Mid-infrared polarization detection can significantly enhance target detection capabilities in complex background environments. However, conventional polarization detection methods typically require bulky and complex optical systems. In this work, aluminum gratings at four orientations are directly integrated onto the surface of InSb detectors to achieve linear polarization detection. The InSb photodetector with a spectral reponse ranging from 3 mu m to 5.35 mu m and a detectivity of 5.08 x 1011 cm & sdot;Hz1/2/W at 77 K has been demonstrated. Furthermore, all the integrated gratings at four orientations provide a polarization extinction ratio greater than 41:1, while also reducing reflection losses of the incident light. As a result, the responsivity to linearly polarized light improves from 1.9 A/W for the bare detector to 2.15 A/W with the addition of the SiO2 layer, and further increases to 2.24 A/W with the integration of the grating. This approach offers a promising solution for compact mid-infrared polarization detection.

All-perovskite tandem solar cells are promising for achieving both high efficiency and thermal stability. Taking Cs(Sn, Pb)I3 as a representative example, this issue severely limits the open-circuit voltage and operational stability of the corresponding devices. Here, we reveal that lattice distortion in Cs(Sn, Pb)I3 fundamentally drives Sn2+ oxidation and phase separation, generating defects such as edge-sharing octahedral domains and anti-phase boundaries. Using ultralow-dose scanning transmission electron microscopy, we visualize these defects and correlate them with enhanced oxidation pathways. Incorporating dimethylammonium cations stabilizes the tetragonal perovskite phase, reducing perovskite structural distortion and suppressing Sn2+ oxidation. This structural engineering yields a narrow-band-gap (NBG) subcell with champion power conversion efficiency (PCE). Integrated with a 1.92 eV CsPbI2Br top cell, the resulting two-terminal tandem solar cells achieve a PCE of 19.3% (steady-state efficiency). These findings uncover the structural origin of Sn2+ instability, guiding the design of highly durable all-perovskite tandems.

All-perovskite tandem solar cells (all-PSK TSCs) offer a promising route to surpass single-junction efficiency limits, yet the performance of wide-bandgap (WBG) subcells remains constrained by inadequate interfacial engineering. In particular, the molecular orientation and packing of self-assembled monolayers (SAMs) can significantly influence perovskite film formation and device performance. Here, we rationally design a series of carbazole-based SAMs and identify a bicarbazole-core molecule, 9,9-DCz, that adopts a predominantly upright orientation on indium tin oxide (ITO), in contrast to the conventional flat-lying alignment. This vertical configuration facilitates denser surface coverage, favorable energy-level alignment, and reduced non-radiative recombination in the WBG perovskite layer. As a result, we achieve a certified power conversion efficiency (PCE) of 19.95% (champion 20.81%) for the WBG subcell (1.77 eV, 0.0396 cm2), and 28.59% for the all-PSK tandem device. Our findings indicate that upright SAMs orientation as an effective design principle for high-performance WBG and tandem perovskite photovoltaics.

The development of high-efficiency, stable, and scalable perovskite solar cells/perovskite solar modules (PSCs/PSMs) highly depends on the performance and cost-effectiveness of functional layers such as electron transport layers (ETLs) and hole transport layers (HTLs). Among various deposition techniques, chemical bath deposition (CBD) has emerged as a promising low-cost, solution-based method for fabricating both ETLs and HTLs, offering advantages such as uniform film coverage and tunable material properties. In this review, we systematically summarize recent progress in employing CBD-based ETLs/HTLs in PSCs/PSMs, with an emphasis on film growth mechanisms, deposition procedures, scalable fabrication, interface engineering strategies, and device performance. Particular attention is devoted to widely used materials, including SnO 2 , TiO 2 , and CdS for ETLs, as well as NiO x for HTLs. The effects of key parameters in the CBD technique, such as precursor concentration, temperature, and deposition duration, on film morphology and overall device performance are critically evaluated. Furthermore, this review explores the integration of CBD-based ETLs/HTLs into scalable PSMs and assesses their impact on both efficiency and long-term stability. Finally, current challenges and prospects for leveraging the CBD technique in the commercial development of PSCs/PSMs are discussed.

