We introduce an efficient first-principles framework for simulating angle-resolved photoemission spectroscopy (ARPES) by computing photoelectron states as solutions of the Kohn-Sham equation with scattering boundary conditions. This approach is formally equivalent to the Lippmann-Schwinger formalism but offers superior computational efficiency and direct integration with plane-wave or real-space density functional theory. By enabling direct calculation of photoemission matrix elements, our method bridges the gap between intrinsic electronic properties and experimental ARPES spectra. We demonstrate its accuracy through circular dichroism ARPES simulations for monolayer graphene and bulk 2H-WSe_2, achieving excellent agreement with experimental data and highlighting the critical role of pseudopotentials in describing high-energy photoelectron scattering. Our results establish a robust and accessible route for quantitative ARPES modeling, paving the way for advanced studies of orbital textures, many-body effects, and time-resolved photoemission.

The quantum geometric properties of Bloch electrons fundamentally govern light-matter interactions and optical selection rules in solids. In semiconducting transition-metal dichalcogenides, circularly polarized excitation near the band edge enables valley-selective interband transitions, providing the basis for valleytronics. While nonlinear optical protocols are being developed to manipulate and probe valley selection rules, they largely rely on band-edge transitions that proceed via virtual intermediate states. Here, we demonstrate a doubly resonant cascaded nonlinear pathway from the valence band to high-lying states, mediated by a real intermediate state whose participation substantially reshapes the valley optical selection rules. Using time- and angle-resolved extreme-ultraviolet photoemission spectroscopy in combination with a time-dependent Lindblad master-equation formalism, we show that this cascaded nonlinear photoexcitation produces a substantially enhanced high-lying valley polarization compared to the conventional linear optical response near the band edge. The extension of the quantum-geometry-based selection rules to the nonlinear regime and high-lying bands offers new perspectives for ultrafast valleytronics and should play a determinant role in strong-field-driven phenomena in quantum materials.

Excitons are key quasiparticles determining the optical properties of solids. As such, they can be utilized to coherently control the electronic structure of materials using optical femtosecond pulses. Identifying the decoherence mechanism during the early non-equilibrium dynamics is crucial to achieve light-induced band-structure engineering in semiconductors. Here, we generate excitons in the direct band gap semiconductor black phosphorus with a resonant mid-infrared photoexcitation. Using time- and angle-resolved photoemission spectroscopy, we track their complex ultrafast dynamics on the few-picosecond time scale. We develop a quantum-kinetic theoretical framework to model the decoherence of excitons into dark excitons via phonon scattering. By combining simulation and experiment, we quantify key parameters describing the early dynamics of the excitons. Our work highlights phonon-mediated intravalley scattering as a fundamental limitation for coherent exciton phenomena in single-valley semiconductors.

Addressing the many-body electronic-structure problem is a central goal of modern condensed-matter physics. Paramagnetic Mott insulators, in particular, have long represented a challenge for standard approaches, such as density-functional theory. Historically, these systems have been tackled either by considering many-body dynamics, as in the case of dynamical mean-field theory (DMFT), or, more recently, by invoking a polymorphous description consisting of large supercells populated with static symmetry-broken motifs whose spatial average restores the paramagnetic state. Inspired by these viewpoints, we introduce the on-site dephased ensemble (DE) approximation, in which the local electronic-structure problem is described by a thermal ensemble of all accessible local static solutions; this gives rise to a strong frequency dependence of the local electronic self-energy, as seen in DMFT or in the coherent-potential approximation of disordered alloys. We show that the DE successfully recovers defining hallmarks of strongly correlated Mott systems, both in terms of the self-energy as well as the persistence of local moments in time, in quantitative agreement with DMFT. By bypassing expensive quantum Monte Carlo solvers or large supercell calculations, this approach offers efficient routes to treating paramagnetic Mott systems in a first-principles setting, and highlights a deeper connection between the physics of strong correlations and that of disorder.

