Energy fluctuations caused by traps within organic semiconductor films present a significant challenge to intrinsic charge transport, severely impairing the efficiency, stability, and uniformity of organic electronic devices. Here, we propose a precise electric-field engineering strategy to actively modulate trap-induced localized energy barriers, thereby improving the charge transport in organic thin-film transistors (OTFTs). Our results demonstrate that charge transport in monolayer C10-DNTT polycrystals is highly sensitive to the applied electric field. By increasing the lateral electric field, we effectively reduce the trap-induced barrier height to the thermal voltage level (kBTq) and increase the carrier velocity by more than 2 orders of magnitude. We also demonstrate an OTFT array with mobility uniformity of 97.1%, as well as an enhancement-depletion mode amplifier featuring a voltage gain exceeding 3200 and power consumption below 0.5 nW. These performance metrics hold significant promise for applications in flexible amplifiers and ultralow-power analog circuits.

Metallic charge transport of field-induced carriers can be observed in single-crystal silicon over a wide temperature range. Such behaviour is rare in undoped organic semiconductors but is beneficial for engineering devices with advanced performance. Here we report metallic charge transport in conjugated molecular bilayers down to 8 K with an electrical conductivity of up to 245 S cm−1 and a Hall mobility larger than 100 cm2 V−1 s−1 at 20 K. We use molecular-crystal bilayers of the organic semiconductor 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene. We infer that this transport behaviour originates from the phenyl bridge coupling between the two molecular layers, which suppresses molecular vibrations and weakens Coulomb interactions. We develop a controlled method for introducing defects, using which we observe a disorder-driven metal–insulator transition in the molecular crystal. Molecular bilayer crystals of an organic semiconductor can exhibit metallic charge transport down to 8 K with an electrical conductivity of up to 245 S cm−1, as well as charge carrier mobility values of more than 100 cm2 V−1 s−1 at 20 K.

The sustainable development of artificial intelligence requires energy-efficient computing technology. Two-dimensional semiconductor digital electronics could potentially provide such capabilities, and promising single devices and small circuits have been developed. However, very large-scale integration remains challenging due to the inability to control atomic-scale defects and mesoscopic device variations, as well as the lack of macroscopic variation-aware design methodology. Here we report a molybdenum disulfide computer that combines a 0.5-mu m industrial fabrication process and a back-end-of-line-integrated academia laboratory process. The computer comprises 1,433 transistors interconnected by four metal layers within a compact footprint, offering an integration density of around 9,336 transistors per square millimetre. The computer can store data on-chip in the register file and perform arithmetic operations on multiple-bit data parallelly at a 1-kHz clock frequency. Key to the development of this system is a multi-level co-optimization methodology that spans transistor, standard cell, logic synthesis and interconnect design.

The development of high-durability and low-cost bifunctional single-atom catalysts is crucial for enhancing the oxygen reduction and oxygen evolution reaction (ORR/OER) performance of advanced energy storage devices and facilitating their commercialization. Based on density functional theory (DFT), a systematic investigation of B, P, S, and O doped Fe-based single-atom catalysts supported on graphene was performed to elucidate the microscopic mechanisms governing bifunctional catalytic activity, with emphasis on doping sites and non-metal dopant species. The results indicate three Fe-based single-atom catalysts of FeN7-P, FeN7-O, and FeN8-S with distinct doping configurations exhibit stable and relatively high bifunctional activity, with ΔE values (ηORR + ηOER) of 0.76 V, 0.83 V, and 0.77 V, respectively. The non-metal doping induced structural reorganization and bond modulation not only optimizes electronic transport pathways but also enhances the regulation of adsorption behaviors of reaction intermediates, thereby providing a theoretical foundation for the design of efficient non-precious metal ORR/OER catalysts.

