We demonstrate an InP EAM with Si waveguides and achieve 256 Gbaud OOK, 170 Gbaud PAM4, 150 Gbaud PAM6, and 120 Gbaud PAM8 transmission over 500 meters of SMF below 6.25% OH HD-FEC threshold.

We propose and experimentally demonstrate a wideband and continuously tunable microwave photonic (MWP) phase shifter based on an active InP/InGaAsP microring resonator (MRR) incorporating two semiconductor optical amplifiers (SOAs) and a phase modulator (PM). By tuning the gain provided by the SOAs, the loss in the ring cavity can be compensated and the extinction ratio of a resonance is decreased to nearly 0 dB, while maintaining the optical phase shift range of nearly 2π within the resonance bandwidth. A theoretical analysis is performed. The key advantages of using the proposed MRR to achieve a microwave phase shifter are that the power variation at the output of the phase shifter is minimized during phase tuning and the microwave phase can be continuously tuned by tuning the PM in the MRR theoretically. The proposed phase shifter is experimentally demonstrated. A continuously tunable microwave phase shift over a phase tuning range of 291° from 5 GHz to 20 GHz by tuning the injection current to the PM is implemented. The microwave power variation is lower than 5 dB.

All-optical computing has been considered a solution for future computers to overcome the speed bottleneck encountered by the current electronic computers. High-speed optical memory is one of the key building blocks in realizing all-optical computing. In this Letter, we demonstrate an optical dynamic memory based on an amplified high Q-factor ring resonator that has the capability to achieve an infinite memory time. The optical memory uses an external pulse train to refresh the resonator, an operation in analogy to an electronic dynamic random-access memory widely used in modern computers, but at a speed that can be orders of magnitude faster. In our demonstration, a writing speed of 2.5 GHz is achieved with instant reading capability. The maximum writing speed can be as fast as 27.3 GHz if a shorter pulse is used.

Mode control in a laser cavity is critical for a stable single-mode operation of a ring laser. In this study we propose and experimentally demonstrate an electrically pumped parity-time (PT)-symmetric microring laser with precise mode control, to achieve wavelength-tunable single-mode lasing with an improved mode suppression ratio. The proposed PT-symmetric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled active microring resonators. By incorporating multiple semiconductor optical amplifiers in the microring resonators, the PT-symmetry condition can be achieved by a precise manipulation of the interplay between the gain and loss in the two microring resonators, and the incorporation of phase modulators in the microring resonators enables continuous wavelength tuning. Single-mode lasing at 1,554.148 nm with a sidemode suppression ratio exceeding 36 dB is demonstrated and the lasing wavelength is continuously tunable from 1,553.800 to 1,554.020 nm.

We experimentally demonstrate a novel four-channel wavelength division multiplexing transmitter operating at 1.3 μm wavelength employing heterogeneously integrated III-V/Si photonic circuit co-packaged with low-power 32-nm SOI CMOS driver integrated circuits (ICs). Error-free operation (BER <; 10 -12 ) has been achieved across all four channels for back-to-back, 2 and 10 km single-mode fiber transmission at 25 Gb/s per each channel, targeting intra-and inter-data-center interconnect applications. Power consumption as low as 19.2 mW for four CMOS driver ICs has been recorded, which yields 0.19 pJ/bit energy efficiency.

Photonic signal processing has been considered a solution to overcome the inherent electronic speed limitations. Over the past few years, an impressive range of photonic integrated signal processors have been proposed, but they usually offer limited reconfigurability, a feature highly needed for the implementation of large-scale general-purpose photonic signal processors. Here, we report and experimentally demonstrate a fully reconfigurable photonic integrated signal processor based on an InP–InGaAsP material system. The proposed photonic signal processor is capable of performing reconfigurable signal processing functions including temporal integration, temporal differentiation and Hilbert transformation. The reconfigurability is achieved by controlling the injection currents to the active components of the signal processor. Our demonstration suggests great potential for chip-scale fully programmable all-optical signal processing.

A wavelength tunable optical buffer with the ability to achieve data recovery based on self-pulsation in an active microring resonator is proposed and experimentally demonstrated. The key component in the optical buffer is the microring resonator which is implemented based on an InP-InGaAsP material system incorporating two semiconductor optical amplifiers and a phase modulator, ensuring an ultrahigh Q-factor and a tunable resonance wavelength for fast self-pulsation operating at gigahertz frequencies. An optical carrier modulated by an arbitrary pulse sequence is used to trigger the self-pulsation in the microring resonator, while its output is coupled to a fiber-optic delay line in an optoelectronic delayed feedback configuration, a recursive system for data storage. Optical buffering and data recovery at 1 Gb/s are experimentally demonstrated, which is the fastest optical buffer ever reported based on self-pulsation in a microring resonator. The proposed optical buffer can be employed to perform critical telecommunication buffer functions including writing, storage, reshaping, healing, and erasing.

A four-channel WDM silicon photonic transmitter with integrated lasers and modulators driven by low-power 32nm CMOS drivers, is demonstrated to operate at a data rate of 4×28Gb/s with BER<10−12 and power consumption of 10.0pJ/bit.

Aurrion heterogeneous platform combines best-in-class active III-V materials for lasers, modulators and photodetectors with advanced passive components on a single chip. By leveraging existing silicon industry infrastructure for manufacturing and packaging, low-cost photonics can be closely integrated with electronics in system-in-package solutions. Such solutions are well suited to meet the demands of next generation optical interconnects.

