In this work buried channel devices were successfully integrated in HKMG. Analog, noise and reliability performance have been reported and compared to a surface device. The devices were processed to have the same V Tsat for the nominal geometry of a corresponding surface device. Advantages and drawbacks of the two integrations are discussed and explained with the support of calibrated TCAD simulations.

We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.

The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor f T and increases varactor tunning range. However, it can actually decrease f max . We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher f T . However, f max is sensitive to gate resistance and PolySiON has an advantage here.

The impact of compressive and tensile stress on CMOS performance of high-k/metal-gate (HKMG) transistors is studied for < 1 0 0 > and < 1 1 0 > oriented silicon and SiGe channels. The (1 0 0)/< 1 1 0 > channel direction is found to be more stress sensitive for both N- and PMOS whereas the (1 0 0)/< 1 0 0 > oriented transistor has a higher initial hole mobility. These results recommend to use the (1 0 0)/< 1 1 0 > channel orientation for high performance application due to the high drive current gain and (1 0 0)/< 1 0 0 > channel orientation for low power/low cost applications where no stress elements are included to ease the overall process complexity and to decrease costs. SOC level test design implementations show consistent yield as well as improved performance. (c) 2013 Elsevier Ltd. All rights reserved.