Hypoxic-ischemic brain damage (HIBD) is a primary cause of neonatal neurological dysfunction, such as cerebral palsy, characterized by complex cascades of neuronal death. Despite the urgent need, effective therapeutic strategies are scarce, and the efficacy of standard interventions, such as therapeutic hypothermia, remains limited. Astragaloside IV (AS-IV), a promising neuroprotective agent, is hindered from wide clinical applications by poor permeability across the blood-brain barrier (BBB) and low bioavailability. To overcome this bottleneck, we developed a novel targeted delivery system based on neural stem cell-derived extracellular vesicle, designated AS-EV, which efficiently deliver AS-IV to the HIBD-affected brain region. AS-EV were successfully prepared via ultracentrifugation and sonication-loading, exhibiting typical exosomal characteristics, and favorable drug-loading efficiency. In vivo experiments confirmed that AS-EV effectively crossed the BBB to accumulate in the injured brain region with satisfying biocompatibility. Mechanistic investigation using primary cortical neurons revealed that the core therapeutic mechanism of AS-EV is mediated by mTOR activation, which consequently suppressed HIBD-induced neuronal apoptosis, an effect that was abrogated by mTOR inhibition. Furthermore, functional and histological assessments demonstrated that AS-EV intervention significantly promoted neurological function recovery, alleviated brain tissue pathology, protected white matter integrity, facilitated neural structural remodeling, and inhibited glial scar proliferation in neonatal HIBD rats. In conclusion, NSC-EV-mediated delivery of AS-IV exerts multifaceted neuroprotective and reparative effects by activating the mTOR pathway, offering a promising therapeutic strategy for HIBD.

Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy device operation. However, the n-type dominance of ultrathin oxide FET has hindered their integration into complementary metal-oxide-semiconductor (CMOS) technology, which requires both n-and p-type devices. Here we develop an ab initio device-driven computational screening workflow to identify sub-1-nm thickness oxide semiconductors for sub-5-nm FET applications. We demonstrate that ultrathin CaO2, CaO, and SrO are compatible with p-type device operations under both high-performance (HP) and low-power (LP) requirements specified by the International Technology Roadmap of Semiconductors (ITRS), thereby expanding the limited family of p-type oxide semiconductors. Notably, CaO and SrO emerge as the first-of-kind sub-1-nm thickness oxide semiconductors capable of simultaneously meeting the ITRS HP and LP criteria for both n-and p-type devices. CaO and SrO FETs outperform many existing low-dimensional semiconductors, exhibiting scalability below 5-nm gate length. Our findings offer a pioneering effort in the ab initio, device-driven screening of sub-1-nm thickness oxide semiconductors, significantly broadening the material candidate pool for future CMOS technology nodes.

BackgroundCerebral palsy (CP) is a non-progressive brain injury primarily characterized by abnormal posture and movement disorders. Among them, spastic cerebral palsy (SCP) accounts for 70% of cases. Previous small sample hematological data analyses have revealed significant differences in inflammatory marker ratios between SCP patients and healthy controls. This study aims to expand the sample size and perform a multidimensional data analysis using routine hematological indicators to identify hematological features of spastic cerebral palsy, potentially providing new directions for the treatment of SCP.MethodsThis retrospective study included 305 children with spastic cerebral palsy and 149 healthy children, aged 3–12 years. Previous routine blood and biochemical test results were collected from the participants. Statistical analysis was performed on clinically common indicators and related composite indicators, and subgroup analyses were conducted based on age group (preschool vs. school-age).ResultsCompared to the healthy control group, SCP patients had significantly lower levels of NPAR, alkaline phosphatase (ALP), creatinine (Cr), SII, and MPV/PC (p < 0.05). AST/ALT, NLR, total protein, and SIRI levels were significantly higher in the SCP group (p < 0.05). Logistic regression analysis showed that ALP, Cr, SII, and MPV/PC were protective factors for SCP, while AST/ALT and NLR were risk factors for SCP. Combining these indicators for SCP diagnosis, the ROC curve analysis yielded an AUC of 0.781. Subgroup analysis showed that children aged 3–6 years with SCP had significantly lower Cr, AST/ALT, SII, MPV/PC, and NLR levels compared to children aged 7–12 years with SCP. Furthermore, creatinine, AST/ALT, SII, MPV/PC, and NLR levels were positively correlated with the age of SCP children.ConclusionThis study reveals a significant association between alkaline phosphatase, creatinine, AST/ALT, SII, MPV/PC, NLR in routine blood indicators and the risk of SCP, providing important reference for clinicians to monitor the health status of children with cerebral palsy, optimize treatment plans, and implement nutritional interventions.

