Ultrathin SiOx layers and c-Si/SiOx interfaces find application in tunnel-oxide passivated contacts (TOPcon) for high-efficiency silicon solar cells. Here, we investigate their detailed microscopic properties, with specific attention for the case of c-Si(100) substrates, capped either by p-type or n-type poly-silicon layers [c-Si/SiOx/poly-Si (p+) or c-Si/SiOx/poly-Si (n+)]. Our focus is on the effects of the substrate preparation conditions (either by a dry-plasma or wet SiOx process) and the high-temperature annealing step (as required for the poly-Si crystallization) on the SiOx stoichiometry and its microscopic structure. Through advanced photoemission techniques, we find a clearly decreased valence band offset between the c-Si and SiOx (from 4.5 eV to 4.15 eV) when comparing the dry SiOx with the wet SiOx process, independent of the SiOx film thickness, but correlating with the relative fraction of sub-stochiometric Si states. We lastly examine the magnitude of band-bending of the contact structure through controlled in-situ exposure to light of the surfaces and subsequent tracking of core and valence band levels via a surface photovoltage and a junction photo-voltage (JPV) effect. By analyzing this JPV effect qualitatively, we find it to be proportional to the expected quasi fermi level splitting within the c-Si wafer.

Monolithic perovskite/silicon tandem solar cells have the potential to reach very high power conversion efficiencies (PCEs) in a cost-effective manner. In the last decade, significant technological advancements have been made for lab-scale devices (similar to 1 cm(2)), with PCEs now higher than the theoretical PCE limit of single-junction silicon solar cells. For market entry of such tandems, the involved processing steps need to be scaled to industrial wafer dimensions, typically >244 cm(2), which also mandates the development of adequate electrode-metallization strategies. Here we discuss challenges and opportunities related to this, including the required properties of the front metal grid for perovskite/silicon tandems, as well as key motivations and challenges in adopting screen-printed metallization, which is the current standard for mainstream silicon solar cells. We give a cost estimation for the front metal grid by considering the cost of low-temperature metal pastes that are compatible with the thermal budget limitations imposed by the perovskite top cell. We also consider opportunities to employ alternative metallization schemes that arise from the reduction in current density in tandem solar cells compared to single-junction devices. Lastly, we discuss possible routes to replace or minimize the silver content in costly silver-based metallization for industrial applications.

Textured silicon wafers used in silicon solar cell manufacturing offer superior light trapping, which is a critical enabler for high-performance photovoltaics. A similar optical benefit can be obtained in monolithic perovskite/silicon tandem solar cells, enhancing the current output of the silicon bottom cell. Yet, such complex silicon surfaces may affect the structural and optoelectronic properties of the overlying perovskite films. Here, through extensive characterization based on optical and microstructural spectroscopy, it is found that the main effect of such substrate morphology lies in an altering of the photoluminescence response of the perovskite, which is associated with thickness variations of the perovskite, rather than lattice strain or compositional changes. With this understanding, the design of high-performance perovskite/silicon tandems is rationalized, yielding certified power conversion efficiencies of >28%.

Two-dimensional transition metal carbides (MXenes) are of great interest as electrode materials for a variety of applications, including solar cells, due to their tunable optoelectronic properties, high metallic conductivity, and attractive solution processability. However, thus far, MXene electrodes have only been exploited for lab-scale device applications. Here, to demonstrate the potential of MXene electrodes at an industry-relevant level, we implemented a scalable spray coating technique to deposit highly conductive (ca. 8000 S/cm, at a ca. 55 nm thickness) Ti3C2Tx films (Tx: surface functional groups, i.e., -OH, -O, -F) via an automated spray system. We employed these Ti3C2Tx films as rear electrodes for silicon heterojunction solar cells as a proof of concept. The spray-deposited MXene flakes have formed a conformal coating on top of the indium tin oxide (ITO)-coated random pyramidal textured silicon wafers, leading to >20% power conversion efficiency (PCE) over both medium-sized (4.2 cm2) and large (243 cm2, i.e., industry-sized 6 in. pseudosquare wafers) cell areas. Notably, the Ti3C2Tx-rear-contacted devices have retained around 99% of their initial PCE for more than 600 days of ambient air storage. Their performance is comparable with state-of-the-art solar cells contacted with sputtered silver electrodes. Our findings demonstrate the high-throughput potential of spray-coated MXene-based electrodes for solar cells in addition to a wider variety of electronic device applications.

