ABSTRACT This paper presents a mixed‐dimensional Ag NPs‐modified MoTe 2 /Ge near‐infrared (NIR) photodetector, which leverages the interface polar symmetry of built‐in electric fields in the Schottky junction and p‐n heterojunction and the localized surface plasmon resonance (LSPR) effect of Ag nanoparticles (NPs) to induce a pyro‐phototronic effect (PPE). Although it has been demonstrated that the pyroelectric effect can be induced by a built‐in electric field, thereby extending its applicability to a broader range of material systems, the number of reported 2D/3D mixed‐dimensional photodetectors coupling the pyroelectric effect is still limited. In this study, by successfully coupling pyroelectric and LSPR effects, the response performance of the Ag NPs‐modified MoTe 2 /Ge NIR photodetector is significantly enhanced. The fastest response speeds are a rise time of 1.22 µs and a fall time of 8.22 µs, representing 28.2 and 5.1 fold improvements, respectively, over the uncoupled photodetector. The peak responsivity and specific detectivity also reach 1040.4 mA/W and 4.86 × 10 10 Jones under 1064 nm, respectively. In addition, a proof‐of‐concept optical communication system was constructed, which successfully demonstrated real‐time transmission of complex data streams and convincingly shows the excellent performance from a practical application perspective.

Because of the high carrier mobility and suitable bandgap of single-walled carbon nanotubes (SWCNTs), combining SWCNTs with bulk semiconductors to form heterostructures has become a promising approach for near-infrared (NIR) detection. In addition, lead sulfide quantum dots (PbS QDs), as zero-dimensional (0D) materials, exhibit excellent light absorption, easy preparation, and tunable bandgaps. Integrating PbS QDs on the surface of photodetectors can effectively enhance the optoelectronic performance. In this paper, a NIR photodetector with a PbS QDs/SWCNTs/InP structure is proposed. This device exhibits good optoelectronic performance. For the 808 nm wavelength, the responsivity and detectivity reach 486.7 mA/W at 1 V and 6.04 & times; 10(11) Jones at 0.05 V, while for the 1064 nm wavelength, the responsivity and detectivity are 302.8 mA/W at 1 V and 1.12 & times; 10(11) Jones at 0.05 V. Furthermore, the response time is good, with a rise time of 9 mu s and a fall time of 55 mu s. Wireless optical communication is achieved based on these excellent properties of the device. These results provide a method to enhance NIR detection.

Near-infrared (NIR) photodetectors have emerged as critical components in optoelectronic systems. However, conventional bulk semiconductor photodetectors are limited by lattice mismatch and inappropriate band alignment. This work proposes a near-infrared (NIR) photodetector based on Ag NPs/MoS2 QDs/SWCNTs/Al2O3/InP structure. The light absorption is enhanced by the localized surface plasmon resonance (LSPR) effect from Ag NPs and the quantum confinement effect from MoS2 QDs. An Al2O3 thin film serves as a passivation layer to suppress dark current. The device achieves a responsivity as high as 414.5 mA/W at 1 V and a detectivity of 4.07 & times; 10(10) Jones at 0.05 V. The device also responds rapidly, exhibiting a rise time of 2.4 mu s and a fall time of 36 mu s. Furthermore, successful optical transmission experiments have been conducted using this photodetector.

Quasi-zero-stiffness (QZS) vibration isolators achieve a low minimum isolation frequency (fiso). However, their performance is usually optimized for a nominal payload and may degrade when the supported mass varies. Existing strategies mainly tune parameters within a fixed configuration, limiting performance over a wide payload range. This work proposes a novel lever-type QZS isolator and investigates its response under variable payload using three configurations: the reference linkage isolator (RLI), the lower-link inertial configuration (LLI), and the upper-link inertial configuration (ULI). A nonlinear dynamic model shows that the configurations establish different inertial-coupling paths and transmissibility characteristics: the RLI response decays continuously, whereas the LLI and ULI exhibit attenuation valleys and finite high-frequency levels. Among the parameters examined, the upper-rod inclination angle is most closely associated with the transition between these transmissibility characteristics, while the others mainly tune the resonance and high-frequency levels. A configuration-selection map is constructed in the payload–geometry design space: no single configuration gives the lowest fiso over the full range, and the local payload sensitivity varies with configuration and geometry from approximately 19.7 Hz/kg to below 1 Hz/kg; a low nominal fiso does not always imply low payload sensitivity. Hybrid auxiliary-mass allocation balances fiso and attenuation depth. Prototype experiments under two payloads support the configuration influence on fiso and its payload dependence. The auxiliary-mass configuration can thus be selected at the design stage according to the expected payload range, adding a design degree of freedom for passive low-frequency QZS isolation.