Background:Cerebral palsy (CP) represents the most prevalent motor disability in childhood, with spastic cerebral palsy (SCP) constituting the predominant subtype. However, systematic characterization of differences in systemic inflammatory status and metabolic profiles between children with SCP and healthy peers remains limited. Here, we applied an interpretable machine-learning framework to evaluate and identify clinically informative inflammation- and metabolism-related biomarkers in children with SCP, thereby providing potential implications for disease monitoring and informing targeted intervention strategies. Methods:In this retrospective study, 330 children with spastic cerebral palsy (SCP) and 150 healthy controls were enrolled. Complete blood count and serum biochemical parameters were collected, from which 10 systemic immune-inflammation indices were derived. Feature preselection was performed using least absolute shrinkage and selection operator (LASSO) regression, followed by univariable and multivariable logistic regression to identify biomarkers independently associated with the outcome. Model interpretability was assessed using SHapley Additive exPlanations (SHAP), and feature importance was ranked according to SHAP values. Restricted cubic splines (RCS) were applied to evaluate potential nonlinear associations between key indicators and outcome risk, while receiver operating characteristic (ROC) curves were used to assess discriminative performance. Additionally, children with SCP were stratified into severe and mild subgroups according to the Gross Motor Function Classification System (GMFCS) levels, and inflammatory and biochemical differences across severity strata were analyzed. Data were split in a 7:3 ratio using outcome-stratified sampling, with the training set used for model development and the test set for independent performance validation. Results:Multivariable logistic regression identified 7 independently associated biomarkers: MPV, CHO, DBIL were protective factors, whereas PDW, BASO%, GLB, MCHC were risk factors. A nomogram constructed based on these biomarkers demonstrated favorable performance in discriminating SCP from controls; in the independent test set, the AUC was 0.972 (95% CI, 0.935-0.998). In the SCP subgroup analysis, 330 children were stratified by GMFCS into a severe group (n = 160, levels 4-5) and a mild group (n = 170, levels 1-3). Multivariable logistic regression indicated that ALT and WBC were positively associated with severe cerebral palsy, whereas ALP showed a weak negative association. The subgroup model yielded an AUC of 0.717 (95% CI, 0.615-0.817) in the independent test set (n = 99), indicating modest discriminative ability and thus should be interpreted as exploratory. Conclusion:This study systematically characterized the inflammation- and metabolism-related profiles that distinguish children with spastic cerebral palsy (SCP) from healthy controls and identified biomarkers associated with disease severity. Indicators such as mean platelet volume (MPV) and platelet distribution width (PDW) may serve as potential biological correlates for monitoring disease status and evaluating intervention responses in SCP.

BACKGROUND:Ligusticum sinense 'Chuanxiong', a Chinese medicinal herb, has long been used clinically to treat injuries. Its primary active compound, tetramethylpyrazine (TMP), has been demonstrated to mitigate oxidative damage in spinal cord injury (SCI) and is emerging as a potential therapeutic agent. However, translating the broad efficacy of natural compounds such as TMP into effective SCI therapies remains difficult, largely because clearly defined primary targets are lacking. This study aims to elucidate the mechanisms through which TMP improves SCI, providing a foundation for targeted therapeutic approaches. METHOD:A rat spinal cord contusion model was employed to investigate therapeutic targets of TMP. Motor function was assessed through behavioral tests, while tissue repair was evaluated by histological analysis. Transcriptome sequencing was utilized to identify key microRNAs and downstream mRNAs. In PC12 cells, an H2O2-induced oxidative stress model and a lentiviral Pannexin 1 (Panx1)-overexpressing stable line were established. Mechanisms were further validated using luciferase assays, dihydroethidium (DHE) and 2,7-dichlorodihydrofluorescein diacetate (DCFH-DA) staining, live/dead staining, Western blot, PCR, transmission electron microscopy, and immunofluorescence. RESULTS:TMP enhanced motor function and promoted neuronal survival around the lesion site in SCI rats. Transcriptomic analysis identified miR-144-5p as a crucial mediator, which was upregulated post-treatment. miR-144-5p directly downregulates Panx1, thereby enhancing mitophagy. This reduction in oxidative stress, contributed to improved neuronal survival and functional recovery. CONCLUSIONS:TMP enhances mitochondrial autophagy and reduces ROS production following SCI by upregulating miR-144-5p and inhibiting Panx1 expression.

