Emollients play an important part in the management of patients with dry skin disorders, such as atopy, allergy, eczema, psoriasis or dryness following chemotherapy or radiotherapy. Their use in the treatment of diseased and sensitive skin requires not only an efficient hydrating and lipid-replenishing effect on the skin, but minimal risk for skin irritation or sensitization. This will be influenced by their formulation and number and type of ingredients and, due to the nature of their application, requires clinical testing to ensure their appropriateness for dermatological rather than cosmetic use. A new generation of emollients has been developed for the care of dry, or very dry, and sensitive skin. Among these, Dardia Lipo Line (Intendis GmbH, Berlin, Germany) has been formulated specifically for use in post-therapy preventive skin care. The current clinical evidence for this line of emollients is reviewed here.

Hydrogen incorporation into heavily carbon-doped GaAs grown by metal-organic vapour phase epitaxy using carbon tetrabromide (CBr4) has been studied. In the base layer of as-grown GaInP/GaAs heterojunction bipolar transistors (HBTs), about 20% of the carbon acceptors are found to be passivated by hydrogen. The outdiffusion of this hydrogen during an ex situ annealing at 450 °C in nitrogen, which is effective for carbon-doped single layers, is blocked by n-type capping layers in HBTs. An in situ annealing step was found to be suitable to reduce the acceptor passivation in HBTs to about 10%.

The dimethylmetal bis(trimethylgermyl)amides of Al, Ga, and In have been prepared from Li[N(GeMe3)2] and Me2MCl (Me = CH3, M = Al, Ga) or Me2MCN (M = Ga, In) in inert solvents. The NMR (H-1, C-13) and vibrational spectra (IR and Raman) of these dimeric compounds have been assigned and discussed. According to the X-ray structure determination [Me2InN(GeMe3)2]2 crystallizes in the monoclinic space group C2/c (Z = 4, R = 0.032) and is isomorphous with the bis(trimethylsilyl) homologue.

During bombardment of Ga1−xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which is essentially deeper than the penetration depth of the primary ions. Using oxygen and cesium as primary ions ‘varying’ energy and angle of incidence, residual gas pressure and matrix composition their effects on the phenomena were investigated. Although some remarkable properties of the sample modification process could be found, no theoretical description can be given up to now.

SIMS investigations are presented on erosion rates, suited matrix ions for layer identification in layer systems of GaAs and GaAlAs depending on the Al concentration and the acceptable secondary ion energies using O 2 + and Ar + primary ions and positive secondary ions. The development of relative sensitivity factors of the doping elements Mg, Si, Cr, Zn, Ge, Sn is also measured depending on the Al concentration and the accepted secondary ion energy using O 2 + bombardment. The SIMS measurements are shown to be very sensitive to the choice of position and width of the ion energy window. The investigations show partially considerable enhancement of the low-energy portion of the secondary ion energy distribution with increasing Al content, typical for this chemical element, especially between O and 20 at % Al. The higher-energy portion of the energy distributions is much less influenced by the Al content.

Gold distribution in SiO2Si structures after diffusion and its redistribution under irradiation by high-energy electrons are studied by DLTS and SIMS methods. It is shown that the concentration of substitutional gold increases at radiation doses of 1013 to 1014 cm−2, which is due to the presence of a previously inactive interstitial component AuI and its dissolution in vacancies. A radiation dose increase results in radiation-induced gettering of gold by the SiO2Si interface with subsequent penetration of gold into SiO2. The state of the SiO2Si interface affects the behaviour of gold at irradiation. [Russian Text Ignore]