In recent years, near infrared photodetectors with high responsivity, superior detectivity, and fast response speed are in urgent demand for optoelectronic applications. Herein, by integrating single-walled carbon nanotubes (SWCNTs) with InGaAs, a high-performance hetero-structure photodetector with SWCNTs/Graphene/Al2O3/InGaAs structure is constructed. Systematic photoelectric characterization reveals that the device achieves a responsivity of 342.9 mA/W and a specific detectivity of 2.01 & times; 10(10) Jones at 1064 nm. Moreover, the photodetector exhibits excellent response speed, with rise and fall times of 10.5 mu s and 52.5 mu s at 4 kHz. These findings prove that the hybrid structure can effectively boost the performance of photodetectors, which provides a new approach for the innovation and optimization of photodetection devices.

article presents a Ag nanoparticles (NPs)/MoS2 quantum dots (QDs)/single-walled carbon nanotubes (SWCNTs)/Si photodetector operating in the near-infrared (NIR) region. The QDs and metal NPs are combined on the prepared photodetector to improve the performance through the optical absorption enhancement of QDs and the local surface plasmon resonance effect of metal NPs. Meanwhile, the speed of the device is improved by the high mobility of SWCNTs. At -1 V, the responsivity of the photodetector is 454.7 mA/W for the 808-nm laser and 347.5 mA/W for the 1064-nm laser. The detectivity of this photograph detector reaches 2.75 x 10(11) Jones at 808 nm and 2.12 x 10(11) Jones at 1064 nm. It also has a good response time under high-frequency illumination, with a rise time of 2.5 mu s and a fall time of 62 mu s. Such Ag NPs/MoS2 QDs/SWCNTs/Si heterostructured photodetectors have high performance and can be widely used for NIR photodetection.

As a kind of 1-D material, single-walled carbon nanotubes (SWCNTs) are extensively studied for application in near-infrared (NIR) photodetector due to their excellent infrared absorption, suitable bandgap and high charge carrier mobility. The combination of SWCNTs with bulk semiconductors has been demonstrated to exhibit a good photoelectric performance in the NIR region. This paper presents a NIR photodetector with silver nanoparticles (Ag NPs)/SWCNTs/Al2O3/In0.53Ga0.47As structure. The localized surface plasmon resonance (LSPR) caused by Ag NPs could enhance the light absorption of the photodetector. The Al2O3 layer was inserted as the passivation layer in order to reduce the contact defects between SWCNTs and In0.53Ga0.47As. Under the 1064 nm incident light, the device exhibits a good optical response. The responsivity and detectivity are up to 244.1 mA/W and 1.49 x 1010 Jones at -1V, respectively. In addition, the rise and fall time are 10 mu s and 8 mu s. Based on the excellent optoelectronic performance of the device, wireless optical communication in NIR region has been achieved. The results show the promising perspective and applications of the presented structure for NIR photodetection.

In recent years, photodetectors have been extensively studied. In this paper, single-walled carbon nanotubes (SWCNTs) were combined with GaAs materials to investigate the performance of SWCNTs/Graphene/GaAs photodetectors. We measured the optical response of the device at 808 nm. The responsivity was up to 185.16 mA center dot W-1, and the detectivity was 1.42 x 1010 Jones. Meanwhile, the device possessed a fast response with rise/ fall time of 4.6 mu s/30.8 mu s at 10 kHz. The results provide a new avenue for the application of near-infrared photodetectors with SWCNTs/GaAs hybrid structures.

Quantum-correlated interferometer is an emerging tool in quantum technology that offers classical-limit-breaking phase sensitivity. However, to date, there exists a configurational bottleneck for its practicability due to the low phase-sensing power limited by the current detection strategies. Here, we establish an innovative development termed as "quantum twin interferometer" with dual pairs of entangled twin beams arranged in the parallel configuration, allowing full exploitation of the quantum resource through the configuration of entangled detection. We observe the distributed phase sensing with 3-decibel quantum noise reduction in phase-sensing power at the level of milliwatts, which advances the record of signal-to-noise ratio so far achieved in photon-correlated interferometers by three orders of magnitude. The developed techniques in this work can be used to revolutionize a diversity of quantum devices requiring phase measurement.

