Plant-mediated ZnO synthesis has been widely reported for powders; however, its translation into substrate-supported oxide coatings remains underdeveloped. Here, Cinnamomum camphora leaf extract was used to synthesize ZnO, which was integrated onto fluorine-doped tin oxide (FTO) as a single layer and ZnO/TiO2 bilayer coatings using two custom ethanol-based binders. The resulting architectures were ZnO/FTO, G-ZnO-450/FTO, TiO2(com)/FTO, and ZnO/TiO2(com)/FTO. X-ray diffraction (XRD) confirmed the hexagonal wurtzite ZnO with characteristic reflections at 2θ ≈ 31.6°, 34.4°, and 36.2°. The Scherrer analysis provided mean crystallite sizes of 19.22 nm for ZnO and 16.93 nm for commercial TiO2. The as-dried ZnO/FTO layer was weakly crystalline, whereas calcination at 450 °C for 2 h sharpened the diffraction features and improved the structural ordering. Fourier-transform infrared (FT-IR) analysis revealed Zn–O lattice vibrations and O–H, C–H, C=O/carboxylate, C–O, and C–N surface-related bands, indicating hydroxylated and residual bio-organic functionality from the plant-mediated route. UV–Vis spectroscopy revealed a near-UV absorption edge, and Tauc analysis revealed a direct optical band gap of 3.162 eV. In sunlight-driven tests using 10 ppm methylene blue, both G-ZnO-450/FTO and TiO2(com)/FTO reduced the visible dye absorbance within 30 min, whereas the ZnO/TiO2(com)/FTO bilayer showed strong decolorization after 24 h in a separate qualitative screening test. Therefore, the bilayer results are cautiously interpreted as endpoint evidence rather than a direct kinetic comparison. These results demonstrate a practical route for translating plant-mediated ZnO into substrate-supported photocatalytically responsive oxide coatings on FTO.

This research examines the effectiveness of nitrogen annealing and Nafion treatment in mitigating Light and Elevated Temperature Induced Degradation (LeTID) in Passivated Emitter and Rear Contact (PERC) solar cells, employing a 30-kW photovoltaic (PV) system for evaluation. As a photosensitive device, solar cells are susceptible to damage from laser irradiation, leading to reduced photoelectric conversion efficiency, structural damage, and functional loss. To minimize this loss, nitrogen annealing and Nafion treatments were applied, followed by the analysis of LeTID effects on untreated, Nafion-treated, and combined nitrogen-annealed and Nafion-treated PERC cells. Untreated cells showed an 8 % fall in open-circuit voltage (Voc) and a 7 % fill factor (FF) loss. The combined treatment (Combination of Nitrogen & Nafion Treatment) improved stability, reducing losses to 6 % in Vocand 5 % in FF. The Nafion treatment yielded the best results, limiting deterioration to 4 % in Vocand 3 % in FF. PVsyst simulations, incorporating real-world data, confirmed enhanced stability and efficiency, aiding in optimizing PV system design and maintenance.

Texturing the surface of crystalline silicon wafers is a very important step in the production of high-efficiency solar cells. Alkaline texturing creates pyramids on the silicon surface, lowering surface reflectivity and improving light trapping in solar cells. This article provides a comparative evaluation of various wet texturing methods using alkaline solutions with or without additives commonly known as surfactants. One method uses sodium hydroxide (NaOH) and isopropyl alcohol (IPA) to create a surface with a height of about 4.5 mu m by texturing for about 30 min, while the other method uses potassium hydroxide (KOH) and other additions known as additives. Texturing was performed using chemicals for only 15 min to create a surface shape with a height of approximately 3.5 mu m. Additionally, the two solutions showed reflectance of 8.01 % or 12.1 % in 400 -1100 nm, respectively. Both processes used alkaline etching at 80 degrees C for saw damage removal (SDR) before texturing. These processes have also been investigated in terms of removing potential organic contaminants from surfaces. Characterization techniques used throughout the investigation included optical microscopy, surface reflectance measurements, scanning electron microscopy (SEM), and electron dispersive spectroscopy (EDS). The purpose of this study is to confirm through experiments which texturing techniques are more suitable for mass production and to develop time- and cost-effective texturing techniques for industrial production of high-throughput, highefficiency solar cells.

