Carbon-based microwave-absorbing (MA) aerogel materials have emerged as a prominent research focus in recent years due to their three-dimensional (3D) interconnected conductive networks and diverse porous microstructures, which optimize impedance matching and dissipate microwaves through multiple loss effects. Guided by the research rationale of constructing carbon-based aerogels with diverse microstructures and corresponding unique electromagnetic response behaviors, this review systematically summarizes recent advances in carbon-based microwave-absorbing aerogels over the past five years, with particular emphasis on the rational design of carbon-based aerogels using different templating strategies. These include hard-template methods based on natural biomass and polymer foams, soft-template approaches such as isotropic and directional freeze-drying, and non-template techniques such as electrospinning and 3D printing. By discussing the mechanisms and advantages of these synthesis strategies in depth, the relationship between porous architecture and microwave response properties is elucidated, while also providing insights and perspectives on future carbon-based microwave-absorbing aerogels with synergistic performance and potential for large-scale production.

ABSTRACT Integrating 2D and 3D semiconductors via van der Waals (vdW) heteroepitaxy offers significant opportunities for multifunctional optoelectronics. However, conventional devices often face limited detection ranges and inadequate noise suppression. We report a wafer‐scale vertical p‐Mo x Nb 1‐x S 2 /n‐GaN vdW heterojunction photodetector, rationally engineered with precisely regulated p‐type doping and Type‐II band alignment. This architecture facilitates a carrier separation efficiency of 92% and a superior responsivity of 688.1 A/W, endowing the device with an ultrahigh optical gain of 65 500, a specific detectivity of 1.66 × 10 14 Jones, and a noise‐equivalent power of 3.13 × 10 −17 W Hz −12 . Spanning the ultraviolet‐to‐visible regime (365–660 nm), these performance metrics outperform state‐of‐the‐art Si and InGaAs detectors by orders of magnitude. The synergistic interplay between the vertical transport pathway and optimized material composition enables rapid temporal responses and exceptional noise suppression. Beyond conventional imaging, the detector achieves centimeter‐level environmental perception accuracy, directly fulfilling the requirements of intelligent driving and machine vision. This study establishes an innovative material–architecture paradigm for GaN‐compatible optoelectronics, laying a foundation for next‐generation autonomous sensing platforms.

In this work, a ReMoS2 2-D material was grown on a sapphire planar substrate (FS) by chemical vapor deposition (CVD), and transferred to a gallium nitride patterned substrate (PGS) by a wet-transfer process to prepare ReMoS2/FS and ReMoS2/PGS photodetectors. Compared with the performance of the ReMoS2/FS photodetector, the ${I}_{\mathbf {light}}$ / ${I}_{\mathbf {dark}}$ of the ReMoS2/PGS photodetector is ${1.35} \times {10}^{{3}}$ , the responsivity is 91 A/W, and the detectivity is ${4.1} \times {10}^{{10}}$ Jones under the irradiation of light with a wavelength of 460 nm, which are increased by 46, 56, and 151 times, respectively. At the same time, the ReMoS2/PGS photodetector also has imaging capability and communication function.

Owing to high theoretical capacity, low cost, intrinsic safety, and abundant zinc reserves, aqueous zinc-ion batteries (AZIBs) are emerging as promising alternatives to lithium-ion batteries for energy storage. However, the zinc metal anode (ZMA), one of the most promising candidates, suffers from severe parasitic reactions and dendrite growth, significantly compromising the cycling stability and Coulombic efficiency (CE). Herein, we introduce lecithin, an amphiphilic biomolecule, as an electrolyte additive to construct an oriented phospholipid adsorption layer at the ZMA/electrolyte interface. This engineered layer establishes ordered ion transport channels that facilitate 3D diffusion of Zn2+, enabling uniform zinc deposition and thereby suppressing dendrite formation. Simultaneously, the directionally arranged phospholipid adsorption layer can prevent active water molecules in the electrolyte from coming into direct contact with ZMA, mitigating the water-induced hydrogen evolution reaction (HER). Benefiting from this synergy, the ZMA exhibits highly reversible deposition/stripping behavior with exceptional CE. Specifically, the Zn||Zn symmetric cell achieves ultralong cycling stability over 3500 h at 1 mA cm-2, while the Zn||Cu asymmetric cell maintains an average CE of 99.6% after 500 cycles. This work provides a simple yet effective strategy for constructing long-term stability AZIBs, offering novel insights into interfacial engineering for zinc anodes.