This article presents Ag nanoparticles (NPs)/single-walled carbon nanotubes (SWCNTs)/ Graphene/Si photodetector (PD) operating in the near-infrared (NIR) region. The metal NPs are combined on the prepared PD to improve performance through the local surface plasmon resonance (LSPR) effect. Meanwhile, the speed of the device is improved by the high mobility of SWCNTs. Moreover, monolayer graphene improves the contact between SWCNTs and Si, which further promotes the speed of the device. At -1 V, the responsivity of PD is 276 mA/W for the 808 nm laser and 493 mA/W for the 1064 nm laser. The detectivity of this PD reaches 1.60x10(11) Jones at 808 nm and 2.87x10(11) Jones at 1064 nm. It also has a good response time under 1064 nm illumination, with the rise time of 2.33 mu s and the fall time of 16.0 mu s. Due to its good performance, it can be practically applied in optical communication systems to achieve signal transmission through optoelectronic conversion. Such Ag NPs/SWCNTs/Graphene/Si heterostructured PDs with high performance and high speed can be widely used for NIR photodetection.

At present, combining low-dimensional nanomaterials with high-dimensional nanomaterials is an effective way to enhance the performance of photodetectors. Single-walled carbon nanotubes (SWCNTs) are 1-D materials with high mobility and infrared absorption ability, as well as suitable energy band structures for combining with bulk semiconductors, which can effectively improve the performance of near-infrared photodetectors. In this article, a near-infrared photodetector with SWCNTs/graphene/Al2O3/n-Ge structure is constructed. Utilizing the nature of SWCNTs, the device has a large improvement in the responsivity. The contact defects between graphene and Ge are reduced with the help of Al2O3. The device has a good optical response with a maximum responsivity of 515.4 mA/W at 1064 nm, a detection rate of 6.25 x 10(10) Jones, and a rise-fall time of 13.5 and 36.5 mu s, providing a new way for the application of SWCNTs in near-infrared photodetectors.

In the past decade, graphene-based near infrared photodetectors (NIR PDs) have attracted attention for their high response speed and high responsivity. As a promising graphene-based nanostructure, the InGaAs/Al2O3/gra-phene device has been proven to have important applications in the detection of the near infrared light. The monolayer graphene and a thin Al2O3 layer could improve the device performance. However, the device degraded the current-voltage (I-V) characteristics. To enhance the resistance of this Schottky nanostructure NIR PD to the irreversible degradation, a layer of p-InP under the SiNx is expected to reduce the defects and enhance the absorption of NIR light. In this work, the Schottky nanostructure NIR PD with the InP layer has a high detectivity of 2.3(13) cm Hz(1/2) W-1, a high response speed of 557 ns/3.22 mu s, and a high responsivity of 11.23 A/W at-1.5 V and 1.32 A/W at 0 V to 1550 nm infrared light, which is even larger than that of the metal -oxidation-semiconductor (MOS) structure. The wavelength-responsivity (lambda-R) characteristics measured by different infrared lasers ranging from 808 nm to 1870 nm indicated a wide response spectrum. Moreover, the phenomenon of the reverse photocurrent was observed and analyzed.

This paper introduces a PbS quantum dots (QDs)/graphene/Si near-infrared (NIR) photodetector. The excellent infrared sensitivity of PbS QDs enables the device to work in the near-infrared band. At the same time, the high mobility of graphene to carriers also improves the performance of the device. The local electric field is enhanced by spin-coating a layer of silver nanoparticles (Ag NPs) on the surface of the device, thereby increasing the photocurrent of the device. The addition of silver nanoparticles improves the performance of PbS QDs/graphene/Si near-infrared photodetectors, and the photodetector has a high responsivity of 0.15 A/W for 1550 nm incident light. Under high-frequency illumination, there is still a good response time. This high-performance PbS QDs/graphene/Si structure photodetector can be widely used in near-infrared photodetection.

