2D-3D van der Waals heterojunctions combine the excellent properties of 2D materials with the well-established manufacturing techniques associated with bulk materials and have attracted significant interest in both fundamental research and device applications. Band alignment type and interface coupling strength in these heterojunctions are critical to the efficiency of carrier separation and transport. In this study, large-scale monolayer MoS2 films with high quality were prepared on sapphire substrate by chemical vapor deposition and were transferred onto ZnO polar surfaces to form 2D-3D van der Waals heterojunctions. The effects of ZnO surface polarity on the band alignment and interface coupling of the MoS2/ZnO heterojunction are investigated experimentally and theoretically, using (0001) for Zn-polar and (0001) for O-polar. The type of band alignment of the heterojunction is determined by X-ray photoelectron spectroscopy and ultraviolet-visible spectroscopy, which show that the MoS2/ZnO(0001) heterojunction has a Type-II band alignment, with the conduction band offset (CBO) and valence band offset (VBO) of 0.57 eV and 1.80 eV respectively, while the MoS2/ZnO(0001) heterojunction has a Type-I band alignment, with a CBO of 0.01 eV and a VBO of 1.28 eV. In addition, the interlayer coupling and interfacial charge transfer of the heterojunctions are theoretically investigated, revealing that the MoS2/ZnO(0001) has a stronger built-in electric field and a more significant charge transfer compared with MoS2/ZnO(0001). This study contributes to a deep understanding of how different ZnO polar surfaces affect the band alignment and interface coupling of MoS2/ZnO heterojunctions, which is critical for advancing optoelectronic applications.

Lithium metal anode faces formidable challenges from uncontrollable dendrite growth and unstable solid-electrolyte interphase (SEI). Interface engineering of the current collectors (CCs) or lithium anodes presents a viable solution. We propose engineering the intrinsic microstructure of coatings to precisely construct interlayers that are both lithiophilic and possess rapid kinetics. A strategy using ion beam deposition (IBD) technology to craft ZnMgSn films with composite microstructures on commercial Cu CCs and lithium foils is reported. This artificial interphase not only exhibits a strongly lithium adsorption energy, but also significantly reduces the diffusion barrier for lithium atoms, thereby synergistically enabling uniform lithium plating. Crucially, this interphase promotes the in-situ formation of a mechanically robust, bilayer SEI rich in LiF, which can effectively accommodate volume changes during cycling. As a result, the ZnMgSn@Cu CC symmetric cell achieves an ultralong lifespan of over 11000 h. The full cell shows a capacity retention of 85.13% after 130 cycles at 5C. The modified lithium anode maintains over 80% capacity after 620 cycles at 1C. This work not only provides an efficient modification strategy but also offers profound insights into the microscopic design principles for an ideal lithium metal interphase, paving the way for practical lithium metal batteries.

Machine learning approaches can improve nuclear mass modelling, but the most accurate strategies often depend on a theoretical mass baseline or hand-crafted physics features. We test whether a modular architecture encoding selected nuclear-structure priors improves baseline-free direct prediction and yields informative branch diagnostics. The Cooperative Neural Network (CoNN) implements this approach through four form-constrained branches: a smooth macroscopic network, discrete embeddings, a two-dimensional regional grid, and a parity-aware network. It extracts complementary patterns from (Z, N) through these branches and sums their outputs to predict binding energies without a theoretical mass-model baseline. Thus, the model retains physics priors while reducing its reliance on engineered input features. On AME2020, CoNN reaches a root-mean-square deviation (RMSD) of 0.269 MeV for 3558 nuclei, compared with 0.836 MeV for a parameter-matched unstructured MLP. It also gives RMSDs of 0.419 MeV on a held-out interpolation subset and 0.728 MeV on 122 nuclei newly measured since AME2016. The learned branch outputs show recognizable physical patterns, including embedding shell-kink signatures at major magic numbers and odd-even staggering along isotopic chains. These results identify architecture-level priors as a practical route to baseline-free mass prediction, with learned components that help diagnose both nuclear-structure patterns and extrapolation limits.

