Based on the LNOI material platform, the arrayed waveguide grating with 8 channels and 400 GHz channel spacing was developed by the development of the metal mask and ICP etching technology. The overall size of the device is 1.28 mm×1.38 mm. The test results show that the crosstalk of the arrayed waveguide grating is less than-15 dB and the channel non-uniformity is less than 0.5 dB. The device has accumulated experience in the development of LNOI based WDM technology and is expected to promote the miniaturization of multi-channel microwave photonics modules.
After 30 years of development,GaN has become a hot topic in the field of compound semiconductor research and industrialization. It is also one of the key technologies for satellite microwave communication in the future. However, the reliability has always been an important factor restricting the engineering of GaN HEMTs. The research and development process of the Nanjing Electronic Devices Institute to solve the reliability problem of GaN HEMT microwave devices have been reviewed and summarized. The typical failure modes and failure mechanisms of GaN HEMT microwave devices in different stages have been summarized. The aerospace application support system for GaN microwave devices is described to realize its good operation and unknown risk control.
基于0.7 μm的InP双异质结双极晶体管(DHBT)工艺设计了一种超高速宽带采样保持电路.输入缓冲器采用Cherry-Hooper结构有效提升了电路的增益和带宽.时钟缓冲器采用多级Cascode结构提升时钟信号的带宽.芯片面积1.40 mm×0.98 mm,总功耗小于1.1 W.测试结果表明:电路可以在40 GSa/s采样速率下正常工作.电路的-3 dB带宽在采样态为24 GHz,在采样保持态为19 GHz.在采样保持态,当输入4 GHz、-6 dBm信号时,电路的总谐波失真(THD)低于-41.5dBc,有效位数(ENOB)相当于6.6.时域测试波形在本文也有呈现.
The developments, circuit topologies and performances of GaAs and GaN microwave/millimeter wave T/R multifunctional chips, amplitude-phase multifunctional chips and GaAs limiterLNA chips were described briefly. The design methodologies of power amplifier, low noise amplifier, digital phase shifter and attenuator have been given respectively in transmitting/receiving branch and in amplitude-phase multifunctional MMIC, while the literatures are also listed for that of limiter-LNA.
There are several critical challenges that remain for flexible compound semiconductor electronics, such as great performance degradation after flexibilization and difficulties for mass production in wafer size. In this paper, we have studied the key technologies of non-destructive epitaxial layer peeling and wafer level flexible integration based on temporary bonding and debonding process. 4-inch flexible GaN HEMT devices and 3-inch InP HBT devices are achieved. Among which, the maximum drain saturation current decreased by 8.6% after flexibilization for GaN HEMT, and the cut-off frequency and maximum oscillation frequency are 358 GHz and 530 GHz for InP HBT. The results indicate that the flexible electronic devices fabricated by proposed process have great potential for high frequency and high power fields.
A tile integrated active array antenna operating in X-band was designed and implemented based on 3D-SIP technology in this paper.The active array antenna integrated active channels and planar antennas based on multi-channel SIP module technology and high-density vertical interconnection technology.The tile integrated active array antenna designed in this paper consists of 6×8 T/R channels,which can achieve scanning capability better than ±30° in 8.6-10 GHz frequency band,the maximum equivalent isotropically radiated power（EIRP） value is 65.2 dBm,the array size is 128 mm×96 mm×13 mm and the weight is 303 g.The simulation and measurement results show that the tile integrated active array antenna based on 3D-SIP technology proposed in this paper has the advantages of low profile,miniaturization,low cost,high performance and high reliability,and can be widely used in rader,communication and imaging systems.
The heterogeneous integration in transistor level is a prior development direction of semiconductor microwave devices technology in post-Moore era. Two kinds of epilayer transfer heterogeneous integration processes in transistor level of dielectric bonding and metal bonding which are developed for planar devices and vertical devices respectively are presented in this paper. The power devices of GaN HEMT on diamond substrate based on dielectric bonding process and the GaAs PIN limiters on SiC substrate based on metal bonding process have been demonstrated. Compared with conventional GaN HEMT on SiC substrate, measurement results show that the thermal resistance of GaN HEMT on diamond decreases more than 50% when operating with high dissipating heat. The output power and power-added efficiency under continuous operation condition increase 0.77 dB and 5.6 percent point. Compared with normal limiter on GaAs substrate, the 18-40 GHz GaAs PIN limiter on SiC substrate shows 0.2 dB insertion loss and greater than 3 dB power-resistant ability improvement and about the same amplitude level.
射频光纤传输组件利用光子学的方式实现射频信号的传输与处理,超薄射频光纤传输组件是构筑超薄相控阵的核心单元.南京电子器件研究所利用射频、光电混合微组装集成工艺研制了表贴型超薄四通道集成射频光接收组件,如图1所示,解决了微型多通道光纤阵列高精度光耦合、多通道光信号串扰抑制、宽带光电信号高频互连传输及高可靠光纤接口气密封装等多项关键技术难题,实现了频率范围覆盖DC～12 GHz、厚度＜3 mm、尺寸＜12 mm×12 mm的四通道集成射频光接收组件.图2为四个通道不同波段射频光信号接收的测试结果,其中,通道1的工作频率为4～12 GHz,通道2和通道3的工作频率为DC～12 GHz,通道4的工作频率为0.4～1.8 GHz.