PurposeThis bibliometric and scientometric study mapped the development, collaboration structure, thematic organization, and temporal evolution of Chinese- and English-language research on traditional Chinese medicine (TCM)-related interventions for cerebral palsy (CP).MethodsPublications were retrieved from Web of Science Core Collection, Scopus, PubMed, Embase, China National Knowledge Infrastructure, Wanfang Data, and the Chinese Science and Technology Journal Database from inception to July 20, 2026. Eligible peer-reviewed articles and reviews were analyzed separately by language. Excel supported descriptive analysis, VOSviewer keyword co-occurrence and overlay mapping, CiteSpace keyword burst detection, and Python with NetworkX coauthorship analysis. Parameter sensitivity analyses and an author-developed integrative thematic synthesis were also performed.ResultsThe final corpora included 3,225 Chinese-language and 230 English-language publications. Chinese-language output rose markedly after the late 2000s and peaked in 2020, whereas English-language output remained smaller and more variable. The English-language coauthorship network was more connected and had a higher multi-author publication rate. At a minimum occurrence threshold of five, 179 of 2,115 standardized Chinese keywords and 70 of 955 standardized English keywords were retained. Five research domains were identified: clinical rehabilitation and functional outcomes; spasticity and symptom-oriented management; TCM intervention modalities; clinical research design and evidence synthesis; and experimental and mechanistic research. Temporal analyses indicated a broadening from general clinical applications toward function-oriented assessment, evidence synthesis, and mechanistic investigation. Sensitivity analyses supported the broad thematic structure, although several recent burst signals were parameter-sensitive.ConclusionThe corpora showed distinct publication and collaboration patterns but overlapping thematic structures. These findings map the literature’s organization and evolution but do not establish efficacy, safety, or certainty of evidence. Priorities include prospectively registered multicenter studies, standardized intervention reporting, a core outcome set, systematic safety assessment, and clinically anchored mechanistic research.

Ferroelectric field-effect transistors (FeFETs), as an electric field-driven nonvolatile memory, offer extremely low power consumption and high speed. Despite efforts, FeFETs have not been successfully scaled down to sub-5-nanometer-node technology, with their operational voltage exceeding 1.5 V, making them unable to match monolithic logic cores. Our study used metallic single-walled carbon nanotubes as gate electrodes to shrink the gate length of molybdenum disulfide FeFET to 1 nanometer. This nanogate approach leads to an electric field concentration and enhanced ferroelectric-to-metal-oxide semiconductor capacitance coupling, resulting in a reduced operating voltage of 0.6 V, below the conventional ferroelectric coercive voltage. The nanogate molybdenum disulfide FeFETs exhibit superior memory performance, with a substantial current on/off ratio of 2 × 106 and a rapid programming speed of 1.6 nanoseconds. This study demonstrates the immunity of nanogate FeFETs to short-channel effects, highlighting the notable potential of ferroelectric electronics for enabling superior scaling, performance, and energy efficiency in sub-1-nanometer-node chips.

