Near-infrared image sensors are widely used in fields such as material identification, machine vision, and autonomous driving. Lead sulfide colloidal quantum dot-based infrared photodiodes can be integrated with sil & hybull; icon-based readout circuits in a single step. Based on this, we propose a photodiode based on an n-i-p structure, which removes the buffer layer and further simplifies the manufacturing process of quantum dot image sensors, thus reducing manufacturing costs. Additionally, for the noise complexity in quantum dot image sensors when capturing images, traditional denoising and non-uniformity methods often do not achieve optimal denoising re & hybull; sults. For the noise and stripe-type non-uniformity commonly encountered in infrared quantum dot detector imag & hybull; es, a network architecture has been developed that incorporates multiple key modules. This network combines channel attention and spatial attention mechanisms, dynamically adjusting the importance of feature maps to en & hybull; hance the ability to distinguish between noise and details. Meanwhile, the residual dense feature fusion module further improves the network's ability to process complex image structures through hierarchical feature extraction and fusion. Furthermore, the pyramid pooling module effectively captures information at different scales, improv & hybull; ing the network's multi-scale feature representation ability. Through the collaborative effect of these modules, the network can better handle various mixed noise and image non-uniformity issues. Experimental results show that it outperforms the traditional U-Net network in denoising and image correction tasks.

Integrating multiple optoelectronic functions into a single photodetector is highly desirable for next-generation intelligent optoelectronics, yet remains challenging due to the reliance on complex device architectures and elaborate material engineering. Here, we demonstrate that realignment of the energy band-induced electric field enables a simple type-II van der Waals heterojunction composed of indium selenide and black phosphorus (InSe/BP) to realize gate-reconfigurable bipolar photovoltaic and adaptive photoconductive operation. Under negative gate bias, electrostatic band reshaping drives a transition from type-II to type-I alignment while significantly enhancing the built-in electric field at the InSe/BP interface, leading to a strong positive photovoltaic performance and effective suppression of dark current, with a photocurrent on/off ratio exceeding 105. Conversely, a positive gate voltage restores the type-II band alignment, yielding a negative photovoltaic response while simultaneously activating a high-gain photoconductive regime. Beyond bipolar photovoltaic operation, an essential functionality for in-sensor computing, the gate tunable-adaptive photoconductive mode enables high-contrast imaging across both bright and dim illumination conditions. This work establishes energy-band realignment as a powerful and scalable strategy for multifunctional, gate-reconfigurable photodetection, offering a promising platform for intelligent imaging and adaptive vision systems.

The kagome lattice has long been a subject of fascination for physicists due to its rich physics, encompassing phenomena such as superconductivity, charge density waves, and flat bands. In this work, we report the discovery of a novel ferroelectricity-induced dual-breathing mode in the kagome semiconductor Nb3I8. This dual-breathing mode involves both intralayer and interlayer breathing motions that are driven by the polarization within the layers. We demonstrate that, both theoretically and experimentally, such a breathing pattern will disappear in the absence of ferroelectric polarization in each layer. This discovery not only broadens our understanding of complex interactions within kagome lattices but also paves the way for the development of new types of electronic devices based on ferroelectricity.

Polymer/metal-coated hollow waveguides (HWGs) have emerged as a transformative platform for terahertz (THz) trace gas sensing, which integrate THz wave transmission and gas wave interaction within a single compact structure. However, existing externally Ag-coated HWG-based acetonitrile (CH3CN) sensors are fundamentally limited by inherent structural bottlenecks, restricting their detection limit to 10 ppb and hindering practical field deployment. To address this critical challenge, we develop a low-loss, highly flexible PP/Ag-coated HWG, and demonstrate its capability to push room-temperature CH3CN sensing to the 100 ppt-level. Targeting the characteristic absorption peak of CH3CN at 275.6 GHz, we optimize the dual wavelength ultraviolet activation and silver-plating processes, enabling the fabrication of 200 cm-long HWGs with a low transmission loss of 0.96 dB/m. Systematic experimental investigations across 50∼200 cm waveguide lengths and 10∼20 cm bending radii identify the optimal configuration: a 150 cm HWG coiled at a 20 cm radius. The optimized sensor achieves a record LOD of 100 ppt for CH₃CN, with a high sensitivity of 0.0134 dB/ppb, ultrafast response/recovery times of 3.5/4.0 s, excellent selectivity against 8 common interfering gases, robust thermal stability from -78.5 to 60°C, and long-term reliability. This work breaks the LOD bottleneck of room-temperature CH₃CN sensors and provides a versatile, fully engineerable platform for miniaturized high-performance THz gas sensors.

