A WSe 2 /h-BN/Gr heterostructure local gate photodetector: synergistic modulation of local graphene gate voltages and optical signals enables reconfigurable logic operations, optical communication, and image recognition in one architecture.

Optoelectronic synapse devices hold enormous application prospects in neuromorphic machine vision but suffer from critical challenges including heteroepitaxial lattice mismatch and cumbersome fabrication processes. 4H-SiC offers distinct merits for high-performance neuromorphic devices due to its wide bandgap, high defect tolerance, and CMOS compatibility. Herein, we fabricated ultra-low-power photonic synapses based on MoS2/4H-SiC heterostructures, realizing faithful emulation of biological visual information processing. Under 405-nm illumination (5.05 mW · cm−2), the device exhibited amplified photoresponse with increasing light pulses: excitatory postsynaptic current change (ΔEPSC) rose progressively to saturation, mimicking biological reinforcement learning. It also achieved non-volatile long-term memory, with current remaining stable after light cessation. Pair-pulse facilitation (PPF) experiments showed a peak PPF index of 134.4

ABSTRACT Intense surface glare from the waxy cuticles of fruits frequently blinds conventional machine vision, causing severe data loss and target misidentification in unstructured agricultural environments. To address these limitations, a multifunctional optoelectronic neuromorphic transistor based on a MoS 2 /Ta 2 NiS 5 /MoSe 2 van der Waals heterojunction is demonstrated, enabling the seamless integration of photovoltaic sensing and synaptic functions within a single device. By leveraging rational band engineering and the strong intrinsic in‐plane anisotropy of Ta 2 NiS 5 , high‐performance polarization photodetection and bio‐inspired synaptic dynamics are synergistically coupled. The device yields a high responsivity of 0.48 A/W and a significant polarization ratio of 12 at 635 nm. Unlike conventional vision chips, this dual‐functional platform leverages polarization‐dependent synaptic plasticity driven by controllable charge trapping at atomic‐sharp interfaces to execute nonlinear hardware‐level feature encoding. This capability facilitates the construction of a polarization‐enhanced neuromorphic vision system that inherently suppresses specular reflections to enable robust, non‐destructive discrimination of agricultural products. A peak classification accuracy of 89.8% at a 0° polarization angle demonstrates that the integrated design of photovoltaic sensing and neuromorphic processing effectively reduces data redundancy and energy consumption. This dual‐mode anisotropic platform offers an efficient solution for intelligent vision in precision agriculture and complex target recognition.

The rapid advancements in optoelectronics and their widespread applications have spurred the development of high-performance photodetectors. This study presents a dual-van der Waals heterostructure photodetector, composed of WSe2, As0.6P0.4, and WS2. It demonstrates outstanding polarization-sensitive light detection without external bias, with a sensitivity of 487 mA/W, a detection capability of 6.09 × 1011 Jones, and an external quantum efficiency (EQE) of 95% at 635 nm, along with rise/fall times of 18-36 ms. The device also exhibits notable anisotropic polarization sensitivity (4.8 at 405 nm). With its broad spectral coverage (400-1100 nm), fast response, and high sensitivity, this photodetector shows significant promise for imaging applications. The development of anisotropic van der Waals heterojunctions provides a key reference for the design of high-performance, self-powered polarization photodetectors.

Polarimetric photodetectors hold significant promise in optical communication and polarization imaging applications due to their additional ability to detect polarization states of light. The strategy of multiple states modulation plays a crucial role in performance optimization and multi-valued logic output, enabling higher information transmission density and clearer polarization recognition. Following this context, a Ta2PdSe6/MoTe2 semimetal/semiconductor heterojunction-based polarimetric photodetector with multi-control states that can enable the multi-valued encoding communication and high-contrast polarization imaging applications is developed. As dual-electrically controlled states, the gate and bias voltages can significantly modulate the performance metrics. As a result, the device can be configured with tunable detectivity from 3.6 x 1010 to 2.19 x 1012 Jones and polarization ratios from 3.8 to 8.14 under 808 nm illumination. By further combining additional dual-optically control states (light intensity and polarization angle), the device achieves four logic states output, thus realizing multi-valued encoding optical communication with higher transmission efficiency and information density. Leveraging these four control states, a polarization imaging system capable of operating at different angles is also realized, with an enhanced degree of linear polarization from 0.51 to 0.8, allowing better differentiation of object features under different polarization states. This work demonstrates a polarimetric photodetector with multi-control states, showing promising potential in high-density communication and high-resolution imaging applications.