Metabolic dysfunction-associated steatotic liver disease (MASLD) is associated with disrupted iron homeostasis, lipid peroxidation, and ferroptosis-related liver injury. Although exercise is recommended for MASLD management, whether moderate-intensity continuous training (MICT) and high-intensity interval training (HIIT) exert comparable effects on hepatic iron metabolism and ferroptosis-related changes remains unclear. This study compared the effects of MICT and HIIT on hepatic iron homeostasis, ferroptosis-related markers, and lipid metabolic remodeling in high-fat diet (HFD)-induced MASLD rats. Forty male Sprague-Dawley rats were assigned to a normal-fat diet group or an HFD group. After 8 weeks of HFD feeding, HFD-fed rats were further divided into HFD control, MICT, and HIIT groups and underwent an additional 8-week intervention. HFD feeding induced metabolic dysfunction, hepatic steatosis, liver injury, iron accumulation, increased activation-related markers of the IL-6/JAK2/STAT3-hepcidin pathway, and ferroptosis-related changes, including reduced GPX4 and increased PTGS2 and MDA. Both MICT and HIIT improved metabolic and histological outcomes, reduced hepatic Fe2+ accumulation and lipid peroxidation, increased FPN1 expression, decreased DMT1 expression, reduced activation-related markers of IL-6/JAK2/STAT3-hepcidin signaling, and improved antioxidant defense. Untargeted lipidomics indicated partial remodeling of HFD-induced disturbances in glycerophospholipid, glycerolipid, sphingolipid, ether lipid, thermogenesis, insulin-resistance, and AMPK-related pathways. Most endpoint outcomes did not differ significantly between MICT and HIIT. Because no pathway-specific manipulation, iron-rescue experiment, or ferroptosis inhibitor was used, the present data do not establish that the IL-6/JAK2/STAT3-hepcidin-FPN1 axis causally mediates the exercise response. Instead, the findings indicate that MICT and HIIT exert broadly comparable protective effects that are associated with improved hepatic iron homeostasis, lower ferroptosis-related susceptibility, and hepatic lipid metabolic remodeling.

Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid‒liquid‒solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire ~5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature.

Two-dimensional (2D) semiconductors have emerged as promising candidates for enabling complementary metal-oxide-semiconductor (CMOS) technology in post-silicon electronics. However, a significant performance gap between 2D p-type and n-type transistors hampers their immediate industrial application. In this Comment, we discuss recent advances in high-performance 2D p-type transistors, outline a roadmap for their potential development, and propose benchmark performance metrics to guide future progress. The performance of p-type transistors based on 2D semiconductors has not yet reached the level required for the realization of competitive complementary metal-oxide-semiconductor (CMOS) circuits. In this Comment, the authors discuss the recent developments, current challenges, and future outlook of 2D p-type transistors.

Films of aligned semiconducting carbon nanotubes could be used to build complementary metal–oxide–semiconductor field-effect transistors for digital integrated circuits and radio-frequency transistors for terahertz analogue integrated circuits. However, the operating frequencies of such devices remains too low for potential application in the sixth generation of wireless communications. Here we report metal–oxide–semiconductor field-effect transistors that are based on aligned carbon nanotube films and have a cut-off frequency beyond 1 THz. By optimizing gate structures and fabrication processes, we create devices with a gate length of 80 nm that have a carrier mobility of over 3,000 cm2 V−1 s−1, as well as an on-state current of 3.02 mA µm−1, a peak transconductance of 1.71 mS μm−1 at a bias of −1 V, and a saturation velocity of 3.5 × 107 cm s−1. By introducing a Y-shaped gate, we also create devices with gate lengths of 35 nm that have an extrinsic cut-off frequency (fT) of up to 551 GHz and a maximum oscillation frequency (fmax) of 1,024 GHz. Finally, we use devices with a gate length of 50 nm to fabricate mmWave-band (30 GHz) radio-frequency amplifiers that have a gain of up to 21.4 dB. By optimizing gate structures and fabrication processes, carbon nanotube metal–oxide–semiconductor field-effect transistors can be fabricated that exhibit a cut-off frequency beyond 1 THz.

