The development of soft electronics that can be seamlessly integrated with biological tissue requires intrinsically stretchable rubbery semiconductors with high carrier mobilities. However, the scalable fabrication of rubbery semiconductors remains challenging, particularly using methods that are simple and reproducible. Here we report rubbery semiconductor thin films that are based on a lateral-phase-separation-induced micromesh. A two-polymer blend solution is spin coated on a substrate and forms micromesh morphologies via lateral phase separation, consisting of a continuous organic semiconductor-rich phase and an isolated elastomer-rich phase. The micromesh-structured rubbery semiconductors simultaneously provide efficient charge transport and mechanical stretchability, and by using different polymer blends, we create both p-type and n-type rubbery semiconductor films. The films are used to construct rubbery transistors, complementary inverters and bilayer heterojunction photodetectors that can function even under applied strains of up to 50%. We also create an electronic patch that has a transistor active matrix fully made of rubbery materials and can be used to map the biopotentials of a rat heart. Semiconductor polymer films that are based on a lateral-phase-separation-induced micromesh can be used to create transistors, complementary inverters and bilayer heterojunction photodetectors that can function under applied strains of up to 50%.

As the sensing basis and data source of the new generation of information technology, sensors play a vital role in today’s information age. The purpose of this work is to construct a flexible ferroelectric field-effect transistor (FeFET) as a prototype for a multifunctional sensor for electronic skin. The FeFET device is fabricated from poly(vinylidene fluoride-dimethylsiloxane) (P(VDF-DMS)) and Si/Fe-doped indium oxide (SFIO). Furthermore, this device is capable of three-in-one sensing. Specifically, it can detect temperature changes from 0°C to 70°C and monitors external forces with a linear sensitivity of 4.6 nA·kPa-1 across a pressure range of 50 kPa to 150 kPa. Additionally, electrostatic interaction enables the gadget to detect the approach of a charged item. Furthermore, this gadget was built to detect physiological signals produced by the human body, such as pulse, respiration, and finger movements. It is very bend-resistant and retains transmission properties after 1200 cycles of bending. Moreover, we will examine the device’s sensitivity to temperature variations and charged particles when bent to a radius of 1.09 mm. This design will promote the next generation multifunctional E-skin.

A rubber-like stretchable semiconductor with high carrier mobility is the most important yet challenging material for constructing rubbery electronics and circuits with mechanical softness and stretchability at both microscopic (material) and macroscopic (structural) levels for many emerging applications. However, the development of such a rubbery semiconductor is still nascent. Here, we report the scalable manufacturing of high-performance stretchable semiconducting nanofilms and the development of fully rubbery transistors, integrated electronics, and functional devices. The rubbery semiconductor is assembled into a freestanding binary-phased composite nanofilm based on the air/water interfacial assembly method. Fully rubbery transistors and integrated electronics, including logic gates and an active matrix, were developed, and their electrical performances were retained even when stretched by 50%. An elastic smart skin for multiplexed spatiotemporal mapping of physical pressing and a medical robotic hand equipped with rubbery multifunctional electronic skin was developed to show the applications of fully rubbery-integrated functional devices.

An accurate extraction of physiological and physical signals from human skin is crucial for health monitoring, disease prevention, and treatment. Recent advances in wearable bioelectronics directly embedded to the epidermal surface are a promising solution for future epidermal sensing. However, the existing wearable bioelectronics are susceptible to motion artifacts as they lack proper adhesion and conformal interfacing with the skin during motion. Here, we present ultra-conformal, customizable, and deformable drawn-on-skin electronics, which is robust to motion due to strong adhesion and ultra-conformality of the electronic inks drawn directly on skin. Electronic inks, including conductors, semiconductors, and dielectrics, are drawn on-demand in a freeform manner to develop devices, such as transistors, strain sensors, temperature sensors, heaters, skin hydration sensors, and electrophysiological sensors. Electrophysiological signal monitoring during motion shows drawn-on-skin electronics’ immunity to motion artifacts. Additionally, electrical stimulation based on drawn-on-skin electronics demonstrates accelerated healing of skin wounds.

由于二氧化硅气凝胶具有低密度、高孔隙率、高比表面积、低导热系数等特点,引起了人们的广泛关注.但是,其较差的机械性能和较高的制备成本一直限制二氧化硅气凝胶的应用和推广.采用带有活性端基的二甲基硅油和硅溶胶制备共前驱体溶液,以微乳液法和滴定法分别制备了不同尺寸的二氧化硅气凝胶微球,并探究了甲基含量对其性能的影响.实验结果表明,相对于滴定法,微乳液法制备的气凝胶粒径分布范围较宽,在硅溶胶与硅油体积比相同时,两种方法所制备的气凝胶微球具有相近的比表面积、堆积密度及导热系数;滴定法制备的气凝胶随着甲基含量减少,气凝胶微球的比表面积减小,堆积密度增大,接触角减小,导热系数增大,机械强度增大.