Abstract Resistive switching is the basis of many emerging memory technologies. However, its operation at cryogenic temperatures remains scarce, and it generally lacks compatibility with optical control and in-situ electrical programmability. Here, we report the discovery of a photo-activated digital resistive switching effect in a cryogenic photomemory based on α-In 2 Se 3 . After an optical pulse, the device can be repeatably switched from a high- to a low-resistance state digitally, which persists long after the photoactivation. The switching threshold voltage can be continuously tuned over a wide range by the reset voltage pulse, additional optical pulses, and electrostatic gating, providing multimodal control over the memory logic. The device also exhibits a markedly enhanced photoresponse and resettable persistent photoconductivity, allowing the emulation of synaptic behaviors at cryogenic temperatures. Our work reveals a defect-mediated mechanism for embedding programmable digital logic into a nonvolatile photomemory, establishing a versatile platform for adaptive optoelectronics at cryogenic temperatures.

Abstract The advancement of flexible electronics necessitates displays that combine bendability, high resolution, and energy efficiency. Nevertheless, conventional pixel architectures impose critical limitations in power consumption and scaling, hindering the development of such displays. Here, we demonstrate a flexible active-matrix micro light-emitting diode display using a ferroelectric metal field-effect transistor with hafnium-based gate stack and an indium tin oxide channel, functioning as driver and memory element, fabricated below 400 °C on polyimide. The 400°C-activated ferroelectric capacitors in transistors exhibit a remnant polarization of 47 μC/cm2. The resulting devices achieve a record normalized memory window of 0.63 V/nm (7.5 V), an on/off ratio of 4 × 108, and robust flexibility, retaining performance after 105 bending cycles at a radius of 4 mm. The proposed pixel circuit supports dual-mode driving schemes, enabling precise grayscale control at a 200 kHz refresh rate. This pixel architecture achieves a high resolution of 428 pixels per inch and dynamic power consumption of 0.68 nW, highlighting its potential for next-generation wearable and portable displays.

III-V semiconductor compounds, e.g. boron nitride and gallium nitride, are strategic candidates for next-generation miniaturized illumination with high-stability and integrated advantages, but face challenge in broad white emission in the visible region due to inherent bandgap limitation. Herein, this work reveals a trinity emitting strategy based on hexagonal boron nitride quantum dots (BNQDs) exhibiting full-spectrum white emission. This is featured with trichromatic fluorescent states, including dual energy migration channels from blue (2.9 eV) to green peak (2.5 eV) with charge delocalization effect, and red peak (2.1 eV) by induced dipole moment interaction. The resulting BNQDs exhibit an ultra-high color rendering index (CRI) of 95 and a wide-range adjustable correlated color temperature (CCT). Moreover, selective deoxygenation at the nitrogen atomic site of BNQDs purposefully decreases carrier loss and phonon scattering for a record quantum yield of 68.3% alongside exceptional thermostability to 573 K, and long-term optical stability whose performance decreased by only 4.7% when preserved in the air for 2.5 years. Our BNQD gives birth to ultra-stable white light emitting diodes, enabling codable optical signals for multi-level authentication with a low deviation ratio at 1/2 & times;10-22. This work provides an atomic-level regulation strategy of multiple luminescence states in single-component white-light materials for advanced optoelectronic applications.

Two-dimensional(2D)transition-metal dichalcogenides(TMDCs)have quickly become key in the development of next-generation semiconductor technologies.

Human brain seamlessly integrates multisensory stimuli to synthesize complementary information for enhanced perceptions, depending on neural principles of superadditivity, inverse effectiveness, and temporal congruency. Replicating multisensory integration in artificial intelligences has remained challenging due to the inefficiency of algorithmic fusions and the absence of hardware-native mechanisms. Here, we demonstrate biomimetic audiovisual integration at the device level of Bi2O2Se ferroelectric-semiconductor field-effect transistors (FeS-FETs) through multiphysics coupling. Our FeS-FETs simultaneously accomplish the superadditive integration factor of 2800%, dynamical reweighting inputs of inverse effectiveness, and prolonged temporal congruency beyond 103 s. Furthermore, when configured into memristor-chip-based spiking neural networks, the resultant multisensory system is capable of executing the sensory synaptic plasticity, population-coded spiking, and Bayesian-optimal fusion, which promotes the excellent recognition accuracy of 98.2% for fuzzy objects, surpassing that identified from conventional fusion algorithms. By the exploration of multi-physical computing to mirror the biological multisensory hierarchy, we establish a physics-aware framework for neuromorphic multisensory intelligences, bridging physical dynamics with neurobiological principles for self-adaptive edge computing.

