With the rapid development of in-memory sensing and computing, ferroelectric field-effect transistors (Fe-FETs) have emerged as promising candidates in neuromorphic computing due to their simple structure, reliable programmability and low energy consumption. High-efficiency neuromorphic hardware system requires synaptic transistor to follow a linear/symmetric weight updating rule under control of a simple stimulus scheme. However, in most 2D Fe-FETs reported so far, achieving such linear and symmetric weight updates typically relies on an incremental stimulus scheme, which undoubtedly increase the hardware complexity and cost. Here, we demonstrate a reconfigurable SnS2/dual-Al2O3/Hf0.5Zr0.5O2 Fe-FET that exhibits robust multilevel conductance states with a good linearity/symmetry under equal electrical pulse stimuli. Moreover, the device integrates nonvolatile and volatile resistance modulation capabilities under light stimuli. The dual-Al2O3 capping layers and ferroelectric polarization of Hf0.5Zr0.5O2 are identified as key factors enabling the rich conductance plasticity with flexible time dynamics. The device is applied in in-memory image processing, MNIST handwritten digits recognition and reservoir computing with high performance. Our work provides a novel strategy to design a charge trapping-involved ferroelectric field-effect transistor featuring both a linear weight updating and a wide tunable dynamics window, demonstrating significant potential in future high-performance and low-cost neuromorphic computing.

Enhancing efficiency and stability requires minimizing carrier transport losses, improving selectivity, and suppressing non-radiative recombination, particularly at the wide-bandgap (WBG) perovskite/electron transport layer (ETL) interface. In this study, we introduce a dual-molecule surface passivation strategy that combines phenethylammonium iodide (PEAI) with propane-1,3-diammonium diiodide (PDAI2). This co-passivation replaces weak van der Waals and π–π interactions with strong ionic bonding that occurs specifically at the surface and near the grain boundary regions of the three-dimensional perovskite absorber layer. Effectively suppresses the formation of the (PEA)2PbI4 2D phase and promotes a 2D PDAPbI4 perovskite phase, enhancing operational stability and increasing the charge carrier mobility. The resulting WBG perovskite solar cells (PSCs) achieve power conversion efficiencies (PCEs) of 23.54% with high open-circuit voltages (Voc) of 1.26 V. The unencapsulated device retains >95% of its initial PCE after 1200 h under ISOS-L-1 conditions and > 90% after 1085 h at 65 °C in N2 atmosphere.

Metal halide perovskites exhibit remarkable properties for photovoltaic applications, yet their susceptibility to ion migration within perovskites is a critical phenomenon that profoundly impacts their functionality and stability. Past investigations have generally focused on indirect or destructive experimental techniques used for probing ion migration. In this perspective, we employed the nondestructive technique, Rutherford backscattering spectroscopy (RBS), to resolve the elemental composition in different layers of perovskite solar cells (PSCs) and used it to disentangle the extrinsic and intrinsic ion migration. We demonstrate here the probing capacity of RBS for two different types of PSCs, including inorganic lead halide perovskites and mixed-cation lead halide perovskites, and a complete device. The study highlights RBS as a reliable analytical tool for tracking elemental redistribution in fresh or aged devices. Furthermore, we discusses the diverse methodologies employed to study extrinsic and intrinsic ion migration and interlayer diffusion between various layers of perovskite devices, ranging from experimental techniques to XRUMP and SIMNRA simulations.

Optimized interfacial charge transport and reinforced interfacial bonding are indispensable for achieving efficient carrier separation and constructing advanced heterogeneous systems toward photocatalytic hydrogen evolution. In this work, a NiCo2S4/Cd0.5Zn0.5S (NCS/CZS) Ohmic junction was rationally designed and constructed to modify semiconductor-based photocatalysts. The synthetic strategy ensures the uniform dispersion of CZS nanoparticles on NCS nanoflowers with intimate interfacial contact. The introduction of NCS nanoflowers significantly enhances the photocatalytic hydrogen evolution performance of CZS. Impressively, the optimized NCS-0.04/CZS heterojunction reaches an optimal hydrogen production activity of 92.62 mmol h−1 g−1, showing a 20-fold enhancement relative to pure CZS. Efficient charge separation triggered by the intrinsic electric field formed at the NCS/CZS Ohmic junction interface accounts for the remarkable improvement in photocatalytic performance. Specifically, the Ohmic junction efficiently facilitates the directional migration of photogenerated electrons from CZS to NCS and effectively suppresses their backflow. Through a combination of experimental studies and theoretical simulations, the fundamental mechanism underlying photocatalytic hydrogen evolution was elucidated. This research is expected to provide a novel perspective and pathway for the design and fabrication of high-performance photocatalysts.