The nonequilibrium Green's function (NEGF) formalism is a powerful tool to study the nonequilibrium dynamics of correlated lattice systems, but its applicability to realistic system sizes and long timescales is limited by unfavorable memory scaling. While compressed representations, such as the recently introduced quantics tensor train (QTT) format, alleviate the memory bottleneck, the efficiency of QTT-NEGF calculations is hindered by poor initializations and slow or unstable convergence of globally updated self-consistent iterations. Here, we introduce a predictor-corrector solver for QTT-NEGF simulations that combines dynamic mode decomposition (DMD) extrapolation with the recently proposed causality-preserving block-time-stepping updates. The DMD predictor supplies accurate initial guesses that reduce the iteration count of the calculation, while the blocktime-stepping correction ensures stable convergence even for long propagation intervals. Applying this method to the Hubbard model on a 32 x 32 lattice within the nonequilibrium GW approximation, we demonstrate stable propagation up to times of tmax = 512 inverse hoppings, surpassing the capabilities of both matrix-based implementations and previous QTT solvers. Our contribution is twofold. (i) We integrate tensor dynamic mode decomposition with the QTT representation, which establishes a general framework that is not limited to NEGFs. (ii) We demonstrate its practical benefits in NEGF simulations, where it enables stable and efficient access to unprecedented timescales at high momentum resolution, thereby enabling controlled studies of long-time dynamics and nonequilibrium steady states in correlated lattice systems.

Electromagnetic fields induce electronic transitions, generate currents, and fundamentally alter quantum states of matter through strong light-matter interactions. As one established route, Floquet engineering provides a powerful framework to dress electronic states with time-periodic fields, giving rise to quasistationary Floquet states. With increasing field strength, nonperturbative responses of the dressed states emerge, yet their nonlinear dynamics remain challenging to interpret. In this work, we explore the emergence of nonadiabatic Landau-Zener transitions among Floquet states in Cu(111) under intense optical fields. With increasing field strength, we reveal a transition from perturbative dressing to a regime where nonadiabatic tunneling among Floquet states dominate the electronic dynamics. These insights are obtained through interferometrically time-resolved multiphoton photoemission spectroscopy, which serves as a sensitive probe of transient Floquet state dynamics. Numerical simulations and the theory of instantaneous Floquet states allow us to directly examine real-time excitation pathways in this nonperturbative photoemission regime. Our results clarify different light-dressing regimes in materials and provide microscopic insight relevant to ultrafast light wave electronics.

We compare two complementary theoretical approaches to compute and interpret Floquet sidebands in periodically driven quantum materials: a first-order perturbative approach (first-order perturbative Born approximation, PB1) and time-dependent nonequilibrium Green's functions (tdNEGF). Using graphene as a model Dirac system, we disentangle in pump-probe setups Floquet-dressed initial states, Volkov-dressed final states (also known as laser-assisted photoelectric effect, LAPE), and their interference. We quantify how photoemission matrix elements, polarization, incidence angle, and near-surface screening shape the momentum-resolved sideband intensity observed in tr-ARPES. PB1 yields an analytical expression for the momentum-dependent sideband intensity, and for graphene it captures the correct symmetry trends, such as the magnitude of the intensities when considering the interference between the Floquet and Volkov states and photoemission matrix elements. tdNEGF reproduces the full energy-momentum-resolved spectra, including hybridization gaps and spectral-weight redistribution. We find qualitative agreement between PB1 and tdNEGF once matrix elements are included; quantitative differences arise near hybridization regions and at specific angles where higher-order processes and self-energies are essential. Thus, for systems with simple band structures and away from these regions, the two approaches can be used in a complementary way.

Germanium-silicon-germanium (Ge/Si_xGe_1-x) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence bands. However, the momentum-resolved valence-band structure of buried strained Ge quantum wells has so far been inferred only indirectly. Here we use soft X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to directly probe the electronic structure of strained Ge quantum wells embedded in SiGe barriers. We resolve strain-split and size-quantized valence subbands, determine their heavy-hole, light-hole and split-off composition, and measure the valence-band offset at the Ge/SiGe heterojunction. Comparison with ab initio calculations shows that an accurate description requires explicit inclusion of the confinement potential imposed by the SiGe barrier, which plays a decisive role in determining the dispersion, ordering and mixing of the hole states. Our results provide the first direct experimental picture of how strain and confinement determine the valence-band structure of Ge quantum wells, establishing a foundation for predictive modelling of hole-spin qubits and high-mobility devices based on group-IV heterostructures.

