In this study we characterize the thermal sensitivity of lateral diodes fabricated in a commercial 180 nm SOl-CMOS process. The current responsivity to temperature and the low-frequency noise were measured and correlated to the device dimensions. We also report on a FPA microbolometer sensor for THz imaging (0.6-1.2 THz) implemented with lateral diode detectors coupled to on-chip antennas.

A focal plane array of 24×24 elements for imaging applications in the 0.6-1.2 THz range was fabricated in a SOI-CMOS process and post-processed with MEMS technology. The pixels are fully released antenna-coupled CMOS microbolometers, where the sensing element is a lateral diode. The chip includes a column-multiplexed readout circuit with digital calibration and analog output. The pixel responsivity and NEP were characterized with CW sources, showing high sensitivity.

The main mechanisms responsible for performance degradation of millimeter wave (mmWave) and terahertz (THz) on-chip antennas are reviewed. Several techniques to improve the performance of the antennas and several high efficiency antenna types are presented. In order to illustrate the effects of the chip topology on the antenna, simulations and measurements of mmWave and THz on-chip antennas are shown. Finally, different transceiver architectures are explored with emphasis on the challenges faced in a wireless multi-core environment.

In this paper, we present a comprehensive study on the operation of an antenna-coupled THz bolometer based on a micro-machined SOI-CMOS thermal sensor. The pixels are designed to operate at room temperature in vacuum. We focus on a new planar skirt antenna, which combines high sensitivity within a 0.6-1.2 THz band and 30 ° HPBW. We present an overview of the design considerations, as well as the characterization results which were obtained with both broadband and CW THz sources. The NEP of the pixel is of the order of 25 pW/Hz 1/2 , with responsivity 100 mA/W at the optimal operating point. The peak responsivity to a broadband THz signal is 600 mA/W. The ease of integration with a read-out circuit and the low power dissipation make this type of pixel a good candidate for focal plane array architecture.

A 19×8 pixel array with a read-out integrated circuit was designed and fabricated in a micro-machined SOI-CMOS process. The pixels are antenna-coupled MOSFET bolometers operating at room temperature in a wide 0.6–1.2 THz band. The read-out circuit features column multiplexed differential amplifiers, offset calibration capability and chopper stabilization. We present the performance of the read-out circuit building blocks, as well as characterization results of the pixels, which demonstrate good detection sensitivity.

Recent publications show strong correlation between the sub-THz reflection coefficient of a human skin and various stress related ECG parameters. The main hypothesis explaining the phenomenon is based on the coiled nature of human sweat ducts. The way to the development of disruptive commercial applications exploiting this phenomena, traverses through multi-pixel imaging of the human skin tissue (in the sub-THz range). Towards that goal, a fully integrated and packaged SiGe based total-power single pixel receiver (operating in the W-band) has been employed for human stress gauging in both reflectometric and radiometric modes. Initial (and quite encouraging) results are brought forth in this article.

A bolometer device 1, for use in a bolometer array, for measuring a radiation-induced temperature change. The bolometer device 1 comprises: a bolometer sensor comprising: at least two antenna elements 4 coupled with one of their ends at a center position; a temperature sensing element 3 attached at the center position for detecting a temperature at the center position and for providing an electrical measure in response to the detected temperature; and one or more holding elements 5, each for mechanically supporting the bolometer sensor at an end portion of a respective one of the antenna elements 4. At least one of the holding elements 5 is electrically conductive, so that the electrical measure can be read out via the holding element 5. The antenna elements may be formed spirally or linearly extending outwardly from the center position. The bolometer sensor may be centrally arranged in a support frame 2, and each of the holding elements 5 may couple the bolometer sensor with one side of the support frame 2.

In the pursuit of an uncooled THz sensor, we address the specific modeling and optimization method for micro-machined transistors for the implementation of antenna-coupled MOSFET bolometers. We discuss the degrees of freedom for maximizing the device's SNR, outlining also the trade-offs in relation to the requirements of an integrated read-out circuit. The methodology was applied to novel antenna-coupled THz sensors manufactured in a 0.18-μm SOI CMOS process. The theoretical results are supported by the measurements of these devices.