Paper transistors are indispensable devices for paper-based electronic biosensing systems. Existing paper transistors mainly use paper as a mechanical support in a passive fashion. By taking advantage of the cellulose fibers in paper, here we report a transistor-in-paper where paper is employed as an essential part to allow for low-voltage operation, which addresses the long-standing challenge of high-voltage operation with existing paper transistors. Such a low-threshold voltage is because of the ion gel/cellulose fiber composite dielectric formed by modifying the paper with ion gels. We further developed paper-based inverters as examples of logic gates and an integrated tactile sensing mat based on a transistor array–enabled multiplexing device. The results collectively indicate that the ion gel–modified paper leads to a class of flexible, low-voltage transistors and integrated electronic devices, which hold promise in many applications.

alpha-Fe2O3 nanoparticles/multi-wall carbon nanotubes (MWCNTs) hybrids were successfully prepared via a facile one-step hydrothermal method. The MWCNTs enhances the conductivity and provides space for stress and strain during volume expansion of alpha-Fe2O3 semiconductor as the anode for LIBs. The composite shows impressive electrochemical performance when it was used as the electrodes of coin cells. The alpha-Fe2O3 electrode with 50 wt% MWCNTs retains its capacity of 816.8 mAh g(-1) after 50 cycles at the current density of 200 mA g(-1), which is superior to those of contrast samples (bare alpha-Fe2O3, pure MWCNTs, 10 wt%, 30 wt%, 70 wt% MWCNT/alpha-Fe2O3 hybrids). Furthermore, the flexible carbon nanofiber paper (CNP) has also been investigated as a novel current collector with lithium storage for application in LIBs, and the capacity of free-standing alpha-Fe2O3/50 wt%MWCNTs/CNP hybrids electrode can retain 467.2 mAh g(-1) after 50 cycles under the current density of changes from 2500 mA g(-1 )to 200 mA g(-1). The MWCNTs improved cycle performance, enhanced reversible capacities and rate capability of MWCNTs/alpha-Fe2O3 anodes can attribute to the inherent conducting network, shorten electron pathway and faster reaction kinetics. (C) 2018 Elsevier B.V. All rights reserved.

Artificial synaptic devices that can be stretched similar to those appearing in soft-bodied animals, such as earthworms, could be seamlessly integrated onto soft machines toward enabled neurological functions. Here, we report a stretchable synaptic transistor fully based on elastomeric electronic materials, which exhibits a full set of synaptic characteristics. These characteristics retained even the rubbery synapse that is stretched by 50%. By implementing stretchable synaptic transistor with mechanoreceptor in an array format, we developed a deformable sensory skin, where the mechanoreceptors interface the external stimulations and generate presynaptic pulses and then the synaptic transistors render postsynaptic potentials. Furthermore, we demonstrated a soft adaptive neurorobot that is able to perform adaptive locomotion based on robotic memory in a programmable manner upon physically tapping the skin. Our rubbery synaptic transistor and neurologically integrated devices pave the way toward enabled neurological functions in soft machines and other applications.

In this study, one-dimensional porous silicon nanowire (1D–PSiNW) arrays were fabricated by one-step metal-assisted chemical etching (MACE) to etch phosphorus-doped silicon wafers. The as-prepared mesoporous 1D–PSiNW arrays here had especially high specific surface areas of 323.47 m2·g−1 and were applied as anodes to achieve fast charge–discharge performance for lithium ion batteries (LIBs). The 1D–PSiNWs anodes with feature size of ~7 nm exhibited reversible specific capacity of 2061.1 mAh·g−1 after 1000 cycles at a high current density of 1.5 A·g−1. Moreover, under the ultrafast charge–discharge current rate of 16.0 A·g−1, the 1D–PSiNWs anodes still maintained 586.7 mAh·g−1 capacity even after 5000 cycles. This nanoporous 1D–PSiNW with high surface area is a potential anode candidate for the ultrafast charge–discharge in LIBs with high specific capacity and superior cycling performance.