The new generation of photovoltaic devices require high quality silicon wafer for solar cell fabrication. Minority carrier lifetime is a basic parameter to be considered for the fabrication of silicon-based energy devices. temporarily passivating the surface of solar-grade silicon wafers using an iodine-ethanol solution after a novel cleaning process involving acetone and ethanol in an ultrasonic bath and saw damage removal (SDR). After cleaning process and the saw damage removal, the 0.2 mol/L Iodine-Ethanol (I-E) solution was used for temporary chemical surface passivation to measure the bulk lifetime of the two types of wafers, which was measured to be 802 μs for phosphorus doped n-type wafer and 226 μs for gallium doped p-type wafer. We explored that with these passivation parameters, a Quokka 3 simulation study validates the use of these wafers in TOPCon solar cells, achieving 22.3

Passivated emitter and rear contact (PERC) cells are financially commanding and rapidly increasing PV system in the energy market. Its efficiency decreases over time because of the Light-Induced degradation (LID) that follows countless hours of exposure to light (above 50oC temperature), and collectively is termed as Light and Elevated Temperature Induced Degradation (LeTID). Every PERC solar cell module experiences the LeTID effect significantly. Excessive hydrogen injection into Si bulk creates the atomic-level defect structure, which is mainly guilty for the LeTID. Therefore, the normal lifetime of PERC modules has become less, and ultimately levelized cost of electricity (LCOE) of installed systems is increasing. All c-Si types of PV devices are degraded by 5

The study explores a novel method to combat the Light and Elevated Temperature‐Induced Degradation (LeTID) in solar cell modules, which significantly reduces their efficiency and lifespan. This method involves applying alternating current (AC) of various waveforms (triangular, sinusoidal, and square) and frequencies (5 and 100 kHz) to boron‐doped p‐type passivated emitter rear contact (p‐PERC) solar cell modules. This approach effectively lowers the series resistance at the critical junction between the silver (Ag) contact and the silicon emitter layer of the PERC solar cell, thereby reducing charge recombination hindered by high resistance, especially at elevated temperatures. As a result, there is an improved flow of electrical charges, leading to decreased energy loss and increased solar cell efficiency. The study's findings indicate that a slow, smooth sinusoidal AC waveform at 100 kHz is particularly effective, restoring about 100% of the original performance of the panel. Moreover, oscillations at 5 kHz also show considerable efficacy, recovering more than 96% of the performance. The sinusoidal waveform is noted to surpass both triangular and square waveforms in recovery efficiency. This research highlights the use of high‐frequency AC electricity as a viable strategy to extend the lifespan and enhance the performance of solar panels.

This study focuses on the enhanced passivation and gettering of boron‐doped p‐type solar grade silicon wafers by incorporating carrier‐selective and passivating tunnel oxide contact (TOPCon). A symmetrical stack of aluminum oxide (Al2O3)/p‐doped n‐type polysilicon (n‐poly‐Si)/ ultrathin silicon oxide (SiOx) in conjunction with long cycles of forming gas annealing is used for enhancing the silicon wafer quality with a novel approach. Multilayer of n‐poly‐Si/SiOx on p‐type crystalline silicon wafer exhibits an implied open‐circuit voltage (iVoc) of 726 mV, effective carrier lifetime (τeff) of 857 μs, and a low recombination current density (Jo) of 1.9 fA cm−2 when subjected to a postdeposition annealing (PDA) of phosphorus‐doped hydrogenated amorphous silicon (n‐a‐Si:H) at 820 °C. To boost passivation and gettering quality, 10 nm‐thick Al2O3 layers on both sides of n‐poly‐Si/SiOx samples are added. This leads to improved τeff (962 μs), reduced Jo (1.1 fA cm−2), and higher iVoc (728 mV). Herein, a thinner 50 nm n‐poly‐Si layer for improved properties is applied. The experiments show improved passivation and gettering. A Quokka‐3 simulation examines the potential of high‐efficiency p‐type TOPCon cells. A novel solar‐grade p‐type wafer quality enhancement approach is introduced, amalgamated with Quokka‐3 results, which could be a milestone in high‐efficiency p‐type TOPCon solar cell production.

