In this work, the effect of the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) when operating in a temperature range from 200K to 450K are evaluated experimentally. From 200K till 350 K the transfer curve of the 600nm gate length device shows the Zero Temperature Coefficient (ZTC) point clearly. However, for temperatures over 350 K, the threshold voltage (V TH ) shift towards higher gate voltage, which prevents the presence of ZTC bias point. This behavior is better explained through the transconductance (gm) curve where the HEMT and MOS conductions of the devices are being affected differently by temperature, resulting in a competition of effects that changes the behavior of the device in both, gm max and V TH as a function of temperature.
This study investigates carrier mobility and its degradation factors as a function of temperature for 2-level stacked nanowire MOSFETs in the temperature range of 120 K to 400 K. The Y-function method was employed to obtain low-field carrier mobility and mobility degradation factors with temperature. Results show that decreasing temperature increases the peak value of transconductance for all device geometries. The decrease in temperature also affects the gate voltage value at which the peak of transconductance and the peak of low-field carrier mobility is reached. As the temperature decreases, the gate voltage required to reach these peak values increases. The first order degradation factor was found to decrease with the increase in temperature, and the second order factor increased with temperature.
This work presents the electrical characterization of Ω-gate SOI nanowire MOSFETs in the temperature range from 82 K to 330 K. Devices with different fin widths and channel lengths are compared. The comparison is performed using experimental data looking for some of the fundamental electrical parameters such as threshold voltage, inverse subthreshold slope, and carrier mobility over the temperature. For short-channel devices with L=40 nm an analysis of the mobility degradation coefficients over the temperature is performed.
This article presents a low-cost ultraviolet radiation sensor using epoxy-resin optical filters over MOS tunneling diodes as photodetectors with Al/SiN x O y (2.1 nm)/Si-p structure. The epoxy-resin optical filters were manufactured by casting in silicone molds a mixture of Bisphenol-A Diglycidyl Eter Resin and low density Ciclic Alyphatic polyamine diluted in Anhydrous Benzyl Alcohol. The separation of the total UV radiation (UVA+UVB+ UVC) for wavelength lower than 400 nm was obtained from the difference between the photocurrents (ΔI ph ) measured for the transparent epoxy-resin (0.0 wt%) and the epoxy-resin with 1.0 wt% benzophenone, respectively. A dimensionless correction factor (CF) was obtained to discount the effect of the background VIS radiation for wavelength higher than 400 nm. As a result, the CF parameter obtained was (0.89 ± 0.01) and the corrected UV photocurrent difference was 0.89ΔI ph = (3.83 ± 0.04) mA. For this case, the responsivity was evaluated as the ratio between the corrected UV photocurrent difference and the total UV irradiance (λ ≤ 400 nm which resulted in a), high value of (0.74 ± 0.05) A/W compared to the ones reported in literature.
In this paper, a comparison between the basic current mirror configurations (Common Source, Cascode, and Wilson) based on nMOS Junctionless Nanowire Transistors (JNTs) is performed for the first time through TCAD simulations. Those building blocks are biased at the same conditions in the output stage by a fixed voltage, while a normalized current is applied in the input stage. In that regard, the main figures of merit of the current mirrors, such as current transfer ratio and small signal output resistance, are analyzed in order to understand the analog behavior of the JNT and its application as a current source building block.
