We have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results.

Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO 2 -Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.

We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.

The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.

The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose numerically. The possibility of application of the conversion model for the numerical estimation of radiation-induced increase of LM111 input current under low dose rate radiation impact was demonstrated experimentally. A test method using four-stage elevated single temperature irradiation was proposed. The ability of temperature-switching approach for simulation of enhanced low-dose-rate sensitivity was estimated and discussed.

It was designed dual mode ion mobility spectrometer high voltage formation circuit. The circuit design includes simulation of the dynamic formation of a sinusoidal signal. The simulation of the dynamic formation of a sinusoidal signal is investigated. It is characterized by a high voltage multiplier and several variants of a voltage smoothing filter.

It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.

Penetration of alien atoms (Be, Al, Ni, Mo) into Si, diamond monocrystals substrates was investigated under Ar+ ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar+ ions with mean energy 9.4 keV to dose D=1x10(16)-10(19) ion/cm(2). Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H+ and He+ ions with start energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3-20 times deeper than the projected range of bombarding ions and recoil atoms. This is a "ion mixing" process. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r(i)/r(m) (r(i) - radius of dopant atom, r(m) - radius of substrate atom) can play a principal determining role. Show that maximum penetration depth of the film atoms in the substrates may be determine by "isotropic model" under ion beam (with wide energy spectrum - polyenergy) irradiation of the "film-substrate" systems too.

The ion mobility spectrometer with a fast switching of the polarity of the drift field is designed for alternate, incessant detection of positive and negative ions from nonradioactive active ionization source. It were also solved the problems of dielectric absorption on the collector and voltage stabilization on the protective ion grid.

Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.

Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.

Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.

The impact of radiation degradation on the temperature dependence of electrical parameters of bipolar operational amplifiers is presented. Results of the researches can improve our understanding of physical and circuit radiation effects in bipolar operational amplifiers.

TID effects in 4 Mbit AT27 EPROM at different dose rates were investigated. The electrical characterization was performed at different power supply voltages to determine the correlation between a functional failure and corresponding parametric degradation.

The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current ID and the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VG is the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2–Si interface Qs. The model’s parameters ΔVt(D,T) and ΔVs(D,T) were calculated using the experimental ID–VG characteristics. These models can be used to predict performances of MISFET-based devices.

The electryical characteristics of widely used bipolar transistors on temperature before and after ionizing radiation impact were investigated. The operation at low temperatures can be considered as the worst case for bipolar devices.

Total ionizing dose response of AD590 temperature sensor was investigated in wide operation temperature range. Obtained results can be useful for designers of electronic devices for nuclear and space applications.

The joint model of dose radiation effects was proposed. It enables to avoid underestimation of the radiation hardness of ELDRS-free devices by standard test methods for space applications.

Radiation induced degradation of widely used bipolar voltage comparators was investigated in wide temperature range from high to liquid nitrogen temperatures. It was obtained, that the parametric degradation is significantly greater at low temperature measurements.

The physical model of the saturation of radiation-induced degradation in bipolar devices was proposed. The model can be used for hardness assurance applications for high total dose levels at different irradiation temperatures.