We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with strong spin-orbit interaction. As a result of both the spin-orbit interaction and induced superconductivity, the local charge and spin of these states varies as a function of externally controllable parameters: the phase difference between the superconducting leads, an applied magnetic field, and filling of the underlying semiconductor. Concomitantly, coupling to fluctuations of the electric or magnetic environment will vary, which informs the rate of dephasing. We qualitatively predict the dependence of dephasing on the nature of the environment, magnetic field, phase difference between the junction, and filling of the semiconductor. Comparing the simulated electric- and magnetic-noise-induced dephasing rate to experiment suggests that the dominant source of noise is magnetic. Moreover, by appropriately tuning these external parameters, we find sweet-spots at which we predict an enhancement in ASQ coherence times.

This paper describes a novel multi-metal layered interconnect-based heterogeneous integration approach for developing a reworkable superconducting qubit package. Various microbump options, including gold, tin, indium, and tin indium, were used to achieve the desired flip-chip configurations. As a case study, we demonstrate a reworkable cryogenic superconducting qubit package capable of interconnecting up to 32 microwave lines. The flip-chip package configurations show low (below 30 dB @ RT) nearest-neighbor crosstalk up to 10 GHz. Initial qubit measurements at low temperatures (~10 mK) show qubit lifetime T 1 > 100 μs (Q > 2M), which is comparable to the planar versions measured in our standard Al wirebonded package. Keywords—qubit, heterogeneous integration, interconnect, flip-chip, crosstalk.

Qubit decoherence unavoidably degrades the fidelity of quantum logic gates. Accordingly, realizing gates that are as fast as possible is a guiding principle for qubit control, necessitating protocols for mitigating error channels that become significant as gate time is decreased. One such error channel arises from the counter-rotating component of strong, linearly polarized drives. This error channel is particularly important when gate times approach the qubit Larmor period and represents the dominant source of infidelity for sufficiently fast single-qubit gates with low-frequency qubits such as fluxonium. In this work, we develop and demonstrate two complementary protocols for mitigating this error channel. The first protocol realizes circularly polarized driving in circuit QED through simultaneous charge and flux control. The second protocol-commensurate pulses-leverages the coherent and periodic nature of counter-rotating fields to regularize their contributions to gates, enabling single-qubit gate fidelities reliably exceeding 99.997%. This protocol is platform independent and requires no additional calibration overhead. This work establishes straightforward strategies for mitigating counter-rotating effects from strong drives in circuit QED and other platforms, which we expect to be helpful in the effort to realize high-fidelity control for fault-tolerant quantum computing.

Phase slips occur across all Josephson junctions (JJs) at a rate that increases with the impedance of the junction. In superconducting qubits composed of JJ-array superinductors-such as fluxonium-phase slips in the array can lead to decoherence. In particular, phase-slip processes at the individual array junctions can coherently interfere, each with an Aharonov-Casher phase that depends on the offset charges of the array islands. These coherent quantum phase slips (CQPS) perturbatively modify the qubit frequency, and therefore charge noise on the array islands will lead to dephasing. By varying the impedance of the array junctions, we design a set of fluxonium qubits in which the expected phase-slip rate within the JJ array changes by several orders of magnitude. We characterize the coherence times of these qubits and demonstrate that the scaling of CQPS-induced dephasing rates agrees with our theoretical model. Furthermore, we perform noise spectroscopy of two qubits in regimes dominated by either CQPS or flux noise. We find that the noise power spectrum associated with CQPS dephasing appears to be featureless at low frequencies and not 1/f. Numerical simulations indicate that this behavior is consistent with charge noise generated by charge-parity fluctuations within the array. Our findings broadly inform JJ-array-design trade-offs, relevant for the numerous superconducting-qubit designs employing JJ-array superinductors.

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

We propose superconducting-semiconducting (super-semi) qubit and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer"probe"wafer containing TSVs is used to contact a sample wafer with, for example, a superconductor-proximitized, epitaxially-grown, germanium quantum well. By utilizing the capacitance of the probe wafer TSVs, the majority of the electric field in the qubits is pulled away from lossy regions in the semiconducting wafer. Through simulations, we find that the probe wafer can reduce the qubit's electric field participation in the sample wafer by an order of magnitude for thin substrates and remains small even when the epitaxial layer thickness approaches 100 $\mu$m. We also show how this scheme is extensible to multi-qubit systems which have tunable qubit-qubit couplings without magnetic fields. This approach shrinks the on-chip footprint of voltage-tunable superconducting qubits and promises to accelerate the understanding of super-semi heterostructures in a variety of systems.

