Nowadays, the world is inseparable from the information technology (IT), while IT is inseparable from the integrated circuit (IC) semiconductor manufacturing technology, that is, microelectronics technology. The most critical technology in IC semiconductor manufacturing is lithography. Lithography emerged in 1958 when Texas Instruments produced the world's first planar IC. Over the past short 60 years, the lithography resolution limit has been broken again and again, creating a miracle on earth. As the basis of microelectronics technology, lithography and micro-nanofabrication technologies are the highest accuracy manufacturing techonologies so far. Lithography process sizes range from several hundredmicrons to 10 nanometers. Process methods develop from plate ruler scalpel and camera to electron beam lithography. Light source wavelengths range from optical exposure to extreme ultraviolet exposure. In the development process, integration increases by about ten billion times, while the characteristic dimension has been reduced to about one ten-thousandth of the original value. With the rapid development of IC, lithography has also moved from the era of equivalent Moore into the post-Moore era.

1960年,美国物理学家梅曼制成的第一台红宝石激光器的问世,使激光的高相干性、高亮度等优点引起了科学界的高度重视。激光是20世纪以来,继原子能、计算机、半导体之后,人类的又一重大发明。它的出现深化了人们对光的认识,扩展了光的应用范围,形成了对传统光源的技术革命。如今,激光在社会生活、工业生产、信息和通讯、医疗卫生和国防军事的各个领域都有巨大而广泛的应用及价值,如激光加工、探测、遥感、成像、眼科手术、红外夜视成像、激

自激光产生以来,人们已经利用非线性光学晶体材料中的各种非线性光学效应(倍频、和频、差频等)成功地将激光的窗口扩大到深紫外、可见、红外、太赫兹等范围,并实现了宽带相干光源和超快脉冲激光.然而,要在单块非线性晶体中实现更高次谐波的产生却是一个难以攻克的关卡,这是由于高次谐波实现的过程中涉及的非线性转换过程很多,而单块晶体所能提供的倒格矢很难同时对这些过程中的相位失配进行补偿.自非线性光学诞生五十年以来,还没有在单块晶体中获得过高效的高次谐波产生.

The HSQ has the advantages of high resolution,high contrast and low edge roughness.Through a lot of process experiments,the optimization conditions of the electron beam exposure dose,the proportion of the developer,the developing time and the developing temperature were explored.The relationship between electron beam exposure dose and line width was explored.The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated.Through adding appropriate NaCl in the conventional developer,the graphic contrast was improved effectively.The mechanism of action between NaCl and HSQ was analyzed.The colapse and adhesion of resist structure due to the effect of gas-liquid interfacial capilary surface tension were suppressed by the CO2supercritical drying

针对显影工艺中水的表面张力导致的高高宽比抗蚀剂图形的坍塌及黏连,提出了一种基于微波加热的干燥技术来有效改善纳米抗蚀剂图形的干燥效果。该方法利用微波穿透光刻胶结构直接加热光刻胶图形间隙中残存的去离子水,水分子吸收微波的光子能量迅速蒸发,从而有效地抑制光刻胶图形的坍塌与黏连现象。利用提出的基于微波加热的干燥方法,成功获取了高260nm、宽16nm的光刻胶线条组和直径为20nm的光刻胶柱形阵列,其中高高宽比线条组和由15 625根柱子组成的柱形阵列结构没有出现坍塌及黏连情况,验证了在微波产生的交变电场作用下,可以减小水分子团簇,降低水的表面张力。

A novel method based on electromagnetic wave (EW) was firstly proposed to dry photoresist with high aspect ratio after electron beam lithography. This method used EW to penetrate photoresist and heat the water stored between resist patterns directly, then the water evaporated with absorbing energy of EW. An array of 15,625 pillars and lines with 14.9 nm width of aspect ratio 13 and 17 respectively were dried successfully. By analyzing the heating mechanism, we demonstrated that the EW can decrease surface tension of water effectively and may be applicable for cleaning via hole and the inner wall of carbon nanotubes.

Pattern distortions caused by the charging effect should be reduced while using the electron beam lithography process on an insulating substrate. We have developed a novel process by using the SX AR-PC 5000/90.1 solution as a spin-coated conductive layer, to help to fabricate nanoscale patterns of poly-methyl-methacrylate polymer resist on glass for phased array device application. This method can restrain the influence of the charging effect on the insulating substrate effectively. Experimental results show that the novel process can solve the problems of the distortion of resist patterns and electron beam main field stitching error, thus ensuring the accuracy of the stitching and overlay of the electron beam lithography system. The main characteristic of the novel process is that it is compatible to the multi-layer semiconductor process inside a clean room, and is a green process, quite simple, fast, and low cost. It can also provide a broad scope in the device development on insulating the substrate, such as high density biochips, flexible electronics and liquid crystal display screens.

