In the published version of this paper, there is an error in the indexing of the fcc diffraction pattern in Fig. 5c. The corrected figure is shown below.

The magnetic alloy of nominal composition, Fe73.5Si13.5B9Nb3Cu1, has been successfully processed using the laser engineered net shaping (LENS™) process, from a feedstock of elemental powders. The microstructure consists of dendritic α-Fe3Si grains, with B and Nb partitioning to the inter-dendritic regions, resulting in the formation of Fe3B grains. Additionally, Fe23B6 grains are visible at the α-Fe3Si/Fe3B interface. The scale of this microstructure can be varied via the laser deposition parameters and this, in turn, influences coercivity (Hc) and saturation magnetization (Ms) of these laser-deposited magnetic alloys. This work shows the feasibility of creating novel geometries of magnetic materials by the laser engineered net shaping process.

Several recent papers report spectacular, and unexpected, order of magnitude improvement in creep life of alloys upon adding small amounts of elements like zinc. This microalloying effect raises fundamental questions regarding creep deformation mechanisms. Here, using atomic-scale characterization and first principles calculations, we attribute the 600% increase in creep life in a prototypical Mg–rare earth (RE)–Zn alloy to multiple mechanisms caused by RE–Zn bonding—stabilization of a large volume fraction of strengthening precipitates on slip planes, increase in vacancy diffusion barrier, reduction in activated cross-slip, and enhancement of covalent character and bond strength around Zn solutes along the c -axis of Mg. We report that increased vacancy diffusion barrier, which correlates with the observed 25% increase in interplanar bond stiffness, primarily enhances the high-temperature creep life. Thus, we demonstrate that an approach of local, randomized tailoring of bond stiffness via microalloying enhances creep performance of alloys.

The atomic distribution in catalytically active metallic glass alloys, Pd43Cu27Ni10P20 and Pt57.5Cu14.7Ni5.3P22.5, was investigated using three-dimensional atom probe microscopy. Atom probe analysis showed uniform distribution of constituent elements for both the starting amorphous alloys, with no phase separation. Both the crystallized alloys showed eutectic microstructure with a very sharp interface (~0.5 nm as determined from atom probe). The atomic distribution in the devitrified state is explained based on the “fragile liquid” behavior for these noble-metal glassy alloys.

Evolution of atomic distribution during devitrification of a zirconium-based bulk metallic glass, Zr41.2Ti13.8Cu12.5Ni10.0Be22.5, was investigated using three-dimensional atom probe microscopy. Atom probe analysis showed uniform distribution of constituent elements for the as-cast alloy, with no phase separation. The metallic glass was annealed at different temperatures to study the crystallization pathways and the length scale, distribution, and morphology of the phases formed. Devitrification was found to proceed via the formation of a metastable icosahedral phase. The devitrification pathway is explained based on “strong-liquid” behavior of this alloy.

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10 19 to 10 20 cm −3 ) low-resistivity (10 −4 Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography and density functional theory.

This chapter contains sections titled: Introduction Experimental Details Results and Discussion Summary Acknowledgements

Addition of Zn to Mg-Nd-La alloys resulted in an order of magnitude drop in the minimum creep rate. This remarkable improvement in creep resistance resulted from a high number density of highly refined gamma" precipitates within the alpha-Mg matrix coupled with preferential segregation of Zn atoms to defect/dislocation structures. These two microstructural features are expected to enhance the creep resistance by retarding dislocation motion within the alpha-Mg matrix. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the masks being used in order to maintain exquisite control over both feature size and feature density. Here, the authors demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top–down atomic control over nanofabrication. First, hydrogen depassivation lithography is performed on hydrogen terminated Si(100) using a scanning tunneling microscope, which spatially defined chemically reactive regions. Next, atomic layer deposition of titanium dioxide produces an etch-resistant hard mask pattern on these regions. Reactive ion etching then transfers the mask pattern onto Si with pattern height of 17 nm, critical dimension of approximately 6 nm, and full-pitch down to 13 nm. The effects of linewidth, template atomic defect density, and line-edge roughness are examined in the context of controlling fabrication with arbitrary feature control, suggesting a possible critical dimension down to 2 nm on 10 nm tall features. A metrology standard is demonstrated, where the atomically resolved mask template is used to determine the size of a nanofabricated sample showing a route to image correction.

Silver tantalate coatings were produced by reactive unbalanced magnetron sputtering from silver and tantalum sources as potential high temperature solid lubricants. The films were wear-tested at 750°C under normal loads of 1, 2, 5, or 10N against a Si3N4 counterface. These sliding tests revealed that the friction monotonically increased as the load was increased. A systematic investigation of the surface and sub-surface regions of the wear track, using techniques such as Scanning Auger Nanoprobe, Atom Probe Tomography, and cross-sectional transmission electron microscopy, revealed the following trends with increasing load: (1) a decrease in the amount of Ag on the surface of the wear track; (2) a decrease in the thickness of the mechanically mixed layer that forms as a result of the reconstruction of AgTaO3 to form Ta2O5 and Ag; and (3) the formation of a porous structure throughout the tribofilm as a result of the segregation and migration of Ag from the original AgTaO3 matrix. These results were complemented by molecular dynamics simulations, which confirmed the increase of friction with load. Further, the simulations support the hypothesis that this trend can be explained in terms of decreased presence of Ag clusters near the sliding surface and the associated decreased porosity.

Low resistivity, near-surface doping in silicon represents a formidable challenge for both the microelectronics industry and future quantum electronic devices. Here we employ an ultra-high vacuum strategy to create highly abrupt doping profiles in silicon, which we characterize in situ using a four point probe scanning tunnelling microscope. Using a small molecule gaseous dopant source (PH3) which densely packs on a reconstructed silicon surface, followed by encapsulation in epitaxial silicon, we form highly conductive dopant sheets with subnanometer control of the depth profiles. This approach allows us to test the limits of ultra-shallow junction formation, with room temperature resistivities of 780 Ω/□ at an encapsulation depth of 4.3 nm, increasing to 23 kΩ/□ at an encapsulation depth of only 0.5 nm. We show that this depth-dependent resistivity can be accounted for by a combination of dopant segregation and surface scattering.

Fabrication of ultrasharp probes is of interest for many applications, including scanning probe microscopy and electron-stimulated patterning of surfaces. These techniques require reproducible ultrasharp metallic tips, yet the efficient and reproducible fabrication of these consumable items has remained an elusive goal. Here we describe a novel biased-probe field-directed sputter sharpening technique applicable to conductive materials, which produces nanometer and sub-nanometer sharp W, Pt-Ir and W-HfB(2) tips able to perform atomic-scale lithography on Si. Compared with traditional probes fabricated by etching or conventional sputter erosion, field-directed sputter sharpened probes have smaller radii and produce lithographic patterns 18-26% sharper with atomic-scale lithographic fidelity.

Stacking of two-dimensional electron gases (2DEGs) obtained by δ-doping of Ge and patterned by scanning probe lithography is a promising approach to realize ultrascaled 3D epitaxial circuits, where multiple layers of active electronic components are integrated both vertically and horizontally. We use atom probe tomography and magnetotransport to correlate the real space 3D atomic distribution of dopants in the crystal with the quantum correction to the conductivity observed at low temperatures, probing if closely stacked δ-layers in Ge behave as independent 2DEGs. We find that at a separation of 9 nm the stacked-2DEGs, while interacting, still maintain their individuality in terms of electron transport and show long phase coherence lengths (∼220 nm). Strong vertical electron confinement is crucial to this finding, resulting in an interlayer scattering time much longer (∼1000 × ) than the scattering time within the dopant plane.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009