CsPbI3-based perovskites are promising absorbers for tandem solar cells owing to their optimal bandgap (∼1.7 eV). However, the phase transition from photoactive γ-CsPbI3 to non-photoactive δ-CsPbI3 remains a major obstacle and is strongly governed by microstructural defects formed during film growth. Among these, Ruddlesden-Popper antiphase boundaries (RP-APBs) are particularly prevalent and exhibit competing effects, relieving lattice strain while simultaneously facilitating moisture penetration, ion migration, and nonradiative recombination. Here, we systematically regulate RP-APB defects in γ-phase CsPbI3 thin films and elucidate their decisive influence on both phase stability and optoelectronic performance. A compositional strategy based on PbI2 excess effectively reduces RP-APB density but induces edge-sharing [PbI6]4- motifs that nucleate the δ phase. In contrast, a dimethylammonium (DMA+)-assisted phase-engineering strategy forms β-(DMA,Cs)PbI3, which intrinsically suppresses RP-APB formation while preserving the photoactive perovskite framework. As a result, RP-APB-free β-phase films exhibit prolonged carrier lifetimes, strongly suppressed nonradiative recombination, and the lowest apparent trap densities, enabling a champion power conversion efficiency of 20.23% together with markedly enhanced operational, thermal, and ambient-air stability. This work demonstrates that regulating crystalline defects, exemplified by RP-APBs, plays a critical role in achieving both stable and efficient perovskite solar cells.

Nonpolar a-plane GaN with improved crystal quality and surface morphology was achieved via secondary epitaxy lateral overgrowth on GaN templates patterned with SiO2 stripes oriented along the [1-100] (m-axis) direction. Secondary epitaxy was conducted on stripe templates with two different width-to-spacing ratios. Results indicated that the V/III ratio significantly affected the morphology of the nucleation layer. On-axis X-ray diffraction results revealed that a-plane GaN films whose nucleation-layer morphology reflects the underlying crystal microstructure exhibited higher crystal quality, with the best XRC-FWHM values were 316 arcsec along the c-axis and 377 arcsec along the m-axis, respectively. Basal plane stacking fault densities were quantified through a modified Williamson-Hall analysis, decreasing to a minimum of 6.62 x 10(3) cm(-1). This defects reduction is attributed to grain boundary formation during coalescence, which suppresses defects propagation and yields low-defect Ga-face wing regions. Furthermore, Raman spectroscopy results demonstrated that wider stripes effectively relax the strain in a-plane GaN films. This work establishes a viable pathway towards achieving smooth, low-defect nonpolar GaN, providing insights for the development of QCSE-free devices.

Abstract In recent years, micro-LEDs have garnered widespread attention as core devices for next-generation display technology. As device dimensions are scaled down to the micrometer range, however, sidewall damage introduced by dry etching has become a critical bottleneck limiting their optoelectronic performance. In this study, InGaN-based micro-LEDs ranging in size from 1 μm to 5 μm were fabricated, and the effects of TMAH sidewall treatment on their optoelectronic characteristics were systematically investigated. The study found that TMAH treatment significantly enhanced the peak wall-plug efficiency (WPE), with an increment exceeding 100% for 1 μm and 2 μm micro-LEDs. Meanwhile, the reverse-biased leakage current of all devices is decreased by approximately one order of magnitude. Electroluminescence (EL) spectra further revealed a pronounced superlattice (SL) emission peak after TMAH chemical treatment, verifying the improved longitudinal current spreading. These findings validate the effectiveness of TMAH sidewall treatment in high-performance micro-LED fabrication.

Ultra-compact spectrometers have attracted significant attention for their potential applications in portable systems for biomedical analysis, environmental monitoring, spectral analysis, and astronomical observation. In this work, we propose a miniaturized InGaAs-based extended short-wave infrared (eSWIR) spectrometer based on a single n-graded-p junction with voltage-tunable optical response characteristics in the range from 1600 to 2100 nm. We combine this unique optical characteristic with a regression algorithm to realize the reconstruction of an unknown spectrum. The spectrometer achieves a high responsivity of 0.73 A/W at 1650 nm, and a low dark current density of 3.91 x 10-5 A/cm2 at 200 K, corresponding to a calculated detectivity of 1.69 x 1011 cm Hz1/2/W. Such spectrometers compatible with standard III-V processes can offer a pathway to greatly promote the development of miniaturized spectrometers. (c) 2026 Chinese Laser Press

