Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n-р-n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n-р-n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I-V characteristics of the various lots of the bipolar n-р-n-transistors, fabricated under the epitaxial-planar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n-р-n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector - base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n-p-n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.

The results of experimental researches of influence of gamma radiation Со 60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.

There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements of the capacityvoltage characteristics of the MOS structures make it possible to perform the quality diagnostics of the gate dielectric. The kind and shape of the measured characteristics are determined by the value of the additional positive charge in the dielectrics and density of the fast surface states on the Si-SiO2 interface, which correlate with the surface concentration of the technological impurities, adsorbed on the surface of the wafers in process of the devices fabrication, which makes it possible to make a conclusion about the quality of the applied materials and compliance of the manufacturing process.

Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

The review summarizes development of microelectronics in the developed countries over the period of 7–10 years until 2008, when the economic crisis started to effect the global economy. The data from Stat World Fab Watch has been used in the paper. Achievements and potential of "Integral" PC — the parent organization responsible for the microelectronic industry in Belarus — are also reviewed.

The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.

Представлены результаты имитационных исследований радиационных эффектов в БиКМОП БИС интерфейсного приемопередатчика последовательных данных 5559ИН2Т. Установлено, что исследованные БИС являются достаточно радиационностойкими: сохраняют основные параметры в пределах ТУ при воздействии эквивалентной мощности дозы импульсного ионизирующего излучения до Р=1?109 ед/с, а также дозы стационарного ионизирующего излучения до D=2.4?105 ед и функционируют до Р=2?1010 ед/с при температурах окружающей среды от –60 до +125°С. Рассмотрены физические механизмы, объясняющие полученные закономерности. Полученные аналитические зависимости тока потребления БИС от дозы облучения в виде полинома второй степени могут быть использованы для прогнозирования устойчивости БиКМОП БИС к воздействию стационарного ионизирующего излучения.

The results are presented of a radiation-effect simulation in the 5559IN2T serial-data BiCMOS LSI interface transceiver. The circuit is found to have a fairly high level of radiation hardness: the performance parameters considered remain within the tolerance limits at equivalent dose rates of pulsed radiation up to P = 1 × 109 unit/s and at equivalent doses of steady-state radiation up to D = 2.4 × 105 units, and the circuit can operate at equivalent dose rates up to P = 2 × 1010 unit/s over the temperature range −60 to +125°C. The physical mechanisms underlying the observed behavior are discussed. Analytical formulas are derived that represent the dose dependence of transceiver consumption current as a quadratic polynomial. They could be used to predict the resistance of the circuit to steady-state ionizing radiation.

Tracks of the material of microparticles interacting with a metallic obstacle and a detector positioned behind it are presented. The experimental data obtained show that the degree of damage of microcircuits positioned behind an obstacle depends on the material of the particles acting on it.

Recording of the influence of the flux of high-velocity particles in the regime of superdeep penetration on the operating parameters of microcircuits placed behind a thick-walled obstacle is reported for the first time. It is proposed that this effect is possible in collision of a micrometeorite flux with a spacecraft, which can have an effect on the operation of its computer equipment.