Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT technology. The transmitter has more than 18dB conversion gain over 264-285GHz, consumes 1. 6W, and has 14. ldBm output power at 272 GHz. Its -3dB bandwidth is 18 GHz, while its -6dB bandwidth is 36 GHz. An internal 8:1 active frequency multiplier generates the local oscillator. To the authors’ knowledge, the IC demonstrates record saturated output power for an integrated transmitter operating near 272 GHz.
In this paper, we designed a CMOS active phase shifter that operates in the Ka-band. In the active phase shifter, the differential signals with high phase accuracy were generated using active balun to alleviate complexity, thereby reducing the insertion loss of I/Q generator. In addition, we proposed a layout technique that can secure symmetry between the output signals of poly phase filter (PPF). To verify the feasibility of the proposed design technique, we designed an Ka-band active phase shifter using 65 nm RFCMOS process. The core size of the designed phase shifter was 0.506× 0.257m$\mathrm{m}^{2}$. At the target frequency of 28 GHz, the measured RMS phase and gain errors were lower than 0.35° and 0.07 dB, respectively.
Next generation communication standardization is calling for more flexibility with an access to higher carrier frequencies and wider instantaneous bandwidth. We propose to tackle these challenges by introducing wideband data converter solutions capable to directly access the microwave spectrum up to Q-band $(40 \mathrm{GHz})$. After a proof of concept presented at EuMW 2021, a product has been developed based on a $2^{\text {nd }}$ generation $T / H$ die, and a specially developed ADC die in $28 \mathrm{~nm}$ process, thus allowing for a dramatic power reduction, cutting down the overall power to $2.5 \mathrm{~W}$. These two dice have been assembled in a dedicated FCBGA package to offer optimal performances with a tight power budget in a reduced footprint. With a $B_{-3 d B}$ of 32GHz at $\mathrm{T} \mathbf{j}=100^{\circ} \mathrm{C}$, the measurement frequency has been extended up to the beginning of the Q-band $(40 \mathrm{GHz})$. Performance of SFDR, $\mathrm{SNR}, \mathrm{THD}$ and ENOB are shown in X-, Ku-, and Ka-band, at a sample rate of 12.8GSps.
This paper describes the design and implementation of a 113.5-127 GHz D-band LNA using GlobalFoundries’ 22 nm FD-SOI technology. The proposed design achieves 6.6 dB of minimal noise-figure in-band for a peak gain of 17.5 dB at its nominal bias for a 27.5 mW power-consumption using a low supply voltage of 0.75 V, and can achieve an NF down to 6.1 dB and gain up to 19.1 dB in a high-performance state. On top of that, the LNA can be configured as a variable-gain device by making use of the unique back-gate bias node of the 22FDXO technology. In that case, a 9. 7dB gain-control is achieved over a 2 V bias range at the back-gates. The design achieves a low area of 0.039 mm 2 thanks to its layout based on compact transformers.