Glioblastoma (GBM) persists as a highly fatal malignancy, with current clinical treatments showing minimal progress over years. Interstitial photodynamic therapy (iPDT) holds promise due to its minimally invasive nature and low toxicity but is impeded by poor photosensitizer penetration and inadequate GBM targeting. Here, we developed a biomimetic pure-drug nanomedicine (MM@CT), which co-assembles the photosensitizer chlorin e6 (Ce6) and the first-line chemotherapeutic drug (temozolomide, TMZ) for GBM, then camouflaged with macrophage membranes. This design eliminates the need for traditional excipients, ensuring formulation safety and achieving exceptionally high drug loading with 73.2 %. By leveraging the biomimetic properties of macrophage membranes, MM@CT evades clearance by the mononuclear phagocyte system and can overcome blood circulatory barriers to target intracranial GBM tumors due to its inherent tumor-homing ability. Consequently, this targeted strategy enables precise delivery of TMZ to the tumor site while significantly enhancing Ce6 accumulation within the tumor tissue. Upon intra-tumoral irradiation using an optical fiber, activated Ce6 synergizes with TMZ to exert both cytotoxic effects from chemotherapy and unique advantages from iPDT simultaneously attacking GBM tumors in a dual manner. In subcutaneous and intracranial GBM mouse models, MM@CT exhibits remarkable anti-tumor efficacy with minimal systemic toxicity, emerging as a promising GBM treatment strategy. STATEMENT OF SIGNIFICANCE: Glioblastoma (GBM) remains a formidable brain cancer, posing significant therapeutic challenges due to the presence of the blood-brain barrier (BBB) and tumor heterogeneity. To overcome these obstacles, we have developed MM@CT, a biomimetic nanomedicine with exceptional drug loading efficiency of 73.2 %. MM@CT incorporates the photosensitizer Ce6 and chemotherapy agent TMZ, encapsulated within nanoparticles and camouflaged with macrophage membranes. This innovative design enables efficient BBB penetration, precise tumor targeting, and synergistic application of chemotherapy and photodynamic therapy. Encouragingly, preclinical evaluations have demonstrated substantial antitumor activity with minimal systemic toxicity, positioning MM@CT as a promising therapeutic strategy for GBM.

The present study reports large room-temperature ferromagnetism in Co and Tb co-doped GaN films and further investigates the correlation between the doping concentration and the magnetic moment. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) measurements confirm that most of the dopants are incorporated into the GaN lattice. Photoluminescence (PL) and Raman spectra results reveal that post-annealing repaired most of lattice defects induced by ion implantation. The ZFC/FC curves show a blocked phase related to Co precipitates in Co single-doped GaN system and this phase is suppressed by the incorporation of Tb ions in the co-doped GaN systems. Although the magnetic properties were enhanced with the co-implantation of Co and Tb ions, the magnetic moment introduced by each ion slightly decreased with increasing Tb concentration. Density functional theory (DFT) calculations suggest that a high doping concentration of Tb atoms leads to the antiferromagnetic phase in the nearest position between Co and Tb ions. Appropriate co-doping with Co and Tb ions in GaN favors the development of enhanced ferromagnetism with no secondary phase. Our study not only offers valuable insights for understanding the magnetic characteristics of co-doped GaN, but also highlights the viability of developing room-temperature diluted magnetic semiconductors by appropriately co-doping TM and RE elements. (c) 2025 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

Achieving precise control of magnetic and spin-related properties in III-V semiconductors has long been the ultimate goal of spintronics research. Considerable progress has been made in bridging semiconductors and ferromagnetism with a high Curie temperature (Tc) in GaN. The polar nature of GaN is important for optoelectronic performance, but its effects on magnetic properties remain unexplored. In this study, the effects of surface polarity on the magnetic properties of Gd-implanted polar GaN were investigated experimentally and theoretically. It was observed that the N-polar GaN exhibits higher saturation magnetization and greater magnetic anisotropy than Ga-polar GaN. With the magnetic field parallel and perpendicular to the surface, the saturation magnetizations at room temperature for Gd doped Ga-polar GaN are 11.5 emu/cm3 and 85 emu/cm3, respectively, while these values are 30 emu/cm3 and 101 emu/cm3 for N-polar GaN. The Zero-field-cooled (ZFC) and field-cooled (FC) magnetization curves confirm a Curie temperature exceeding 350 K and rule out the presence of secondary phases. First-principles calculations reveal that N-polar GaN facilitates the delocalization of Gd-5d orbitals to form p-d exchange coupling, which explains the larger magnetic moment in Gd-implanted Npolar GaN. While both N-polar and Ga-polar GaN favor long-range ferromagnetic ordering along the c-axis over the a-axis, the magnetic interaction between Gd-Gd pairs is notably stronger in N-polar GaN, leading to its enhanced perpendicular magnetic anisotropy. These findings shed light on the origin of the magnetic moment and pave the way for the application of polar GaN in spintronic devices.