We report on the design, fabrication and measurements of a new THz sensor concept based on an antenna-coupled MOSFET bolometer for room-temperature passive THz imaging for security and medical-diagnostic applications. The device is fabricated in a 180-nm CMOS SOI technology followed by a post-CMOS MEMS process which guaranties a very high thermal insulation of the sensor. In this sensor, the wide bandwidth THz antenna absorbing the electromagnetic field is directly coupled to the bolometer for maximum energy collection, whereas its design aims at minimizing its thermal mass as is necessary for fast frame rates. DC measurements before and after the MEMS process as well as sensor output signal time constant and THz antenna pattern measurements are presented. The final sensor is part of a large pixel array of 117 elements. Simulated array characteristic is presented proving that the mutual interaction between the pixels is small enough for imaging applications.

We report on the design, fabrication and measurements of a new THz sensor concept based on an antenna-coupled MOSFET bolometer for room-temperature passive THz imaging for security and medical-diagnostic applications. The device is fabricated in a 180-nm CMOS SOI technology followed by a post-CMOS MEMS process. In this sensor, the antenna absorbing the THz electromagnetic field is directly coupled to the bolometer for maximum energy collection, whereas its design aims at minimizing its thermal mass as is necessary for fast frame rates. DC measurements before and after the MEMS process as well as thermal time constant and THz antenna measurements are presented.

The design of a broadband on-chip antenna for passive THz imaging in the frequency range of 0.6 THz to 1.4 THz is reported. The antenna design has to fulfill the requirements of the IBM CMOS process and the MEMS post CMOS processing. The antenna is coupled directly to the sensor, a MOSFET bolometer. Because of this direct coupling and the need for real time imaging, only extremely physically small antennas are feasible. Hence, typical broadband antennas like the toothed log-periodic antenna are not useable for this application and new antenna approaches have to be examined.

A promising solution to continue the complementary metal-oxide semiconductor (CMOS) scaling roadmap at the 22 nm technology node and beyond is CMOS-silicon on insulator (SOI), which is used especially in low-power and "system on chip" applications. CMOS-SOI involves building conventional MOSFETs on very thin layers of crystalline silicon. The thin layer of silicon is separated from the substrate by a thick layer of buried SiO 2 film, thus isolating the devices from the underlying silicon substrate and from each other. CMOS-SOI technology is already a leading technology in a wide range of applications where integrated CMOS-SOI-microelectromechanical systems or nanoelectromechanical systems (MEMS/NEMS) technologies provide unique sensing systems for IR and terahertz (THz) imagers. CMOS-SOI technology is traditionally classified into partially depleted (when the silicon device layer is thicker than the maximum gate depletion width) and fully depleted devices (when the device layer is fully depleted before the threshold voltage is reached). It may also be classified, like all CMOS technology, according to the minimal channel length, L min . This study focuses on partially depleted 0.18 RF CMOS-SOI technologies [4] with emphasis on the weak and strong inversion regions. This process is suitable for mixed-signal design because of its maturity and relatively low cost, while the methodology and results presented here may be extended to any advanced CMOS-SOI nano-transistors. The results of this study may provide a systematic approach to assessing the thermal behavior of CMOS-SOI transistors operating in a wide range of temperatures.

This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of 1/f noise, models of 1/f noise, and ways of measuring 1/f noise are briefly reviewed.

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5-1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz1/2 and NETD (Noise Equivalent Temperature Difference) of ~0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.

In this study we report measurements and modeling of true channel temperature of CMOS-SOI transistors. It is shown that the temperature rise is significant, above 100K, for transistors with applied power of ~0.1 milliwatt. The CMOS-SOI transistors were designed and fabricated with a standard partially depleted CMOS - SOI 0.18μm process. It is shown that the local heating of the channel carriers may result in higher temperatures than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have impact on circuit design and may be extended to regular CMOS submicron technology.

This study presents a new sensor for Terahertz Imaging, dubbed here as TeraMOS, which is based on several leading technologies: CMOS-SOI (Silicon on Insulator), MEMS (Micro Electro Mechanical Systems) and Terahertz Photonics. The paper focuses on the electrical characterization of CMOS-SOI "virgin" (unreleased) transistors fabricated in the IBM 0.1 mu m RF CMOS-SOI advanced process. By applying MEMS post processing to thermally isolate the transistors, the resulting CMOS-SOI-MEMS transistors become highly sensitive active bolometers - the TeraMOS sensors. The measured Temperature Coefficient of Current (TCC) as a function of temperature, gate voltage and drain current is presented. A new suggested figure of merit for the TeraMOS sensors is defined by TCC2.I and measured values of it are presented.