van der Waals (vdW) heterostructure photodetectors constructed from two-dimensional (2D) semiconductors have driven progress from passive photodetection to actively tunable and multifunctional optoelectronic devices. In particular, 2D ferroelectric semiconductors may enhance photodetection by switchable, nonvolatile polarization fields. However, the influence of electric-field-induced band structure modulation in ferroelectric materials on the electrical and optoelectronic performance of heterostructure devices remains insufficiently explored. In this work, we fabricate a SnS2/α-In2Se3 heterostructure photodetector that exhibits bias-voltage-controlled, ferroelectric state-dependent, bidirectional modulation of carrier mobility and shows an exceptionally high photoresponsivity of 52.24 A·W-1 under an optical power density of 35.6 μW·cm-2. These exceptional features of the SnS2/In2Se3 photodetector mainly arise from enhanced carrier separation driven by the modified built-in interfacial electric field and the polarization fields of In2Se3. Besides, due to the presence of the built-in electric field, the SnS2/In2Se3 photodetector exhibits a rise time that is 14.53 and 2.06 times faster than that of SnS2- and In2Se3-only devices. Therefore, we elucidate a unique interfacial modulation mechanism in 2D ferroelectric/semiconductor systems, providing a new strategy for the design of tunable, energy-efficient, high-sensitivity photodetectors and their imaging arrays.

The development of S-scheme heterojunction photocatalysts for solar-driven hydrogen production via water splitting was of strategic importance in achieving carbon neutrality and peak carbon emissions. Herein, a Sscheme Mn0.5Cd0.5S@2H-MoS2 heterojunction was successfully constructed by in-situ growth of ultrathin 2HMoS2 nanosheets on raspberry-like Mn0.5Cd0.5S nanoclusters. The optimal Mn0.5Cd0.5S@2H-MoS2-2 catalyst exhibited exceptional photocatalytic performance, achieving a remarkable hydrogen evolution rate of 22.01 mmol g- 1 h- 1 under visible-light irradiation (lambda >= 400 nm), which was approximately 8.5 times higher than that of pristine Mn0.5Cd0.5S, along with exceptional stability and reusability. The significantly enhanced photocatalytic activity can be attributed to the broadened spectrum of light harvesting and the efficient electron transfer enabled by the S-scheme heterojunction. This unique configuration not only preserves the strong redox potential of both constituents but also establishes a built-in electric field at the heterointerface that dramatically facilitates the separation and transport of photogenerated charge carriers. Lastly, using the findings of experimental characterizations and density functional theory (DFT) calculations, a probable reaction mechanism is suggested. Thus, this study offers an innovative approach for creating S-scheme semiconductor heterojunction photocatalysts that effectively produce H2 by water splitting.

ABSTRACT Perovskite–silicon tandem solar cells (PSTSCs) represent a transformative photovoltaic technology, with certified power conversion efficiencies (PCEs) approaching approximately 35%, surpassing the limits of single‐junction devices while retaining potential for cost‐effective, scalable deployment. Yet, the path from lab‐scale records to commercial viability is hindered by persistent challenges in long‐term stability, large‐area fabrication, and real‐world reliability. Here, we address key degradation mechanisms, ranging from intrinsic issues like halide segregation and interfacial delamination to extrinsic stressors such as dust, dew, hail, partial shading, and biogenic contamination, as well as system‐level concerns including hotspot formation, electrode corrosion, potential‐induced degradation (PID), and stress‐induced current mismatching. We further evaluate installation‐dependent performance factors (tilt angle, mounting height, albedo, wind, and thermal cycling) and review advances in film uniformity, interface engineering, and light management. Economic considerations, including levelized cost of electricity (LCOE) benchmarks, are assessed alongside the urgent need for standardized IEC/ISOS testing and independent validation. By integrating efficiency, stability, and cost into a unified framework, we propose a roadmap toward the 25‐year operational lifetime required for widespread PSTSC adoption, positioning them as a cornerstone of a sustainable, low‐carbon energy future.