The epitaxial growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) is essential for advancing beyond-silicon electronics. While the c-plane of sapphire has been the standard substrate for epitaxy, exploiting the richness of crystallographic planes may help understand universal mechanisms governing van der Waals epitaxy. The vast spectrum of crystallographic planes, which offer diverse surface symmetries and atomic configurations, remains underexplored due to the complex potential energy landscape at each epitaxial interface. Here, we develop a theoretical framework to explore the vast sapphire crystallographic planes for deterministic MoS2 epitaxy. By evaluating interfacial strain and surface energy as key descriptors across 33 crystallographic planes, we identify five optimal candidates, namely, A(112̅0) C(0001), P(112̅3), R(11̅02), and S(11̅01) We establish that unidirectional alignment is governed by reducing the surface symmetry of the substrate, achieved either through the plane's intrinsic low symmetry (P, R, S) or via engineered step-edges on high-symmetry surfaces (C, A). This universal principle enables the successful growth of wafer-scale single-crystal MoS2 on all five predicted planes.

Phase engineering is of vital importance for determining the material functionalities and expanding the material library. However, the controllable and scalable phase transition of transition metal chalcogenides remains extremely challenging. The microscopic observation of the phase evolution pathway is an essential prerequisite for understanding the phase transition mechanism. Here we atomically observe a non-stoichiometric phase evolution process in large-scale superconducting PdTe2 films under heating through in situ scanning transmission electron microscopy. The unprecedented phase transition from PdTe2 to PdTe via atomic reconstruction is evidenced and theoretically verified by our machine learning molecular dynamics simulations. In particular, forming the intermediate state of PdTe2/PdTe heterostructure during the phase transition robustly generates giant-helicity-dependent terahertz emission due to inversion symmetry breaking. Our results not only provide insights into the atomic reconstruction in transition metal chalcogenides but also offer a general strategy for the fabrication of large-area transition metal monochalcogenide films and heterostructures, potentially applicable for various device applications. Controllable and scalable phase transition of transition metal chalcogenides is challenging. Using in situ microscopic analysis, a non-stoichiometric phase transition from PdTe2 to PdTe is observed on the atomic scale, providing mechanistic insights into the scalable phase engineering of transition metal chalcogenide films and heterostructures.

On-chip computational spectrometers hold significant promise for developing integrated optoelectronic systems by eliminating the need for bulky dispersive components. 2D van der Waals (vdW) heterostructures provide a compelling platform for such miniaturized devices; however, the fabrication complexity and unavoidable interfacial defects severely hamper their application. There is a growing need for simplified device architectures with universal modulation strategies. Here, we demonstrate a miniature computational spectrometer based on a single 2D semiconductor phototransistor via vdW contact. This approach effectively suppresses Fermi-level pinning, allowing dynamic modulation of Schottky barriers and distinct wavelength-dependent anti-ambipolar photoresponse. The device has a small footprint of similar to 73 mu m(2) and accurately reconstructs both monochromatic and broadband spectra across the visible range (380-680 nm), achieving an average reconstruction accuracy of similar to 0.75 nm and a spectral resolution below 10 nm. This universal architecture offers a promising pathway toward ultra-compact hyperspectral imaging, spectroscopic sensing, and on-chip optoelectronic integration.