In this study, we aimed to develop and characterize Transparent Conductive Adhesive (TCA) materials for mechanically stacked tandem solar cell applications. The research objectives were to enhance the transparency, conductivity, and adhesive strength of TCAs to improve the efficiency and practicality of tandem solar cells. The TCA formulation comprises a combination of polymers and Ag-coated particles, with flexible poly-methyl methacrylate (PMMA) micro-spheres serving as conductive particles and SYLGARD 184 silicon elastomer poly-di-methyl-siloxane (PDMS), mixed in a 10:1 ratio of base to curing agent, serving as the transparent adhesive. We conducted systematic experiments with Ag-particle coverage areas ranging from 0.34% to 21.61% at temperatures of 80°C and 100°C, under 500 mb pressure. The optimal conductivity was achieved at 2 wt% Ag-particle coverage, measuring 5.26×10⁷ S/m, with over 93% transparency. These key results indicate the significant potential of the optimized TCA in enhancing the performance of mechanically stacked tandem solar cells, thus contributing to the advancement of renewable energy technologies.

The primary objectives of solar cell technology are high efficiency, long durability, mass manufacturing, cost effectiveness, and the use of environmentally benign components. Among high-efficiency crystalline silicon (c-Si)-based solar cell types, tunnel oxide passivated contact (TOPCon) solar cells have attracted particular attention because of a multitude of advantages. These include easy processing, high efficiency potential, and availability of raw materials. Due to cheaper wafer pricing, easily compatible with advanced and long-tested PERC solar cell manufacturing process, fabrication of TOPCon solar cells starting with p-type c-Si wafers are significantly more demanding from the standpoint of mass production of solar module. If cutting-edge high-efficiency technologies were used in industrial production, the quality of the p-type wafer may eventually become a bottleneck. Recent production lines elsewhere have developed p-type TOPCon solar cells with 25.19% conversion efficiency using monocrystalline Czochralski (CZ) c-Si wafers. This effectively proves the outstanding viability of p-type TOPCon solar cells for an industrial scale. This review article comprehensively discusses the history of high-efficiency p-type TOPCon solar cells, advancement in various areas to increase effective cell performance, state of commercialization, as well as potential future research opportunities and challenges.

Failures of porcelain insulators due to ice formation, corrosive pollutant deposition, and cracks result in significant power losses in the power transmission system. Using a simple three-step sprayable coating technique, we propose a novel superhydrophobic material for high-voltage insulator surface protection with water absorption resistance, self-cleaning, ice-phobic, and crack healing capabilities. An adhesive polydopamine layer sprayed on an insulator surface to predevelop a macro-nano hierarchical surface based on an oleic acid/nano-SiO2 composite with an oleic acid infusion arrangement is a crucial endurance technique. The technique shows less than 3% water absorbance, more than 150 degrees contact angle, less than 2 degrees contact angle hysteresis, self-cleaning ability, ice-phobic with a minimum ice adhesion strength of 15.5 +/- 9.9 kPa, and crack-healing characteristics after corrosive, thermal, and mechanical aging. Such sustainable, long-lasting, and facile techniques would find widespread applications in the power, civil, marine, and aviation industries.

Polysilicon (poly-Si) passivating contacts overcome the direct metal-semiconductor contact drawback of tradi-tional industrial crystalline silicon (c-Si) solar cells by inserting a layer stack of poly-Si and silicon oxide layers at the rear full-area metal/c-Si interface, which is well-known as a tunnel oxide passivating contact (TOPCon). In conventional industrial TOPCon devices, the direct contact problem affects the emitter, which deteriorates the passivation quality and suppresses the open-circuit voltage (Voc). We herein introduce an innovative bi-poly-Si technique (Bi-TOPCon) featuring rear full-area passivated poly-Si and emitter locally passivated poly-Si to improve the passivation quality of the TOPCon device. The local emitter poly-Si is introduced using metal mask alignment, and its properties are optimised toward high passivation quality and low contact resistance. The Bi-TOPCon device shows a significant improvement in Voc (Voc > 700 mV). Bi-TOPCon is a promising technology for high-efficiency, next-generation industrial TOPCon devices.