Flexible electronics that are stretchable or bendable have attracted increased attention in the field of wearable and portable electronics. Traditional bulk materials encounter challenges because of their rigid, brittle and opaque features, preventing their specific applications in bendable and flexible optoelectronics. In this study, we developed a flexible photodetector based on a NiPS3/MoTe2 heterostructure compatible with any substrate due to its mechanical flexibility and bonding-free surface. Because this heterostructure exhibits significant photovoltaic effects and polarization-sensitive detection capabilities, it becomes possible to transfer the device to a flexible substrate such as polyethylene terephthalate (PET) for imaging applications.Our photodetector exhibits rectification behaviour with a ratio of 2.52 x 102 and broadband photoresponse with a spectral range of 405-1310 nm. Due to the in-plane optical anisotropy of the NiPS3 component, our photodetector also exhibits significant polarization-dependent photocurrent with a maximum polarization ratio value of similar to 11.2. This study assembled an anisotropic NiPS3 into a van der Waals heterostructure, broadening the scope of NiPS3/MoTe2 heterostructure potential applications in flexible and polarised optoelectronics.

Polarization-sensitive photodetectors based on two-dimensional anisotropic materials still encounter the issues of narrow spectral coverage and low polarization sensitivity. To address these obstacles, anisotropic As0.6P0.4 with a narrow band gap has been integrated with WSe2 to construct a type-II heterostructure, realizing a high-performance polarization-sensitive photodetector with broad spectral range from 405 to 2200 nm. By operating in photovoltaic mode at zero bias, the device shows a very low dark current of ∼0.02 picoampere, high responsivity of 492 m A/W, and high photoswitching ratio of 6 × 104, yielding a high specific detectivity of 1.4 × 1012 Jones. The strong in-plane anisotropy of As0.6P0.4 endows the device with a capability of polarization-sensitive detection with a high polarization ratio of 6.85 under a bias voltage. As an image sensor and signal receiver, the device shows great potential in imaging and optical communication applications. This work develops an anisotropic vdW heterojunction to realize polarization-sensitive photodetectors with wide spectral coverage, fast response, and high sensitivity, providing a new candidate for potential applications of polarization-resolved electronics and photonics.

Anisotropy in crystal structure has provided a new degree of freedom to tune the physical and photoelectric properties of low-symmetrical materials, enabling the anisotropic band structure and polarization-resolved applications. Thus, the identification and control on the anisotropy is of great importance for the development of polarization-integrated devices. In this work, we introduce a promising two-dimensional (2D) dimetal chalcogenide Ta2NiSe5 with strong in-plane anisotropic structure and explore the effects of thickness, temperature and substrate on its in-plane anisotropy via an angle-resolved polarized Raman spectra. It is shown that the Raman mode softens with increasing temperature, revealing the anharmonic phonon properties of the Ta2NiSe5 flakes. We found that the anisotropy of phonon vibration is strongly related with the thickness, temperature and used substrate, which is more obvious at thinner samples, higher temperature and opaque silicon substrate compared to sapphire and suspended conditions. This work first reveals the influence factor on the anisotropy of phonon mode, which will guide the fundamental research of anisotropic physics and experimental design for the angle-resolved electronics.

Ferroelectric materials have demonstrated significant potential in the manipulation of optoelectronic processes in emerging device architectures. However, research exploring the synergy between ferroelectric materials and two-dimensional semiconductor materials, as well as direct modulation of the interface band alignment of two-dimensional semiconductor materials in heterostructures, remains limited. Here, we report a ferroelectric photodetector composed of a CuInP2S6 gate, an h-BN dielectric layer, and a MoTe2 channel. Due to the presence of directional ferroelectric spontaneous polarization charges under an applied electric field, the interface band structure is effectively modulated, greatly enhancing the generation, separation, and transport efficiency of photo-generated electron-hole pairs. Compared to non-ferroelectric back-gated modulation (Si), the photocurrent is boosted by an order of magnitude under top-gate modulation, while the dark current is effectively suppressed. The ferroelectric photodetector exhibits a high responsivity modulation of 6.07 A W-1 and a high detection rate of 5.67 x 1011 jones. Interestingly, clockwise hysteresis is observed under both single top-gate (VTG) and silicon dioxide back-gate (VBG) modulation, attributed to the charge dynamics at the interface and gate coupling effects. This work reveals the substantial potential of the detector for high-performance optical sensing through the modulation of the interface band structure of semiconductor junctions by two-dimensional ferroelectric materials.