Electron beam direct wring lithography has been an indispensable approach by which all sorts of novel nano-scale devices include many kinds optical devices can be fabricated. Alignment accuracy is a key factor especially to those devices which need multi-level lithography. In addition to electron beam lithography system itself the quality of alignment mark directly influences alignment accuracy. This paper introduces fundamental of alignment mark detection and discusses some techniques of alignment mark fabrication along with considerations for obtaining highly accurate alignment taking JBX5000LS and JBX6300FS e-beam lithography systems for example. The fundamental of alignment mark detection is expounded first. Many kinds of factors which can impact on the quality of alignment mark are analyzed including mark materials, depth of mark groove and influence of multi-channel process. It has been proved from experiments that material used as metal mark with higher average atomic number is better beneficial for getting high alignment accuracy. Depth of mark groove is required to 1.5～5 μm on our experience. The more process steps alignment mark must pass through, the more probability of being damaged there will be. So the compatibility of alignment mark fabrication with the whole device process and the protection of alignment mark are both need to be considered in advance.

研究了采用高分辨率的100 kV电子束光刻和光学光刻系统相结合制作高线密度X射线双光栅的工艺技术,并且分析了电子束邻近效应校正技术在高线密度光栅制备中的应用.首先,利用电子束曝光和纳米电镀技术在同一衬底上制备两种不同线密度光栅图形;然后,利用光学光刻在2 000 lp/mm光栅上制备了自支撑加强筋结构.通过此技术制备的X射线双光栅成功集成了高线密度5 000 lp/mm透射光栅和2 000 lp/mm自支撑透射光栅,其栅线宽度分别为100和250 nm,金吸收体厚度达到400 nm.

基于液晶光学相控阵(LCOPA)电极基板的子阵列连接方案,利用电子束直写和激光直写混合光刻技术,进行了通光区域电极条纹、外围电路和子阵列联络孔的微纳米加工工艺研究.结果表明利用激光直写技术,可以形成最小线宽0.5μm的液晶光学相控阵电极图案,曝光时长48 min,具备可制造性.利用富含导电颗粒的SX AR-PC5000/90.1涂层,可以有效解决电子束在绝缘玻璃基底上直写时由电荷积累所产生的电子束曝光场拼接偏移与火花放电等问题,保证了电子束直接曝光子阵列电极上下导电层之间的联络孔套刻精度.利用特定电子束直写对准标记,解决了绝缘体表面在混合光刻中套刻对位精度问题.

The γ-ray irradiation hardness of arrayed silicon microhole-based radial p–n junction (ASMRJ) solar cells (SCs) has been experimentally studied. It was found that the sidewall morphology of the microhole arrays had an important effect on the radiation hardness, so the 4 µm-pitch ASMRJ SCs with hole arrays' sidewalls both unpassivated and passivated were made and referred to as 4 µm-U-ASMRJ and -P-ASMRJ SCs, respectively. On increasing the radiation doses, in contrast with the monotonous and rapid degradation of short circuit current density and open circuit voltage for the planar SCs, these parameters for the 4 µm-U-ASMRJ SCs show a small increase in the initial stage of γ-ray irradiation and then a slow decline. Average conversion efficiency shows an initial slight ascent by 4.5%. Additionally, the average conversion efficiency for the 2 µm-U-ASMRJ SCs shows an initial slight ascent by 5.7%. When the radiation doses grow to 8 × 106 rad, the average conversion efficiency degradation rates for the 2 µm- and 4 µm-U-ASMRJ SCs are 14% and 15%, respectively, whereas it is 39% for the planar SCs. The radiation-gettering mechanism is suggested to explain the radiation-hardened properties of the U-ASMRJ SCs.

In order to improve the graphic quality and resolution of the electron beam lithography(EBL),the methods to overcome the proximity effect were discussed from the aspects of the incident energy and the beam density,etc.The sub-30 nm structure was fabricated with the single-line exposure.In this method,the width of line in the layout was set to zero.So the lithography dimension of the line depends on the beam diameter,exposure dose and developing conditions.The mesh structure of the 20 nm-line width on the 400 nm thickness HSQ resist was realized through the single-line lithography.This experiment proves that dense-line and high aspect-ratio features can easily be made by single-line exposure.This approach was well applied in the fabrication of scanning electron microscope(SEM) magnification calibration standard specimen.The single-line exposure is an effective way to realize the ultimate resolution of the EBL.