Stable and efficient perovskite/silicon tandem solar cells require defect passivation and suppression of light-induced phase segregation of the wide-band-gap perovskite. Here, we report how molecules containing both electron-rich and electron-poor moieties, such as phenformin hydrochloride (PhenHCl), can satisfy both requirements, independent of the perovskite's surface chemical composition and its grain boundaries and interfaces. PhenHCl-passivated wide-band-gap (similar to 1.68 eV) perovskite p-i-n single-junction solar cells deliver an open-circuit voltage (V-OC) similar to 100 mV higher than control devices, resulting in power conversion efficiencies (PCEs) up to 20.5%. These devices do not show any V-OC losses after more than 3,000 h of thermal stress at 85 degrees C in a nitrogen ambient Moreover, PhenHCl passivation improves the PCE of textured perovskite/silicon tandem solar cells from 25.4% to 27.4%. Our findings provide critical insights for improved passivation of metal halide perovskite surfaces and the fabrication of highly efficient and stable perovskite-based single-junction and tandem solar cells.

Perovskite/silicon tandem solar cells promise power conversion efficiencies (PCE) beyond the thermodynamic limit of single-junction devices. This potential has been unveiled via several champion devices, however, their actual outdoor performance is yet to be investigated. Here, we fabricate 25 %-efficient two-terminal (2T) monolithic perovskite/silicon tandem solar cells and test them outdoors to reveal the characteristics of these devices specifically in hot and sunny climates, which are the ideal locations to operate such efficient photovoltaic devices. In this article, we summarize our observation on the perovskite/silicon tandem solar cells under actual operational conditions and discuss the lessons we take from our interpretations.

27%-efficient perovskite/silicon tandem solar cells are achieved in n–i–p configuration by developing novel electron and hole selective contacts, which combine high broadband transparency with efficient charge extraction.

Bifacial monolithic perovskite/silicon tandem solar cells exploit albedo—the diffuse reflected light from the environment—to increase their performance above that of monofacial perovskite/silicon tandems. Here we report bifacial tandems with certified power conversion efficiencies >25% under monofacial AM1.5G 1 sun illumination that reach power-generation densities as high as ~26 mW cm–2 under outdoor testing. We investigated the perovskite bandgap required to attain optimized current matching under a variety of realistic illumination and albedo conditions. We then compared the properties of these bifacial tandems exposed to different albedos and provide energy yield calculations for two locations with different environmental conditions. Finally, we present a comparison of outdoor test fields of monofacial and bifacial perovskite/silicon tandems to demonstrate the added value of tandem bifaciality for locations with albedos of practical relevance. Bifacial solar cells can outperform monofacial cells by exploiting sunlight reflected off the ground surface. De Bastiani et al. show that bifacial perovskite/silicon tandem with an optimized bandgap can deliver a power density of 26 mW cm–2 and compare its performance to monofacial cells under outdoor conditions.

Perovskite/silicon tandem solar cells are emerging as a high-efficiency and prospectively cost-effective solar technology with great promise for deployment at the utility scale. However, despite the remarkable performance progress reported lately, assuring sufficient device stability-particularly of the perovskite top cell-remains a challenge on the path to practical impact. In this work, we analyze the outdoor performance of encapsulated bifacial perovskite/silicon tandems, by carrying out field-testing in Saudi Arabia. Over a six month experiment, we find that the open circuit voltage retains its initial value, whereas the fill factor degrades, which is found to have two causes. A first degradation mechanism is linked with ion migration in the perovskite and is largely reversible overnight, though it does induce hysteretic behavior over time. A second, irreversible, mechanism is caused by corrosion of the silver metal top contact with the formation of silver iodide. These findings provide directions for the design of new and more stable perovskite/silicon tandems