Since Si-based Moore's law is physically limited, 2D semiconductors are proposed as successors to continue shrinking the transistor size for more Moore electronics. However, limited by experimental technology bottlenecks, the theoretical predicted superiorities of the 2D transistors over the state-of-the-art Si transistors have been lacking concrete evidence for a decade. In this review, recent exciting experimental breakthroughs for 2D transistors are presented, including gate length miniaturization to a sub-1 nm limit, electrode contact optimization to the resistance quantum limit, high-quality dielectric fabrication with an equivalent oxide thickness to sub-0.5 nm, novel architecture form (2D fin field-effect transistor), and back-end-of-line integration of directly grown 2D materials on Si complementary metal-oxide-semiconductor circuits. Remarkably, an ultrashort channel, Ohmic contact, ballistic transport, and ultrathin dielectric layer are simultaneously satisfied in the 2D InSe transistor, and device performances approaching the theoretical limit are observed. The measured key figures of merit of the ideal 2D InSe transistor are comparable to or even surpass those of the Si transistors. Finally, the challenges and outlook on more Moore electronics based on 2D transistors are highlighted. This article reviews recent breakthroughs in 2D transistor technology, including sub-nanometer gate length, ultra-low resistance contact, atomically thin dielectric, novel architecture form (2D fin field-effect transistor), and direct integration with Si complementary metal-oxide-semiconductor. The high-performance 2D InSe transistor approaches theoretical limit. The remaining challenges and exciting future prospects of 2D transistors for extending Moore's Law are also highlighted. image

Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.

The van der Waals systems could be used to overcome the issue of Fermi-level pinning in contacts of transistors based on two-dimensional semiconductors. However, the lack of advanced-node-lithography-compatible methods limits the use of such materials in wafer-scale integrated manufacturing. Here we report a yttrium-doping approach to convert semiconducting molybdenum disulfide (MoS2) into metallic MoS2. The approach, which is compatible with advanced-node wafer-scale integration, improves the band alignment and provides ohmic device contacts. It is based on a solid-state-source three-step doping method involving plasma, deposition and annealing, and can provide & aring;ngstr & ouml;m-thickness surface doping. The yttrium-doped MoS2 acts as a metallic buffer that improves charge carrier transfer from the metal electrode to semiconducting MoS2. With this approach, we fabricate self-aligned, 10-nm-channel-length MoS2 field-effect transistors on two-inch wafers with an average contact resistances of 69 Omega mu m and total resistances of 235 Omega mu m. Our devices exhibit an ON-current density of 1.22 mA mu m-1 at a drain voltage of 0.7 V, a ballistic ratio of 79% and a transconductance of 3.2 mS mu m-1. A yttrium-doped metallic two-dimensional buffer layer can be used to improve charge carrier transport between the metal contacts and semiconductor channel in molybdenum-disulfide-based transistors.

The growth of data-intensive computing tasks requires processing units with higher performance and energy efficiency, but these requirements are increasingly difficult to achieve with conventional semiconductor technology. One potential solution is to combine developments in devices with innovations in system architecture. Here we report a tensor processing unit (TPU) that is based on 3,000 carbon nanotube field-effect transistors and can perform energy-efficient convolution operations and matrix multiplication. The TPU is constructed with a systolic array architecture that allows parallel 2 bit integer multiply-accumulate operations. A five-layer convolutional neural network based on the TPU can perform MNIST image recognition with an accuracy of up to 88% for a power consumption of 295 mu W. We use an optimized nanotube fabrication process that offers a semiconductor purity of 99.9999% and ultraclean surfaces, leading to transistors with high on-current densities and uniformity. Using system-level simulations, we estimate that an 8 bit TPU made with nanotube transistors at a 180 nm technology node could reach a main frequency of 850 MHz and an energy efficiency of 1 tera-operations per second per watt. Carbon nanotube networks made with high purity and ultraclean interfaces can be used to make a tensor processing unit that contains 3,000 transistors in a systolic array architecture to improve energy efficiency in accelerating neural network tasks.