Self-assembled molecules (SAMs) are promising hole-selective layers for high-performance perovskite tandem solar cells. However, their inhomogeneous distribution and disordered packing on substrates lead to interfacial energy losses, limiting further improvements in efficiency and stability. Here, we design a SAM, Me-Ph2mPACz, through meta-disubstitution of dimethylcarbazole moieties on a phenyl linker. Compared to its monosubstituted carbazole counterpart, Me-PhpPACz, Me-Ph2mPACz exhibits stronger adsorption energy and suppresses intermolecular hydrogen bond interaction via π-π stacking interactions. This inhibits the formation of large micelles, promoting a uniform, ordered and thermoresistant hole-selective layer. The resulting multilayer configuration retards crystallization and alleviates residual stress in the perovskite film, thereby reducing non-radiative recombination at the buried interface and enhancing hole extraction. The implementation of Me-Ph2mPACz as the hole-selective layer in 1.68 eV perovskite solar cells reduces interfacial non-radiative losses from 168 mV to 124 mV, accompanied by an increase in power conversion efficiency from 21.82% to 23.14%. The corresponding perovskite-silicon tandem solar cells achieve a champion PCE of 33.40% (certified 32.45% at National Renewable Energy Laboratory, NREL). Furthermore, encapsulated tandem devices based on Me-Ph2mPACz demonstrate exceptional stability, retaining 83% of their initial efficiency after 1000 h of maximum power point tracking under one-sun illumination at 85 °C in air. This work opens an avenue for designing high-performance and durable self-assembled molecules for perovskite tandem photovoltaics.

The p-type and n-type transistors are the basic components for building CMOS electronic devices for logic circuits. Most two-dimensional materials are n-type due to strong electron doping by intrinsic structural defects. Notably, the p-type conductivity of MoS2 is hardly achievable by the limited electric field modulation from the low dielectric constant of Si/SiO2. However, through strong dielectric screening of a high dielectric constant substrate and powerful polarization electric field of ferroelectric material, the p-type transition of MoS2 can be realized. In this paper, with the help of ferroelectric field modulation of high dielectric constant P(VDF-TrFE), a significant modulation of the band structure of MoS2 is realized, and finally, a flexible p-type modulation of MoS2 is obtained. The band changes and electrical properties of MoS2 on three different dielectric constant substrates, including Si/SiO2, hBN, and P(VDF-TrFE), were quantitatively studied with Kelvin probe force microscopy (KPFM). Fermi level changes and band n-p transitions of MoS2 under ferroelectric modulation were also systematically investigated by KPFM. The ferroelectric modulation of the MoS2 Fermi level can realize a wide range of flexible modulation up to nearly 900 meV. This work reveals the device physics of the realization of p-type transport from the band perspective and provides an effective and viable reference for p-type modulation of other two-dimensional materials. It also provides a boost for the application of MoS2 in high-performance electronic and optoelectronic devices.

Ferroelectric memory, with its promise of low power consumption, high writing speed and exceptional endurance, requires the scaling of ferroelectric films to ultrathin dimensions—often just a few atomic layers thick. However, such extreme thinning risks destabilizing or even erasing electric polarization, mainly due to the detrimental depolarization field. Remarkably, certain ferroelectrics exhibit an intrinsic immunity to this effect, as predicted theoretically and confirmed experimentally. Examples include improper ferroelectrics, hyper ferroelectrics, engineered heterostructures, and low-dimensional von der Waals ferroelectrics. This review systematically examines these unique materials, unravelling the fundamental physics behind their polarization robustness and the mechanisms enabling them to resist the depolarization field. By bridging theory with experimental advances, we aim to inspire the design of next-generation ferroelectrics capable of overcoming critical challenges encountered in practical ferroelectric memory devices.

