Optically driven quantum materials exhibit a variety of non-equilibrium functional phenomena [1-11], which are potentially associated with unique transport properties. However, these transient electrical responses have remained largely unexplored, primarily because of the challenges associated with integrating quantum materials into ultrafast electrical devices. Here, thin films of K3C60 grown by Molecular Beam Epitaxy were connected by coplanar terahertz waveguides to a series of photo-conductive switches. This geometry enabled ultrafast transport measurements at high current densities, providing new information on the photo-induced phase created in the high temperature metal by mid-infrared excitation [12-16]. Nonlinearities in the current-voltage charactersitics of the transient state validate the assignment of transient superconductivity, and point to an inhomogeneous phase in which superconducting regions of the sample are connected by resistive weak links [17-23]. This work opens up the possibility of systematic transport measurements in driven quantum materials, both to probe their properties and to integrate them into ultrafast optoelectronic platforms.

The physics of optically-induced superconductivity remains poorly understood, with questions that range from the underlying microscopic mechanism to the macroscopic electrical response of the non-equilibrium phase. In this paper, we study optically-induced superconductivity in K$_{3}$C$_{60}$ thin films, which display signatures of granularity both in the equilibrium state below T$_{c}$ and in the nonequilibrium photo-induced phase above T$_{c}$. Photo-conductive switches are used to measure the ultrafast voltage drop across a K$_{3}$C$_{60}$ film as a function of time after irradiation, both below and above T$_{c}$. These measurements reveal fast changes associated with the kinetic inductance of in-grain superconductivity, and a slower response attributed to the Josephson dynamics at the weak links. Fits to the data yield estimates of the in-grain photo-induced superfluid density after the drive and the dynamics of phase slips at the weak links. This work underscores the increasing ability to make electrical measurements at ultrafast speeds in optically-driven quantum materials, and demonstrates a striking new platform for optoelectronic device applications.

Optically driven quantum materials exhibit a variety of non-equilibrium functional phenomena, which to date have been primarily studied with ultrafast optical, X-Ray and photo-emission spectroscopy. However, little has been done to characterize their transient electrical responses, which are directly associated with the functionality of these materials. Especially interesting are linear and nonlinear current-voltage characteristics at frequencies below 1 THz, which are not easily measured at picosecond temporal resolution. Here, we report on ultrafast transport measurements in photo-excited K 3 C 60 . Thin films of this compound were connected to photo-conductive switches with co-planar waveguides. We observe characteristic nonlinear current-voltage responses, which in these films point to photo-induced granular superconductivity. Although these dynamics are not necessarily identical to those reported for the powder samples studied so far, they provide valuable new information on the nature of the light-induced superconducting-like state above equilibrium T c . Furthermore, integration of non-equilibrium superconductivity into optoelectronic platforms may lead to integration in high-speed devices based on this effect.

In the manuscript arXiv:2210.01114, Dodge and co-authors discuss the influence of pump-probe profile deformations on the reconstructed non-equilibrium optical conductivity of K$_3$C$_{60}$. They state that when pump-induced saturation of the probe response is taken into account, the reconstructed optical properties are not superconducting-like, as was claimed in a number of experimental reports by our group. We show here that the conclusion reached by Dodge et al. is unjustified. In fact, independent of the specific model, including the problematic saturation profile proposed by the authors, the reconstructed optical properties are those of a finite temperature superconductor. The true fingerprint of superconductivity, which is the $1/\omega$ divergence of the imaginary conductivity, $\sigma_{2}(\omega)$, is retained and is virtually independent of the chosen model. The only model-dependent feature is the degree of gapping in $\sigma_{1}(\omega)$. In all cases the extracted optical properties reflect the presence of residual quasiparticles, which at finite temperatures are inevitably present alongside the superfluid.

Abstract Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-electron coupling strength as defined by the effective fine structure constant $${\alpha }_{ee}^{* }$$ α e e * . Although h-BN with unique dielectric properties has been widely used as an important substrate for graphene, so far there is no experimental report of plasmarons in graphene/h-BN yet. Here, we report direct experimental observation of plasmaron dispersion in graphene/h-BN heterostructures through angle-resolved photoemission spectroscopy (ARPES) measurements upon in situ electron doping. Characteristic diamond-shaped dispersion is observed near the Dirac cone in both 0° (aligned) and 13.5° (twisted) graphene/h-BN, and the electron-electron interaction strength $${\alpha }_{ee}^{* }$$ α e e * is extracted to be $${\alpha }_{ee}^{* }\approx 0.9\pm 0.1$$ α e e * ≈ 0.9 ± 0.1 , highlighting the important role of electron-electron interaction. Our results suggest graphene/h-BN as an ideal platform for investigating strong electron-electron interaction with weak dielectric screening, and lays fundamental physics for gate-tunable nano-electronics and nano-plasmonics.

High power mid-infrared light pulses of tunable pulse length were generated to stabilize light-induced superconductivity in K 3 C 60 for nanoseconds. This metastable state showed a vanishing electrical resistance at five times the material’s equilibrium critical temperature.

This book focuses on angle-resolved photoemission spectroscopy studies of the novel interfacial phenomena in three typical two-dimensional material heterostructures: graphene/h-BN, twisted bilayer graphene and topological insulator/high-temperature superconductors.

