(Y1–xPrx)2O2Se solid solutions with х = 0.004, 0.008, 0.010, 0.012, and 0.020 have been prepared from oxides by ampule synthesis. We have measured their excitation spectra at λem = 514 nm and their photoluminescence and quantum yield spectra at λex = 463 nm (T = 300 K). Comparing their emission intensities at wavelengths of 514 (3P0 → 3H4 transition) and 670 nm (3P0 → 3F2 transition), we have determined the optimal dopant concentration (x = 0.01), at which the quantum yield has a maximum, reaching 3%.

Представлены результаты исследования структурных, вольт-амперных и во-льт¬-фарадных характеристик тонких золь-гель пленок ZnO, TiO2 и SiO2 на поверхности черного кремния (b-Si). Показано, что пленки ZnO и TiO2 имеют стабильные стру¬кт¬у¬р¬ные свойства и не ухудшают отражение b-Si в широком диапазоне солнечного изл¬у¬че¬ния. Заметной фоточувствительностью обладают только образцы с пленкой TiO2. Проанализированы функциональные возможности применения структур b-Si/¬ок¬си¬д¬на¬я пленка в полупроводниковых приборах различного назначения. В качестве па¬с¬си¬вирующих и защитных покрытий в солнечных элементах на основе b-Si пре¬д¬по¬ч¬ти¬тел¬ьно использовать золь-гель пленки ZnO и TiO2.

Hybrid solar cells based on InGaP/Ga(In)As/Ge and Si elements integrated in a crystalline silicon heat-removing base with a system for optical-emission concentration based on linear Fresnel lenses and carbon-fiber body shell have been developed and their characteristics examined. These hybrid elements with light concentrators provide a specific electric power of 390 W/m2 (AM0, 1367 W/m2) at a specific mass of the photogenerating part reduced to 1.0 kg/m2. The improved photoelectric characteristics and the radiation hardness of the cells enable application of the hybrid elements with light concentrators in space solar cells and in stand-alone terrestrial power plants with solar light concentration.

Hybrid solar cells based on InGaP/Ga(In)As/Ge multijunction structures integrated into crystalline Si heat-removal base and provided with sunlight concentrator system based on linear Fresnel lenses and carboplastic mount structure have been developed and investigated. The hybrid solar cells with sunlight concentrators in the photovoltaic module provide a specific electric power of 390 W/m 2 (AM0, 1367 W/m 2 ) at a photoconverter unit specific weight reduced to 1.0 kg/m 2 . Improved photovoltaic characteristics and high radiation resistance allow using the proposed hybrid solar modules with sunlight concentrators in space solar batteries and autonomous power supply facilities.

In present work the questions related to decreasing the control voltage of amplitude Fabry–Perot modulators with conserving their high efficiency have been considered. Schematic models of high-efficient amplitude Fabry–Perot electrooptical modulators have been proposed.

This paper shows that implementing a system for the reception and detection of submillimeter radiation on the basis of open planar microresonance structures in the form of apodized dielectric gratings with a fill factor that varies according to a linear law, connected through an impedance transformer with a low-barrier zero-bias Schottky detector diode, makes it possible to achievelosses to reflection of -26.5 dB,a standing-wave factor of 1.1,conversion efficiency 98.6%, with an NEP of 8.05 x 10(-12) WHz(-1/2). (C) 2012 Optical Society of America.

Construction and breakdown voltage of avalanche photodiode with Read diode structure was simulated by computer. It was shown that the guard area construction composed of the metal electrode and guard rings influences on the electrical quantities of  n + -p  junction breakdown region.

The statistical distributions of pulses from silicon avalanche photodetectors with p + n-v-n + and n + p-π-p + structures have been investigated in the photon-counting mode. Comparative analysis of the statistical distributions for these avalanche photodetectors is presented.

