Abstract. Ieodo Ocean Research Station (IORS), a research tower (~ 40 m a.s.l.) for atmospheric and oceanographic observations, is located in the East China Sea (32.07° N, 125.10° E). The IORS is almost equidistant from South Korea, China, and Japan and, therefore, it is an ideal place to observe Asian outflows without local emission effects. The seasonal variation of ozone was distinct, with a minimum in August (37 ppbv) and two peaks in April and October (62 ppbv), and was largely affected by the seasonal wind pattern over east Asia. At IORS, six types of air masses were distinguished with different levels of O3 concentrations by the cluster analysis of backward trajectories. Marine air masses from the Pacific Ocean represent a relatively clean background air with a lowest ozone level of 32 ppbv, which was most frequently observed in summer (July–August). In spring (March–April) and winter (December–February), the influence of Chinese outflows was dominant with higher ozone concentrations of 62 and 49 ppbv, respectively. This study confirms that the influence of Chinese outflows was the main factor determining O3 levels at IORS and its extent was dependent on meteorological state, particularly at a long-term scale.

The performance and reliability of 3-D NAND cells fabricated by TCAT (Terabit Cell Array Transistor) technology have been improved significantly via a damascened metal gates and a controlled offset between BL contact and select transistor. The damascened metal gate providing sufficiently low resistance is achieved by adopting a novel metal process. Highly suppressed disturbance property is achieved by the appropriate offset which reduces the leakage current through the select transistor. It is proved that the TCAT NAND is a manufacturable technology in terms of reliability as well as performance in a channel hole with a diameter of 90nm.

Vertical NAND flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. Damascened metal gate SONOS type cell in the vertical NAND flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.

Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal SSTFT process , periphery only Co salicidation, and W shunt wordline scheme.

2005 International Conference on Solid State Devices and Materials,High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S3 (Stacked Single-crystal Silicon) Technology and KrF lithography