We propose and demonstrate an architecture for fluxonium-fluxonium two-qubit gates mediated by transmon couplers (FTF, for fluxonium-transmon-fluxonium). Relative to architectures that exclusively rely on a direct coupling between fluxonium qubits, FTF enables stronger couplings for gates using non-computational states while simultaneously suppressing the static controlled-phase entangling rate ($ZZ$) down to kHz levels, all without requiring strict parameter matching. Here we implement FTF with a flux-tunable transmon coupler and demonstrate a microwave-activated controlled-Z (CZ) gate whose operation frequency can be tuned over a 2 GHz range, adding frequency allocation freedom for FTF's in larger systems. Across this range, state-of-the-art CZ gate fidelities were observed over many bias points and reproduced across the two devices characterized in this work. After optimizing both the operation frequency and the gate duration, we achieved peak CZ fidelities in the 99.85-99.9\% range. Finally, we implemented model-free reinforcement learning of the pulse parameters to boost the mean gate fidelity up to $99.922\pm0.009\%$, averaged over roughly an hour between scheduled training runs. Beyond the microwave-activated CZ gate we present here, FTF can be applied to a variety of other fluxonium gate schemes to improve gate fidelities and passively reduce unwanted $ZZ$ interactions.

We introduce a circuit-QED architecture combining fixed-frequency qubits and microwave-driven couplers. In the appropriate frame, the drive parameters appear as tunable knobs enabling selective two-qubit coupling and coherent-error suppression. We moreover introduce a set of controlled-phase gates based on drive-amplitude and drive-frequency modulation. We develop a theoretical framework based on Floquet theory to model microwave-activated interactions with time-dependent drive parameters, which we also use for pulse shaping. We perform numerical simulations of the gate fidelity for realistic circuit parameters, and discuss the impact of drive-induced decoherence. We estimate average gate fidelities beyond 99.9% for all-microwave controlled-phase operations with gate times in the range 50 − 120 ns. These two-qubit gates can operate over a large drive-frequency bandwidth and in a broad range of circuit parameters, thereby improving extensibility. We address the frequency allocation problem for this architecture using perturbation theory, demonstrating that qubit, coupler and drive frequencies can be chosen such that undesired static and driven interactions remain bounded in a multi-qubit device. Our numerical methods are useful for describing the time-evolution of driven systems in the adiabatic limit, and are applicable to a wide variety of circuit-QED setups.

Encoding a qubit in logical quantum states with wave functions characterized by disjoint support and robust energies can offer simultaneous protection against relaxation and pure dephasing. One of the most promising candidates for such a fully protected superconducting qubit is the 0-pi circuit [Brooks et al., Phys. Rev. A 87, 052306 (2013)]. Here we realize the proposed circuit topology in an experimentally obtainable parameter regime, where the ground-state degeneracy is lifted but the qubit is still largely noise protected. More precisely, the logical states of this qubit feature disjoint support and are exponentially protected against relaxation and exponentially (first order) protected against dephasing due to charge (flux) noise. We name the resultant device the "soft 0-pi qubit." Multitone spectroscopy measurements reveal the energy-level structure of the system, which can be precisely described by a simple two-mode Hamiltonian. Using a Raman-type protocol, we exploit a higher-lying charge-insensitive energy level of the device to realize coherent population transfer and logical operations. The measured relaxation (T-1 = 1.6 ms) and dephasing (T-R = 9 mu s, T-2E = 25 mu s) times demonstrate that the soft 0-pi circuit not only broadens the family of superconducting qubits but also constitutes an important step toward quantum computing with intrinsically protected superconducting qubits.

One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of ≈8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/f noise spectrum of 3.4 μeV/Hz1∕2 at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110 ± 26 μeV. This work demonstrates that reproducible MOS spin qubits are feasible and represent a platform for scaling to larger qubit systems in MOS.

We characterize a fluxonium qubit consisting of a Josephson junction inductively shunted with a NbTiN nanowire superinductance. We explain the measured energy spectrum by means of a multimode theory accounting for the distributed nature of the superinductance and the effect of the circuit nonlinearity to all orders in the Josephson potential. Using multiphoton Raman spectroscopy, we address multiple fluxonium transitions, observe multilevel Autler-Townes splitting and measure an excited state lifetime of T_{1}=20  μs. By measuring T_{1} at different magnetic flux values, we find a crossover in the lifetime limiting mechanism from capacitive to inductive losses.

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of nine series-coupled silicon quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By constructing more complex pulse sequences we perform parallel shuttling of two and three electrons at a time through the array. These experiments demonstrate a scalable approach to physically transporting single electrons across large silicon quantum dot arrays.