Kondo lattices are ideal testbeds for the exploration of heavy-fermion quantum phases of matter. While our understanding of Kondo lattices has traditionally relied on complex bulk f -electron systems, transition metal dichalcogenide heterobilayers have recently emerged as simple, accessible and tunable 2D Kondo lattice platforms where, however, their ground state remains to be established. Here we present evidence of a coherent ground state in the 1T/1H-TaSe 2 heterobilayer by means of scanning tunneling microscopy/spectroscopy at 340 mK. Our measurements reveal the existence of two symmetric electronic resonances around the Fermi energy, a hallmark of coherence in the spin lattice. Spectroscopic imaging locates both resonances at the central Ta atom of the charge density wave of the 1T phase, where the localized magnetic moment is held. Furthermore, the evolution of the electronic structure with the magnetic field reveals a non-linear increase of the energy separation between the electronic resonances. Aided by ab initio and auxiliary-fermion mean-field calculations, we demonstrate that this behavior is inconsistent with a fully screened Kondo lattice, and suggests a ground state with magnetic order mediated by conduction electrons. The manifestation of magnetic coherence in TMD-based 2D Kondo lattices enables the exploration of magnetic quantum criticality, Kondo breakdown transitions and unconventional superconductivity in the strict two-dimensional limit.

Chemical substitution is a promising route for the exploration of a rich variety of doping- and/or disorder-dependent collective phenomena in low-dimensional quantum materials. Here we show that transition metal dichalcogenide alloys are ideal platforms to this purpose. In particular, we demonstrate the emergence of superconductivity in the otherwise metallic single-layer TaSe 2 by minute electron doping provided by substitutional W atoms. We investigate the temperature and magnetic field dependence of the superconducting state of Ta 1-δ W δ Se 2 with electron doping ( δ ) using variable temperature (0.34–4.2 K) scanning tunneling spectroscopy (STS). We unveil the emergence of a superconducting dome spanning 0.003 < δ < 0.03 with a maximized critical temperature of 0.9 K, a significant increase from that of bulk TaSe 2 ( T C = 0.14 K). Superconductivity emerges from an increase of the density of states (DOS) as the Fermi surface approaches a van Hove singularity due to doping. Once the singularity is reached, however, the DOS decreases with δ , which gradually weakens the superconducting state, thus shaping the superconducting dome. Lastly, our doping-dependent measurements suggest the development of a Coulomb glass phase triggered by disorder due to W dopants.

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, the atomic-scale evolution of the electronic ground state of a monolayer of Nb1- δ Moδ Se2 across the entire alloy composition range (0 < δ < 1) is investigated using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe2 to MoSe2 ) is studied. The measurements enable extraction of the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, it is demonstrated that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder and further shown that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. Mo doping is shown to decrease the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. These results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.

In certain unconventional superconductors with sizable electronic correlations, the availability of closely competing pairing channels leads to characteristic soft collective fluctuations of the order parameters, which leave fingerprints in many observables and allow to scrutinize the phase competition. Superconducting layered materials, where electron-electron interactions are enhanced with decreasing thickness, are promising candidates to display these correlation effects. In this work, we report the existence of a soft collective mode in single-layer NbSe_2, observed as a characteristic resonance excitation in high resolution tunneling spectra. This resonance is observed along with higher harmonics, its frequency Ω/2Δ is anticorrelated with the local superconducting gap Δ, and its amplitude gradually vanishes by increasing the temperature and upon applying a magnetic field up to the critical values (T_C and H_C2), which sets an unambiguous link to the superconducting state. Aided by a microscopic model that captures the main experimental observations, we interpret this resonance as a collective Leggett mode that represents the fluctuation towards a proximate f-wave triplet state, due to subleading attraction in the triplet channel. Our findings demonstrate the fundamental role of correlations in superconducting 2D transition metal dichalcogenides, opening a path towards unconventional superconductivity in simple, scalable and transferable 2D superconductors.

We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunneling microscopy experiments with density functional theory calculations. A ubiquitous defect, imaged at negative bias as a bright dumbbell extending over several nanometers, is shown to arise from a substitutional Sn impurity in the second sublayer. Another frequently observed defect type is identified as arising from an interstitial Sn atom; this defect can be switched to a more stable configuration consisting of a Sn substitutional defect + P adatom, by application of an electrical pulse via the STM tip. DFT calculations show that this pulse-induced structural transition switches the system from a non-magnetic configuration to a magnetic one. We introduce States Projected Onto Individual Layers (SPOIL) quantities which provide information about atom-wise and orbital-wise contributions to bias-dependent features observed in STM images.

WO3 nanostructures have been synthesized on Au(111) through the solution-processing method. Three types of structures have been obtained: reticulated polymeric structures, two dimensional WO3 (111), and three-dimensional islands. Their electronic properties have been probed by scanning tunneling spectroscopy. The reticulated structure has a featureless spectrum. WO3 (111) shows n-type semiconducting properties with resonances corresponding to surface states arising from W 5d states. These oxide nanostructures efficiently decouple the electronic states of molecular adsorbates from the metal substrate.