The practical implementation of two-dimensional (2D) transistors is fundamentally limited by the lack of gate dielectrics that can simultaneously deliver a high dielectric constant, a wide bandgap, strong breakdown strength, and long-term environmental stability-an often-overlooked yet critical requirement for reliable device integration. Here, we report 2D single-crystalline TbOCl nanosheets as gate dielectrics that uniquely reconcile these competing demands. TbOCl exhibits a high dielectric constant (12.5), an ultrawide bandgap (∼6.6 eV), and a high breakdown field (11.9 MV cm-1). MoS2 field-effect transistors (FETs) gated by TbOCl exhibit excellent electrostatic control, yielding a near-ideal subthreshold swing of 72 mV dec-1, a small hysteresis of only 8 mV, and an ultra-low gate leakage current of ∼10-13 A. Notably, TbOCl-based devices maintain ultrastable electrical performance after more than 9 months of ambient storage with negligible performance degradation. The superior stability originates from an intrinsic dual-antioxidation mechanism that effectively suppresses oxidative degradation of the dielectric. Furthermore, logic inverters fabricated with TbOCl gate dielectrics exhibit fast switching behavior, with rise and fall times of 80 and 16 µs, respectively. Together, these results establish TbOCl as a stable, high-performance 2D dielectric platform, offering a viable pathway toward reliable 2D electronic devices.

Atomic-layer-deposited (ALD) tin oxide (SnO2) electron-transport layers (ETLs) generally underperform in n-i-p structured perovskite solar cells (PSCs) compared to solution-processed counterparts. The inherent organic residues in ALD-SnO2 disrupt crystallinity and obstruct charge transfer, while they accelerate perovskite interfacial degradation. To address this, an invasive solution bath post-treatment is introduced by using sodium 2,3-dimercapto-1-propanesulfonate (DMPS) as the additive in the solution bath. DMPS, bearing thiol and sulfonate groups, simultaneously chelates the surface and the inner layer of the SnO2 layer, successfully removing organic residues from the bulk and surface while suppressing water-induced morphological damage. Consequently, this synergistic modification yields champion efficiencies of 25.26% for small-size cells and 22.42% for 12.5 cm2 mini-modules, alongside significantly enhanced operational stability. Our work offers a scalable route for integrating high-performance ALD-SnO2 in large-area n-i-p solar modules.

Integrating solar-driven photovoltaics (PVs) with photo-electrocatalytic (PEC) antibacterial systems presents a sustainable and efficient technology that operates entirely on renewable energy. Herein, we report a high-performance, self-powered PV-PEC system enabled by wide-bandgap (WBG) perovskite solar cells/modules (PSCs/PSMs). Specifically, 3-Fluoro-L-Phenylalanine (3-FLPA) is introduced as a molecular bridge in the n-i-p based perovskite devices. The carboxyl groups (-COOH) in 3-FLPA anchor to oxygen vacancies on the SnO2 surface, while the protruding amine (& horbar;NH2) and fluorine (& horbar;F) substituents extend into the perovskite lattice, effectively passivating defects and suppressing the photo-induced phase segregation in WBG PSCs. As a result, WBG PSCs and PSMs achieve impressive power conversion efficiencies of 20.43 % and 15.03 % under AM 1.5G irradiation, respectively, which increase to 41.57 % and 29.46 % under indoor lighting (1000 lux). Driven by the PSM, the WSe2@WO3 heterojunction photoanode exhibits enhanced charge separation and reactive oxygen species generation, leading to efficient bacterial membrane disruption and enzyme inactivation. The integrated PSM-PEC system achieves complete inactivation of E. coli within 16 min under sunlight and 65 min under indoor lighting. These findings highlight the potential of WBG PSCs/PSMs for all-weather self-powered sterilization technologies.

Rare‐earth metal halides have emerged as a compelling class of luminescent materials, offering an environmentally benign alternative to toxic lead‐based halides. This work reports the successful synthesis of Cs 3 CeX 6 (X = Cl, Br, I) with tunable emission and excellent photoluminescence quantum yield (PLQY) of Cs 3 CeCl 6 . Through controlled halogen substitution in the Cs 3 CeX 6 (X = Cl, Br, I) system, composition‐dependent emission redshift (Cl→Br→I) is observed. Among them, Cs 3 CeCl 6 achieves a photoluminescence quantum yield (PLQY) of 99.89%, significantly surpassing the 92.57% PLQY of Cs 3 CeBr 6 and the 7.53% PLQY of Cs 3 CeI 6 , meanwhile surpassing that of most previously reported lead‐free metal halides, highlighting its exceptional potential for efficient luminescent applications. Thermal stability analysis reveals that Cs 3 CeCl 6 maintains remarkable emission efficiency at elevated temperatures, retaining > 85% of its room‐temperature luminescence intensity at 438 K, compared to only 60% for Cs 3 CeBr 6 and a mere 10% for Cs 3 CeI 6 . The exceptional thermal robustness originates from their characteristically high activation energies for thermal quenching, which effectively suppress non‐radiative relaxation pathways. White light‐emitting diodes (LEDs) based on Cs 3 CeI 6 exhibit a remarkable color rendering index (R a ) of 95.1, in contrast to those based on Cs 3 CeCl 6 (R a = 77.6) and Cs 3 CeBr 6 (R a = 79.6); all WLEDs based on Cs 3 CeX 6 (X = Cl, Br, I) demonstrate excellent atmospheric stability. With near‐unity PLQY and remarkable thermal stability of Cs 3 CeCl 6 , coupled with the outstanding white LEDs performance of Cs 3 CeI 6 , Cs 3 CeX 6 (X = Cl, Br, I) compounds emerge as promising candidates for next‐generation environmentally friendly optoelectronic applications, particularly in advanced display technologies and solid‐state lighting systems. This work contributes to the advancement of eco‐friendly emitters with both high efficiency and practical utility in next‐generation optical technologies.