The nickel foam （the average pore diameter is about 2.7 mm，and the porosity is 93.1%） is used for the epoxy resin to coat the pore-struts， and the porous nickel foam/epoxy resin composite is obtained with such pore-struts as a multi-layer structure. The compression performance experiments are conducted on the obtained composite samples， and the mechanical strength is emphatically analyzed. The results show that the compressive strength and the specific strength of the composite samples are both significantly higher than those of the original nickel foam， respectively. When the nickel foam （with a bulk density of about 0.6 g·cm-3） is coated to make nickel foam/resin composite samples （with a bulk density of about 0.72-0.82 g·cm-3）， the compressive strength increases from 0.75 MPa to 2.24-2.68 MPa， and the specific strength increases from 1.23 MPa·cm3·g-1 to 3.09-3.27 MPa·cm3·g-1. The relationship between compressive strength and porosity of composite samples conforms to the corresponding mathematical relationship based on the octahedral model theory. According to the relevant mechanical model， the overall failure of the composite samples is caused by the priority failure of the pore-strut core.

In this work, the effects of N vacancy on the magnetic properties and electrical transport characteristics in Tb-implanted GaN films have been investigated by experimental and theoretical methods. X-ray photoelectron spectroscopy (XPS) and Raman spectra reveal that the concentration of N vacancy in GaN films increased when the samples were annealed in vacuum at 800 degrees C. The vacuum-annealed samples exhibit three times the saturation magnetization of N-2-annealed samples and show metallic behavior with a high carrier concentration of similar to 10(20) cm(-3). First-principles calculations indicate that N vacancies are more likely to form than Ga vacancies under N-poor condition. High concentration of N vacancy induces the transition from semiconductor state to metallic state in the system. In addition, N vacancy favors the ferromagnetic ordering in Tb-doped GaN systems, which can be tuned by a carrier-mediated mechanism. The achievement of robust room-temperature ferromagnetism coupled with high conductivity in GaN makes it highly suitable for potential applications in spintronic devices.

Realizing ultrahigh area capacitance based on suitable electrodes is a challenge for supercapacitors. In this work, an electrode is designed consisting of Co9S8 nanotubes and NiWO4 nanoparticles (named Co9S8@NiWO4) and fabricated by a hydrothermal process. The Co9S8@NiWO4 electrode realizes a record area capacitance of 18.8 F cm-2 at a current density of 5 mA cm-2 among the reports in the literature. The corresponding asymmetric supercapacitor shows high energy density of 0.48 mW h cm-2 at 2.42 mW cm-2 and superior cyclic stability of 79.2% retention over 7000 cycles at 10 mA cm-2. The great promotion in performance of Co9S8@NiWO4 electrode is synergistically attributed to high intrinsic theoretical capacitances of compounds, abundance polyvalent states, improved conductivity, and increases in reaction sites and rate of the electrode. This work provides a new route for designing highly efficient electrode for developing supercapacitors with high performance in practical applications.

GaN-based diluted magnetic semiconductors are highly attractive candidates for spintronic applications. In this study, the effects of defect concentration on defect-induced magnetism in Xe irradiated GaN films are experimentally and theoretically investigated. Robust room-temperature ferromagnetism was achieved for GaN films irradiated with two concentrations: 1.0 x 1020 and 5 x 1020 cm- 3. Rutherford backscattering spectrometry/ Channeling (RBS/C) results confirm that GaN films subjected to high-dose irradiation exhibit an increased concentration of defects. Although the defects increase proportionally with the irradiation fluence, the magnetic moment introduced by per Xe ions drops at 5 x 1020 cm-3. First-principles calculations reveal that a high concentration of Ga vacancies (VGa) leads to the decrease in the magnetic moment. Meanwhile, defect formation energy predicted that various VGa-related defect complexes (e.g. VGaVN, VGa-VN-Ni, VN-VGa-VN, VGa-VN-VGa, VGaVN-Gai and Ga di-Frenkel pairs) are likely to form and contribute to the observed reduction in magnetism. This study not only offers valuable insights into understanding the origin of defect magnetism in GaN, but also provides important guidance for the development of room temperature ferromagnetism in other semiconductors through defect engineering.