In solids, disorder is conventionally regarded as detrimental to coherence. It typically localizes and dampens collective excitations, as exemplified by Anderson localization or the broadening of magnetic modes in systems lacking long-range order. While high-entropy materials are specifically designed to harness disorder and stabilize homogeneous mixed-phase structures that can display unique properties, this same disorder is nonetheless expected to preclude the formation of coherent magnetic excitations. To test the limits of this picture, we selected the antiferromagnetic system YBaCuFeO5, as it features two distinct transition metal atoms with significantly different magnetic moments, rendering its spin dynamics exceptionally sensitive to local atomic ordering. Combining resonant inelastic x-ray scattering and linear spin wave theory, we reveal a surprising paradox: YBaCuFeO5 exhibits an unexpected, entropy-driven mixed phase, in which disorder, rather than reducing the lifetime of the collective excitations, favors coherence. In this mixed phase, the spin waves remain dispersive, markedly distinct from those expected for an ordered ground state, and exhibit well-defined acoustic and optical branches separated by a large optical gap. These results demonstrate that in entropy-stabilized magnets, disorder can favor coherent collective modes previously thought to be exclusive to low-entropy systems.

Floquet control of band topology is a central theme in ultrafast quantum materials science. Established experimental probes of light-induced topological states include ultrafast transport and time- and angle-resolved photoemission spectroscopy, each with important strengths but also well-known limitations. Here we propose ultrafast terahertz scanning tunneling microscopy (THz-STM) as a real space energy-resolved probe of Floquet physics. We show that THz-STM enables direct local detection of bulk Floquet gaps and distinct Floquet edge state signatures. We derive a nonequilibrium Green's-function formalism for time-dependent tunneling that directly extends standard STM theory and provides an intuitive interpretation of rectified ultrafast tunneling currents. We apply the approach to bulk graphene and graphene nanoribbons of variable width. For the bulk, we show that THz-STM provides direct spectroscopic access to Floquet-induced gap openings, and we contrast pulsed pump-probe protocols with the continuous-wave Floquet steady-state limit. For finite ribbons, we demonstrate time- and space-resolved imaging of Floquet-induced topological edge states and identify the ribbon-width scale below which edge state protection breaks down. We further show how band structures of graphene nanoribbons and Floquet chiral edge modes can be reconstructed via Floquet quasiparticle interference. Finally we demonstrate that chiral impurities that break time-reversal symmetry induce characteristic spatial THz-STM signatures that can be used as a direct probe of Floquet edge state chirality.

Nonequilibrium Green's functions provide a powerful framework for studying quantum many-body dynamics including the laser-induced dynamics in solids. The Non-Equilibrium Systems Simulation package (NESSi) offers an efficient platform for such simulations, ranging from perturbative approaches like nonequilibrium GW to nonequilibrium dynamical mean-field theory. However, simulations based on nonequilibrium Green's functions become computationally demanding when the dynamics span a large temporal range, such as from sub-femtosecond electron dynamics to the picosecond dynamics of collective modes. Due to the memory integral in the Kadanoff-Baym equations, which serve as equations of motion for nonequilibrium Green's functions, the computational cost scales as 𝒪(N_t^3) with the number of timesteps N_t, and the memory requirement scales as 𝒪(N_t^2). In this work, we extend NESSi by incorporating techniques that aim to overcome this bottleneck: (i) By truncating the memory integrals in the KBE to a maximum of N_c timesteps, the computational complexity is reduced to 𝒪(N_tN_c^2), and the memory requirement to 𝒪(N_c^2). Provided that the results converge with respect to the cutoff N_c, memory truncation allows to extend the simulations to significantly longer times. (ii) We introduce functionalities to describe nonequilibrium steady states, i.e. time-translationally invariant nonequilibrium states. Such states are relevant for transport settings, and they provide an approximate description of slowly evolving (prethermal) nonequilibrium states.