The emergence of cutting-edge technology has spurred an urgent demand for highly efficient photodetectors, due to their crucial applications in surveillance, thermal imaging, optical communication and environmental monitoring. Yet, the simultaneous optimization of photodetector parameters including miniaturization, high quantum efficiency, and heterogenous functionality remains a challenging task. In this study, we address these limitations by leveraging the anisotropic properties of Ta2NiSe5 materials for polarization-sensitive photodetection and selecting suitable two-dimensional (2D) materials to enhance the performance. We present a dual van der Waals heterojunction comprising top/bottom MoTe2 and middle Ta2NiSe5 layers. Thanks to the augmented light collection efficiency and two opposing built-in electric fields at the dual heterojunction interfaces, our device demonstrates not only a broad spectral response ranging from 400 to 1550 nm, but also impressive performance parameters including an external quantum efficiency of 82.9%, and a rapid response speed of 3.5/4.2 mu s, which has a substantial improvement over the single junction device. Leveraging the robust in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the double heterojunction device displays competitive polarization sensitivity with polarization ratio values of 16.3 and 8.1 under 635 and 1550 nm, respectively. This work provides a promising platform for the development of high-performce and multifunctional photodetectors, thereby pioneering new directions for advanced optoelectronic device design and applications.

Polarization-sensitive infrared photodetectors have vast application prospects in imaging systems and polarization sensors due to the addition of new detection dimensions beyond wavelength and intensity. However, most polarization-sensitive photodetectors are operated in the visible wavelength range and still encounter challenges of limited responsivity (R) and polarization ratio (PR) under short-wave infrared illumination. To address these issues, a vertical heterostructure of beta-In2Se3-on-Te is reported, achieving high-performance and polarization-sensitive imaging sensors in the short-wave infrared (SWIR) region. The high R (2 A/W at 13(10) nm and 0.71 A/W at 1550 nm) and specific detectivity (2.14 x 109 Jones at 1310 nm and 7.3 x 10(8) at 1550 nm) are obtained, which surpasses most photodetectors using anisotropic 2D material in the infrared range. Considering the strong anisotropic nature of Te nanosheets, the device exhibits notable polarization sensitivity with a PR value of 4.95 under 1310 nm laser irradiation. This work proposes a multifunctional photodetector for the great applications of ASCII code transmission and polarization-sensitive infrared imaging, offering a new opportunity for versatile angle-resolved optoelectronics in the infrared communication band.

The sensitive detection of light polarization besides the intensity and wavelength, can provide a new degree of freedom for more and clearer information of imaging targets in night, fog, and smoke environment. However, the conventional filter‐integrated polarimetric photodetectors suffer from the complicated fabrication process and limited spectral range. Herein, broadband and polarization‐sensitive photodetectors are achieved with reconfigurable operation mode, utilizing the linear dichroism and narrow band gap of 2D As 0.4 P 0.6 with in‐plane anisotropic structure. In As 0.4 P 0.6 ‐MoTe 2 heterojunction device, both photo‐gating and photovoltaic modes are operated and switchable, contributing to high responsivity (1590 A W −1 at 405 nm and 14.7 A W −1 at 1550 nm) and ultrafast speed (25 µs) in the wide spectral band (405–1550 nm). Interestingly, an optical reversal is observed on both linear dichroism and polarimetric photocurrent due to the wavelength‐dependent polarization reverse nature of the As 0.4 P 0.6 flakes. The dichroism ratio of photocurrent can be modulated from unity to ≈10 by varying the gate voltage, enabling the reconfigurable detection mode from polarization‐independence to polarization‐susceptibility. This study demonstrates a new prototype device comprising low symmetric van der Waals heterostructure, possessing the gate‐tunability on both photo‐gain and dichroism ratio, toward high performance, reconfigurable, broadband, and polarization‐resolved photodetection and imaging applications.

Atomically thin two-dimensional (2D) materials make it possible to create a variety of van der Waals (vdW) heterostructures with different physical features and attributes, which enables the growth of innovative electronics and optoelectronics applications. The band alignment and charge transfer play a crucial role in the physical and optoelectrical properties of the vdW heterostructure. Here, we design a vdW heterojunction device comprising low-symmetric CrOCl to induce a stable anti-ambipolar behavior and polarization-sensitive photodetection performance. 2D CrOCl exhibits strong in-plane anisotropy and linear dichroism, and an anti-ambipolar transport behavior is observed in a MoTe2 channel due to the gate-tunable band bending and charge transfer at MoTe2/CrOCl interface. The devices also exhibit well photodetection performance with a responsivity of 1.05 A/W and a temporal response of 970 μs. Owing to the anisotropic CrOCl serving as a photosensitizing layer, the device achieves the capability of polarization-sensitive photodetection with a photocurrent dichroic ratio up to ∼6. This work offers a valid device model and design strategy to realize the versatile optoelectronics, including the anti-ambipolar transistor and polarimetric photodetectors.