Based on the multi-impedance matching technology of active load modulation, utilizing 0.25 μm GaN HEMT technology, a X-band dual-mode power amplifier（PA） was developed. High efficiency could be achieved under two output power modes: peak and power back off 10 dB. The symmetrical two-channel three-stage topology design was adopted and dual-mode operation was realized by multi-impedance matching and voltage switching. Main PA was designed taking into account output power and efficiency in both high power（HP） and low power（LP） mode, while the design of auxiliary PA considered both high resistance state of output matching network in LP mode and the broadband matching state in HP mode. Test results show that under the pulse test at 25℃ with pulse width of 100 μs and duty ratio of 10%, the peak output power（Pout） of HP mode reaches up to 47.5 dBm and the power additional efficiency（PAE） reaches 43% in 8.5-13.0 GHz. In 10-12 GHz, Pout of LP mode can reach 37 dBm, and PAE is up to 27%.
In the post-Moore era, the development of semiconductor technology relies mainly on two paths: More Moore and more than Moore. Using new processing and new material, more Moore is pushing the line width to 3 nm and even the order of angstroms. On the other hand, more than Moore uses heterogeneous three dimensional micro-nano integration to meet the needs of the next generation of high speed, low power, and high performance electronics. Heterogeneous integration takes advantage of properties of different materials to optimize system performance. RF integration technology promotes the breakthrough of high frequency microelectronics from planer 2D to 3D, and becomes an important way for the development of high frequency microelectronics in the post-Moore era. 3D RF heterogeneous integration technology has all the benefits of Si-based fabrications, such as processing accuracy, good batch consistency, and wafer level stacking. Heterogeneous integration technology leads to the miniaturization of passive devices, chipization of RF module and miniaturization of RF systems. This paper introduces the development trend of RF three-dimensional micro-nano technology, and gives the development and application cases of RF MEMS devices, RF MEMS modules and three-dimensional RF micro-systems at home and abroad by using RF three-dimensional micro-nano integration technology.
A surface-mounted ultra-wideband bridge was designed and fabricated to meet the power combining requirements of high-power modules. The size of the proposed bridge is reduced significantly by adopting the serpentine strip line and optimizing the high thermal conductivity material（SJ9350H） and thickness of the medium plate. The structure of multi-section directional coupler was adopted to realize the ultra-wideband characteristics according to the principle that the reflected waves of each section of the coupler cancels each other. The port of the bridge is half-open, which can quickly distribute the internal heat of the bridge through the medium conduction and air conversion, to improve the power resistance of the bridge. In addition, the electric and heat co-simulation is carried out with COMSOL in the design process, and the power resistance of the bridge in high-power state is evaluated by analyzing the mapping between electric and temperature fields. Based on the above design, a bridge is fabricated and experimentally measured, the frequency band is 0.2-1.0 GHz, the VSWR is lower than 1.3, the insertion loss is lower than 0.6 dB, and the average burn-out power is over 350 W.
High voltage,high power density and high efficiency are the main directions of sustainable development of the power electronic device technology.Based on the excellent properties,4H-Si C material shows a broad prospect in the application of power electronic devices.The mainstream Si C epitaxial reactors and the progress of domestic Si C substrates were introduced in this paper,which also focused on the development of high growth rate epitaxy technology on the 150 mm（6-inch） Si C substrates made by the State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices.The morphological defects and base plane dislocations density of the 150 mm 4H-Si C wafer can be reduced to≤0.5 cm -2 and≤0.1 cm -2 ,with the uniformity of doping concentration and thickness reduced to≤5%and 1%.Based on the epitaxial materials,the commercialization of 650-1 200 V Si C MOSFET and the product approval of 6.5-15 kV high voltage Si C MOSFET are realized.
The dynamic relaxation process of the surface potential, electric field strength and electric field gradient at different times after the transition from stress bias to test bias is plotted using hyperbolic function fitting. The metastable energy bands induced by this bias transition are calculated.The relaxation process of the metastable energy bands depicts the charging process of the heterojunction after channel pinch off. The metastable energy bands calculation proves that the strong field peaks, electric field gradient peaks, energy band valleys and energy band peaks in the outer channel are all caused by the charge of the localized electron gases, and the slow transport of the localized electron gases slows down the heterojunction charging and elongates the metastable energy band transition relaxation process during the bias transition. When the negative stress gate voltage is applied, the electrons are injected into the space charge region to charge the traps. The trapped charge is superimposed on the localized electron gas charge, enhancing the band distortion and current collapse. From this, a new virtual gate model involving heterojunction band transitions is proposed. Under the new virtual gate model, the electron gas state change induced by the energy band variation of the heterojunction is much stronger than the electron depletion effect in the existing virtual gate, which explains the experimental result of the trap density in the outer channel measured from the drain-controlled DLTS is 1-2orders of magnitude larger than the inner channel trap density measured by gate-controlled DLTS.Current collapse, 3 mm HFET development and its reliability challenges in GaN HFET research are discussed using the new virtual gate model involving band switching. A new topic of researching twodimensional heterostructures using heterojunction fins to develop field effect transistors is proposed.
