This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.
Epitaxy is a powerful technique used in the construction of semiconductor devices, where a monocrystalline film is grown on a surface or structure to create a perfect foundation layer. This technique is used for several purposes, including the deposition of crystalline films with controlled electrical properties, modification of mechanical attributes, and formation of precise junctions with low defect levels. In this paper, we will explore how material and junction engineering can be achieved using epitaxy.
Gallium oxide (Ga 2 O 3 ) has attracted great attention as a next-generation power electronics material because of its extremely large bandgap energy of 4.5 eV and the existence of high-quality single-crystal substrates that can be manufactured from melt-grown bulks [1 –4]. Although it is not well known, Ga 2 O 3 possesses excellent applicability of ion implantation doping processes unlike conventional compound semiconductors.
As CMOS device scaling continues beyond 5/3 nm nodes, and new device architectures (3D-devices) emerge, the thermal budget requirements have become more stringent. Thermal budget trends, favoring high temperatures at very short time durations to enable high dopant activation and minimize dopant diffusion, have only been accelerating. It is well known that millisecond (msec) Laser Spike Anneal (LSA) improves dopant activation with minimal diffusion. Nanosecond laser anneal in the melt regime could enable further progress through dopant super-activation above the solid solubility limit while practically eliminating dopant diffusion in the solid phase.
The benefits of the wide bandgap semiconductor silicon carbide (SiC) for use in high-voltage and low-loss power devices [1] are driven by fundamental material properties of high breakdown field and thermal conductivity. Ion implantation is a key doping technique in SiC device processing which requires efficient methods for dose monitoring after room temperature or elevated temperature implantation. In this work we apply photo-modulated reflectance (PMR) as an effective technique to monitor implantation dose and implantation temperature through electro-optic and thermo-optic effects influenced by residual defects in as-implanted SiC. Note, the PMR technique is widely used for implantation process monitoring in silicon device manufacturing. The present work on 4H-SiC is based on our previous experience with the PMR technique applied for Si wafers implanted with different dopants in a wide range of ion energies and ion doses [2 –4].