The passivation of crystalline silicon surface is extremely crucial and irreplaceable in the preparation of crystalline silicon heterojunction (SHJ) solar cells, and it is highly sensitive to the surface structural configuration and characteristics of the silicon substrate. In this work, we innovatively proposed a hydrophobic modification scheme for the silicon substrate surface by diluted HF solution incorporated into the slow lifting process, in order to optimize the interface characteristics and enhance the photovoltaic performance of the solar cells. This study conducts an in-depth exploration of the surface reaction mechanism of silicon wafers during HF slow lifting process and its impact on solar cell performance. Compared to the conventional slow lifting of deionized water conjugated with the drying of hot air, X-ray photoelectron spectroscopy (XPS) results reveal that a stable hydrogen-terminated surface with minimal oxidation is formed by the strategic surface modification during HF slow lifting process, characterized by the dominant Si 0 peaks and reduced Si-O-Si signals. The reduced contact resistivity ( ρ c ) and series resistance ( R s ) of the solar cells are also shown to be reduced, and the fill factor (FF) and power conversion efficiency (PCE) of SHJ cells are enhanced by 2.2% and 1.9%, respectively. This study presents an economical and practical method to modify the surface bonding configuration of crystalline silicon. It is elucidated how precisely engineered c-Si surface chemistry effectively suppresses substrate oxidation and markedly elevates cell performance, while simultaneously streamlining cleaning and texturing protocols to accelerate manufacturing rhythm.

Materials integrating electromagnetic interference (EMI) shielding and infrared (IR) stealth possess great application potential but face obstacles in large-scale production. Herein, MXene/sodium carboxymethyl cellulose (CMC-Na) composite ink is synthesized via facile, scalable vacuum ball milling. CMC-Na chains adhere to MXene through intermolecular hydrogen bonds; electrostatic repulsion restrains nanosheet stacking, while the coating hinders MXene oxidation. The ink exhibits outstanding machinability and can form uniform films on various substrates via screen printing or coating. At a MXene/CMC-Na mass ratio of 4:1, the film achieves balanced performance: a tensile strength of 82.84 MPa, an elongation at break of 2.67%, a toughness of 1.58 MJ·m-3, an EMI shielding effectiveness of 33 dB, and a specific shielding effectiveness of 37,260 dB·cm2·g-1. Low IR emissivities of 19.56% (3-5 μm) and 13.65% (8-14 μm) reduce the surface radiant temperature to 69 °C under 150 °C heating. Its layered structure combines surface and internal multiple reflections to reconcile EMI shielding and IR stealth. This low-cost scalable strategy supports the development of integrated shielding-stealth wearable electronic devices.

ABSTRACT Mixed‐halide (I/Br) wide‐bandgap perovskites have emerged as promising top‐cell candidates for tandem photovoltaics due to their tunable bandgap and excellent optoelectronic properties. However, halide phase segregation poses a critical challenge to their commercialization, as initially homogeneous perovskite films spontaneously demix into iodide‐rich and bromide‐rich domains under illumination or electrical bias. This phenomenon leads to severe open‐circuit voltage ( V OC ) losses, efficiency degradation, and compromised device stability. This comprehensive review systematically examines the fundamental origins of halide phase segregation from thermodynamic, kinetic, and defect chemistry perspectives, with particular emphasis on the oxidation‐driven irreversible degradation pathways. We survey advanced characterization techniques including transmission electron microscopy (TEM), Kelvin probe force microscopy (KPFM), conductive atomic force microscopy (c‐AFM), photoluminescence (PL), and cathodoluminescence (CL) that have provided unprecedented insights into the spatiotemporal dynamics of phase segregation. Furthermore, we critically evaluate multidimensional mitigation strategies encompassing compositional engineering, grain boundary passivation, and interface optimization. This review aims to provide a holistic understanding of halide phase segregation and guide the development of next‐generation stable perovskite photovoltaics.