This study entails the examination of tunnel oxide passivated contact on p-type silicon wafers (p-TOPCon) passivated with n-polysilicon for a solar cell by using Quokka-3, a numerical simulation program. The effects of the thickness, bulk lifetime, resistivity, and selectivity of charge carriers due to the polysilicon passivated contact are investigated. Through such n-polysilicon passivated contact, the back-emitter solar cells engender higher internal power owing to enhanced surface passivation. This further reduces the shading loss due to front metallization; however, the reduced minority carrier lifetime of the p-type Czochralski (Cz) wafer restricts the possibilities for high efficiency. Subsequently, the minority charge carrier lifetime of the p-type wafer conceivably becomes an obstacle to realizing TOPCon solar cells with a high conversion efficiency. This study demonstrates that a configuration suitable for the industrial manufacturing of high-efficiency solar cells is a crystalline silicon solar cell on a p-type wafer through a rear-emitter n-polysilicon passivated contact. A roadmap toward 24.87% of the p-TOPCon solar cells through the n-type polysilicon passivated contact is also devised.

Silicon-based tandem solar cells with efficient use of the solar spectrum are desirable for a next generation-commercial photovoltaic system. It has been widely investigated elsewhere using perovskites or III-V cells as top cell materials for high efficiency and stability. However, perovskite and III-V top cells are still unsuitable for mass production as well as expansion and integration with silicon solar cell production processes so far. Two-terminal bifacial Si/Si tandem cell by bonding with transparent conductive adhesive (TCA) is reported here. The current matching can maximize the efficiency by controlling the opening area of the top cell, which makes the bottom cell also able to absorb sunlight in the short wavelength region that is absorbed by the top cell as well, without being limited to the thickness or bandgap of the top cell. The Si/Si tandem solar cell achieved short circuit current density of 25.195 mA/cm2 after current matching by 36% opening ratio of top cell.

Stress corrosion accounts for 52% of the recorded breakdown of insulators utilized in transmission lines which may interfere with the reliability of power utilities. The suggested etching-free treatment is a workable environmentally benign method to prevent stress corrosion, even in old insulators with more excellent surface imperfections or cracks. The resilient slippery coating is developed on an insulator surface to address the challenges by infusing perfluoropolyether, lubricating oil into a porous nano-silica surface. The proposed coating layer, thickness 35.4 mu m, exhibits superhydrophobicity with contact angle -160 degrees, contact angle hysteresis -4 degrees, self-healing, corrosion resistance with a corrosion rate of 2 x 10-3 mm/Y, Icorr 2.01 x 10-7 A/cm2, and 98% anti-bacterial adhesion performance against sulfate reducing bacterial stains. The outcome of this research is expected to pave the way for an approach to the future creation of incredibly robust etching-free coatings for insulators.

High mobility and stability are critical factors for thin film transistor (TFT) device quality. These parameters are directly dependent on the crystalline structure of the active layer materials. In this paper, the early nucleation approach was performed for increasing the crystalline grain size of microcrystalline silicon ( μ c-Si:H) active layer for TFT device quality. The crystalline nucleation is delicately regulated in an intense hydrogen plasma environment using the plasma enhanced chemical vapor deposition (PECVD). When compared to μ c-Si:H deposition without the nucleation approach, the crystalline volume factor of μ c-Si:H increased from 60% to over 80% by using the nucleation technique. The nucleation increases the crystalline grain size by five orders of magnitude. Furthermore, the surface roughness of μ c-Si:H is decreased from 13.7 nm to 7.1 nm. A forming-gas post-annealing treatment (≤400 °C) is used to minimize defect density. With a low microstructural factor, thermal-treated film quality improves dramatically. Nucleation approach is to be a simple and efficient for producing high-quality TFT devices.

