(PbLa)(Zr,Ti)O-3 (PLZT) thin films were fabricated by RF magnetron sputtering. Aiming at process development for FRAM(R) production, PLZT films were deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rate was realized at relatively low sputtering power by utilizing a high-density PLZT target Precise compositional control was achieved by controlling sputtering condition. A non-stop 1000-wafer deposition was performed showing high process stability in terms of both deposition rate and ferroelectric properties.

SrBi2Ta2O9 (SBT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a 12-inch ceramic SET single target. It is found that several sputtering parameters such as argon (Ar) pressure and rf power were very effective to control the Bi content of SET thin films which is essential for obtaining good ferroelectric properties.

Pb(Zr,Ti)O3 (PZT) thin films have been fabricated by RF magnetron sputtering. Aiming at productional process development for ferroelectric RAM application, PZT films have been deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rates up to 100 nm/min have been realized by utilizing a high-density PZT target. Flexible compositional control has been achieved by controlling sputtering conditions. A newly introduced electro-static chuck (ESC) type substrate cooling system has been found effective to improve stability of film composition of PZT sputtering

The process stability of Pb(Zr, Ti)O-3 (PZT) sputtering was studied by observing film composition change as a function of the process duration (e.g. integrating sputtering time). A useful method of controlling compositional stability was developed. It was found that the existence of a potentially grounded anode was effective to prevent the large Variation of Pb contents in PZT thin films and improve the process stability of PZT sputtering.

PLZT thin films were deposited on 6-inch Pt/ri/SiO2/Si substrates by radio frequency (RF) magnetron sputtering using a multichamber type production system The lead (Pb) content in low temperature deposited PLZT films was measured by ICP spectroscopy and structural properties of rapid thermally annealed PLZT films were characterized by X-ray diffraction and scanning electron microscopy. It is found that several sputtering parameters such as RF power, argon (Ar) gas flow and magnetic field were very effective to control the Pb content which is essential for obtaining good ferroelectric properties.

A new CoNiCr/Cr film for the thin film hard disk has been developed. By adding Ni and Cr to a Co thin film, a high coercive force more than that of Co/Cr film was obtained and the high resistance against humidity test could be obtained.The CoNiCr/Cr hard disk prepared by in-line sputtering system provided recording and reproducing properties equivalent to those of the CoNiP plated disk.

Surface protective films for hard disk media were studied. Whereas sputtered carbon films are not sufficiently wear-resistant for use with CaTiO3 and Al2O3. TiC head sliders, tests using plasma-CVD films prepared in acetylene gas under RF or dc discharge have lubricating properties and sufficient wear resistance, but are so soft that disk surfaces are easily damaged. By combining the two in a doub...

The origin of the high coercive force of sputtered CoNiCr/Cr film was studied and it has been shown that the CoNiCr/Cr film has a fine grain structure with magneto-crystalline anisotropy oriented in the plane, which results in a high coercive force in the film plane. The addition of Ni to Co magnetic layer increases both the magneto-crystalline anisotropy and the coercive force. From the temperatu...

The surface protective layer for wear resistance of CoNiCr/Cr sputtered hard disk has been studied. The carbon film continuously sputtered on CoNiCr/Cr disk has a good wear resistance against a Mn-Zn ferrite head slider but not against CaTiO3and Al2O3-TiC head sliders. The P-CVD carbon film prepared by the RF or DC discharge of C2H2gas on a CoNiCr/Cr disk is also not good. The P-CVD carbon film deposited at low C2H2gas pressure is sufficiently hard but the friction coefficient is too large, while the film deposited at high pressure has contrarily small friction coefficient and the small hardness. The double layer film of the P-CVD carbon layer deposited at higher pressure on the sputtered carbon layer or P-CVD carbon layer deposited at lower acetylene gas pressure has both of the good wear resistance and the small friction coefficient even against to CaTiO3and Al2O3-TiC head sliders. We call this double layer film newly designed as the "DUAL CARBON".

The relationship between the deposition conditions and the magnetic properties of a newly developed Co-O perpendicular magnetic film was investigated. The higher the deposition rate, the more easily the perpendicular magnetic film can be obtained and excellent magnetic properties were obtained even at the deposition rate higher than 900 Å/sec. It was found that the superior perpendicular magnetic ...