ABSTRACT Oriented crystallization is critical for high performance and stability in inverted (p–i–n) perovskite solar cells, yet practical routes to precisely regulate this process remain limited. We introduce a co‐assembled monolayer (Co‐SAM) of MeO‐2PACz and pyrophosphoric acid (PA) that densifies packing on ITO and converts the buried contact into an active nucleation scaffold. Strong PA‐PbI 2 coordination enables the formation of interfacial seeds for α‐phase nuclei, directing interface‐initiated nucleation and bottom‐up phase conversion. The resulting films exhibit continuous, void‐free coverage, large high‐crystallinity grains, fewer residual intermediates and grain boundaries. Furthermore, the Co‐SAM optimizes energy‐level alignment and chemical passivation at the hole‐extract interface. This versatile strategy is successfully demonstrated across diverse inverted perovskite formulations, delivering high power conversion efficiencies (PCEs) with a champion value of 26.37%, and 25.07% for a 1 cm 2 device. Additionally, the Co‐SAM‐based devices demonstrate exceptional operational durability, retaining over 95% of their initial efficiency after 1500 h of continuous maximum power point tracking.

The exponential growth of the lithium-ion battery industry has generated substantial quantities of manufacturing scrap, creating an urgent need for sustainable resource recovery. Traditional graphite anode recycling relies heavily on volatile organic solvents and corrosive inorganic acids, posing severe environmental and occupational risks. This study introduces a near-zero-waste, closed-loop upcycling framework for battery manufacturing scraps utilizing solely pure deionized water, static air, and recoverable aqueous ammonia. By exploiting intrinsic thermodynamic wettability contrasts, complete binder-free aqueous delamination of the active graphite coating from the copper foil is achieved with ultrasonic assistance. Subsequent low-temperature (440 degrees C) air pyrolysis simultaneously decomposes the polyvinylidene fluoride binder and oxidizes trace copper impurities. Final purification via room-temperature ammonia leaching selectively extracts copper as [Cu(NH3)4]2+, reducing residual copper concentrations to an ultralow value of 4.65 ppm without generating acidic effluents. Crucially, the synergistic application of thermal air oxidation and mild alkaline etching induces controlled microstructural remodeling. This dual-etching mechanism generates a hierarchical pore structure that nearly doubles the specific surface area (from 4.4 to 8.3 m2 g-1) while introducing topological edge defects. This rationally engineered porosity facilitates a kinetic shift from bulk diffusion to pseudocapacitive charge storage, significantly accelerating solid-state lithium-ion transport. Consequently, the regenerated graphite delivers an initial discharge capacity of 372.71 mAh g-1, an initial coulombic efficiency of 93.6%, and robust long-term cycling stability in full-cell configurations, maintaining 80.35% capacity over 800 cycles at a rigorous 2C rate. This inherently benign methodology transforms hazardous manufacturing waste into high-performance, fast-charging energy storage materials.

Tin sulfide exhibits promise as a high-capacity anode for sodium-ion batteries but suffers from substantial volume expansion and sluggish kinetics. We constructed a hydrangea-like Bi/SnS heterojunction to address these challenges. Theoretical calculations reveal that the work function difference between metallic Bi and semiconducting SnS drives electron transfer from Bi to SnS, generating a built-in electric field (BIEF) at the interface. This field significantly enhances charge transfer kinetics while reducing the Na+ diffusion barrier to 0.12 eV and buffering volume variations. Consequently, the Bi/SnS anode demonstrates exceptional performance with an initial Coulombic efficiency of 92%, delivering 901 mAh g-1 at 0.1 A g-1 and maintaining 400 mAh g-1 at 20 A g-1. It exhibits remarkable cycling stability with 79.21% capacity retention after 3000 cycles at 10 A g-1, providing fundamental insights for heterointerface engineering in energy storage applications.

Short-wave infrared (SWIR) detectors hold significant application potential in fields, such as optical communications, low-light night vision, and LiDAR. In recent years, SWIR detectors have been advancing toward higher integration, enhanced sensitivity, miniaturization, and lower power consumption. Utilizing the precise control of optical wavefront phase and amplitude by metasurfaces enables efficient light focusing. This work proposes a scheme for the direct on-chip integration of a solid-immersion metalens with an InGaAs/InP PIN infrared detector. The integrated metalens-enhanced detector achieves a 2.4-fold improvement in responsivity compared to the detectors without metalens within the communication band and yields a specific detectivity of 2.37 × 1011 cm Hz1/2/W. This approach significantly enhances detector responsivity without introducing additional dark current or capacitance, thereby paving the way for the development of highly sensitive and miniaturized infrared detectors.