Results of investigations of vanadium dioxide thin films obtained by the electron-beam evaporation method are considered. Structural and surface morphology of VOx thin films on silicon substrates are presented. Analysis of electrical characteristics of the studied samples is given. A hysteresis of temperature dependences of capacitance and resistance, as well as the phase transition at 58 degrees C are obtained.

Pulse amplitude distributions of avalanche photodetectors with a metal-resistive layer-semiconductor structure and a 7-mm2 photosensitive area are investigated in the photon-counting mode. It is shown that p-n junction heterogeneities in a space charge region affect the shape of amplitude distributions of photocurrent pulses, as the overvoltage increases and light spot changes its position on the photosensitive area. The comparative analysis of the amplitude characteristics of the above avalanche photodetectors and commercial ΦД-115д avalanche photodiodes is conducted.

The possibility of operating author-designed avalanche photodetectors with a large photosensitive surface (7-mm 2 area) in the photon counting mode at room temperatures is shown. The characteristics of these photodetectors and ΦД-115Л avalanche photodiodes are compared in the photon counting mode.

A method is proposed for automating measurements and calculations of the correlation coefficient for experimental and theoretical (CCET) current-voltage characteristics (CVC) of solar elements. The relative root-mean-square error of the CCET CVC measurements is less than 0.40%.

Using the method of simultaneous sulfurization and selenization of intermetallic Cu-In-Ga layers, single-phase thin films of the Cu(In,Ga)(S,Se)2 (CIGSS) alloys are obtained. On these films, rectifying photosensitive surface-barrier structures In/p-CIGSS are obtained by vacuum thermal evaporation of pure In. The photosensitivity spectra of the originally obtained structures are studied. The effect of the composition of the alloy films and illumination conditions on the photoelectric parameters of new structures In/p-CIGSS is studied. It is concluded that the obtained CIGSS films are promising for fabrication of high-efficiency thin-film photoconverters.

We describe a method for automated measurement of the integrated sensitivity of solar cells (SCs) and multielement photoconverters (MPCs) using an experimental apparatus including a Pentium III personal computer (PC), an HP-34401A digital multimeter (DM), a stabilized radiation source (SRS), a controllable focusing system, an X-Y positioning device based on CD-RW optical disk storage devices.

We describe equipment and a procedure for measuring inhomogeneities in active regions of solar cells, photoelectric transducers, and multielement photodetectors, based on a computer-controlled dual-beam laser scanner including a Pentium III personal computer, an HP-34401A digital multimeter with RS-232 serial interface;, a platform movable along the Y coordinate with the sample multielement photodetector to be tested and a microprobe device for picking up the photocurrents, an optical head with laser photodiodes in the visible (λ1 = 0.68 µm) and IR (λ2 = 0.82 µm) ranges scanning along the X coordinate, and a control unit for focusing the laser beams λ1, λ2, stabilizing the laser radiation power, and controlling the step motors for the X,Y coordinates.

An automated system for plotting the current-voltage characteristics of solar cells when they are illuminated with standard solar radiation, based on a personal computer, is presented.

This article describes the technique used to estimate the temporal positions of spectral lines of a quadrupole mass spectrometer and to automatically determine mass numbers without resorting to reference substances, as well as the algorithms of digital registration of mass spectra and the technical means of an experimental automated system based on a serial MX-7304A mass spectrometer and a personal computer. The results of experimental investigations of the dynamics of the drift of peaks and the results of tests of the technique under real conditions are given. The error in determining the atomic mass unit (u) by the technique developed was not higher than 0.01%.

The dependence of the microstructure and spectral parameters of thin cadmium sulfide layers on the thickness of these layers and conditions of their chemical deposition from salt solutions has been investigated by methods of absorption spectroscopy and atomic-force microscopy. The chemical composition of the mixture of salt solutions and conditions of deposition of homogeneous buffer layers of definite thickness, the optimum structure, and reproducible composition have been determined on the basis of experimental data. Our investigations have made it possible to fabricate film-type solar cells based on Cu(In,Ga)Se2 with a conversion efficiency of 10–11%.