Air pollution can be studied by appropriate bio-indicators, such as pine needles due to their waxy surface. Metal uptake and accumulation is determined on growing area, but also on the respective species. Scope of the study was to analyse needles of Pinus densiflora Siebold et Zucc., Pinus nigra Arnold, Pinus sylvestris L., and Pinus thunbergiana Franco for metals and metalloids, namely aluminium, arsenic, boron, barium, calcium, cadmium, cobalt, copper, chromium, iron, potassium, lithium, magnesium, manganese, molybdenum, sodium, nickel, lead, selenium, strontium, and zinc. Quantitation of the analytes was performed using inductively coupled plasma atomic emission spectrometry and inductively coupled plasma sector field mass spectrometry after acidic microwave-assisted digestion. The obtained data were checked for statistically significant differences. The metal levels differ between the various species, but no general tendency was found for all metals. Since the environmental conditions were the same for all sampled trees, the differences in metal accumulation are supposed to be linked to species of pine tree. The diverse accumulation behaviour can be used for treating polluted soil.

One important plant of the Rosaceae family which is commonly used as phytopharmaceutical in Europe and North America is Hawthorn (Crataegus monogyna). The fruits, the leaves together with their extracts are applied in patients suffering mild cardiac disorders or nervosity. Since the leaves as well as the berries act as diuretics a sufficient micronutrient supply has to be guaranteed. On the other the quantities of toxic elements present in the plant parts should be at levels without harmful effects on human health. For this purpose Hawthorn leaves and flowers were collected in a remote area in 2011 and 2012 and analysed for their elemental composition. The metals uptaken from the soil were supposed to be in a similar range, thus the impact of airborne contamination by heavy metal translocation could be studied. The elements investigated were Ba, Cd, Co, Cr, Cu, Mn, Ni, Pb, Sr, and Zn. After harvesting the samples were dried, homogenized, digested and then analysed by ICP-AES. The contents of all elements are in the μg/g range. In the samples of 2012 higher concentrations were found for Co, Cu, Mn, Ni, and Zn, lower concentrations were registered for Ba, Pb, and Sr. The amounts of Cd and Cr were statistically insignificantly lower in 2012 than 2011.

The measurement technique for quantitative distribution analysis of P in the layer system SiO2/Si was optimized. Oxygen primary ions and an increased oxygen pressure (5.10E-5mbar) in the sample chamber were used for elimination of the matrix effect. A computer routine for precise adjustment of the mass spectrometer during depth profiling with high mass resolution was developed. Charging effects were compensated by flooding the sample with electrons, optimized biasing of the accelerating potential of the secondary ions and normalization to a reference signal. The improved measurement technique was used for determination of segregation coefficients which are used as input parameters for process modeling in MOS transistor production.

Lysimeters constructed of polyacrylic and fitted with either a porous nylon membrane or a porous ceramic cup were tested for their adsorption characteristics with respect to Ph, Cr, Cu, As, Cd, Co, Mn, Ni, and Zn. Laboratory tests were conducted at pH 4, 5, and 6 using metal concentrations that are representative of natural soil solutions. The ceramic lysimeters significantly lowered the concentrations of Cd, Co, Mn, Ni, and Zn, and almost completely removed Ph, Cr, Cu, and As from solution. The nylon lysimeters had virtually no effect on metal concentrations at pH 4 to 5, and only slightly decreased the concentrations of As, Cr, Cu, and Ph at pH 6. Based on field experience, an optimized design of the nylon lysimeter is presented using double nylon membranes to improve the mechanical resistance.

The axial behavior of boron implants in [100], [110] and [111] silicon wafers is investigated by secondary ion mass spectrometry. The conventional electronic stopping models are tested by comparing with experimental results. The dependence of the channelling effects on these three major low-index directions are revealed. A three-parameter model is presented to describe channelling of boron in silicon. The results give a deeper insight into the channelling phenomena and provide the necessary information to study an electronic energy-loss model for boron channelling in a silicon target.

It is known from previous round robin experiments [1] that relative sensitivity factors, obtained on identical samples by different SIMS instruments, frequently disagreee by a factor of up to 50 and that element concentrations, derived from the raw peak height data by some quantification algorithm, still disagree by a factor of ~5. Two methods, both based on the relative sensitivity factor (RSF) quantification scheme, have been suggested to obtain inter-laboratory standardization of quantitative SIMS analyses: (a) “Standard — Transfer”; for every element/matrix system to be analyzed, a well characterized external standard sample is distributed to each laboratory. Previous to analysis of the unknown, RSFs are determined from the appropriate standard and used for the quantification of the unknown. The method rests on the availability of identical standards in each laboratory and not on the agreement in raw ion intensity data. Each laboratory has to determine its own RSFs previous to each individual analysis. the accuracy is of the order of 20% [2], determined mainly by the accuracy of the standard composition. (b) “Cross-Calibration”; here, the aim is to tune different instruments to give identical RSFs from identical samples. If this can be realized, RSFs can be transferred between instruments and laboratories so that the workload of determining RSFs can be split between laboratories. Standard samples still are required for each unknown/matrix system,but essentially only in that laboratory determining the particular RSF. The accuracy of the method is determined by the quality of the standard and of the instrument tuning.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTCross calibration of secondary ion mass spectrometersFriedrich. Ruedenauer, Wolfgang. Steiger, Miklos. Riedel, Horst E. Beske, Horst. Holzbrecher, Michael. Gericke, Carl Ernst. Richter, Michael. Rieth, Manfred. Trapp, and . et al.Cite this: Anal. Chem. 1985, 57, 8, 1636–1643Publication Date (Print):July 1, 1985Publication History Published online1 May 2002Published inissue 1 July 1985https://doi.org/10.1021/ac00285a030RIGHTS & PERMISSIONSArticle Views23Altmetric-Citations10LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (1009 KB) Get e-Alerts Get e-Alerts

Es werden die durch die technische Weiterentwicklung der Sekundär-Ionen-Massenspektrometrie neuen bzw. verbesserten Möglichkeiten der Charakterisierung von Werkstoffen dargestellt. Im einzelnen werden Fortschritte auf den Gebieten der Multi-Element-Spurenanalyse, der lateralen Verteilungsanalyse durch Mikrobereichscharakterisierung sowie der Oberflächenverteilungsanalyse mittels der Tiefenprofilmeßtechnik an Hand von technischwissenschaftlichen Fragestellungen behandelt. Neben den erweiterten Möglichkeiten von SIMS und deren allgemeiner Rolle in der Werkstoffanalytik werden auch die Grenzen dieser Methode und deren Einbindung in einen Methodenverbund diskutiert.

Protective coatings of hard materials are used on hard-metal (WC-Co) tools for improvement of wear resistance1. In a further development program, the properties of Al-B-mixed oxide and Ti(C, N, O) have been investigated with respect to wear resistance for cast iron machining and high speed cutting.

SIMS in its most modern instrumental configuration enables a major progress in ultra trace bulk analysis, multi element trace analysis of microdomains, as well as micro and surface distribution analysis of trace elements. The potential and limitations for trace characterization of technical materials, like refractory metals and their alloys, zinc ores, Al-Si cast alloys and thin film metallization structures are discussed.

Proceeding from the technological requirements for semiconductor characterization the progress and limitations of quantitative distribution analysis for B and As in silicon semiconductors by ionprobe microanalysis are presented. It is shown that by use of new instrumental technology the detection power for extreme trace analysis of dopant elements can be increased significantly and that development of suitable quantification procedures enables quantitative distribution analysis to be performed with good accuracy. The information obtained provides a basis for establishing more accurate diffusion models for highly doped materials.