Oblique laser shock processing (OLSP) can provide a new solution for improving the mechanical properties of complex structural elements. In this paper, a spatial distribution model of OLSP shock wave pressure is established and validated to study the residual stress (RS) field and surface morphology of titanium alloy TC6 treated by OLSP using the finite element method. The effects of the incident angle, overlapping rate, and scanning pattern on the RS field and surface morphology were investigated. The OLSP results indicate that the overlapping rate should be at least 50%. The RS field and surface morphology obtained with the interval scanning pattern are more uniform compared to snake and spiral. With a 50% overlapping rate and interval scanning pattern, the surface roughness was found to be 0.16, and the surface residual compressive stress fluctuation amplitude was reduced by 40.07%. The results provide a theoretical basis for complex structures of LSP.

In the applications of low-power device design and large-scale integrated circuit, MOSFETs play an important role but suffer from the doping complexity and short channel effect when the technology node is further shrinking. Thus, it is of great interest to develop new transistor architecture with atomically thin channel materials to meet the demand for high-density integration and low-power consumption electronics. Here, we develop a dual-junctions field-effect transistor (DJFET) consisting of van der Waals MoS2/Te/MoS2 heterojunctions where the MoS2 on top and bottom serves as dual-gate and the tellurium (Te) in middle is the carrier transport channel. The novel transistor exhibits superior transfer and output characteristics with p-type behavior, high mobility of 270.3 cm $^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ and large transconductance of $16.4~\mu \text{S}$ , competing with widely-reported MOSFETs based on 2-D semiconductors. Additionally, the devices can be operated as a self-driven photodetector with a high responsivity of 879.2 mAW $^{-{1}}$ and a specific detectivity of $3.47\times 10^{{11}}$ Jones. This work proposes a new dual-junctions transistor as a highly desirable candidate for next-generation electronic applications.

Polarization-sensitive photodetectors in the infrared range have attracted considerable attention because of their unique and wide application prospects in polarization sensors and remote sensing. However, it is challenging to achieve short-wave infrared polarization detection as most polarization-sensitive photodetectors are based on transition-metal dichalcogenide (TMD) materials with in-plane symmetric crystal structure and sizable band gap (1-2 eV). In this work, we design a type-II GeAs/WS2 heterojunction realizing superior self-driven polarization-sensitive photodetection in the short-wave infrared region. The device shows obvious rectifying behavior with a rectification ratio of 1.5 × 104 in the dark and excellent photoresponse characteristics in a broad spectral range. Accordingly, the high responsivity of 509 mA/W, large on/off ratio of 103, a high EQE of 99.8%, and a high specific detectivity of 1.08 × 1012 Jones are obtained under 635 nm laser irradiation. Taking advantage of the narrow band gap of GeAs with an anisotropic structure, the detection spectral coverage can be extended from the visible to the short-wave infrared range (635-1550 nm). Further, the GeAs/WS2 heterojunction shows high polarization sensitivity with an anisotropic photocurrent ratio of 4.5 and 3.1 at zero bias under 1310 and 1550 nm laser irradiation, respectively, which is much higher than that of reported polarization-sensitive photodetectors in the infrared region. This work provides an effective route using low-symmetry 2D materials with narrow band gap and anisotropic structure to design van der Waals (vdW) heterojunctions, realizing multifunctional optoelectronics for rectifying, photovoltaics, and polarization-sensitive photodetectors with spectral coverage up to 1550 nm.

目的 检测老年癫痫患者急性发作后血浆外泌体中长链非编码RNA(LncRNA)MIR155HG表达水平,并探讨其对老年患者预后的意义.方法 159例老年癫痫患者,根据随访期间是否发生预后不良将患者分为预后不良组和预后良好组.采用实时荧光定量-聚合酶链反应(qRT-PCR)检测患者血浆外泌体中LncRNA MIR155HG表达水平;分析预后不良组老年癫痫患者血浆外泌体LncRNA MIR155HG与血浆细胞因子水平相关性;分析血浆外泌体LncRNA MIR155HG水平对老年癫痫患者预后不良的预测价值;分析影响老年癫痫患者预后不良的因素.结果 预后不良组血浆外泌体LncRNA MIR155HG及血浆白细胞介素(IL)-2、IL-6、IL-8、IL-1β、肿瘤坏死因子(TNF)-α水平显著高于预后良好组(P<0.05);预后不良组老年癫痫患者血浆外泌体LncRNA MIR155HG与血浆IL-2、IL-6、IL-8、IL-1β、TNF-α 水平呈正相关(P<0.05);血浆外泌体LncRNA MIR155HG水平预测老年癫痫患者预后不良的曲线下面积(AUC)为0.852,截断值为1.171,特异性为79.5％,敏感度为85.5％;LncRNA MIR155HG、TNF-α是影响老年癫痫患者预后不良的独立危险因素.结论 老年癫痫患者血浆外泌体Ln-cRNA MIR155HG水平的变化与病情发展及预后密切相关.

Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) has attracted increasing attention due to its high mobility, tunable band gap, and air stability. The surface reconstruction of cleaved Bi2O2Se due to the electrostatic interlayer interactions can lead to the in-plane anisotropic structure and physics. In this work, we first discovered the strong anisotropy in phonon modes through the angle-resolved polarized Raman (ARPR) spectra. Benefiting from the anisotropic feature, a high-performance polarization-sensitive photodetector has been achieved by constructing a heterostructure composed of the multilayer Bi2O2Se as polarized-light sensitizers and 2D WSe2 as a photocarrier transport channel. The detectors exhibit broadband response spectra from 405 to 1064 nm along with high responsivity, fast speed, and high sensitivity owing to the photogating effect in this device architecture. More importantly, the photocurrent shows strong light polarization dependence with the maximum dichroism ratio of 4.9, and a reversal is observed for the angle-dependent photocurrent excited by polarized 405 and 635 nm light. This work provides new insight in terms of optical and photocurrent anisotropy of exfoliated Bi2O2Se and expands its applications in angle-resolved electronics and optoelectronics.

目的 探讨环状RNA小脑变性相关蛋白1反义转录物(CDR1as)与微小RNA-7(miR-7)在癫痫患者血浆中的表达及与脑电图异常的关系.方法 选取2016年12月—2019年12月在新乡医学院第二附属医院门诊及住院的癫痫患者87例为观察组,并根据脑电图结果分为正常组(6例)、轻度异常组(18例)、中度异常组(37例)及重度异常组(26例);选取同期健康体检者90例为对照组.实时荧光定量PCR(qPCR)法检测血浆CDR1as、miR-7水平,酶联免疫吸附测定(ELISA)法检测血浆白细胞介素(IL)-2、肿瘤坏死因子(TNF)-α和IL-1β水平;Pearson法分析癫痫患者血浆CDR1as、miR-7水平与IL-2、TNF-α和IL-1β水平的相关性.结果 对照组、正常组、轻度异常组、中度异常组、重度异常组血浆CDR1as、IL-2、TNF-α和IL-1β水平总体呈升高变化,miR-7水平总体呈降低变化,差异均有统计学意义(P<0.05).癫痫患者血浆CDR1as水平与IL-2、TNF-α和IL-1β水平呈正相关(P<0.05),miR-7水平与IL-2、TNF-α和IL-1β水平呈负相关(P<0.05).结论 CDR1as、miR-7在癫痫患者血浆中分别呈高表达、低表达,与炎症因子水平、脑电图异常程度密切相关,可能通过影响炎症反应引起脑部异常放电.

Objective To study and analyze the relation between cognitive impairment and apolipoprotein E(ApoE) gene polymorphism in post-stroke depression patients(PSD).Methods The patients were divided into PSD group(83 cases) and brain stroke group(96 cases) by using the 24-item Hamilton Depression Rating Scale (HAMD-24),and healthy volunteers were selected as a control group(53 cases).Cognitive function was evaluated by using the event-related potential (ERP) P300 and single nucleotide polymorphisms of ApoE exon 4 of 112 (rs429358) and 158 (rs7412) were determined by using gene sequencing method.Results 1.Compared with the brain stroke group and the control group,latency in ERP including N2 and P3 of PSD group was significantly prolonged (P＜ 0.05 ),while the amplitude of P3 in PSD was significantly lower(P＜ 0.05 ).2.e3/ε4 genotype frequency in PSD group(24 cases) was significantly higher than that in the control group(7 cases) (P＜0.05).The e4/4 genotype fiequency in PSD group (8 cases) was significantly higher than that in brain stroke group (2 cases) (P ＜ 0.05 ).The e4 allele rate in PSD group ( 24.7％ ) was significantly higher than that in both brain stroke group (16.1％) and contro] group(9.4％ ) (all P＜0.05).3.The PSD patients with ε4 allele had significantly higher score of HAMD-24 and prolonged latency of N2 and P3 than those without e4 allele (P ＜ 0.05 ).Conclusion There is cognitive impairment in PSD patients.The ApoE ε4 allele may associate with the cognitive impairment and depression in PSD patients.