Graphene/h-BN is a prototypical van der Waals heterostructure and exhibits novel electronic properties. The substrate-hexagonal Boron nitride (h-BN) shares similar honeycomb lattice structure with graphene, yet with 1.8% lattice mismatch and large band gap (5.97 eV) due to the inversion symmetry breaking of distinct boron and nitrogen atoms. Due to the flatness of h-BN, graphene devices on h-BN exhibit greatly improved properties including reduced ripples, suppressed charge inhomogeneities and higher mobility. More interestingly, the moiré superlattice potential induced by the lattice mismatch and crystal orientation provides new method to engineer the band structure of graphene and lead to the realization of many novel quantum phenomena, such as self-similar Hofstadter butterfly states [1–4], topological currents [5] (see Fig. 3.1). The Hofstadter butterfly states refer to the fractal spectrum under magnetic field which resemble the butterfly. The experimental attempts to realize this effect have been limited by two facts, on one hand, the typical atomic-scale superstructure requires unfeasible large magnetic field to reach the commensurability condition, on the other hand, the period of artificially constructed superstructures is too large that the corresponding field is too small to overcome the disorder completely.

Twisted bilayer graphene (tBLG), consisting of two simple monolayer graphene (Fig. 4.3a), can be thought of as simpler van der Waals heterostructure. Due to the relative rotation between two graphene layers, similar moiré pattern is induced. The induced moiré potential together with interlayer coupling leads to the band modulation and yields rich novel phenomena, e.g. van Hove singularity (saddle point in band structure) [1–3, 17], predicted suppressed Fermi velocity at small twisting angles [3–7], and even the recently reported Mott-like insulating states and doping-induced superconductivity at magic angles [8, 9].

The search for new quantum phenomena and novel functionalities have been among the tremendous driving forces in condensed matter physics and materials science. In recent years, due to the development of topology theories, many concepts of high-energy physics have found its counterpart with the quasiparticle excitations in condensed matter physics, such as the Dirac Fermions in Graphene [1] and Weyl Fermions in recently discovered Weyl semimental [2, 3]. Among them, Majorana zero modes, i.e. Majorana Fermions, which are their own antiparticles and occur at exactly zero energy, are particularly intriguing, not only because of its special properties obeying non-Abelian statistics, but also its potential application as building blocks for topological fault-tolerant quantum computation [4, 5]. Although recent one-dimensional semiconductor quantum wires coupled with conventional superconductors show the traces of Majorana zero modes, the decisive evidence has been lacking and many debates remain [6].

The interlayer coupling can be used to engineer the electronic structure of van der Waals heterostructures (superlattices) to obtain properties that are not possible in a single material. So far research in heterostructures has been focused on commensurate superlattices with a long-ranged Moiré period. Incommensurate heterostructures with rotational symmetry but not translational symmetry (in analogy to quasicrystals) are not only rare in nature, but also the interlayer interaction has often been assumed to be negligible due to the lack of phase coherence. Here we report the successful growth of quasicrystalline 30° twisted bilayer graphene (30°-tBLG), which is stabilized by the Pt(111) substrate, and reveal its electronic structure. The 30°-tBLG is confirmed by low energy electron diffraction and the intervalley double-resonance Raman mode at 1383 cm-1 Moreover, the emergence of mirrored Dirac cones inside the Brillouin zone of each graphene layer and a gap opening at the zone boundary suggest that these two graphene layers are coupled via a generalized Umklapp scattering mechanism-that is, scattering of a Dirac cone in one graphene layer by the reciprocal lattice vector of the other graphene layer. Our work highlights the important role of interlayer coupling in incommensurate quasicrystalline superlattices, thereby extending band structure engineering to incommensurate superstructures.

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

The generally accepted view that spin polarization in non-magnetic solids is induced by the asymmetry of the global crystal space group has limited the search for spintronics materials mainly to non-centrosymmetric materials. In recent times it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here, by using spin- and angle-resolved photoemission spectroscopy, we report the observation of helical spin texture in monolayer, centrosymmetric and semiconducting PtSe 2 film without the characteristic spin splitting in conventional Rashba effect (R-1). First-principles calculations and effective analytical model analysis suggest local dipole induced Rashba effect (R-2) with spin-layer locking: opposite spins are degenerate in energy, while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of the spin polarization physics but also may find applications in electrically tunable spintronics.

Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. Although Lorentz invariance is required in high energy physics, it is not necessarily obeyed in condensed matter physics, and thus Lorentz-violating type-II Weyl/Dirac fermions could be realized in topological semimetals. The recent realization of type-II Weyl fermions raises the question whether their spin-degenerate counterpart-type-II Dirac fermions-can be experimentally realized too. Here, we report the experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe2 single crystal. Angle-resolved photoemission spectroscopy measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the Γ-A direction, confirming PtTe2 as a type-II Dirac semimetal. Our results provide opportunities for investigating novel quantum phenomena (e.g., anisotropic magneto-transport) and topological phase transition.Whether the spin-degenerate counterpart of Lorentz-violating Weyl fermions, the Dirac fermions, can be realized remains as an open question. Here, Yan et al. report experimental evidence of such type-II Dirac fermions in bulk PtTe2 single crystal with a pair of strongly tilted Dirac cones.

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA) and is promising for nanoscale electronics and optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (μm or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here, by using ARPES with a nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings.

Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals.

The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe_2 film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.