The light absorption enhancement ability of quantum dots (QDs) and the localized surface plasmon resonance (LSPR) effect of metal nanoparticles (NPs) can effectively improve the performance of photodetectors. In this paper, an Ag NPs and MoS 2 QDs double modified graphene/GaAs near-infrared photodetector is investigated. The performance of the detector is improved by adopting the LSPR effect of Ag NPs and the dielectric confinement effect of MoS 2 QDs. After subsequent testing and analysis, the photodetector responsivity is 21.1 mA W −1 and the detectivity is 8.4 × 10 12 cm Hz 1/2 W −1 at 808 nm wavelength; the responsivity and detectivity at 1064 nm wavelength can be up to 18.4 mA W −1 and 3.39 × 10 12 cm Hz 1/2 W −1 , respectively. At the same time, under a 4 kHz pulsed illumination, the rise time and fall time are 15.87 μ s and 89.95 μ s respectively. Compared with previous devices, the new device has lower dark current and higher detectivity while having good responsivity and response time.

The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al 2 O 3 between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.

In this paper, a graphene/GaAs near-infrared photodetector with Ag nanoparticles (NPs) is fabricated and the photoelectric characteristics of the device under near-infrared light is investigated. By spin-coating a 30 nm Ag NPs layer on the surface of the device, the local surface plasmon resonance (LSPR) of the Ag NPs can enhance the absorption of near-infrared light, thereby improving the sensitivity of the device. Compared with the device without Ag NPs, the responsivity of the device is significantly increased to 96 mA/W (increased by 1.6 times) under zero bias voltage at 808 nm near infrared light, the maximum detectivity of the device can be up to 4.72 × 1011 cmHz1/2W−1. In addition, the response time (τr) and recovery time (τf) of the device are 28.21 μs/68.11 μs. The quantum efficiency of the detector is increased from 37% to 84% compared with the device without Ag NPs. This result shows the graphene/GaAs photodetectors have a broad application prospect in the field of near-infrared detection.

In this paper, the InGaAs/InP separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD) with a heterojunction multiplication layer and a hybrid absorption layer has been simulated. Due to the effect of the heterojunction multiplication layer on avalanche photodiode collision ionization, compared with the traditional structure, the break-down voltage and the punch-through voltage of the structure with a heterojunction multiplication layer was reduced by 2 V. By optimizing the thickness of the heterojunction multiplication layer, the electrical performance of the device has been enhanced. The avalanche gain was 193.37, which is much higher than the conventional structure (51.65). Besides, the thickness of InP in the heterojunction multiplication layer affects the capacitance characteristics of the device.

The heterojunction photodetector based on zero-dimensional (0-D) PbS quantum dots (QDs) and two-dimensional (2-D) graphene combines the strong light absorption capacity of QDs, adjustable band gap, simple process and other advantages with the higher carrier mobility of graphene, which significantly improves the responsivity and detection rate of the photodetector. In the paper, a photodetector based on the combination of P-InP substrate, graphene and PbS QDs is explored. With the help of Al2O3 passivation of InP substrate, ligand replacement method passivation of PbS QDs, the device shows a unique photoresponse at 808 nm, reaching a detection rate of 145 mAW(-1) responsivity under a bias of 1.1 V. The work is expected to provide a strategy for manufacturing and investigating high-performance and low-cost hybrid photodetectors.

Two-dimensional (2D) materials have attracted many attentions since they have been discovered. In recent years, various photodetectors made of 2D materials have been continuously reported. In this study, a near-infrared photodetector is fabricated by consisting of a heterojunction of MoS2 quantum dots (QDs) and p-type GaAs substrate. In the subsequent test, it is found that the device has response to three wavelengths of 808 nm, 1064 nm, and 1310 nm, where the 1064 nm band response is the highest. Further test and comparison also find that the insertion of Al2O3 passivation layer with 2 nm thickness at the interface between MoS2 QDs and GaAs and thermal annealing of MoS2 QDs can improve the performance of the device. Finally, under the bias condition of -0.1 V, the response can reach 143.2 mA.W-1, and the detection rate is 3.32 x 10(10) cm.Hz(1/2).W-1. Under the signal frequency of 2 kHz, the rise time and fall time of the device are 12 mu s and 32 mu s, respectively; at 4 kHz, the low response time of 24 mu s and 74 mu s can be achieved, respectively.