Previous studies have demonstrated that tetramethylpyrazine (TMP) can enhance the recovery of motor function in spinal cord injury (SCI) rats. However, the underlying mechanism involved in this therapeutic effect remains to be elucidated. We conducted RNA sequencing with a network pharmacology strategy to predict the targets and mechanism of TMP for SCI. The modified Allen's weight-drop method was used to construct an SCI rat model. The results indicated that the nuclear transfer factor-κB (NF-κB) pathway was identified through the Kyoto Encyclopedia of Genes and Genomes (KEGG) enrichment analysis, and an inflammatory response was identified through the Gene Ontology (GO) enrichment analysis. Tumor necrosis factor (TNF) was identified as a crucial target. Western blotting revealed that TMP decreased the protein expression of TNF superfamily receptor 1 (TNFR1), inhibitor κB-α (IκB-α), and NF-κB p65 in spinal cord tissues. Enzyme-linked immunosorbent assay (ELISA) and immunohistochemistry (IHC) demonstrated that TMP inhibited TNF-α, interleukin-1β (IL-1β), reactive oxygen species (ROS), and malondialdehyde (MDA) expression and enhanced superoxide dismutase (SOD) expression. Histopathological observation and behavior assessments showed that TMP improved morphology and motor function. In conclusion, TMP inhibits inflammatory response and oxidative stress, thereby exerting a neuroprotective effect that may be related to the regulation of the TNFR1/IκB-α/NF-κB p65 signaling pathway.

High thermal conductivity and ambipolar mobility are highly desirable for semiconductors in electronics and have been observed in bulk boron arsenide (BAs). In this work, we explore the scaling behavior of a monolayer hydrogenated BAs field-effect transistor (ML H-BAs FET) by employing ab initio quantum transport methods. Both the armchair- and zigzag-directed ML H-BAs FETs can well satisfy the requirements of the International Technology Roadmap for Semiconductors even if the gate length is scaled down to 2 similar to 3 nm for high-performance applications. The excellent nand p-type symmetry of bulk BAs is well preserved in the ML H-BAs FET along with the zigzag direction but is lost in the armchair direction. However, such asymmetry can be suppressed by applying uniaxial compressive strain owing to the broken valence band degeneracy. Our findings provide important theoretical insights into transport symmetry and the scaling behavior of ML H-BAs FETs.

Abstract The development of wireless communications is driving the need for compact radiofrequency (RF) devices with up to terahertz (THz) frequency and fabrication processes compatible with that of complementary-metal-oxide-semiconductor (CMOS) transistors. Aligned carbon nanotube (A-CNT) film is a promising candidate semiconductor that can be used to build both CMOS field-effect transistors (FETs) for digital integrated circuits (ICs) and radiofrequency (RF) transistors with frequencies beyond 1 THz for analogue ICs. Herein, we demonstrate the first MOS FET with a cut-off frequency beyond 1 THz on a high-quality A-CNT array film, and with a carrier mobility of 2,000 cm 2 V − 1 s − 1 and better scaling characteristics than all semiconductors, including GaAs and InP. The fabricated CNT MOS FETs present a record performance that includes an on-state current of 3.02 mA µm − 1 , a peak transconductance of 2.17 mS µm − 1 at a bias of − 1 V, and a saturation velocity of 3.5 × 10 7 cm s − 1 . Through optimising device structure and fabrication process, in particular the introduction of a Y-gate, a 35 nm-gate length A-CNT MOS FET is fabricated that shows extrinsic current-gain/power-gain and cut-off frequencies of up to 551 GHz/1024 GHz, representing the fastest MOS FET for RF applications. Furthermore, CNT-based mmWave band (30 GHz) RF amplifiers are demonstrated with a high gain of 21.4 dB.

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µ e than silicon but suffers from a much lower hole mobility µ h ( µ e / µ h = 80), thus unsuited to CMOS application with a single material. Through the accurate ab initio quantum‐transport simulations, the performance gap between the NMOS and PMOS is significantly narrowed is predicted and even vanished in the sub‐2‐nm‐diameter gate‐all‐around (GAA) InAs nanowires (NW) FETs because the inversion of the light and heavy hole bands occurs when the diameter is shorter than 3 nm. It is further proposed several feasible strategies for further improving the performance symmetry in the GAA InAs NWFETs. Short‐channel effects are effectively depressed in the symmetric n ‐ and p ‐type GAA InAs NWFETs till the gate length is scaled down to 2 nm according to the standards of the International Technology Roadmap for Semiconductors. Therefore, the ultrasmall GAA InAs NWFETs possess tremendous prospects in CMOS integrated circuits.