Perovskite/silicon tandem solar cells promise power conversion efficiencies beyond the Shockley–Queisser limit of single-junction devices; however, their actual outdoor performance is yet to be investigated. Here we fabricate 25% efficient two-terminal monolithic perovskite/silicon tandem solar cells and test them outdoors in a hot and sunny climate. We find that the temperature dependence of both the silicon and perovskite bandgaps—which follow opposing trends—shifts the devices away from current matching for two-terminal tandems that are optimized at standard test conditions. Consequently, we argue that the optimal perovskite bandgap energy at standard test conditions is <1.68 eV for field performance at operational temperatures greater than 55 °C, which is lower compared with earlier findings. This implies that bromide-lean perovskites with narrower bandgaps at standard test conditions—and therefore better phase stability—hold great promise for the commercialization of perovskite/silicon tandem solar cells. Outdoor field testing is crucial to understand how solar cells behave under operational conditions. Here, Aydin et al. show that a lower perovskite bandgap than that calculated at laboratory standard test conditions enhances the performance of perovskite/silicon tandem cells in the field.

In article 2000589, Stefaan De Wolf and co-workers introduce a simple and scalable method to grow very thin SiOx layers on silicon wafers by their exposure to a CO2 plasma. Subsequently, boron-doped amorphous silicon layers are deposited in the same conventional plasma-enhanced chemical vapor deposition chamber. Upon annealing, such stacks crystallize into highly efficient passivation contacts for silicon solar cells.

Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiO x films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here, plasma‐dissociated CO 2 is investigated to grow in situ thin (<2 nm) SiO x films on c‐Si wafers as tunnel‐oxides for plasma‐deposited, hole‐collecting (i.e., p‐type) polysilicon contacts. It is found that such plasma processing offers excellent thickness control and superior structural integrity upon thermal annealing at 1000 °C, compared to state‐of‐the‐art wet‐chemical oxides. As a result, p‐type polysilicon contacts are achieved on n‐type c‐Si wafers that combine excellent surface passivation, resulting in an implied open‐circuit voltage exceeding 700 mV, with a contact resistance as low as 0.02 Ω cm 2 .

Tandem solar cells involving metal-halide perovskite subcells offer routes to power conversion efficiencies (PCEs) that exceed the single-junction limit; however, reported PCE values for tandems have so far lain below their potential due to inefficient photon harvesting. Here we increase the optical path length in perovskite films by preserving smooth morphology while increasing thickness using a method we term boosted solvent extraction. Carrier collection in these films – as made – is limited by an insufficient electron diffusion length; however, we further find that adding a Lewis base reduces the trap density and enhances the electron-diffusion length to 2.3 µm, enabling a 19% PCE for 1.63 eV semi-transparent perovskite cells having an average near-infrared transmittance of 85%. The perovskite top cell combined with solution-processed colloidal quantum dot:organic hybrid bottom cell leads to a PCE of 24%; while coupling the perovskite cell with a silicon bottom cell yields a PCE of 28.2%.

Stacking solar cells with decreasing band gaps to form tandems presents the possibility of overcoming the single-junction Shockley-Queisser limit in photovoltaics. The rapid development of solution-processed perovskites has brought perovskite single-junction efficiencies >20%. However, this process has yet to enable monolithic integration with industry-relevant textured crystalline silicon solar cells. We report tandems that combine solution-processed micrometer-thick perovskite top cells with fully textured silicon heterojunction bottom cells. To overcome the charge-collection challenges in micrometer-thick perovskites, we enhanced threefold the depletion width at the bases of silicon pyramids. Moreover, by anchoring a self-limiting passivant (1-butanethiol) on the perovskite surfaces, we enhanced the diffusion length and further suppressed phase segregation. These combined enhancements enabled an independently certified power conversion efficiency of 25.7% for perovskite-silicon tandem solar cells. These devices exhibited negligible performance loss after a 400-hour thermal stability test at 85°C and also after 400 hours under maximum power point tracking at 40°C.

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite-based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr-doped indium oxide (IZRO) transparent electrodes for such applications, with improved near-infrared (NIR) response, compared to conventional tin-doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to approximate to 77 cm(2) V-1 s(-1)), enabling highly infrared transparent films with a very low sheet resistance (approximate to 18 omega (-1) for annealed 100 nm films). For devices, this translates in a parasitic absorption of only approximate to 5% for IZRO within the solar spectrum (250-2500 nm range), to be compared with approximate to 10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr-doping. Overall, on a four-terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm(-2) short-circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.