Electromigration and resistivity of Cu, Co and Ru- on chip interconnections have been investigated. Non-linered Co and Ru interconnects can have better interconnect resistance than Cu, if the Cu liner cannot be scaled down below 2 nm in future interconnect technologies. A similar resistivity size effect increase was observed in Cu, Co, and Ru. Multi-level Cu, Co or Ru back-end-of-line interconnects were fabricated using 7 and 10 nm node technology wafer processing steps. EM in 18 nm to 88 nm wide Co lines, 18-24 nm wide Cu with a thin Co cap and 18 to 24 nm wide Ru lines were tested. The electromigration activation energies for Cu with Co cap, Co and Ru were found to be 1.5-1.7 eV, 2.4-3.1 eV and 1.9 eV, respectively. These data showed that Cu with Co cap, Co and Ru interconnects all had highly reliable electromigration.

Mechanisms of electromigration (EM) damage in Cu interconnects through various CMOS nodes are reviewed. Pure Cu and Cu alloy interconnects that were used down to 14 nm node can no longer satisfy the electrical current used for 10 nm node and beyond in high-performance ICs. Cu interconnects with a metal cap should be used. Cu interface diffusivity with EM activation energy of 1.6 eV was found to be the dominate EM factor in Cu lines with a Co liner and cap. The median lifetime of 7 or 10 nm node Cu with TaN/Co liner and Co cap is predicted to be over ten thousand years at 140°C with 1.5×10 7 A/cm 2 . However, the resistivity size effect and the difficulty of scaling barrier/liner layer without defects can limit the Cu BEOL roadmap below the 7 nm node.

Material interaction during integration of tungsten gate stack for 1 Gb DRAM was investigated by Transition Electron Microscopy (TEM), X-ray Diffraction analysis (XRD) and Auger Electron Spectroscopy (AES). During selective side-wall oxidation tungsten gate conductor undergoes a structural transformation. The transformation results in the reduction of tungsten crystal lattice spacing, re-crystallization of tungsten and/or growth of grains. During a highly selective oxidation process, a relatively small but noticeable amount of oxygen was incorporated into the tungsten layer. The incorporation of oxygen is attributed to the formation of a stable WOx (x<2) composite.

Team development and leadership remain important roles for Extension. This article demonstrates how Tuckman's model for small group development can be used to examine the evolution of teams retrospectively for the purpose of improving future practice. Our experience leading Nevada's Nutrition Network serves as the example. Critical points in the evolution of this team are identified and alternative actions are cited.

The authors present a 65nm embedded DRAM cell (0.127 μm2 cell size) on unpatterned SOI fabricated using standard high performance SOI technology with dual stress liner (DSL). The cell utilizes a low-leakage 2.2-nm gate oxide pass transistor and a deep trench capacitor. A trench side wall spacer process enables a simplified collarless process. Connection to the buried plate is realized by silicided substrate guardrings with fully landed tungsten contacts. The bitline structure and the deep trench capacitor are designed for high transfer ratio and low RC constant which ensure high performance and sufficient sensing signal. The pass transistor is strain engineered to boost on current and employs optimized S/D junctions to help attain sub-pA off current. This technology has produced fully-functional 2Mb prototype embedded macros with sub-1.5ns latency and sub-2ns random cycle times for on-processor caches. The low leakage device developed also enables for the first time a low standby power SOI technology

We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.

A novel structure and technology has been developed for high performance CMOS using hybrid silicon substrates with different crystal orientations (namely pFET on [110]-oriented surface and nFET on (100) surface) through wafer bonding and selective epitaxy. CMOS devices with physical gate oxide thickness of 1.2 nm have been demonstrated, with substantial enhancement of pFET drive current at L/sub poly//spl les/80 nm.

A planar self-aligned double-gate MOSFET process has been implemented where a unique sidewall source/drain structure (S/D) permits self-aligned patterning of the back-gate layer after the S/D structure is in place. This allows coupling the silicon thickness control inherent in a planar, unpatterned layer with VLSI self-alignment techniques and also gives independently controlled front and back gates. The demanding structure led to process innovations primarily in front-end CMP, where planarity within 5 nm was achieved on an 8-in diameter wafer as well as in silicided silicon source/drain sidewalls, with minimal encroachment of the silicide. Double-gate FET (DGFET) operation is demonstrated, with good transport at both interfaces. Dense circuit layouts are achieved with multifinger devices, and logic inverters with back-gate-controlled load current as well as NOR logic using the two gates of a single transistor as inputs are demonstrated.