We present a native approach for realizing multi-qubit parity phase gates in neutral atom systems through global phase modulation of a Rydberg excitation laser. By shaping the temporal profile of the laser's phase, we enable high fidelity, time efficient entangling operations between multiple qubits without requiring individual qubit addressing. To mitigate intrinsic noise sources including spontaneous decay and motional effects, we develop a noise-aware optimal control framework that reduces gate errors under the presence of noise while maintaining smooth pulse profiles suitable for experimental implementation. In addition to equidistant qubit arrangements, we explore the impact of non-equidistant atomic configurations, where interaction inhomogeneity becomes significant. In these cases, the flexibility of our control approach helps to compensate for such variations, supporting reliable gate performance across different spatial layouts. These results facilitate the practical implementation of complex, multi-qubit quantum operations in near-term neutral atom quantum processors.

Understanding nonequilibrium electron-phonon interactions at the microscopic level and on ultrafast timescales is a central goal of modern condensed matter physics. Combining time- and angle-resolved extreme ultraviolet photoemission spectroscopy with constrained density functional perturbation theory, we demonstrate that photoexcited carrier density can serve as a tuning knob to enhance electron-phonon interactions in nonequilibrium conditions. Specifically, nonequilibrium band structure mapping and valley-resolved ultrafast population dynamics in semiconducting transition-metal dichalcogenide 2H-MoTe_{2} reveal band-gap renormalizations and reduced population lifetimes as photoexcited carrier densities increase. Through theoretical analysis of photoinduced electron and phonon energy and linewidth renormalizations, we attribute these transient features to nonequilibrium modifications of electron-phonon coupling matrix elements. This Letter advances our understanding of microscopic coupling mechanisms enabling control over relaxation pathways in driven solids.

The exploration of ultrafast phenomena is a frontier of condensed matter research, where the interplay of theory, computation, and experiment is unveiling new opportunities for understanding and engineering quantum materials. With the advent of advanced experimental techniques and computational tools, it has become possible to probe and manipulate nonequilibrium processes at unprecedented temporal and spatial resolutions, providing insights into the dynamical behavior of matter under extreme conditions. These capabilities have the potential to revolutionize fields ranging from optoelectronics and quantum information to catalysis and energy storage. This roadmap captures the collective progress and vision of leading researchers, addressing challenges and opportunities across key areas of ultrafast science and condensed matter. Contributions in this roadmap span the development of ab initio methods for time-resolved spectroscopy, the dynamics of driven correlated systems, the engineering of materials in optical cavities, and the adoption of FAIR principles for data sharing and analysis. Together, these efforts highlight the interdisciplinary nature of ultrafast research and its reliance on cutting-edge methodologies, including quantum electrodynamical density-functional theory, correlated electronic structure methods, nonequilibrium Green’s function approaches, quantum and ab initio simulations.

The orbital angular momentum (OAM) of electron states is an essential ingredient for topological and quantum geometric quantities in solids. For example, Dirac surface states with helical spin- and orbital-angular momenta are a hallmark of a 3D topological insulator. Angle-resolved photoemission spectroscopy (ARPES) with variable circular light polarization, known as circular dichroism (CD), has been assumed to be a direct probe of OAM and, by proxy, of the Berry curvature of electronic bands in energy- and momentum-space. Indeed, topological surface states have been shown to exhibit angle-dependent CD (CDAD), and more broadly, CD is often interpreted as evidence of spin-orbit coupling. Meanwhile, it is well-established that CD originates from the photoemission matrix elements, which can have extrinsic contributions related to the experimental geometry and the inherently broken inversion symmetry at the sample surface. Therefore, it is important to broadly examine CD-ARPES to determine the scenarios in which it provides a robust probe of intrinsic material physics. We performed CD-ARPES on the canonical topological insulator Bi_2Se_3 over a wide range of incident photon energies. Not only do we observe angle-dependent CD in the surface states, as expected, but we also find CD of a similar magnitude in virtually all bulk bands. Since OAM is forbidden by inversion symmetry in the bulk, we conclude this originates from symmetry-breaking in the photoemission process. Comparison with theoretical calculations supports this view and suggests that hidden OAM - localized to atomic sites within each unit cell - contributes significantly. Additional effects, including inter-atomic interference and final-state resonances, are responsible for the rapid variation of the CDAD signal with photon energy.

