Based on the LNOI material platform, the arrayed waveguide grating with 8 channels and 400 GHz channel spacing was developed by the development of the metal mask and ICP etching technology. The overall size of the device is 1.28 mm×1.38 mm. The test results show that the crosstalk of the arrayed waveguide grating is less than-15 dB and the channel non-uniformity is less than 0.5 dB. The device has accumulated experience in the development of LNOI based WDM technology and is expected to promote the miniaturization of multi-channel microwave photonics modules.
After 30 years of development,GaN has become a hot topic in the field of compound semiconductor research and industrialization. It is also one of the key technologies for satellite microwave communication in the future. However, the reliability has always been an important factor restricting the engineering of GaN HEMTs. The research and development process of the Nanjing Electronic Devices Institute to solve the reliability problem of GaN HEMT microwave devices have been reviewed and summarized. The typical failure modes and failure mechanisms of GaN HEMT microwave devices in different stages have been summarized. The aerospace application support system for GaN microwave devices is described to realize its good operation and unknown risk control.
基于0.7 μm的InP双异质结双极晶体管(DHBT)工艺设计了一种超高速宽带采样保持电路.输入缓冲器采用Cherry-Hooper结构有效提升了电路的增益和带宽.时钟缓冲器采用多级Cascode结构提升时钟信号的带宽.芯片面积1.40 mm×0.98 mm,总功耗小于1.1 W.测试结果表明:电路可以在40 GSa/s采样速率下正常工作.电路的-3 dB带宽在采样态为24 GHz,在采样保持态为19 GHz.在采样保持态,当输入4 GHz、-6 dBm信号时,电路的总谐波失真(THD)低于-41.5dBc,有效位数(ENOB)相当于6.6.时域测试波形在本文也有呈现.
The developments, circuit topologies and performances of GaAs and GaN microwave/millimeter wave T/R multifunctional chips, amplitude-phase multifunctional chips and GaAs limiterLNA chips were described briefly. The design methodologies of power amplifier, low noise amplifier, digital phase shifter and attenuator have been given respectively in transmitting/receiving branch and in amplitude-phase multifunctional MMIC, while the literatures are also listed for that of limiter-LNA.
There are several critical challenges that remain for flexible compound semiconductor electronics, such as great performance degradation after flexibilization and difficulties for mass production in wafer size. In this paper, we have studied the key technologies of non-destructive epitaxial layer peeling and wafer level flexible integration based on temporary bonding and debonding process. 4-inch flexible GaN HEMT devices and 3-inch InP HBT devices are achieved. Among which, the maximum drain saturation current decreased by 8.6% after flexibilization for GaN HEMT, and the cut-off frequency and maximum oscillation frequency are 358 GHz and 530 GHz for InP HBT. The results indicate that the flexible electronic devices fabricated by proposed process have great potential for high frequency and high power fields.