The combination of 2D materials with organic molecules offer the possibility to obtain low dimensional hybrid materials with tailored properties. Black phosphorus is a monoelemental semiconducting material with a nonplanar puckered atomic structure. Here, porphyrin molecules on black phosphorus are studied and it is shown that they self‐assemble with an epitaxial relationship indicating that the molecule‐surface interaction largely dominates the molecule–molecule interaction. The atomic structure of black phosphorus is found to be at the origin of the substrate driven self‐assembly. Despite this strong interaction with molecules, the electronic coupling is found to be weak allowing the molecules to maintain the properties of their gas phase, which is the usual behavior for van der Waals materials. Therefore, the combination of the peculiar puckered structure with the van der Waals nature of black phosphorus provides this material with the ability to interact strongly enough with adsorbed molecules to drive their assembly but weakly enough to keep their electronic properties intact.

Collective electronic states such as the charge density wave (CDW) order and superconductivity (SC) respond sensitively to external perturbations. Such sensitivity is dramatically enhanced in two dimensions (2D), where 2D materials hosting such electronic states are largely exposed to the environment. In this regard, the ineludible presence of supporting substrates triggers various proximity effects on 2D materials that may ultimately compromise the stability and properties of the electronic ground state. In this work, we investigate the impact of proximity effects on the CDW and superconducting states in single-layer (SL) NbSe2 on four substrates of diverse nature, namely, bilayer graphene (BLG), SL-boron nitride (h-BN), Au(111), and bulk WSe2. By combining low-temperature (340 mK) scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we compare the electronic structure of this prototypical 2D superconductor on each substrate. We find that, even when the electronic band structure of SL-NbSe2 remains largely unaffected by the substrate except when placed on Au(111), where a charge transfer occurs, both the CDW and SC show disparate behaviors. On the insulating h-BN/Ir(111) substrate and the metallic BLG/SiC(0001) substrate, both the 3 × 3 CDW and superconducting phases persist in SL-NbSe2 with very similar properties, which reveals the negligible impact of graphene on these electronic phases. In contrast, these collective electronic phases are severely weakened and even absent on the bulk insulating WSe2 substrate and the metallic single-crystal Au(111) substrate. Our results provide valuable insights into the fragile stability of such electronic ground states in 2D materials.

Van der Waals materials provide an ideal platform to explore superconductivity in the presence of strong electronic correlations, which are detrimental of the conventional phonon-mediated Cooper pairing in the BCS-Eliashberg theory1 and, simultaneously, promote magnetic fluctuations. Despite recent progress in understanding superconductivity in layered materials, the glue pairing mechanism remains largely unexplored in the single-layer limit, where electron-electron interactions are dramatically enhanced. Here we report experimental evidence of unconventional Cooper pairing mediated by magnetic excitations in single-layer NbSe2, a model strongly correlated 2D material. Our high-resolution spectroscopic measurements reveal a characteristic spin resonance excitation in the density of states that emerges from the quasiparticle coupling to a collective bosonic mode. This resonance, observed along with higher harmonics, gradually vanishes by increasing the temperature and upon applying a magnetic field up to the critical values (TC and HC2), which sets an unambiguous link to the superconducting state. Furthermore, we find clear anticorrelation between the energy of the spin resonance and its harmonics and the local superconducting gap({\Delta}), which invokes a pairing of electronic origin associated with spin fluctuations. Our findings demonstrate the fundamental role that electronic correlations play in the development of superconductivity in 2D transition metal dichalcogenides, and open the tantalizing possibility to explore unconventional superconductivity in simple, scalable and transferable 2D superconductors.

The interaction of molecules with surfaces plays a crucial role in the electronic and chemical properties of supported molecules and needs a comprehensive description of interfacial effects. Here, we unveil the effect of the substrate on the electronic configuration of iron porphyrin molecules on Au(111) and graphene, and we provide a physical picture of the molecule-surface interaction. We show that the frontier orbitals derive from different electronic states depending on the substrate. The origin of this difference comes from molecule-substrate orbital selective coupling caused by reduced symmetry and interaction with the substrate. The weak interaction on graphene keeps a ground state configuration close to the gas phase, while the stronger interaction on gold stabilizes another electronic solution. Our findings reveal the origin of the energy redistribution of molecular states for noncovalently bonded molecules on surfaces.

Molecular switches are building blocks of potential interest to store binary information, especially when they can be organized in periodic lattices. Among the variety of possible systems, switches based on hydrogen transfer are of special importance because they allow the switching operation to occur without severe conformational change that may interfere with neighboring molecular units. We have studied the excitation process of hydrogen transfer inside porphyrin molecules assembled on a graphene surface, using a low-temperature scanning tunneling microscope. We show that this hydrogen transfer is induced by an electronic resonant tunneling process through the molecular orbitals. Using nitrogen doping of graphene, we tune the rate of hydrogen transfer by shifting the molecular orbital energies owing to the charge transfer at nitrogen dopant sites in the graphene lattice. The control of the switching process allows the storage of information inside a molecular lattice, which is demonstrated by writing an artificial pattern inside a molecular island.

Noise studies constitute an important approach to study polymer based field effect transistors (FETs) from the perspective of disorder physics as well as device application. The current fluctuations in an all organic solution-processable FET in different regimes of operation (I-V) are measured and analyzed. The intrinsic transport noise is sizable and readily observed in the current time series measurements. The ensuing current spectrum (SI(f)) exhibits a typical 1/f characteristics. It is observed that this noise amplitude scales with respect to current bias and indicative of mobility as well as number fluctuations at dielectric-semiconductor interface. FETs with leakage (lossy) dielectric layer indicate characteristic noise spectrum features which can serve as a diagnostic tool to monitor device stability.