The adsorption of Lead (Pb) on brookite titanium dioxide thin films is determined using spin-polarized density functional theory. Band structures as well as density of states are shown. Magnetic irregularities are observed in thin layers that Pb atoms adsorb. The thin film has been identified to have a pivotal thickness of 1.6 nm. Beyond the essential thickness, Pb is unable to cause magnetic anomalies. The atypical magnetic properties stem from the quantum confinement phenomenon and the relaxation of the surface. The film's long-range sequence presents complexity. The positioning of defects is dictated by the concentration of Pb volume rather than its concentration on the surface. The thin film exhibits a pivotal interaction range of 1.0 nm. A gap between two neighboring spins can lead to fluctuations in the magnetic configuration's stability or instability, contingent on the Pb volume concentration. If not, the impact of long-range order is minimal, and the stability between magnetic and non-magnetic setups is nearly identical.

Magnetism occurs after implantation of Gd ions into nonmagnetic hosts both because of the radiation damage and from the ions themselves. Semiconducting MoS2 is a particularly interesting host because it has a number of native defects that are magnetic and these can combine to form large magnetic clusters. The magnetic hysteresis loops at a range of temperatures, 5K to 80K, were analysed in terms of two components: large paramagnetic magnetic clusters that contributed to the observed, exceptionally large, saturation magnetisation and smaller magnetic clusters that contributed to the large high field linear susceptibility. The number and average magnetic moments of the two types of clusters were evaluated as a function of temperature. The estimated sum of the magnetic moments that contributed to the high field susceptibility exceeded the saturation magnetisation at all temperatures. The total magnetisation due to the sum of the saturated moment plus the contribution from the moments that contribute to the high field susceptibility falls monotonically above 20K, This is understood as being due to the loss of some defect moments due to ionisation.Magnetism occurs after implantation of Gd ions into nonmagnetic hosts both because of the radiation damage and from the ions themselves. Semiconducting MoS2 is a particularly interesting host because it has a number of native defects that are magnetic and these can combine to form large magnetic clusters. The magnetic hysteresis loops at a range of temperatures, 5K to 80K, were analysed in terms of two components: large paramagnetic magnetic clusters that contributed to the observed, exceptionally large, saturation magnetisation and smaller magnetic clusters that contributed to the large high field linear susceptibility. The number and average magnetic moments of the two types of clusters were evaluated as a function of temperature. The estimated sum of the magnetic moments that contributed to the high field susceptibility exceeded the saturation magnetisation at all temperatures. The total magnetisation due to the sum of the saturated moment plus the contribution from the moments that contribute to the high field susceptibility falls monotonically above 20K, This is understood as being due to the loss of some defect moments due to ionisation.Magnetism occurs after implantation of Gd ions into nonmagnetic hosts both because of the radiation damage and from the ions themselves. Semiconducting MoS2 is a particularly interesting host because it has a number of native defects that are magnetic and these can combine to form large magnetic clusters. The magnetic hysteresis loops at a range of temperatures, 5K to 80K, were analysed in terms of two components: large paramagnetic magnetic clusters that contributed to the observed, exceptionally large, saturation magnetisation and smaller magnetic clusters that contributed to the large high field linear susceptibility. The number and average magnetic moments of the two types of clusters were evaluated as a function of temperature. The estimated sum of the magnetic moments that contributed to the high field susceptibility exceeded the saturation magnetisation at all temperatures.