Wide-bandgap perovskite solar cells (WBG PSCs) are pivotal for tandem photovoltaics but face critical challenges such as severe interfacial non-radiative recombination and light-induced halide phase segregation, which limit both efficiency and operational stability. To address these issues, an ideal passivation strategy should simultaneously suppress defect states at surfaces and grain boundaries, inhibit ion migration, and enhance interfacial charge extraction. This study investigates the distinct influences of two isomeric passivators (linear 4-Fluoro-Phenylammonium-iodide (p-F-PEAI) and branched 4-F-alpha-methylbenzylamidodide (p-F-MBAI) on WBG (1.67 eV) semi-transparent PSCs (ST-PSCs). Theoretical and experimental analysis reveal complementary passivation mechanisms, showing that p-F-PEAI preferentially forms a stable surface-adlayer and facilitates a twodimensional (2D) perovskite phase, whereas p-F-MBAI demonstrates a superior ability to penetrate into grain boundaries for bulk defect passivation and promotes significant grain growth. Consequently, p-F-MBAI-passivated devices achieve a remarkable fill factor (FF) of 83.32% and a power conversion efficiency (PCE) of 20.46%, with negligible hysteresis. P-F-MBAI-passivated PSCs also demonstrate exceptional stability, retaining 98.4% of their initial PCE after 4560 h of storage in N2 without encapsulation. Furthermore, the resulting four-terminal tandem solar cell (4T-TSCs), integrating the optimized ST-PSC with a silicon cell, achieves a combined PCE of 29.48%. This work highlights the importance of tailored molecular geometry in passivator design, demonstrating that a branched configuration can enable effective bulk passivation and yield high-performance, stable semitransparent and tandem photovoltaic devices.

Bismuth (Bi), with its abundant reserves, holds great potential as a plasmonic-enhancing component in composite photocatalysts. A benzothiadiazole-triazine-functionalized two-dimensional olefin-linked (vinylene-linked) CPP enhanced by plasmic Bi nanoparticles (NPs) was synthesized. Localized surface plasmon resonance (LSPR)-assisted A-π-A type conjugated polymer (CPP) photocatalysts exhibit significant advantages in energy band design, showcasing their uniqueness in conjugated units and pore size. The benzothiadiazole-triazine olefin-linked CPP possessed an A-π-A characteristic structure, along with hierarchical porous characteristics, and a specific surface area of 569.16 m2 g-1. In this study, TMTBT-CPP was synthesized using 2,4,6-trimethyl-1,3,5-triazine (TMT) and 4,4'-(benzothiadiazole-4,7-diyl)dibenzaldehyde (BT) as building blocks, and Bi was grown in situ on the material surface to form a plasmonic-CPP heterostructure. This heterostructure enhanced visible-light harvesting and accelerated electron transfer. Results showed that the photodegradation efficiency of Bi/TMTBT-1 (Bi : TMTBT = 1 : 1) was 85.7% for degrading 50 mL of rhodamine B solution for degrading 50 mL rhodamine B solution with an initial concentration of 20 mg L-1 over 1 h, and its catalytic activity was significantly superior to that of TMTBT alone.

Shape-stabilized composite phase change materials are attractive for solar-thermal energy storage but are often limited by leakage, weak mechanical strength, and insufficient photothermal responsiveness. Herein, we report a one-step Pickering emulsion strategy to fabricate a flexible aramid nanofiber (ANFs)-based composite phase change film (APCMF) incorporating 10 wt% CoFe2O4 nanoparticles. ANFs simultaneously function as Pickering emulsifiers and structural skeletons, enabling uniform encapsulation of eicosane within a robust aerogel network. The resulting APCMF achieves a high latent heat storage of 143.2 J/g, retaining an impressive 141.3 J/g (98.7% retention) after 200 thermal cycles. Furthermore, its unique mortar-concrete-like framework ensures remarkable mechanical robustness, exhibiting a tensile strength of 1.22 MPa and sustaining over 1000 bending cycles without structural failure. Moreover, the incorporation of CoFe2O4 endows the film with strong solar absorption and efficient photothermal response, allowing a rapid temperature rise to 75.6 degrees C under simulated sunlight, far surpassing pure eicosane. This scalable methodology integrates leakage resistance, thermal reliability, mechanical flexibility, and solar-thermal conversion into a single material platform, demonstrating significant potential for flexible thermal management, wearable electronics, and solar energy harvesting applications.