Thin-body fully depleted silicon on insulator (FDSOI) devices with NiSi metal gates were fabricated with gate lengths down to 20nm. Specific issues in-the integration of the NiSi-gated FDSOI devices were investigated, in particular: gate CMP, the phase stability of the nickel silicide, and parasitic resistance.

Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive I/sub on//I/sub off/, and adjustable V/sub t/. Six silicide gate materials are presented, as well as two silicide workfunction engineering methods.

In the present work we describe a concept for the fabrication of a 10 nm MOSFET. The combination of an epitaxial silicon structure based on SOI with an anisotropic etch allows the definition of ultra-short channel devices. By cutting through a highly doped n++ layer on top of an undoped channel layer using a KOH-etch, source and drain as well as the channel itself are defined in one step. Since the etch produces a V-like groove, an extremely small source/drain separation — defined by the tip region of the V — can be obtained. We claim that even standard optical lithography can be used in principle to generate channels of around 10 nm length. Measured output characteristics on first prototypes indicate the possibility of using the proposed concept to generate functioning MOSFETs with acceptable short-channel effects.

Team Nutrition is a United States Department of Agriculture initiative designed to improve the health and education of children by creating innovative public and private partnerships that promote food choices for a healthful diet through media, schools, families, and communities. The goals of Team Nutrition are to: 1) expand the variety of foods children have in their diet; 2) add more fruits, vegetables, and grains to the foods children already eat; and 3) assist children in constructing a diet lower in fat. Dietetic professionals can play a unique role in promoting Team Nutrition goals in schools because they understand the importance of healthy eating habits among children and have the skills and ability to convey the importance of good nutrition to others. Nevada's “Team Nutrition Partners” program was created to facilitate their involvement in schools. The goal of the program is to enhance the school environment by promoting the consumption of healthful foods and increasing access to nutrition education. Dietetic professionals were recruited and trained to serve as volunteers within schools. These volunteers (n-17) conducted environmental scans at participating elementary and middle schools (n-18) to identify potential changes regarding nutrition that would result in long-term improvements in the school environment. Results were discussed with school principals and an action plan was agreed upon. Implementation of plans have resulted in many positive impacts: established a new school breakfast program; educated parents on good nutrition through the parent/teacher association and school newsletters; conducted nutrition workshops for teachers; worked with teachers and parents on healthy alternatives for school fundraisers; and located nutrition education resources for teachers.

This paper reports on our studies of dislocation formation in trench capacitor DRAM structures. Experimental results on process dependence and layout dependence of dislocation formation in cell layouts with minimum feature sizes from 0.5 µm to 0.25 µm are compared to two-dimensional stress simulations. It is shown that the nucleation and spatial distribution of dislocations can be explained by considering stress fields which are influenced by the overlay of deep trench and shallow trench isolation structures.

Annals of the New York Academy of SciencesVolume 498, Issue 1 p. 530-533 Supplementation of Vitamins C and E and Cellular Immune Function in Young and Aging Mena RONALD ROSS WATSON, RONALD ROSS WATSON Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorJ. BENEDICT, J. BENEDICT Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorJ. C. MAYBERRY, J. C. MAYBERRY Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorM. J. HICKS, M. J. HICKS Department of Pathology University of Arizona Tucson, Arizona 85724Search for more papers by this authorS. MORIGUCHI, S. MORIGUCHI Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724 Department of Nutrition, Tokushima University, Tokushima, Japan 770.Search for more papers by this author RONALD ROSS WATSON, RONALD ROSS WATSON Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorJ. BENEDICT, J. BENEDICT Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorJ. C. MAYBERRY, J. C. MAYBERRY Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724Search for more papers by this authorM. J. HICKS, M. J. HICKS Department of Pathology University of Arizona Tucson, Arizona 85724Search for more papers by this authorS. MORIGUCHI, S. MORIGUCHI Department of Family and Community Medicine University of Arizona Tucson, Arizona 85724 Department of Nutrition, Tokushima University, Tokushima, Japan 770.Search for more papers by this author First published: July 1987 https://doi.org/10.1111/j.1749-6632.1987.tb23804.xCitations: 1 a This work was supported by a grant from Hoffman-LaRoche, Inc. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume498, Issue1Third Conference on Vitamin CJuly 1987Pages 530-533 RelatedInformation