The usefulness of the guideline recommended in 1976 by the World Health Organization (WHO) for the differential diagnosis of ovarian sterility needs critical reevaluation, since it does not take into account new aspects such as the pulsatility of GnRH secretion, androgen excess, or thyroid disorders and other phenomena related to ovarian dysfunction. In order to demonstrate the relative frequency of such phenomena, the authors examined 183 women with secondary amenorrhea of more than three months' duration (mean +/- SD = 12.7 +/- 18.4 months). The endocrine status of these women was examined under standardized conditions in two clinical endocrinology units in the cities of Hamburg and Berlin. The percentages of abnormal hormonal data (greater than mean +/- SD + gray zone) were as follows: testosterone (T) 39.9%; DHEA sulfate (DS) 29.5%; prolactin (PRL) 18.0%; TSH 11.5%; FSH or LH 26.8%; estradiol (E2) 30.1%. Among 96 patients with increased T and/or DS (52.5% of all patients), 53 patients (55.2%) did not show any clinical signs of androgenization (hirsutism, acne). Retrospective evaluation of all data revealed that a stepwise diagnostic procedure would have resulted in the following cumulative percentages of hormonal abnormalities: (1) T = 39.9%; (2) +DS = 52.5%; (3) +PRL = 60.2%; (4) +LH/FSH = 82.0%; (5) +E2 = 91.2%; (6) +TSH = 92.3%. Only in 7.7% of all patients were all hormonal parameters within normal ranges. Individual case analysis showed that 52.5% of all patients had hyperandrogenemia, while 18% had hypothalamic amenorrhea without any other pathologic condition; 17.5% had hyperprolactinemia and 3.3% primary ovarian insufficiency. Another 4.9% had hypothyroidism only, while 1.1% had exclusively hyperthyroidism. Combined hormonal deviations were found in 24% of all patients. Considering the differential diagnosis of secondary amenorrhea from an economic point of view, one comes to the conclusion that direct and indirect expenditures are similar in magnitude, no matter whether one prefers a conventional stepwise procedure or a one-step hormonal analysis encompassing all potentially relevant hormones (DM 859.00 + 10 weeks waiting time vs. DM 827.50 + 1 week waiting time). Androgen excess is much more frequent than was believed; hirsutism and/or acne by no means necessarily occur in cases of androgen excess. Hyperprolactinemia is less frequent than hyperandrogenemia. Thyroid status should be evaluated in all women with functional amenorrhea. The stepwise diagnostic procedure as recommended by the WHO is time-consuming, complicated, and sometimes incomplete in the diagnostic work-up, with obvious potential disadvantages for therapy.(ABSTRACT TRUNCATED AT 400 WORDS)

Die häufigste Ursache der sekundären Amenorrhoe ist die hyperandro-genämisch bedingte Ovarialinsuffizienz. Allein in 35,5%, kombiniert in zusätzlichen 16,9% aller Fälle. Von besonderer Bedeutung dabei ist die Tatsache, daß 56,5% aller Patientinnen keinerlei Androgenisierungser-scheinungen aufwiesen. Es ist daher zu überlegen, ob nicht die Androgene T und DS bei amenorrhoischen Patientinnen zusammen mit PRL routinemäßig bestimmt werden müssen. Die Hyperprolaktinämie spielt dabei gegenüber der Hyperandrogenämie eine untergeordnete Rolle. Schilddrüsenfunktionsstörungen sollten nicht übersehen werden.

Atrial natriuretic factors (ANF) have been reported to modulate the function of several steroidogenic tissues, including adrenal glomerulosa cells, murine tumor Leydig cells and mouse Leydig cells [1, 2, 3]. In mouse Leydig cells we have shown that the atrial peptides, rat atrial natriuretic peptide (rANP), rat atriopeptin I (rAP-I) and rat atriopeptin II (rAP-II) can stimulate testosterone production by a cGMP-dependent mechanism [3]. In order to further investigate the specificity of action of these peptides, we examined the effect of rANP, rAP-I and rAP-II on isolated rat luteal cells.