固定指向型微波辐射计通常采用多支路法进行定标,传输路径上的各微波组件存在一定的插入损耗,且组件间还存在阻抗失配,因此需要首先建立信号源经馈源口面至接收机输入端口处的辐射传输模型,然后结合两点定标法确定固定指向型微波辐射计的定标模型.首先对同类型微波辐射计的辐射传输模型进行叙述,然后采用正交试验设计法定量地分析了辐射传输模型中各组件对接收机等效输入噪声温度误差影响的大小以及主次关系,为同类型微波辐射计的辐射传输模型建立和定标模型初始参数的选取提供参考.
针对某一型号功放模块在温度循环过程中出现无功率输出现象,对失效功放模块开展了分析研究.利用扫描电镜和能量色散X射线光谱仪对功放模块内部的MMIC芯片进行形貌观察和元素成分分析.结果表明功放模块内部的MMIC芯片栅极与漏极间发生了金的电化学迁移,导致馈电端短路,从而引起模块无功率输出.经故障复现试验,证实金的电化学迁移与器件内部的助焊剂残留相关,加电使用过程中,金电极在电场、水汽及助焊剂中电解质的共同作用下发生金迁移.
提出了一种毫米波Doherty放大器一体化匹配网络的设计方法.该匹配网络将功率合成、阻抗变换和相位调节功能一体化,结合兰格耦合器,去除了传统Doherty功放结构中输出和输入四分之一波长线.采用0.15 μm GaN工艺研制了一款Doherty放大器MMIC.连续波测试条件下,此放大器在38～42 GHz频段内,饱和功率达到40dBm,饱和PAE大于24％,6dB输出功率回退PAE达到16％.在中心频率40GHz、20MHz双音间隔测试条件下,输出功率回退3 dB时,放大器的三阶交调失真IMD3小于-21 dBc.
首先概述了 2022年国家自然科学基金的重要改革举措;其次分析了本年度信息四处"半导体科学与信息器件"领域项目的申请、受理和资助情况,以及涉及面最广的面上和青年项目申请与资助的依托单位分布情况,并就申请项目的四类科学问题属性展开统计分析;然后围绕"负责任、讲信誉、计贡献"(RCC)评审机制改革工作在信息四处的试点情况展开了分析与探讨;最后,面向项目申请人和评审专家分别给出建议,并对"半导体科学与信息器件"领域优先发展方向进行了展望.
为了探索高效无毒的钙钛矿太阳能电池,以太阳能电池模拟软件SCAPS-1D为工具,研究基于梯度掺杂CsSnI3吸收层的无空穴传输层太阳能电池.首先研究均匀CsSnI3吸收层的电池,在其基础上提出梯度掺杂吸收层的电池,并对吸收层掺杂梯度、平均掺杂浓度和缺陷水平进行分析和优化,最后研究了吸收层子层数的影响.研究发现梯度掺杂能够产生附加电场,可以显著提升电池转换效率.对于吸收层厚度为1 000 nm的电池,通过梯度掺杂优化可以将最大转换效率从22.28％提升到25.04％.即使梯度掺杂的子层数只有两层,也能取得理想的提升效果.
基于SiGe工艺设计了一款超宽带、高线性度的正交调制器电路,主要包含本振移相模块、混频器模块和输出模块.其中本振正交信号产生电路采用RC多相滤波器结构,在超宽带下生成正交信号,并采用限幅放大器对信号的幅度和相位进行校准;混频器采用Gilbert双平衡混频器电路结构,并使用电阻负反馈结构和电感峰化技术,可满足超宽带、高线性度、高镜像抑制的设计要求;输出模块采用有源巴伦实现差分转单端功能.芯片供电电压为5 V,工作频率范围为50 MHz～6 GHz,输出1dB压缩点最高可达到14.7dBm@2 GHz,边带抑制为-60 dBc,载波泄露为-44.8dBm,噪底可低至-166dBm/Hz.可广泛应用于各类接收机和通信系统中.
GaN HEMT器件在高温栅偏压(HTGB)应力下会出现势垒退化现象,并进一步引发器件在射频工作下的不稳定和失效问题.使用微光显微镜(EMMI)作为主要工具,对器件的HTGB退化问题进行了研究.讨论了不同电偏置条件下器件EMMI发光的分布和形成机理,并对比了器件在HTGB试验前后EMMI发光图像的变化.HTGB后器件在反偏电场下出现明显新增EMMI亮点,对亮点的微区分析定位到栅下有外延位错对应的局部烧毁点.研究表明,延伸至栅下的外延位错会构成漏电通道,对HTGB下的退化和失效存在贡献.