Three Mn(II) complexes, [R-BPP]2[MnCl4] (BPP = benzyl(triphenyl)phosphonium, R = H, Me, CN), consisting of quaternary phosphonium cations and tetrachloromanganate(II) anions, were synthesized. They exhibit red-shifted emission (508 → 521 nm) via substituent effects. Encapsulation of [CN-BPP]2[MnCl4] within UV-curable acrylate produces stable films with tamper-evident security features under UV light, retaining structural integrity for more than 90 days.

Fabricating high-performance perovskites in ambient air is desirable for low-cost and large-scale patterned manufacture of light-emitting diodes (LEDs). However, perovskites inherently exhibit high sensitivity to moisture and oxygen, which considerably hinders their fabrication under ambient air conditions. Here, we demonstrated an interface-reconstruction strategy which enabled air-processed CsPbI3 quantum dot (QD) films for high-performance LEDs. Ethyl acetate/tris(1-naphthyl)phosphine oxide (EA/TNPO) treatment was used to polish and passivate the interface between the QD film and the electron transport layer, thereby providing a protective coating against moisture and oxygen. We fabricated LEDs based on the spin-coated QD films, achieving a maximum external quantum efficiency (EQE) of 20.2% and a long half-life of over 100 days. We also fabricated LEDs based on the inkjet-printed QD films, highlighting the practical application potential for patterning techniques. Our work develops high-quality air-processed perovskite films and demonstrates their great prospect for low-cost optoelectronic devices in the future.

In the one-step spin-coating method, the high-melting-point additives often co-precipitate during perovskite crystallization and aggregate at the interface, leading to spatial inhomogeneity and surface stress. This presents a challenge for achieving both high efficiency and good stability simultaneously. In this study, we report the use of highly diffusible 3,4,5, trifluoro-4 '-(trans-4-propylcyclohexyl)-biphenyl (3,4,5-TTPCB) as in-situ passivation (ISP) of perovskite materials. Additionally, phenethylammonium (PEA(+)) cation properties in the presence of Cl-, I-, Br-, are enhanced with carbazole (Cbz) interaction, and it is also used for perovskite surface passivation (SP) to improve perovskite chemical and physical stability (oxygen and moisture). The resulting ISP3mol%(3,4,5-TTPCB)/SP2.5mol%(PEACl+Cbz)-treated p-i-n PSC (1.6 eV) achieves a power conversion efficiency (PCE) of 24.19 % with a fill factor (FF) of 83 % for a 0.05-cm(2) device, which is attributed to the reduction in nonradiative recombination. The unencapsulated dual-modified devices retain >= 90 % of their initial PCE under ISOS-D-1 and ISOS-L-1 conditions after 1,200 h, exhibit low phase segregation under ISOS-D-3 (85 degrees C, 85 % RH), and in ambient conditions (RH: similar to 35 +/- 5 %, 25 +/- 5 degrees C). We believe that this dual-modification approach represents a promising strategy for improving the long-term stability of high-performance PSCs.

A processing window exists during the transition between film formation and the annealing step in the two-step method employed for the fabrication of FAPbI3 perovskite solar cells, independent of whether the aim is to produce a batch of small-area or large-area devices. A significant variance in the power conversion efficiencies of perovskite devices, resulting from different processing windows, leads to a marked decrease in device reproducibility. To investigate the changes occurring within the perovskite wet film during the processing window, this study utilized nitrogen protection packaging technology to monitor the crystallization process of the perovskite wet film outside the glove box. The observation indicated non-uniform intermediate-phase reaction rates. The incorporation of 3-cyanopyridine into the twostep method decelerated the crystallization kinetics of the perovskite wet film, suppressing the formation of delta-FAPbI3. Such modification expanded the processing window time, enabling the preparation of perovskite films with superior crystallinity and minimal defects. The n-i-p type perovskite solar cells exhibited a power conversion efficiency (PCE) of 25.12%. The findings demonstrate that this modification method effectively extends the processing window time of the twostep method, leading to the fabrication of perovskite devices with optimal performance and high repeatability. This represents a novel strategy for the batch production of perovskite devices and the manufacturing of large-area perovskite films.