Physically transient electronics, a form of electronics that can physically disappear in a controllable manner, is very promising for emerging applications. Most of the transient processes reported so far only occur in aqueous solutions or biofluids, offering limited control over the triggering and degradation processes. We report novel moisture-triggered physically transient electronics, which exempt the needs of resorption solutions and can completely disappear within well-controlled time frames. The triggered transient process starts with the hydrolysis of the polyanhydride substrate in the presence of trace amounts of moisture in the air, a process that can generate products of corrosive organic acids to digest various inorganic electronic materials and components. Polyanhydride is the only example of polymer that undergoes surface erosion, a distinct feature that enables stable operation of the functional devices over a predefined time frame. Clear advantages of this novel triggered transience mode include that the lifetime of the devices can be precisely controlled by varying the moisture levels and changing the composition of the polymer substrate. The transience time scale can be tuned from days to weeks. Various transient devices, ranging from passive electronics (such as antenna, resistor, and capacitor) to active electronics (such as transistor, diodes, optoelectronics, and memories), and an integrated system as a platform demonstration have been developed to illustrate the concept and verify the feasibility of this design strategy.

The considerable need to enhance data and hardware security suggest one possible future for electronics where it is possible to destroy them and even make them disappear physically. This paper reports a type of destructive electronics which features fast transience from chemical dissolution on-demand triggered in an electrochemical-mechanical manner. The detailed materials, mechanics, and device construction of the destructive electronics are presented. Experiment and analysis of the triggered releasing and transience study of electronic materials, resistors and metal-oxide-semiconductor field effect transistors illustrate the key aspects of the destructive electronics. The reported destructive electronics is useful in a wide range of areas from security and defense, to medical applications

Electronics, which functions for a designed time period and then degrades, holds promise in lots of areas, including medical implants, disposable electronic devices and data securing hardware. Here, we report a new type of transient electronics that is triggered through electrochemical-mechanical manner with robust and reliable mechanical design, low triggering voltage and fast transient characteristics. Such device is constructed through integrating electrochemical-mechanically triggered MEMS module with functional electronics. The electrochemical-mechanical triggering mechanism in this device opens up new vistas for transient electronics designs. Various materials and different type of electronics has been demonstrated.

为提高米糠资源的综合利用率,以新鲜的全脂米糠为原料,制备米糠营养速溶粉.以米糠粉得率为指标,采用挤压和酶水解方法联用,通过响应曲面分析法对α-淀粉酶水解全脂米糠的工艺条件进行优化.结果表明,最优挤压参数为:挤压温度140℃,螺杆转速160 r/min,物料含水量22％,模头孔数4.在该基础上,酶解温度为54.25℃,酶用量1 333.57 U/g,酶解时间120.27 min,pH 6.59时,米糠速溶粉得率达到56.40％,与未经挤压膨化的米糠速溶粉相比较,得率得到了很大的改善.

本研究探析了挤压膨化辅助水酶法提取米糠油的相关机制及工艺参数.研究表明,细胞壁结构破坏及其他多种组分含量的改变是水酶法工艺处理彻底性的重要影响因素,在挤压膨化过程米糠中淀粉降解为低分子质量产物,主要表现为支链淀粉含量的降低,同时淀粉糊化度大幅增加;米糠蛋白在此过程中发生局部变性,米糠蛋白变性热焓变的改变与蛋白质二级有序结构单元缺失有关,即较多的α-螺旋结构转变为无规卷曲结构.应用响应面寻优分析方法对工艺条件进行分析,寻优响应结果为:蛋白酶酶解温度为56.15℃,加酶量为2％,液料比为1:7,酶解时间为1.98 h,在此条件下,提油率有最优值为85.28％.

ZnO nanostructures have been electrochemically synthesized on three-dimensional, interconnected, and porous carbon nanofiber Buckypaper substrates. Using potentiostatic deposition, wurtzite ZnO with controlled microstructure and morphology has been deposited. While all ZnO deposits exhibit a band gap value of around 3.2 eV, impurity states determined by photoluminescence (PL) measurements show strong deposition potential influences. Both the green and red emissions corresponding to respective oxygen vacancies and oxygen rich impurity states can be identified. Thermal annealing can greatly reduce oxygen vacancy concentration but has limited effects on the oxygen rich defects. This study suggests a cost-effective and high-throughput approach in deposition of ZnO nanostructures suitable for photovoltaic applications.

To enhance the conductivity and reduce the surface roughness of ZnO films, electrodeposition of ZnO films on the ITO substrate had been studied for the application of inverted organic solar cells. ZnO films with the grain size range from 0.4 to 2 mu m had been fabricated by varying the temperature, ion concentration and deposition potentials. Moreover, ZnO films with the impurity energy level of 2.28 +/- 0.20 eV origin from the oxygen vacancy, had been found in the PL emission. It is found that as the applied potential went more negative, the concentration of the oxygen vacancies increased, and the emission peak of the impurity level had higher intensity By changing the ion concentration and temperature of the electrolyte, the controllable microstructure and impurity levels of ZnO thin films had been achieved.