In this study, we employed Hydride Vapor Phase Epitaxy (HVPE) to grow low dislocation density (similar to 1.5x10(6) cm(-2)) free-standing gallium nitride (GaN) substrates and epitaxial layers, which were utilized to fabricate high-quality vertical GaN MOS capacitors. An interlayer technology was introduced, where atomic layer deposition (ALD) was used to deposit a thin gallium oxide (GaOx) interlayer at the Al2O3/GaN interface. The resulting devices exhibited a low interface trap density (D-it) of (similar to 8x10(10)cm(-2) eV(-1)) and a V-FB hysteresis of as low as 50mV. The introduction of the GaOx, interface technology not only suppressed gate leakage current but also passivated nitrogen and oxygen-related vacancies and dangling bonds. This approach offers new insights for the manufacturing of vertical GaN MOSFETs.

This work reports a high-performance vertical p-NiO/n-GaN heterojunction diode (HJD). Using low-dislocationdensity GaN epitaxial wafers grown by hydride vapor phase epitaxy (HYPE), oxygen plasma treatment (OPT) of the N-face effectively mitigated Fermi-level pinning and passivated the surface, reducing the contact resistance (p(c)) to 3.84x10(-6) Omega center dot cm(2). Oxygen post-annealing (OPA) of sputtered NiO films optimized the heterojunction interface. As a result, the breakdown voltage increased to 1135 V, the figure of merit (FOM) reached 0.23 GW/cm(2), and the on-state resistance (R-on,R-sp) decreased to 5.7 m Omega center dot cm(2). These results highlight the potential of p-NiO, OPA, and OPT in enhancing GaN power device stability and reliability.

In this Letter, we demonstrate low-resistance Ohmic contacts on N-polar GaN via plasma surface treatment, systematically investigating optimization mechanisms. O-2 plasma treatment induces the formation of an ultrathin (similar to 2 nm) oxide interlayer at the metal-semiconductor interface, which serves dual roles. It prevents direct metal-GaN interaction and reconstructs surface states through oxygen passivation. This dual functionality significantly mitigates Fermi-level pinning and reduces the effective Schottky barrier height. These interfacial modifications yield a remarkably low specific contact resistivity (rho(c)) of 3.84 x 10(-6) Omega cm(2), as measured by the multi-ring circular transmission line model. This plasma-based strategy establishes a scalable approach for high-performance Ohmic contacts in GaN devices.

Background The relationships between Ki-67/MKI67 expression, lymph node metastasis (LNM), vascular invasion (VI), and perineural invasion (PI) in esophageal squamous cell cancer (ESCC) remain unclear. This retrospective cohort study was performed to evaluate the prognostic value of Ki-67 expression and its association with LNM in patients with resected ESCC. Methods The analysis included 168 patients with ESCC with available Ki-67 protein expression data. The patients were divided into Ki-67 high-expression group (Ki-67 High, 93 cases) and Ki-67 low-expression (Ki-67 Low, 75 cases) groups. Associations between Ki-67 expression and ESCC pathological features was assessed using chi-square test. Overall survival (OS) was compared between the two groups using Kaplan–Meier survival analysis and Cox proportional hazards model. Results Median follow-up duration was 33.5 months (range 3.0–60.0 months). High Ki-67 expression was significantly associated with poor OS in patients with ESCC compared to that of the low-expression in both univariate (hazard ratios (HR) = 3.42, 95% CI [2.22–5.27], P < 0.001) and multivariate analyses (HR = 1.98, 95% CI [1.33–2.94], P < 0.001). Furthermore, high Ki-67 expression was significantly associated with an increased risk of LNM (χ2 = 11.219, P = 0.011), VI (χ2 = 6.359, P = 0.012), and PI (χ2 = 8.877, P = 0.003). Conclusions High Ki-67 protein expression is associated with poor prognosis in ESCC. Increased Ki-67 expression significantly increases the risk of LNM, VI, and PI in ESCC, and thus may serve as an indication for adjuvant therapy in ESCC management.