A method for determining the nitrogen concentration in GaAs1–xPx:N epitaxial layers on GaP substrates by transmission spectroscopy is described. The dependence of the integral absorption cross-section of the bound exciton for the AN and Nx line on the chemical composition is determined by the calibration of the optical method by secondary ion mass spectroscopy (SIMS). The relationship between the nitrogen concentration as well as the ammonium partial pressure and the chemical composition is investigated. The NN1 line is found in highly N-doped GaAs0.33P0.67:N samples in the cathodoluminescence (Cl) spectra. In GaAs1–xPx:N samples maximum nitrogen concentrations near NN ≈ 3 × 1020 cm−3 are determined. The optically active portion in these samples amounted to 3.5 × 1019 cm−3. Es wird eine Methode zur Stickstoffkonzentrationsbestimmung, basierend auf der Auswertung der Transmissionsspektren von GaAs1–xPx-Epitaxieschichten auf GaP-Substraten, beschrieben. Durch Kalibrierung des optischen Meßverfahrens mittels implantationsgeeichter Sekundärionen-massenspektroskopie-(SIMS)-Daten wird die Abhängigkeit des integralen Absorptionsquerschnittes des gebundenen Exzitons für die AN- bzw. Nx-Lime von der Mischkristallzusammensetzung ermittelt. Es wild die Stickstoffkonzentration in Abhängigkeit vom Ammoniakpartialdruck und von der Mischkristallzusammensetzung angegeben. An hochdotierten GaAs0,33P0,67:N-Proben wird im Katodolumineszenzspektrum die NN1-Linie gefunden. Für GaAs0,33P0,67-Proben werden maximale Sticksoffkonzenztrationen von etwa 3 ≈ 1020 cm−3 bestimmt. Der optisch aktive Anteil ist dabei etwa 3,5 × 1019 cm−3.

It is known from previous round robin experiments [1] that relative sensitivity factors, obtained on identical samples by different SIMS instruments, frequently disagreee by a factor of up to 50 and that element concentrations, derived from the raw peak height data by some quantification algorithm, still disagree by a factor of ~5. Two methods, both based on the relative sensitivity factor (RSF) quantification scheme, have been suggested to obtain inter-laboratory standardization of quantitative SIMS analyses: (a) “Standard — Transfer”; for every element/matrix system to be analyzed, a well characterized external standard sample is distributed to each laboratory. Previous to analysis of the unknown, RSFs are determined from the appropriate standard and used for the quantification of the unknown. The method rests on the availability of identical standards in each laboratory and not on the agreement in raw ion intensity data. Each laboratory has to determine its own RSFs previous to each individual analysis. the accuracy is of the order of 20% [2], determined mainly by the accuracy of the standard composition. (b) “Cross-Calibration”; here, the aim is to tune different instruments to give identical RSFs from identical samples. If this can be realized, RSFs can be transferred between instruments and laboratories so that the workload of determining RSFs can be split between laboratories. Standard samples still are required for each unknown/matrix system,but essentially only in that laboratory determining the particular RSF. The accuracy of the method is determined by the quality of the standard and of the instrument tuning.

A primary ovarian carcinoid tumour of insular strumal type in a 78-yr-old patient is reported. Strumal carcinoid of the ovary is a rare tumor of germ cell origin characterized by an intimate mixture of thyroid tissue and carcinoid. Correct diagnosis depends on a pathologic examination with the use of special stains. Because of its benign character, the treatment is primarily a surgical one and consists of a simple oophorectomy or salpingo-oophorectomy.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTCross calibration of secondary ion mass spectrometersFriedrich. Ruedenauer, Wolfgang. Steiger, Miklos. Riedel, Horst E. Beske, Horst. Holzbrecher, Michael. Gericke, Carl Ernst. Richter, Michael. Rieth, Manfred. Trapp, and . et al.Cite this: Anal. Chem. 1985, 57, 8, 1636–1643Publication Date (Print):July 1, 1985Publication History Published online1 May 2002Published inissue 1 July 1985https://doi.org/10.1021/ac00285a030RIGHTS & PERMISSIONSArticle Views23Altmetric-Citations10LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (1009 KB) Get e-Alerts Get e-Alerts

