell structuring. We further discuss functional device architectures including photoconductors, photodiodes, and hybrid heterojunctions, highlighting critical progress in spectral extension and charge transport enhancement within QD films. Finally, we outline the fundamental challenges on the path to industrialization, focusing on precursor accessibility and reproducibility, surface oxidation and trap-state management, and device-level energy alignment. This review aims to deliver theoretical insights and actionable strategies for developing InSb QDs and advancing their high-performance, eco-friendly SWIR detection technologies.
To drive next-generation high-resolution and high-refresh-rate displays, transistors with high mobility exceeding 40 cm2/V·s are essential. Although amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) are key components of next-generation displays, their conventional mobility of approximately 10–20 cm2/V·s limits their application in these advanced displays and presents a fundamental trade-off between mobility and stability. Increasing the Indium content to enhance mobility leads to higher carrier concentration, causing the threshold voltage to shift negatively and significantly degrading stability under bias stress. Heterojunction channel structures have been investigated as a strategy to address these issues. The heterojunction structure decouples the functions of the high-mobility layer and the stability control layer. It is reported that a high electron density accumulation layer, known as a Two-Dimensional Electron Gas like layer (2DEG-like layer), can be formed at the interface, contributing to mobility enhancement. This improves the transistor mobility to over 40 cm2/V·s. Furthermore, precise conduction band offset engineering forms an energy barrier that suppresses electron trapping, thereby improving bias stability. This review comprehensively analyzes the 2DEG induction mechanism in IGZO-based heterojunction TFTs, the control of bandgap engineering, and the performance of key material systems such as ITO/IGZO and IZO/IGZO.