A ll-optical signal processing attracts much attention because of its potential to overcome the bandwidth and speed bottlenecks of electronic circuits. Many all-optical signal processing techniques already show up in a wide range of applications, like ultrafast telecommunications, optical computing, microwave photonics and biophotonics. These techniques offer processing bandwidths up to several THz—significantly faster than their electronic counterparts. To build an all-optical signal-processing and computing platform, we need to replace electronic circuit components with photonic counterparts, and thereby emulate processes and structures in the electronic domain using photonic technologies. Recently, all-optical temporal differentiators and integrators, and real-time Fourier and Hilbert transformers have been tested in the lab using fiber and integrated optics platforms, with bandwidths two to four orders higher than those of electronic equivalents. We have recently demonstrated two kinds of all-optical temporal integrators. Each design is capable of calculating the time integral of an arbitrary optical temporal waveform and has the potential to reach processing speeds well beyond the capabilities of electronic New photonic temporal integrators could push past some of the processing-speed limitations of electronic approaches. OPTICAL ENGINEERING Ming Li, IS-CAS Photonic integrator based on an active Fabry-Perot cavity.

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

We present a silicon photonics optical link utilizing heterogeneously integrated modulator and photodetector driven by low-power 32nm CMOS driver ICs. We demonstrate error-free operation at 30Gbps and transmission over 10km at 25Gbps without penalty.

Aurrion’s heterogeneous integration process enables high performance active components such as lasers, modulators, and photodetectors to be elegantly integrated on a silicon photonics platform with high performance passive components. This platform also offers the unique capability to combine different types of active devices with separately optimized materials on the same wafer, die, and photonic integrated circuit. Similarly, devices and photonic integrated circuits operating in different wavelength bands can be formed within the same wafer and die. Experimental demonstrations show that these active components can achieve performance on par with commercially available discrete III-V components. In this paper we will discuss the advantages of Aurrion’s heterogeneous integration platform and discuss prototype demonstrations.

A photonic temporal integrator with an ultra-wide integration time window implemented based on a photonic integrated circuit (PIC) in an InP-InGaAsP material system consisting of semiconductor optical amplifiers (SOAs) and current-injection phase modulators (PMs) is proposed and experimentally demonstrated. The proposed photonic integrated integrator employs a ring structure coupled with two bypass waveguides. The tunable coupling between the ring and the waveguides is realized by a multi-mode interference (MMI) Mach-Zehnder interferometer coupler. Within the ring, two SOAs are incorporated to compensate for the insertion loss. In addition, there is a current injection PM in the ring for wavelength tuning. The use of the device provides a photonic temporal integrator with an ultra-wide integration time window and a tunable operation wavelength in a single PIC. The proposed integrator is fabricated and experimentally verified. The integration time window as wide as 6331 ps is achieved, which is an order of magnitude longer than that provided by the previously reported photonic integrators.

A continuously tunable fractional Hilbert transformer based on a photonic integrated chip in an InP-InGaAsP material system consisting of semiconductor optical amplifiers and current injection phase modulators is proposed and experimentally demonstrated.

We present the theory and design of a tunable gain-flattening filter for integrated mode-locked lasers (MLLs). The filter provides the inverse of the semiconductor spectral gain profile and produces a broad flattened net gain. This improves the performance of MLLs by allowing more modes to lase simultaneously. We demonstrate a gain-flattened MLL with a record 10 dB bandwidth of 2.08 THz, the widest frequency comb span for an integrated quantum-well-based laser at 1.55 μm. Gain-flattening theory is used to extend the integrated comb span to 40 nm. We use scattering matrices to investigate feed-forward filters based on asymmetric Mach-Zehnder interferometers (MZIs). We compare MZI filters designed for a fixed coupling value to those that use an active gain arm to adjust the extinction ratio. Tunable zero placement of these filters is achieved using a passive phase tuning arm. The optimized gain-flattening filter has a 5 dB extinction ratio and a 70 nm free-spectral-range. When the filter is incorporated into a ring MLL, simulations predict a 40 nm, i.e., 5 THz, comb span with a power variation <; 3.5 dB.

Among other advantages, radio-frequency (RF) signal processing in the optical domain using photonic integrated circuits (PICs) offers unprecedented bandwidth and tunability. However, modern RF-photonic link applications demand PICs with high spurious-free dynamic range (SFDR). The SFDR of active PICs integrating semiconductor optical amplifiers (SOAs) is limited by amplified spontaneous emission noise and distortion caused by four-wave mixing. Here, we derive an analytical model for the SFDR of SOAs, and extend it to PICs with arbitrary transfer functions integrating many SOAs. The model is general and applicable to any photonic signal-processing circuit operating in the linear amplification regime below saturation. We show analytically the importance of SFDR-driven photonic design over noise-figure-driven design. Using this model, we explore the SFDR of coupled-ring bandpass filters integrated on a high saturation power integration platform and show SFDR as high as 117.0 dB . Hz(2/3) for filters with bandwidths in the 1-2 GHz range. We show how the material parameters and PIC design determine the SFDR. Tradeoffs between SFDR and filter bandwidth, extinction, and stopband roll-off are investigated.

We demonstrate photonic circuits monolithically integrated on an InP-based platform for use in coherent communication links. We describe a technology platform that allows for the integration of numerous circuit elements. We show examples of an integrated transmitter which offers an on-chip wavelength-division-multiplexing source with a flat gain profile across a 2 THz band and a new device design to provide a flatted gain over a 5 THz band. We show coherent receivers incorporating an integrated widely tunable local oscillator as well as an optical PLL. Finally, we demonstrate a tunable optical bandpass filter for use in analog coherent radio frequency links with a measured spurious-free dynamic range of 86.3 dB-Hz2/3 as well as an improved design to exceed 117 dB-Hz2/3.

We present results from novel compact InGaAsP/InP based flattened micro-ring resonators and lasers. Resonators with circumferences 30–300µm by using etched beam-splitters (EBS) are demonstrated. EBS coupler insertion loss is measured as low as 0.6dB.