The recombination mechanism is investigated in GaAs0.11P0.89:N. A recombination model is used to describe the luminescence intensity in dependence on the temperature between 80 and 300 K, on the concentration of different donors, on the excitation level, and on the influence of nonradiative recombination processes for n- and p-type material. The agreement between model calculations and experimental data allows to determine the ionization energies of the nitrogen bound exciton and the donors (Te, S). The binding energy of the exciton (with respect to the band gap) is (66 ± 3) and (33 ± 3) meV of the electron isoelectronically bound to the nitrogen atom. The correspondence of theoretically and experimentally obtained data supports the assumption that the hole is bound by Coulomb interaction after trapping the electron to the N-centre. Es wird die Gültigkeit eines Rekombinationsmodells zur Beschreibung der Lumineszenzintensität in Abhängigkeit von der Temperatur zwischen 80 und 300 K, von der Konzentration und Ordnungszahl des Donators, vom Anregungsniveau und vom Einfluß nichtstrahlender Rekombinationsprozesse für n- und p-leitendes Material gezeigt. Die Übereinstimmung zwischen Modell und Experiment gestattet Rückschlüsse auf den Betrag der Ionisierungsenergien des gebundenen Exzitons sowie der Donatoren. Für die Bindungsenergie des Exzitons werden (66 ± 3) meV und für den Anteil des isoelektronisch an das Stickstoffatom gebundene Elektron (33 ± 3) meV ermittelt. Die Donatorionisierungsenergien von Te und S entsprerhen den Werten von Gap. Der Nachweis der Gültigkeit des Modells bestätigt die Vorstellung, wonach das Loch duruh Coulombwechselwirkung erst nach dem Einfang des Elektrons am N-Atom gebunden wird.

Depth profiles of dopant elements X (X1+, X2+ and, if possible, X3+) at low ion implantation fluences, D, (D < 5 × 1015 atom cm−2 for X = Al, Ga) and high fluences (D = 1 × 1017 atom cm−2 for X = B, P) in Si, primary ions Ar+, O2+, Cs+, were measured and the profile shapes compared. For O2+ bombardment, an intensity dependence of Ga2+ with c2 (c = concentration) was found whereas Al2+ behaved as Al1+ · B2+ and P2+ at high fluences behaved as Ga2+ and P3+ varied with c3. Ar+ bombardment only changed the behaviour of Al2+ (now like the other X2+). The Sin+ cluster ions in general showed intensity decreases in the high fluence implanted region for n > 1 which became more significant with increasing n. The decreases can be correlated with relatively high precision (± 20%) with (cSi)n for O2+ (n ⩾ 3) and Cs+ bombardment (n ⩾ 1). If this behaviour could be generalized for other matrix materials, it would be possibile to perform quantitative measurements with matrix (M) cluster ions Mn+ (n ⩾ 3) at high concentrations with quite high accuracy.

Using the “dynamic” SIMS mode (i.e., a sputtering rate of some nm s−1), the relative secondary-ion yields of atomic and cluster ions of mass up to 300 u for some doping elements X in silicon (X = B, Al, P, Ga, As) have been determined using bombardment by argon and oxygen ions in high vacuum (⩽10−5 Pa) and with oxygen gas introduced into the target chamber, in particular the ions X±, XOr±, SinX± and SinOrX±. It is found that for some relatively large clusters considerable secondary-ion yields appear. Model hypotheses have been tested using the measured data.

FEBS LettersVolume 115, Issue 1 p. 95-99 Full-length articleFree Access Biosynthesis of cytochrome c oxidase in isolated rat hepatocytes E. Hundt, E. Hundt Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this authorM. Trapp, M. Trapp Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this authorB. Kadenbach, B. Kadenbach Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this author E. Hundt, E. Hundt Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this authorM. Trapp, M. Trapp Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this authorB. Kadenbach, B. Kadenbach Biochemie, Fb Chemie der Philipps-Universität, Hans-Meerwein-Straße, D-3550 Marburg, FRGSearch for more papers by this author First published: June 16, 1980 https://doi.org/10.1016/0014-5793(80)80734-4Citations: 18AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume115, Issue1June 16, 1980Pages 95-99 ReferencesRelatedInformation