Passivated contacts based on ultrathin silicon oxide (SiOx) layers and phosphorus-doped nanocrystalline silicon oxide (nc-SiOx(n)) layers have been examined for their application in tunnel oxide-passivated contact (TOPCon) solar cells. Passivated contact nc-SiOx(n)/SiOx, is accomplished by implementing a thermally grown SiOx tunnel layer and a plasma-enhanced chemical vapor deposited (PECVD)-grown nc-SiOx(n) layer, which are subsequently transformed into a more crystalline phase by annealing at a higher temperature. In this research, a 3.2 x 3.2 cm solar cell was fabricated, where the base material was n-type crystalline silicon (c-Si(n)), and an aluminum oxide (Al2O3) acts as a passivation layer which helps to enhanced the passivation properties and indium tin oxide (ITO) layer was used on the front side, which could serve as an anti-reflection coating (ARC), respectively. The in-fluence of the temperature, doping level, and thickness of nc-SiOx(n) on the surface passivation of the contacts was investigated. Superior recombination current density (Jo) values of up to 2.9 fA/cm2 were assessed for the nc-SiOx(n)/SiOx contacts. TOPCon solar cells with top boron-doped emitter, Al2O3, and ITO/rear stack of nc-SiOx(n)/SiOx passivation contacts were formed and resulted in Voc = 650 mV and FF = 78%. Furthermore, we focused on ameliorating the achievements of solar cells using a transparent passivating contact-based nc-SiOx(n), as well as the passivation process and operating principle.

The production and optimization of HfAlO-based charge trapping memory devices is central to our research. Current optimization methods, based largely on experimental experience, are tedious and time-consuming. We examine various fabrication parameters and use the resulting memory window data to train machine learning algorithms. An optimized Support Vector Regression model, processed using the Swarm algorithm, is applied for data prediction and process optimization. Our model achieves a MSE of 0.47, an R-2 of 0.98856, and a recognition accuracy of 90.3% under cross-validation. The findings underscore the effectiveness of machine learning algorithms in non-volatile memory fabrication process optimization, enabling efficient parameter selection or outcome prediction.

Corrosion accounts for 52% of the recorded breakdown of insulators utilized in transmission lines, which may interfere with the reliability of power utilities. The CeO2 conversion coating, CeO2-ethylene propylene diene monomer, EPDM composite coating, and Perfluoropolyether PFPE lubricating oil-infused hydrophobized CeO2 composite surfaces were developed on the insulator surface to address these challenges. The properties of these three kinds of structures are compared based on the persistence of coating over insulators installed in a highly contaminated environment. PFPE lubricating oil-infused hydrophobized CeO2 composite surfaces show excellent performance over other approaches. A lubricating oil-infused hydrophobized CeO2 composite of thickness 35.4 µm exhibits contact angles 60°, 85°, and 160°, and contact angle hysteresis of 12°, 10°, and 4°, respectively, after accelerated thermal aging. The proposed approach presents self-healing and corrosion resistance (corrosion rate 0.3 × 10−3 mm/Y, Icorr 1.2 × 10−7), post-accelerated thermal aging. The research outcome is expected to pave the way for incredibly robust insulator coatings.

We propose an in-situ stoichiometric SiO2 layer deposition using plasma-enhanced chemical vapor deposition (PECVD) to replace typical outside SiO2 deposition for semiconductor devices, such as thermal oxidation and/or wet chemical oxidation. The SiO2 films deposited in a silane (SiH4), argon (Ar), and carbon dioxide (CO2) precursor gas mixture are compared to those deposited in a standard SiH4+CO2 plasma environment. Ar gases are introduced into the plasma environment of silane (SiH4) and carbon dioxide (CO2) to improve the opto-electronic properties and stoichiometry of SiO2. The addition of the Ar gases promotes the dissociation of SiH4 and CO2, resulting in an increase in the deposition rate and a decrease in the SiO2 refractive index. The addition reduces the dielectric constant of SiO2 by analyzing the metal-oxide-semiconductor structure. The resultant SiO2 shows excellent surface passivation of crystalline silicon wafers. The mechanism of SiO2 formation in PECVD with mixture gases is thoroughly addressed. The in-situ PECVD-based stoichiometric SiO2 layer is expected to reduce the complexity of the semiconductor device procedure.