Abstract Switchable phototransistors equipped with high-sensitivity, dynamic encryption, low-power consumption, and CMOS processing compatibility are key components for optoelectronic encryption chips. Two-dimensional van der Waals (vdWs) heterostructures provide a solution toward this goal, despite continued efforts, excessive dependence on gate voltage modulation, multi-wavelength excitation and polarization modulation causes unsolved issues of high-power operation, channel interference and limited integration level, respectively. Here, we demonstrate a dual-mode vdWs phototransistor based on PtTe2/WS2 heterostructure. Through bias-modulated band alignment and carrier dynamics, the operation mechanism can be switched between photoconductive and photovoltaic modes. In photoconductive mode, the prolonged carrier lifetime donates a large photogain, yielding a high responsivity of 1.37 A W−1. In photovoltaic mode, a wide unilateral depletion region effectively suppresses the dark current, contributing outstanding specific detectivity of 9.42 × 1014 Jones, weak light detection capability (~pW level), and high-speed response (rise time ~26.3 μs, fall time ~22.6 μs). More importantly, high on/off ratio of ~105 and four distinct current states have been achieved via dual-mode operation in the phototransistor, enabling the realization of multiple optical logic gates (XNOR, NOR and XOR) and multi-state quaternary image encryption with superior average correlation coefficient of adjacent pixels of 0.03. This reconfigurable device provides a versatile platform for constructing multi-functional photoelectronic chips and advancing secure optical communication technologies.

Kinetics determine the growth behavior of thin films, particularly for atomically thin transition-metal dichalcogenides. Metal-organic (MO) chemical vapor deposition (CVD) offers promise for scalable growth, but the reactions are kinetically limited, leading to nanometer-scale domain size and carbon contaminations. Here, we unveil the fundamental kinetic limitations and overcome them by introducing oxygen-assisted MOCVD (oxy-MOCVD) technology. By tuning reactions with oxygen, MO precursors are converted into high-purity transition-metal oxides and chalcogens, producing aligned molybdenum disulfide (MoS2) domains with a size and growth rate that are orders of magnitude larger than conventional MOCVD. The MoS2 is free of carbon impurities and exhibits average mobility exceeding 100 square centimeters per volt per second. The scalability of oxy-MOCVD is demonstrated by 150-millimeter single-crystal MoS2 wafers, proving the feasibility of industrial-scale production.

Biological vision systems tightly couple spectral sensing with temporal integration to extract task-relevant information with minimal data movement. In contrast, conventional optoelectronic vision hardware typically separates photodetection from electronic computation, incurring substantial latency and energy costs. Optical neural networks can alleviate this bottleneck, but many implementations are difficult to scale. Here, we propose a bio-inspired optoelectronic inference architecture based on a Fabry-Perot microcavity-integrated MoS2 photodetector array, in which sensing, weighting, and accumulation are unified within each pixel. Cavity-engineered wavelength selectivity encodes neural-network weights in the spectral domain, while the finite carrier lifetime of MoS2 enables analog temporal accumulation without external memory. The system achieves test accuracies of 99.6%, 94.8% and 94.0% on MNIST, CIFAR-10 and the Free Spoken Digit Dataset, respectively. Post-training optical Hessian pruning further reduces optical complexity while maintaining robustness. This architecture provides a compact route toward wavelength-aware in-sensor neuromorphic inference.

van der Waals (vdW) heterostructures are a groundbreaking platform for modern spintronics, offering atomically precise interfaces that enable unprecedented control over material properties. This perspective explores exchange bias (EB), a cornerstone of spintronic functionality arising from interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AFM) layers, in such systems. Unlike conventional thin-film heterostructures, vdW materials, which exhibit weak interlayer coupling, tunable vdW gaps, and layer-dependent magnetism, challenge classical models of EB and open new research directions. We review EB phenomena in vdW heterostructures, highlighting key observations that deviate from conventional thin-film models and outlining the underlying structural and magnetic intricacies of these systems. We highlight how these phenomena lead to an unconventional EB thickness dependence and self-induced EB without a separate AFM layer. We also explore the role of interface imperfections that can arise from the reactive nature of vdW materials and their impact on EB. Finally, we discuss mechanisms to control EB and outline the potential of leveraging robust EB in these materials for future memory devices.