Identifying an Interconnect that will replace Cu will require the identification of a material that can meet a variety of materials design requirements and constraints. We propose an approach to simplify these hard to compute design to constraints into simple metrics. With the help of multi-objective optimization techniques, we are able to screen 15,000+ candidate metals rapidly. We present the workflow to identify candidate materials for high stack and low stack interconnects based on this approach.
In this paper, a new cascode, namely dual-gate (DG) MOSFET is designed and fabricated in 40nm CMOS technology to realize smaller area, reduced parasitic RC, and most importantly enhanced power gain up to 140GHz and ultra-wide bandwidth compared to the conventional cascode, aimed at D-band (110~170 GHz) amplifiers design.
For the first time, we apply fast measurement techniques to evaluate the positive bias stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with HfO 2 as the gate dielectric. Nonnegligible fast recovery characteristic of the abnormal threshold voltage (V th ) shift was recognized, and the significant difference between slow and fast measurements could be observed.
A novel bit-by-bit repair design innovation effectively repairs 1 bad bit by 1 redundancy bit and enables STT-MRAM technology to meet NV-RAM specifications and high yield. The test chip demonstrates 10ns Read/Write speed, 1E14 endurance and 125℃/10years retention.
We demonstrate ferroelectric switching in CeO2 doped Hf0.5Zr0.5O2 (HZCO) thin films and their applications for back-end-of-line (BEOL) compatible embedded memories. At low cerium oxide doping concentrations (2.0 - 5.6 mol%), the polar orthorhombic phase is stabilized after annealing at temperatures below 400°C. HZCO ferroelectrics show reliable switching characteristics beyond 1011 cycles in TiN/HZCO/TiN (MFM) capacitors, several orders magnitude higher than the identically processed Hf0.5Zr0.5O2 (HZO) capacitors, without sacrificing polarization and retention. We also report enhanced endurance (> 1010 cycles) in HZCO metal-ferroelectric-insulator-semiconductor (MFIS) stacks, which is promising for ferroelectric FET memory applications.