Over the past decade, as an important narrow-band semiconductor material with unique physical and chemical properties, InSb shows great potential for applications in several cutting-edge scientific and technological fields, such as infrared detection, terahertz technology, and quantum computing. In this paper, we comprehensively review the major growth methods of InSb materials, including Czochralski (CZ) method, molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and CBE method. The growth mechanism, process characteristics, advantages and disadvantages of each method, as well as its performance in practical applications are discussed in detail. Meanwhile, the article provides an in-depth analysis of the key performance indicators of InSb materials in high-performance device applications and summarizes the challenges faced in large-scale production, impurity control, crystallization quality and large-area uniformity. Finally, it looks into the future development direction of InSb growth technology, and proposes strategies to further enhance the performance and application scope of InSb materials through the exploration of novel growth methods, optimization of existing technologies, and development of composite materials to meet the needs of future scientific and technological development.

Organic solar cells represent a promising third-generation photovoltaic technology, yet their efficiency remains constrained by the limited development of high-performance polymer donors (PDs). Here, we propose a universal design strategy of electron-withdrawing group peripheralization (SEP), which can produce pronounced electrostatic potential contrast and enhanced backbone dipoles, thus bringing multiple synergistic effects: (a) significantly reduce binding energy of the materials (24.56 meV for the developed material in this work), making exciton dissociation no longer dependent on the D/A interfaces, (b) improve intrachain charge transport through amplified conjugation-aligned dipoles, and (c) strengthen intermolecular coupling via spatially separated charge centers. Furthermore, based on this strategy, a high-performance polymer donor PBDTT-perp was constructed, which produced high efficiency of 20.13% and excellent stability in layer-by-layer processed binary device, significantly outperforming conventional EWG-centralized analogs (10.72%). More interestingly, the SEP principle is applicable to all reported high-performance materials, which will provide important guidance for the design of next-generation PDs compatible with high-efficiency OSCs architecture.

Bound states in the continuum (BIC) leverage symmetry-protected resonant modes for exceptional light confinement, yet their leaky modes are almost underutilized. Meanwhile, multiple quantum well (MQW) structures face limited optical absorption due to strict transition selection rules. We demonstrate the regulation of the leaky mode of quasi-BIC (QBIC) by analyzing MQW-vertical field coupling, revealing that increasing asymmetric parameters enhances the transverse leakage of wave vector and optical field nonlinearly. This drives a nonlinear photoresponse as increasing asymmetry parameter, while linear scenario with incident angle and external bias voltage. We then develop an optoelectrical fusion neuromorphic processor, implementing QBIC-MQWs into an artificial neural network for machine vision applications.Graphical abstract. This work presents a proof-of-concept BIC-MQW device, in which the photocurrent characteristics are leveraged to realize image processing functionalities

In the original publication [...].

Achieving ultranarrow spectral linewidth and broad spectral tunability in light-emitting diodes (LEDs) remains challenging due to linewidth broadening from compositional and size heterogeneities. Here we report an interface-regulated vapour crystallization strategy that enables precise control over the spectral linewidth of solution-processed halide perovskite thin films. Underlying materials that exhibit minimal molecular interactions with perovskite precursors, exemplified by poly(9-vinylcarbazole), facilitate smooth ion diffusion and crystallization assisted by dimethylformamide vapour. This mechanism leads to perovskite films with both horizontal and vertical homogeneity and low inhomogeneous broadening comparable to that of perovskite single crystals. We demonstrate perovskite films with ultranarrow photoluminescence linewidths of 13.6 nm, 13.7 nm, 13.8 nm and 14.4 nm for emissions at 464 nm, 474 nm, 483 nm and 522 nm, respectively. This enables us to achieve sky-blue perovskite LEDs with narrow electroluminescence linewidths of 14.7 nm and a peak external quantum efficiency of 24.6%, with comparable linewidths and performance in LEDs spanning the pure blue to pure green. This work offers a practical and scalable strategy to realize narrow spectral linewidth, broad spectral tunability and high performance in thin film LEDs.

Te displays the potentials in chirality, anisotropic electronics, and optoelectronics owing to its unique chiral chain lattice structure. However, the specifically oriented growth is still challenging thanks to a lack of lattice-matched substrates. Herein, (100)-oriented Te single-crystalline films are grown via a van der Waals epitaxial (vdWE) mode. Wafer-scale and high-crystal quality with a low full width at half maximum (0.25°) and an ultrahigh hole Hall mobility (1267.2 cm2V-1s-1) are yielded in the 58.2 nm. In-plane anisotropic transport is present in these vdWE films, and exceptional current switching is displayed in the ones below 21.3 nm. Photoresponse performance increases with the film thickness while the polarization effect is absent above the 23.5 nm. Broadband detection from 420 to 2000 nm is demonstrated. Peak responsivity, detectivity, and external quantum efficiency reach 2.97 × 104 A/W, 1.21 × 1013 Jones, and 7.12 × 104% at 520 nm in the 58.2 nm field-effect transistor (FET). Dual-symmetric polarization effect is revealed in the 11.2 nm FET detectors with a polarization ratio of 1.11 at 1650 nm and 1.04 at 638 nm. This work presents a scalable growth route for (100)-oriented Te and highlights the potential in integrated, high-speed, and polarized devices.

