A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.

В работе представлен обзор типовых и предельных уровней радиационной стойкости полупроводниковых лазерных излучателей, приемопередающих оптических модулей, оптических волокон, одиночных и матричных фотоприемных устройств, пассивных компонентов ВОЛС.

Рассмотрены тенденции развития ЭКБ твердотельной СВЧ-электроники (ТСВЧЭ) класса «система на кристалле» и «система в корпусе» РЭА связи и передачи данных, радиолокации, навигации. Проведен анализ номенклатуры изделий отечественной ЭКБ ТСВЧЭ, рассмотрены проблемные вопросы проектирования и производства.

Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS conversion model describes the low dose rate effect as “true” dose rate effect.

Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The technique and results of performed numerical analyses are presented and discussed.

Представлен рациональный порядок записи в ТУ на ЭКБ информации о радиационной стойкости (РС), полученной в ходе испытаний и расчетно-экспериментальных оценок.

Проведен анализ основных тенденций и особенностей проявления доминирующих радиационных эффектов в ЭКБ на основе КМОП-технологий при переходе к проектным нормам 28 нм и менее. Рассматривается роль новых материалов и геометрии транзистора при переходе к технологиям FDSOI и FinFET.

На основе учета зарядового состояния радиационно-индуцированных поверхностных ловушек, положения эффективного уровня Ферми, определяющего сечение захвата ловушек, и данных о накоплении объемного заряда и поверхностных состояний проведен расчет тока поверхностной рекомбинации в биполярных транзисторах при накоплении полной дозы ионизирующего излучения. The calculation of the surface recombination current in bipolar transistors during the accumulation of the total dose of ionizing radiation is carried out based on consideration of the charge state of radiation-induced interface traps, the position of the effective Fermi level determining the trap capture cross-section, and data of the accumulation of the volume charge and interface states

завиСимоСтЬ радиаЦионной СтойкоСти изделий твердотелЬной СвЧ Электроники от набора параметров-критериев годноСти г. в.Чуков 2 , в

дока-зывают «теорему существования» разработанного изделия и технический уровень результата разработки для всех категорий потребителей. Ключевые слова: электронная компонентная база; радиационная стойкость; радиационные испытания; радиационное воздей-ствие; технические требования. The paper deals with electronic parts ranking based on their radiation hardness category and highlights technical and economical reasons of radiation hardness requirements for all kinds of device types. It has been stated that radiation response characterizes the individual sensitivity of the device functional and parasitic structures set that can be used for device identifi cation. At the same time radiation test data prove the

A methodical approach for the identification of a plant and characterization of integrated circuit technology based on an analysis of the features of a radiation response is proposed.

Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects contribution to enhanced low dose rate sensitivity effect is related with processes during post-irradiation annealing. The conversion model of low dose rate effect was used for numerical description of the radiation responses of input bias currents of bipolar operational amplifiers in wide range of dose rates.

The joint model of dose radiation effects was proposed. It enables to avoid underestimation of the radiation hardness of ELDRS-free devices by standard test methods for space applications.

ОбзорСхемотехническое моделирование одиночных эффектов при воздействии тяжелых заряженных частиц в КМОП СБИС с суб-100-нм проектными нормами А.А.Смолин 1

Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.

In the article we introduce histogram method for digital to analog converters’ space radiation testing including both total dose and single event effects. We present new total dose and single event (SEL, SEU and SET) data of three DAC chips, as well as test setup and measurement system structure.

Electronic components intellectual capabilities growth is based on the usage of microelectronic's technology: processes, CAD-approaches, structures and devices. Microelectronics implementation into all functional groups of electronic parts is declared to become the basic trend in their product range development. These phenomena essentially reduce the radiation hardness values of the devices that previously had been considered to be extremely radhard.

The ELDRS enhancement factor versus total absorbed dose and dose rate is considered in a wide range of doses.