Gallium nitride (GaN)-based power devices have attracted significant attention due to their superior performance in high-frequency and high-power applications. However, the high-power density in these devices often induces severe self-heating effects (SHEs), which degrade their performance and reliability. Traditional thermal management solutions have struggled to efficiently dissipate heat, thereby leading to suboptimal real-world performance compared with theoretical predictions. To address this challenge, diamond has emerged as a highly promising substrate material for GaN devices, primarily due to its exceptional thermal conductivity and mechanical stability. GaN-on-diamond technology has a thermal conductivity of 2 200 W/m/K and it significantly enhances heat dissipation at the chip level. In this review, we provide a systematic overview of the two main integration methods for GaN and diamond: bonding and epitaxial growth techniques. Moreover, we elaborate on the impact of thermal boundary resistance (TBR) at the interface. According to the diffuse mismatch model, the TBR of GaN-on-diamond interfaces can be as low as 3 m2K/GW, which is markedly superior to silicon carbide substrates. In addition, novel techniques such as patterned growth, nanocrystalline diamond (NCD) capping films, and diamond passivation layers have been explored to further enhance thermal management capabilities. We also consider the roles of intermediate dielectric layers in reducing TBR, promoting diamond nucleation, and protecting the GaN layer. Thus, in this review, we summarize the current state of research into GaN-on-diamond technology, highlighting its revolutionary impact on thermal management for power devices and providing new pathways for the development of high-power GaN devices in the future.

The article puts forward the “Liyuan Law,” which means that the output power of commercial GaN fast chargers grows by an average of about 50% every 12 months. Research from 2018 to 2025 on consumer-grade and industrial-grade GaN products found that in consumer-grade products, from Anker’s 30 W to super 300 W, with a power density of more than 3.3 W/cm 3 , technology stratification is obvious. Since 2020, Navitas and other server power breakthroughs have been penetrating the market at an accelerated pace. By 2023–2024, the power density will be enhanced for data centres and other large-scale applications. Two areas of power growth fit the “Liyuan Law,” promoting GaN technology innovation. In the future, GaN technology is expected to continue rapid iteration as predicted by the law, expanding application areas and opening a new era of high-efficiency power equipment.

We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (Ron,Sp). In addition, it allows for a reduction in the turn-on voltage (Von) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the Von of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.

The capacity decays of MnO2 caused by its irreversible structural changes and volume expansion is a thorny problem for aqueous zinc-ion batteries (AZIBs), which can be accelerated by the inevitable dissolution of Mn. Herein, a 3D hollow urchin-like alpha-MnO2 (HUM) with a high Young's modulus of 27.8 MPa was prepared, which can effectively relieve the stress accumulated by volume expansion of MnO2 during cycling. As a result, HUM delivers a cycle life of up to 1000 cycles at a current density of 500 mA g-1, which is about 5.17 times longer than that of ordinary nanotubes alpha-MnO2 (NAM). The large specific surface area (137.4 cm3 g-1) of HUM makes it showing more active sites, which can promote the uniform deposition of dissolved Mn2+ and efficiently conversion between Mn2+ and MnO2. Hence, HUM shows an enhanced initial capacity of 345.7 mA h g-1 compared with that of 142.2 mA h g-1 for NAM. In this work, we also investigated the two pH-controlled charge storage mechanisms and related evolutions of phase transition during charge/discharge to emphasize the importance of Mn2+ and Zn4SO4(OH)6 center dot xH2O, aiming to bring new insights into future studies on the commercialization of alpha-MnO2-based AZIBs.

In this article, we report the investigation into the stability of p-GaN gate high electron mobility transistors (HEMTs) with an internal integrated gate circuit that led to the design of a capacitance-based circuit to address threshold voltage shifts (ΔVTH). Pulse I–V measurement revealed a notable positive gate VTH shift of 0.7 V as the drain voltage increased from 0 to 650 V, highlighting the impact of drain bias on VTH instability. Through the investigation of drain bias-induced VTH instability and the behavior of carriers being transported within the gate region, it was found that the maximum ΔVTH is 0.4 V when a 200-V drain bias is applied; after stress removal, ΔVTH diminishes gradually due to the discharge of capacitance, and holes enter the p-GaN layer to mitigate the depletion of holes. The integration of passive components and p-GaN gate HEMT circuits is suggested to address VTH instability in enhancement-mode HEMT devices. The reliability of power devices is essential for their acceptance in emerging applications.

We demonstrated the vertical NiO/beta-Ga(2)OTEXPRESERVE5 p-n heterojunction diodes (HJDs) with a high breakdown voltage (V-BR) of 3000 V and a low ON-resistance (R-on,R-sp) of 3.12 m Omega.cm(2), resulting in a Baliga's figure of merit (FOM) of 2.88 GW/cm(2). Specifically, an efficient and low-damage edge termination (ET) formed by the implantation of lightweight Helium atoms was introduced to inhibit the high electric field at the p-n junction of HJDs, thereby increasing V-BR of devices from 1330 to 3000 V. The reverse leakage mechanisms were fit and analyzed, revealing distinct breakdown mechanisms in He-implanted devices. The simulation results confirmed the peak electric field at the p-n junction of devices can be effectively suppressed by He-implanted ET. Meanwhile, a narrow change of devices' R-on,R-sp occurred after He implantation and the low-R-on,R-sp forward conduction of devices was confirmed by efficient charge transfer of heterojunction with density functional theory (DFT) calculation. This work may provide a new insight into the design and fabrication of high-power, low-loss beta-Ga2O3 bipolar power devices.

