The results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the two-photon absorption (TPA) of tightly focused femtosecond 1200 nm laser radiation are presented. Comparative measurements obtained by the single-photon absorption (SPA) of picosecond 1064 nm laser radiation in the same device revealed the improved 3D-spatial resolution of TPA compared to SPA-based pulsed laser testing. The effective depth of single event latchup (SEL) sensitive layer estimation was calculated from experimental results.

The application of two-photon absorption (TPA) for local nonequilibrium charge generation in the semiconductor microelectronic structures improves the 3D-spatial resolution of optical testing techniques (such as OBIC and similar), as compared to those, based on single-photon absorption (SPA). In this paper we discuss the results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the TPA of tightly focused femtosecond laser radiation. The experiments were performed at the setup, which includes the tunable optical parametric amplifier with output wavelength in 900…1200 nm region. The results were compared to those obtained by SPA technique on the same experimental setup.

A method is described for localizing damaged areas on IC chip using ionization response maps. The method can provide some essential information to IC designers to help them improve its resistance to failures.

Опыт наблюдения одиночных тиристорных эффектов (ТЭ) при проведении испытаний электронной компонентной базы (ЭКБ) в АО «ЭНПО СПЭЛС» позволил сформулировать рекомендации для разработчиков аппаратуры по разработке мер предотвращения одиночного отказа в результате развития одиночного ТЭ.

The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.

Non-stable single event latch-ups (SELs) were analyzed in this paper which vanished without power cycling.This effect depends on the operating conditions of the device under test.The instability of SEL is due to the power drops below the holding voltage.The paper presents experimental results proofing this mechanism of the nonstable SEL occurrence.

The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.

Test method is described and obtained results presented for ADC 7809ALP with internal latchup protection system.

The ELDRS enhancement factor versus total absorbed dose and dose rate is considered in a wide range of doses.

SEE sensitivity of integrated circuits is characterized by their SEE cross-section vs. linear energy transfer dependences- σ(LET) which are obtained through ion tests. Often those σ(LET) dependencies have such few data points that it's much trouble to approximate them correctly. In those cases σ(LET) can be complemented with SEE cross-section vs. laser energy σ(J) obtained from laser tests. At the same time, σ(J) rarely follow exactly the shape of σ(LET) due to the metallization non-uniformly over chip area. Nevertheless, σ(J) can be corrected against this non-uniformity by examining the ionization response maps ΔU(x, y). In this work we demonstrate that such corrected σ(J) correlates better with σ(LET) by the example of single event transients (SET) in two types of UHF mixers.

Представлены результаты расчетно-экспериментального моделирования одиночных тиристорных эффектов при воздействии сфокусированного лазерным излучением с тыльной стороны кристалла – со стороны подложки. Проанализированы возможности применения методики локального облучения для оценки эквивалентных линейных потерь энергии заряженных частиц в случае лазерного воздействия со стороны подложки. Проведено сравнение экспериментальных результатов, полученных на лазерной установке и ускорителях заряженных частиц для ряда современных БИС.

The effect of the direction of laser polarization on the transient radiation response of an IC memory device implemented using CMOS technology 0.18 μm is estimated. The effect of laser polarization is investigated both for local exposure and exposure on the entire crystal. It is shown that the direction of laser polarization should be taken into account when simulating local dose rate effects.

Lasers can be used in combination with ions for SEE testing. The most practical technique of such tests is based on the comparison between the SEE cross-section vs. ion LET and the SEE cross-section vs. laser pulse energy. However there can be a significant error in the latter curve since the effective laser energy is not the same over different locations on the chip due to the IC's metallization nonuniformity. This nonuniformity can be taken into account through the optical beam induced current (OBIC) examination which is considered in this article.

The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared.

The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed.

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.

Compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam are presented. The possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.