Surface modification of Cu current collectors (CCs) is proven to be an effective method for protecting lithium metal anodes. However, few studies have focused on the quality and efficiency of modification layers. Herein, a novel home‐made filtered cathode vacuum arc (FCVA) co‐deposition system with high modification efficiency, good repeatability and environmental friendliness is proposed to realize the wide range regulation of film composition, structure and performance. Through this system, ZnMgTiAl quaternary alloy films, which have good affinity with Li are successfully constructed on Cu CCs, and the fully enhanced electrochemical performances are achieved. Symmetrical cells constructed with modified CCs maintained a fairly low voltage hysteresis of only 13 mV after 2100 h at a current density of 1 mA cm−2. In addition, the capacity retention rate is as high as 75.0% after 100 cycles in the full cells. The influence of alloy films on the dynamic evolution process of constructing stable artificial solid electrolyte interphase (SEI) layer is revealed by in situ infrared (IR) spectroscopy. This work provides a promising route for designing various feasible modification films for LMBs, and it displays better industrial application prospects than the traditional chemical methods owing to the remarkable controllability and scale‐up capacity.

Lattice thermal conductivity ($\kappa_{\rm L}$) is a crucial characteristic of crystalline solids with significant implications for practical applications. While the higher order of anharmonicity of phonon gas model is commonly used for explaining extraordinary heat transfer behaviors in crystals, the impact of exchange-correlation (XC) functionals in DFT on describing anharmonicity has been largely overlooked. Most XC functionals in solids focus on ground state properties that mainly involve the harmonic approximation, neglecting temperature effects, and their reliability in studying anharmonic properties remains insufficiently explored. In this study, we systematically investigate the room-temperature $\kappa_{\rm L}$ of 16 binary compounds with rocksalt and zincblende structures using 8 XC functionals such as LDA, PBE, PBEsol, optB86b, revTPSS, SCAN, rSCAN, r$^2$SCAN in combination with three perturbation orders, including phonon within harmonic approximation (HA) plus three-phonon scattering (HA+3ph), phonon calculated using self-consistent phonon theory (SCPH) plus three-phonon scattering (SCPH+3ph), and SCPH phonon plus three- and four-phonon scattering (SCPH+3,4ph). Our results show that the XC functional exhibits strong entanglement with perturbation order and the mean relative absolute error (MRAE) of the computed $\kappa_{\rm L}$ is strongly influenced by both the XC functional and perturbation order, leading to error cancellation or amplification. The minimal (maximal) MRAE is achieved with revTPSS (rSCAN) at the HA+3ph level, SCAN (r$^2$SCAN) at the SCPH+3ph level, and PBEsol (rSCAN) at the SCPH+3,4ph level. Among these functionals, PBEsol exhibits the highest accuracy at the highest perturbation order. The SCAN-related functionals demonstrate moderate accuracy but are suffer from numerical instability and high computational costs.

This study investigates the effects of applied tensile and compressive stresses on the evolution of defects in He- irradiated silicon carbide (SiC) materials. By combining experimental studies with density-functional theory (DFT) simulations, we systematically analyzed the microstructural changes and defect formation mechanisms in SiC under stress. The research focused on He irradiation of SiC at 750 degrees C, with a fluence of 1 x 1017 1 7 He/cm2. 2 . The results revealed that the strain resulting from radiation damage depends on the applied stress during irradiation. Moreover, the formation of platelets is influenced by this applied stress: tensile stress promotes platelet growth, while compressive stress inhibits it. DFT simulations further supported these experimental findings by showing that under tensile strain, both carbon vacancies (Cv) and He atoms exhibit low energy barriers for migration. This phenomenon facilitates platelet growth, aligning well with the observations made in the experiments. However, when considering applications like semiconductor thin film transfer, such as the Smart-cut technique, He implantation under tensile stress can actually be advantageous. This approach enables the use of lower He fluence, which in turn reduces the overall cost of the operation. By strategically leveraging the effects of tensile stress on He implantation, it becomes possible to optimize processes like Smart-cut for more efficient and cost-effective thin film transfer in semiconductor manufacturing.

In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H+ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the DI optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of DI defects. The optical transition of the defect SiC(CSi)2 from q = 0 to q = 1 is considered the experimental value of the DI defect center.