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AbstractThe utilization of alloyed 2D transition metal dichalcogenides (TMDs) has become a pivotal approach for addressing challenges in material applications. The judicious selection of dopant constituents offers a potent means to finely modulate the materials' bandgap, consequently broadening the potential applications of 2D materials. In the context of an investigation, Mo1−x−yRexWyS2 is successfully synthesized using chemical vapor deposition. With a bandgap of 1.33 eV, this material exhibits promising prospects for application in the realm of optoelectronics. This advancement enables the fabrication of the Mo1−x−yRexWyS2 photodetector. The rigorous testing and analysis of photoelectric performance reveal significant improvements in both responsivity and response speed compared to analogous detectors. This accomplishment not only furnishes a novel paradigm for the advancement of photodetectors but also contributes fresh insights to the domain of alloyed 2D TMDs.

In this work, we investigated the stability of a p-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve p-GaN gate stability by using capacitance to release the hole into the p-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift δVTH) of 0.4 V is observed with increasing voltage from 3 V to 8 V; δVTH initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and p-GaN gate HEMT circuit are recommended to mitigate the VTH instability for E-mode HEMT.

Micro-supercapacitors (MSCs) are of interest because of their high power density and excellent cycling performance, offering a broad array of potential applications. However, preparing electrodes for the MSCs with an extremely high areal capacitance and energy density remains a challenge. We constructed MSC electrodes with an ultra-high area capacitance and a high energy density, using reduced graphene oxide aerogel (GA) and MoS2 as the active materials, combined with 3D printing and surface modification. Using 3D printing, we obtained electrodes with a stable macrostructure and a GA-crosslinked micropore structure. We also used a solution method to load the surface of the printed electrode with molybdenum disulfide nanosheets, further improving the electrochemical performance. The surface capacitance of the electrode reached 3.99 F cm−2, the power density was 194 W cm−2, and the energy density was 1 997 mWh cm−2, confirming its excellent electrochemical performance and cycling stability. This work provides a simple and efficient method for preparing MSC electrodes with a high areal capacitance and energy density, making them ideal for portable electronic devices.

Aqueous Zn-based energy storage devices have broad prospects in the direction of large-scale energy storage, but the Zn anode still has problems, such as poor reversibility and unsatisfactory performance at low temperature. Due to the influence of thermodynamics at low temperature, the dissolution of the Zn ion becomes more difficult, which will intensify the growth of Zn dendrites. In this study, amphiphilic-ion Betaine (Bet) was introduced into 2 M ZnSO4 aqueous electrolyte as an antifreeze to improve the stability of Zn anode at different temperatures. It is found that Bet can not only participate in the solvation structure of the Zn ion but also be adsorbed on the Zn anode surface directionally, ensuring good reaction kinetics at low temperature, which can inhibit the growth of Zn dendrites and improve its electrochemical performance at low temperature. The results show that, due to the introduction of Bet, Zn//Zn symmetric cells can cycle stably for more than 2000 h under 25 degrees C, and they can also cycle stably for more than 1000 h under an extreme condition of -20 degrees C. This work provides a reasonable method for the design of low-temperature and high-rate Zn-based energy storage devices.

Micro-supercapacitors (MSCs) are of interest because of their high power density and excellent cycling performance, offering a broad array of potential applications. However, preparing electrodes for the MSCs with an extremely high areal capacitance and energy density remains a challenge. We constructed MSC electrodes with an ultra-high area capacitance and a high energy density, using reduced graphene oxide aerogel (GA) and MoS2 2 as the active materials, combined with 3D printing and surface modification. Using 3D printing, we obtained electrodes with a stable macrostructure and a GA-crosslinked micropore structure. We also used a solution method to load the surface of the printed electrode with molybdenum disulfide nanosheets, further improving the electrochemical performance. The surface capacitance of the electrode reached 3.99 F cm-2, -2 , the power density was 194 W cm-2, -2 , and the energy density was 1 997 mWh cm-2, -2 , confirming its excellent electrochemical performance and cycling stability. This work provides a simple and efficient method for preparing MSC electrodes with a high areal capacitance and energy density, making them ideal for portable electronic devices.