Resistance random access memory (RRAM) has emerged as a critical device for neuromorphic computing, offering significant potential for synaptic simulation. Nevertheless, it remains challenging to control the stochastic nature of the conductive filaments (CFs) in oxide-based artificial synapses, leaving a critical gap between biological plasticity and neuromorphic reliability. Here, inspirated from the directional guidance of growth factors and the mechanical traction exerted by glia during axonal outgrowth, and apply these biological principles into a topo-epitaxial self-assembly protocol that steers every step of CF growth. By prescribing both the ionic trajectory and the structural registry of the nascent filament, we suppress intrinsic transport stochasticity and enforce crystallographic coherence. The result is atomic-precision control over ion migration and single-crystalline CF formation-achieved within standard CMOS flows, without extra masks or exotic processing. Finally, by constructing a behavior-level model based on the habituation characteristics of oxide artificial synapses, the application in obstacle avoidance is successfully presented. Our synapses empower embodied AI robots with rich, robust, and self-adaptive behaviors.

Van der Waals (vdW) lamination, a low-energy physical stacking technique, holds great promise for two-dimensional (2D) electronics and future three-dimensional (3D) integration. However, achieving ultra-clean interfaces-free from interlayer molecular contaminants-remains a significant challenge. Here, we introduce an elastic bevel stamp-assisted thermal lamination (EBTL) technology, operated at 150 °C, which actively self-expels interlayer molecular impurities (e.g., water, oxygen), eliminating bubbles, wrinkles, and defects, yielding pristine vdW interfaces. Through nanomechanical analysis, we optimize key parameters of bevel stamp, such as angle and size, to ensure clean and damage-free lamination of 2D monolayer at large scales. This method enables reliable preparation of ultra-clean 2D stacked structures with an average interface yield >95%. Devices fabricated with it exhibit improved performance compared to conventional methods, as evidenced by hysteresis-free hBN top-gate transistors (∼10 mV) and ultrafast hetero-diodes (470 ns). The lamination of wafer-scale monolayers, twisted bilayers, and complex superlattices can be readily achieved with clean interfaces. It is also applicable to clean lamination of various building blocks, such as 2D channels, 3D metals, and dielectrics. We therefore demonstrate a fully vdW-laminated 2D transistor array (2400 transistors on a 0.25 cm2 area), where all components are stacked along the z-direction, achieving low device-to-device variability. Our work provides a promising approach for clean vdW integration and high-performance vdW electronics.

Layer-by-layer (LBL) all-polymer solar cells (all-PSCs) feature flexible modulation of donor/acceptor morphology and crystallinity, a unique merit for unlocking maximum material potential toward high efficiency, while rational selection of donor/acceptor regulators is crucial for advanced device fabrication. In this study, 1-methoxynaphthalene (1-MeON) is identified as an additive capable of inducing ordered stacking of classic polymer donors (D18, PM6 and PBQx-TF). Building on this, we employed distinct additives to independently optimize the ordered stacking/aggregation of polymer donor and acceptor in LBL all-PSCs, as well as the vertical phase distribution, which well match the excellent charge management and deliver an outstanding efficiency of 20.03% (certified 19.60%) for rigid and 18.76% for flexible binary devices. Importantly, this combined strategy further enables thickness-tunable donor layers to balance efficiency and transmittance, facilitating high-performance semitransparent devices. The rigid semitransparent all-PSC achieves an efficiency of 16.07% with transmittance of 20.1%, while the flexible counterpart reaches an efficiency of 15.17% and retains over 96% of its initial efficiency after 1000 bending cycles. Moreover, these semitransparent devices also demonstrate excellent thermal insulation (reducing temperature over 10 degrees celsius). This achievement establishes a pivotal paradigm for high-efficiency all-PSCs and verifies their immense practical application in sustainable smart windows.