Perovskite solar cells (PSCs) have achieved remarkable power conversion efficiency (PCE), but their instability under ultraviolet (UV) illumination remains a critical barrier to commercialization. Here, we introduce 1-naphthoic acid (1-NA) as a small and multifunctional additive to mitigate UV-induced degradation in PSCs. The 1-NA molecule stabilizes the perovskite lattice, suppresses ion migration, enhances structural integrity, and reduces UV photodegradation through passivation and high-energy photon conversion via energy relaxation processes. The champion device incorporating 1-NA achieved a PCE of 25.36%. Crucially, the 1-NA engineered device exhibits an exceptional optimization effect on operational stability. It retains 84% of its initial PCE after 240 hours under intense UV light (50 mW cm-2), compared to only 37% for the control, and maintains 83% after 1000 hours of continuous AM1.5G illumination. This work provides a robust strategy for developing high-efficiency perovskite optoelectronic devices with good stability through rational molecular engineering.

Metal halide perovskites have attracted extraordinary attention due to their excellent photoelectric properties and diverse crystal structures. The introduction of transition elements through doping serves as a potent strategy to modulate their physical and chemical properties. This approach has proven effective in imparting ferromagnetic semiconductor characteristics, which are essential for applications in spin light-emitting devices and semiconductor spintronics. Here, we synthesized Cs4PbBr6 and Mn-doped Cs4PbBr6 (Mn:Cs4PbBr6) perovskite single crystals. Magnetization measurements reveal that Mn:Cs4PbBr6 exhibits a ferromagnetic behavior at 30 K. Complementary density functional theory calculations suggest that the observed magnetism arises from the introduction of single-spin energy states by the doped Mn in the bandgap. Moreover, we observed a negative photoconductivity (NPC) effect at room temperature in the Mn-doped samples. This NPC phenomenon is attributed to the absorption and desorption of oxygen molecules on the surface of Mn:Cs4PbBr6 crystals. Our findings provide a foundation for the development of highly selective gas sensors in the future.

Metal halide perovskite materials have demonstrated considerable potential as gain media for laser diodes. However, current research on perovskite lasers predominantly focuses on the visible light region. The development of near‐infrared perovskite lasers with emission wavelengths beyond 850 nm remains a significant challenge. Herein, fully solution‐processed near‐infrared perovskite lasers with tunable emission wavelengths spanning from 872 to 948 nm are presented. By controlling the crystallization time of the FASnI 3 perovskite films, near‐infrared lasing at room temperature without external cavities is realized. Through modulating the dimensions of the perovskite films via the incorporation of a large cation PEA + , quasi‐2D perovskites with adjustable lasing wavelengths and enhanced stability are successfully developed. These findings provide a novel approach for the fabrication of near‐infrared lasers, which will facilitate the advancement of lead‐free perovskite lasers.

Surface plasmon polaritons (SPPs) can produce a confined electromagnetic field near the metal-dielectric interface, allowing energy to be compressed into a scale smaller than the optical diffraction limit. The characteristic enables the fabrication of sub-wavelength-sized, ultra-low-threshold, ultrafast, specific polarization, room-temperature lasing nanolasers, which is especially meaningful for the lasers emitting long wavelength light. In this work, we developed a Cs0.1MA0.9SnI3 perovskite plasmonic laser based on a metal-insulator-semiconductor (MIS) structure, demonstrating a low threshold of 281 mu J cm-2, a tunable emitting wavelength from 973 to 1023 nm, strong mode confinement at the cutoff height of 90 nm, and a rapid response lifetime of 29.43 ps. Our study represents the first, to the best of our knowledge, theoretical design and experimental production of perovskite plasmonic nanolaser with a tunable emitting wavelength near 1 mu m, filling a significant research gap and paving the way for the application of perovskite nanolasers in optoelectronic integration and information technology. (c) 2025 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.