Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

A series of heavy ion and laser irradiations was performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed.

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results of our studies suggest the single-event upset in registers and D-Cache tend to increase with frequency. This might have important implications for the overall single-event upset trend as technology moves toward higher frequencies.

Proton and heavy-ion single-event upset susceptibility has been measured for the Motorola PowerPC7400. The results show that this advanced device has low upset susceptibility, despite the scaling and design advances.

Differential cross sections from 3He(π±, π0) and 3He(π±, π0p) measurements are presented. The π0 energy spectra from 3He(π±, π0) and 3He(π+, π0p) are characteristic of quasi-free reactions. The proton angular distribution from 3He(π+, π0p) also show evidence of a quasi-free mechanism. Indications of multi-nucleon processes are presented in the 3He(π−, π0p) data. At least two nucleons must be involved. Comparisons between coincidence and single-arm measurements from this work and previous measurements of charged pion scattering on 3He provide evidence of an enhanced multiple scattering contribution to the charge exchange channel.

We report coincidence measurements of the (pi-+,pi-0p) reaction at a beam energy of T-pi + = 165 MeV. The neutral pions were detected by the LAMPF pi-0 spectrometer and the protons by an array of plastic-scintillator telescopes. The resulting energy resolution for the determination of the excitation energy of the residual nucleus was about 10 MeV. Measurements were performed on O-16 at laboratory angles THETA-pi-0 = 70-degrees, 80-degrees, 110-degrees, and 130-degrees. The cross section is predominantly quasifree. Its angular dependence follows the trend of the free single-charge-exchange cross section at back angles and is somewhat suppressed relative to this to more forward angles. Events corresponding to removal of p-shell nucleons were identified by their pi-0 and p energies. The pi-0 energy spectra for such events are compared to similar pion energy spectra for the O-16(pi-+/-,pi-+/-p) reactions; the cross-section ratios are consistent with ratios calculated for isospin coupling alone. pi-0 energy spectra are also compared to predictions of DELTA-hole model calculations; the calculations for events in which protons are detected at the conjugate quasifree angle underestimate the (pi-0,pi-0p) cross sections by 30-55%. At THETA-pi-0 = 110-degrees the (pi-+,pi-0p) reaction was also studied on Fe, Sn, and Pb. No significant A dependence of the cross section was observed.

The reaction ${\ensuremath{\pi}}^{\mathrm{\ensuremath{-}}}$${+}^{3}$He\ensuremath{\rightarrow}\ensuremath{\eta}+t has been observed by detecting \ensuremath{\eta}\ensuremath{\rightarrow}2\ensuremath{\gamma} decays. The observed forward-angle cross sections vary from \ensuremath{\sim}100 \ensuremath{\mu}b/sr at 680 MeV/c to \ensuremath{\sim}2 \ensuremath{\mu}b/sr at 590 MeV/c. Distorted-wave impulse-approximation calculations reproduce the shape but underestimate the magnitude of the observed cross section. These cross sections are approximately 100 times larger than those for the reaction p+d\ensuremath{\rightarrow}\ensuremath{\eta}${+}^{3}$He measured at similar \ensuremath{\eta} center-of-mass energies.

Small-angle differential cross sections for the (${\ensuremath{\pi}}^{+}$,${\ensuremath{\pi}}^{0}$) reaction have been measured at energies of 300, 425, and 500 MeV for the isovector giant dipole resonance in a range of targets. Peak differential cross sections are inferred by extrapolation in angle. The target-mass dependence of these cross sections, normalized to the expected sum rule, shows the same mass dependence at 425 MeV that is observed for isobaric analog state transitions.