— The need for radiation monitoring at coal-mining facilities with the aim of detecting high ionization of gas−dust mixture in the air of mines is demonstrated. An assessment of mining sites by surface dosimetry is proposed in order to identify potential gas leaks in dissintegrating massifs (faults and changes in rock permeability during works). Example applications of surface dosimetry are provided.

A study is performed of the optical and physical properties of oxide materials and aluminum nitride that allow targeted approaches to developing criteria for estimating the dosimetry potential of materials. It is proposed that mass-produced oxide thermoluminescent detectors and ceramic materials based on AlN and Al2O3 be used in the dosimetry of weakly penetrating radiation of high intensity.

Обосновано использование термолюминесцентных детекторов ионизирующего излучения ТЛД-К, изготавливаемых из аморфного материала на основе стекла, для контроля излучений высокой плотности и интенсивности, т.е. до доз 1 кГр по рабочему дозиметрическому пику, при мощностях дозы до 1011 Гр/с.

The problem of counterfeit products, electronic and electromechanical products is presented. One of the most effective non-destructive electronics analyses is x-ray checking, that is presented in this paper.

The luminescence characteristics of commercial ceramic substrates based on AlN and Al2O3 have been investigated. Based on the results, it is possible to determine the conditions under which these materials can be used in ionizing-radiation dosimetry. The TLD-K and TLD-500 thermoluminescent detectors are used for comparison.

The study demonstrates use of TLD-K thermoluminescent detectors of ionizing radiation, which are made of a glass-based amorphous material, to measure high-density and high-intensity radiation, i.e., to doses of up to 1 kGy in the operating dosimetric peak at dose rates of up to 10(11) Gy/s.

A methodical approach for the identification of a plant and characterization of integrated circuit technology based on an analysis of the features of a radiation response is proposed.

This work presents a solution for radiation hardness grading procedure using compact X-ray facility built in probe station, with automated measurement system based on NI PXI platform. The radiation grading procedure can be integrated as additional stage to provide rad-hard option of conventional process. Using the radiation grading procedure as a stage of IC fabrication process, the total ionizing dose (TID) hardness capability was estimated for commercial 65-nm CMOS test structures.

The article is devoted to an automated system for parameters monitoring of the input and output chains of the logic ICs in order to identify its manufacturer. The system based on National Instruments PXI platform. The hardware and software parts of the system, as well as the measurement process and results threat, are observed.

This work presents a solution for radiation hardness assessment using compact and productive X-ray facilities, as well as,the automated measurement system. The radiation test procedure can be integrated in commercial IC's process as a mandatory option for providing high reliability and radiation hardened IC projects. Using the radiation test procedure as a one of technology stage, the assessment of total ionizing dose (TID) hardness was done for test structures, which were fabricated in conventional 65 nm CMOS technology. (C) 2016 Published by Elsevier Ltd.

Представлены результаты имитационных исследований радиационных эффектов в БиКМОП БИС интерфейсного приемопередатчика последовательных данных 5559ИН2Т. Установлено, что исследованные БИС являются достаточно радиационностойкими: сохраняют основные параметры в пределах ТУ при воздействии эквивалентной мощности дозы импульсного ионизирующего излучения до Р=1?109 ед/с, а также дозы стационарного ионизирующего излучения до D=2.4?105 ед и функционируют до Р=2?1010 ед/с при температурах окружающей среды от –60 до +125°С. Рассмотрены физические механизмы, объясняющие полученные закономерности. Полученные аналитические зависимости тока потребления БИС от дозы облучения в виде полинома второй степени могут быть использованы для прогнозирования устойчивости БиКМОП БИС к воздействию стационарного ионизирующего излучения.

The results are presented of a radiation-effect simulation in the 5559IN2T serial-data BiCMOS LSI interface transceiver. The circuit is found to have a fairly high level of radiation hardness: the performance parameters considered remain within the tolerance limits at equivalent dose rates of pulsed radiation up to P = 1 × 109 unit/s and at equivalent doses of steady-state radiation up to D = 2.4 × 105 units, and the circuit can operate at equivalent dose rates up to P = 2 × 1010 unit/s over the temperature range −60 to +125°C. The physical mechanisms underlying the observed behavior are discussed. Analytical formulas are derived that represent the dose dependence of transceiver consumption current as a quadratic polynomial. They could be used to predict the resistance of the circuit to steady-state ionizing radiation.

The dependence of p-i-n diode ionizing current amplitude vs 1.06 mum pulsed laser irradiation intensity is investigated. It is shown that the analyzed dependence becomes nonlinear beginning with relatively low laser intensities near 10 W/cm(2).

Transient and steady-state radiation response of a single-chip pressure sensor is investigated in (1...6) atm pressure range. The independence of radiation behavior on the applied pressure was observed. The sensor sensitivity variation is less than 0.01 % for total dose up to 3 Mrd. A model for dose rate effects is developed.

The dependence of p-i-n diode ionizing current amplitude vs dose rate is defined using two-dimensional software simulation. It is shown that analyzed dependence becomes nonlinear beginning with relatively low dose rates near 10(7) rad(Si)/s. This effect is connected with the modulation of p-in diode intrinsic region by irradiation. As a result the distribution of electric field becomes non-uniform that leads to decrease of excess carriers collection. The ionizing current pulse form becomes more prolonged because of delayed component contribution. It is necessary to take into account when p-i-n diode is used as dose rate dosimeter.

A device for independent recording of the low-intensity alpha-, beta-, and gamma-radiation in mixed fields is described. The particles are identified by analyzing the time responce of the photon flash in a CsI(Tl) scintillator. Design and main performance characteristics of the device are provided.

The integrating ADC CMOS IC radiation hardness tests were performed. Dose rate, total dose and structural damage test techniques and results are presented and analyzed. It was found that low radiation hardness is inherent to an integrating ADC due to its operation principles.