Magnetism in two-dimensional materials is of great importance for exploring new physical phenomena and developing novel devices in nanoscale. It's still a challenge to induce robust room temperature ferromagnetism in monolayer transition metal dichalcogen compound materials. In this paper, high quality monolayer MoS2 was prepared by chemical vapor deposition and low energy Cu ions were implanted into MoS2 via ion implantation. The surface morphology, chemical states, optical and magnetic properties were systematically investigated. Robust room-temperature ferromagnetism with saturation magnetization as high as 58 mu B/Cu (similar to 2148 emu/cm3) was successfully induced in monolayer MoS2 after Cu implantation. Moreover, the magnetic properties are weakly temperature dependent, which is clearly the characteristic of defect-induced magnetism. First principles density functional theory calculations reveal that various structural defects, including nanohole, CuMo, Cu-i + V-S and CuMo + V-S can induce high magnetic moments. Meanwhile, CuMo and Cu-i + VS have lower formation energies and may contribute significantly to the extremely large magnetism in the implanted monolayer MoS2. Our work has demonstrated that through defects engineering by Cu implantation, robust room temperature ferromagnetism can be achieved in monolayer MoS2, which provides a potential way to induce large magnetization in other transition metal dichalcogen compound materials, and opens up new opportunities for their applications in nano-spintronics.

Gd-doped and (Al, Gd) codoped ZnO films were prepared by ion implantation and radio frequency magnetron sputtering. The resulting Gd-doped and (Al, Gd) codoped ZnO films were investigated with respect to their structural, electrical and magnetic properties. Room temperature ferromagnetism was obtained for all the doped films and the magnetization shows carrier concentration-dependent behavior. Two different regions can be divided in light of carrier concentration in which the bound magnetic polaron model and carrier-mediated exchange mechanisms produce a marked effect respectively in establishing the long-range ferromagnetic order. The first principle calculations reveal that the magnetic moment of (Al, Gd) codoped ZnO is higher than that of Gd-doped ZnO, and the ferromagnetic states of doped ZnO systems are more stable in the near configuration. Our results confirm that appropriate electron doping can effectively enhance the magnetic moment of the Gd-doped ZnO by controlling its concentrations, which may pave ways for preparing DMS with high magnetic moment using rare earth and group III elements as dopants.

The orthorhombic phase of molybdenum ditelluride(Td-MoTe2) is regarded as a topological Weyl semimetal, which have generated considerable interest. It is an important system both from a fundamental physical point of view and for potential applications. In this paper, several defects in hydrogen (H) and helium (He) ions irradiated Td-MoTe2 are investigated in detail by using density functional theory (DFT). We study the electronic properties of the defects by analyzing the electron dispersion curves and density of states. In addition, the formation energy for different defects is evaluated and compared. It is found that various defects have different effects on the topological properties. Low concentrations of interstitial defects IH and IHe do not affect the topological properties of MoTe2, while vacancy and substitution defects destroy part of the Weyl nodes, and the Fermi level shifts and partial band separations of these defects. Comparison of formation energies indicates that H interstitial defects are the most easily formed defects among all defects and the most stable defect structure.

The microstructural, electrical and magnetic properties of Gd-doped and (Al, Gd) codoped Zn-polar and Opolar ZnO wafers manufactured by the ion implantation method are systematically and comparatively investigated. We report an intrinsic ferromagnetic behaviour of Gd-implanted polar ZnO wafers enhanced by Al codoping. It was found that the saturation magnetization for the doped O-polar ZnO wafer is stronger than that of the implanted Zn-polar ZnO wafer. The introduction of Al ions into Gd-implanted polar ZnO enables a further improvement in the ferromagnetism that is directly relevant to the carrier concentration. This finding suggests that the carrier-mediated exchange mechanism may account for the establishment of the long-range ferromagnetic order in the doped ZnO wafers. First-principles calculations confirm that the interaction between the Gd-4 f state and the O-2p state is stronger in oxygen polar ZnO, producing a higher magnetic moment. The increase in the magnetic moment of (Al, Gd) co-implanted ZnO is mainly derived from hybridization of the Al and O orbitals. Our results confirm that larger ferromagnetism can be obtained in Gd-doped O-polar ZnO wafers and that the magnetization can be effectively improved by controlling the electron doping concentration, which highlights the viability of developing spintronic devices based on polar ZnO by codoping magnetic ions and group III elements.