To meet the increasing need of fabrication of nano-scale electronic devices with special structure,the resolution and performance of electron beam lithography need to be further improved.Therefore,choosing suitable high resolution electron beam resist appears to be especially important.The properties in electron beam exposure of three new kinds of resists including HSQ,Calixarene and ARN7520 were studied from the aspects of exposure dose and the influence of detail conditions in development and bake.At the same time their advantages and disadvantages were also discussed.The experiment indicates that the three resists all have high exposure resolution less than 50 nm.HSQ has better adhesion with substrates,well mechanical strength and contrast,which can be well applied in the manufacture of small-area dense figure.ARN7520 with higher sensitivity is less affected by proximity effect and more suitable for fabrication of complex layout.Calixarene also has high resolution,but the low sensitivity badly restricts its practicability.

An optical test system based on the optical fiber spectrum analyzer is designed and established. A series of two-dimensional periodic-arrays samples with chiral morphology are fabricated by electron-beam lithography technology. The periods of samples are measured by scanning electro microscope (SEM), which are 520 nm, 570 nm, and 790 nm respectively. On condition that the incident light is perpendicular to the surface of the sample, the change rule of the spectrum with diffraction angle under the white light is tested and analyzed firstly. Meanwhile, the measurement effect on the cycle length of complex morphology two-dimensional periodic-arrays is tested by diffraction optical method. The results indicate that the diffraction spectra of all samples will gradually move to long wavelength when the diffraction angle increases. And on the same diffraction angle, there is a relationship between the diffraction wavelength and the period length of the sample. Through the derived cross-grating diffraction equation, the diffraction spectral change of the sample under the normal incidence is simulated. The result is satisfied well, which indicates the applicability of cross-grating diffraction equation in complex morphology structure. Thus the period lengths of the samples are calculated, and we get that the deviation of the results from the observations of SEM is less than 3%.

Algorithm of digital image processing is introduced to data-processing and conversion of mask layout system.A software module has been developed to achieve bmp file input,gray-scale quantification,contrast stretching,edge detection,polygon approximation and GDSII file output.Experiment results show that this system can successfully converse complex bmp image to GDSII file.

The basic structures and key technologies of two high efficency back-contact solar cells are introduced,including metal wrap through(MWT)solar cells and emitter wrap through(EWT)solar cells.These two kinds of the solar cells are the relatively high-end battery types at present,the efficiency of a single solar cell is about 20%,and the module efficiency is 17%.The advantages of these cells are achieving the same rear assembly,reducing the shading loss and applying to the mass production.For the key technologies of MWT and EWT solar cells,the gene-ric technologies of these two kinds of solar cells are summarized,such as the laser drilling,texturing,diffusion,surface passivation and electrode preparation,and the problems and the development of the key technologies are proposed and prospected.

The development and importance of the surface passivation for the crystalline silicon(c-Si)solar cells,and various passivation films and surface passivation technologies are introduced.The latest research progresses of the surface passivation for the crystalline silicon solar cells both at home and abroad are described,a variety of surface passivation schemes using diffe-rent materials,such as SiO2,SiNx,SiCx and Al2O3,and the application advantages and disadvantages of the stacks are discussed emphatically.Based on the discussion above,it is pointed out that the SiO2/SiNx stack passivation films will be the key research of the industrial production,while the Al2O3 and its stacks will become a research focus for the laboratory in the future.The good surface passivation is one of the effective methods to increase the conversion efficiency of the crystalline silicon solar cells,thus the surface passivation for the crystalline silicon solar cells still is the global research hot spot on the way forward.

首先从实验现象出发,阐述了纳米级高密度、高深宽比电子抗蚀剂图形结构发生倒塌与粘连的主要几何因素及其关系。除了结构的几何因素外,结合"Beam Sway"模型分析了抗蚀剂微细结构在制作过程中的受力情况。在上述工作的基础上,提出了克服纳米级高密度、高深宽比电子抗蚀剂图形结构倒塌与粘连的相应措施。其中,通过实验验证了超临界CO2干燥技术对于电子束抗蚀剂ZEP520A用于制作周期200nm及150nm、深宽比超过4的光栅图形结构具有良好的效果。

The key technologies of the micro/nano-fabrication,i.e.,electron-beam lithography technology and pattern data process technology are presented,including electron-beam direct writing(EBDW)technology and electron-beam proximity effect correction(EPC)technology,mix and match techniques between optical lithography system and electron-beam lithography system,electron-beam lithography process technology,pattern data process and conversion techno-logy in micro-lithography,electron-beam proximity effect correction in pattern data process.Several conventional resists suitable for electron-beam lithography with their process specifications and reference process data are recommended especially.Finally,the editor module to generate complicate patterns composed with instanced cells repositioned at all angles and function curves are also recommended,which can be easily called in the integrated circuit board editor software of L-Edit.