A high performance Ge FinFET CMOS invertor with $\mathrm{I}_{\text{ON}}=2\quad \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}\ =1\mathrm{V},\quad \mathrm{S}.\mathrm{S}.=64\quad \text{mV}/\text{dec}, \mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.
We propose a new single-electron (SE) circuit inspired by the principles of molecular computing. SE circuits can control individual electrons and have features such as stochastic operation and nonlinearity. However, an optimal information processing method has not been established yet. In contrast, molecular computing is being studied as an information-processing method using molecular reactions [1] . In the referenced molecular computing theory, the problem is solved by mapping the concentration of molecules to initial and steady states, the reaction rate of molecules to state transition probabilities, and for each state to the type of molecule (Fig. 1). By mapping the behavior exhibited by SE circuits to this model, we believe that a new SE information-processing circuit can be realized.
A 1kb macro of One Time Programming (OTP) memory, implemented by a novel architecture of a 2T PMOS structure, has been realized on a foundry pure logic 28nm HKMG CMOS platform. The feature size of a unit cell is 2T per cell with 0.04995um 2 . The experimental results show that the designed macro exhibits high programming (PGM) speed of 100ns at 4.6V, the read voltage can be smaller than 1.15V within smaller than 10ns of sense time, and excellent data retention under one-month baking at 150°C. More importantly, it demonstrated high endurance, immunity from the read and program disturbances, which is superior to the mainstream technologies of anti-fuse OTP. This OTP is also expected to be scalable to advanced node such as FinFET and provides an ideal and reliable solution for the hardware security in IoT and 5G era.
In this work, the Back-side Power Delivery Network (BSPDN) based on the NSFET and FINFET standard cell arrays are constructed for the thermal analysis in comparison of front-side power delivery networks (FSPDN). The performance metrics reflecting the IR drop and hotspot temperature are proposed to evaluate the characteristics of BSPDN. The impacts of different activity factors, interconnecting metals and structure ratios are investigated. The results indicate that BSPDN faces the severer thermal challenges than FSPDN after the substrate thinning. And the design guidance of BSPDN is given for improving its performance at advanced node.
We propose a new single-electron (SE) reaction-diffusion (RD) circuit that can express traveling plane waves. While SE circuits have advantages such as nonlinearity and stochastic behavior, a suitable information processing method has not yet been established for them. Thus, we focus on the behavior of a photo-responsive (PR) Belousov-Zhabotinsky (BZ) reaction, one of RD systems, to develop a suitable information processing method. Reportedly, the PR-BZ reaction can generate plane waves, and the waves can be used to represent logic gates. Here, we designed the new SE-RD circuit that can generate the desired plane waves. In simulation results, we found our circuit can operate as desired. We believe this circuit can be used to construct a logic gate device as same as the PR-BZ reaction.