The interplay of electronic charge, spin, and orbital currents, coherently driven by picosecond long oscillations of light fields in spin-orbit coupled systems, is the foundation of emerging terahertz lightwave spintronics and orbitronics. The essential rules for how terahertz fields interact with these systems in a nonlinear way are still not understood. In this work, we demonstrate a universally applicable electronic nonlinearity originating from spin-orbit interactions in conducting materials, wherein the interplay of light-induced spin and orbital textures manifests. We utilized terahertz harmonic generation spectroscopy to investigate the nonlinear dynamics over picosecond timescales in various transition metal films. We found that the terahertz harmonic generation efficiency scales with the spin Hall conductivity in the studied films, while the phase takes two possible values (shifted by π), depending on the d-shell filling. These findings elucidate the fundamental mechanisms governing non-equilibrium spin and orbital polarization dynamics at terahertz frequencies, which is relevant for potential applications of terahertz spin- and orbital-based devices.

Recent advances in the field of condensed-matter physics have unlocked the potential to realize and control emergent material phases that do not exist in thermal equilibrium. One of the most promising concepts in this regard is Floquet engineering, the coherent dressing of matter via time-periodic perturbations. However, the broad applicability of Floquet engineering to quantum materials is still unclear. For the paradigmatic case of monolayer graphene, the theoretically predicted Floquet-induced effects, despite a seminal report of the light-induced anomalous Hall effect, have been put into question. Here, we overcome this problem by using electronic structure measurements to provide direct experimental evidence of Floquet engineering in graphene. We report light-matter-dressed Dirac bands by measuring the contribution of Floquet sidebands, Volkov sidebands, and their quantum path interference to graphene's photoemission spectral function. Our results finally demonstrate that Floquet engineering in graphene is possible, paving the way for the experimental realization of the many theoretical proposals on Floquet-engineered band structures and topological phases.

Upon time-periodic driving of electrons using electromagnetic fields, the emergence of Floquet-Bloch states enables the creation and control of exotic quantum phases. In transition metal dichalcogenides, broken inversion symmetry within each monolayer results in Berry curvature at the K and K' valley extrema, giving rise to chiroptical selection rules that are fundamental to valleytronics. Here, we bridge the gap between these two concepts and introduce Floquet-Bloch valleytronics. Using time- and polarization-resolved extreme ultraviolet momentum microscopy combined with state-of-the-art ab initio theory, we demonstrate the formation of valley-polarized Floquet-Bloch states in 2H-WSe2 upon below-bandgap driving with circularly polarized light pulses. We investigate quantum-path interference between Floquet-Bloch and Volkov states, revealing its dependence on the valley pseudospin and light polarization. Extreme ultraviolet photoemission circular dichroism in these non-equilibrium settings reveals the potential for controlling the orbital character of Floquet-engineered states. These findings link Floquet engineering and quantum-geometric light-matter coupling in two-dimensional materials.

Crystalline solids can become band insulators due to fully filled bands, or Mott insulators due to strong electronic correlations. While Mott insulators can theoretically occur in systems with an even number of electrons per unit cell, distinguishing them from band insulators experimentally has remained a longstanding challenge. In this work, we present a unique momentum-resolved signature of a dimerized Mott-insulating phase in the experimental spectral function of Nb3Br8: the top of the highest occupied band along the out-of-plane direction kz has a momentum-space separation Δkz = 2π/d, whereas that of a band insulator is less than π/d, where d is the average interlayer spacing. Identifying Nb3Br8 as a Mott insulator is crucial to understand its role in the field-free Josephson diode effect. Moreover, our method could be extended to other van der Waals systems where tuning interlayer coupling and Coulomb interactions can drive a band- to Mott-insulating transition.

Motivated by a recent experiment on a square-lattice Rydberg atom array realizing a long-range dipolar XY model [Chen et al., Nature (2023)], we numerically study the model's equilibrium properties. We obtain the phase diagram, critical properties, entropies, variance of the magnetization, and site-resolved correlation functions. We consider both ferromagnetic and antiferromagnetic interactions and apply quantum Monte Carlo and pseudo-Majorana functional renormalization group techniques, generalizing the latter to a U(1) symmetric setting. Our simulations open the door to directly performing many-body thermometry in dipolar Rydberg atom arrays. Moreover, our results provide new insights into the experimental data, suggesting the presence of intriguing quasi-equilibrium features, and motivating future studies on the non-equilibrium dynamics of the system.