Chameleons achieve vivid and dynamic color changes through iridophore layers containing oriented guanine nanocrystals, whose controlled orienting and spacing govern reflection, polarization, and optical anisotropy. Inspired by this natural strategy, we translate the principle of orientational order into solution-processed optoelectronics by assembling colloidal quantum wells (CQWs) into face-down monolayers. Gas-liquid interfacial self-assembly drives CQWs to align their basal planes parallel to the interface, coherently orienting their intrinsically in-plane dipoles across macroscopic films. Chloride ligand exchange further modulates interparticle spacing and reorients surface dipoles, thereby leading to type-II band alignment at the CQWs/ReSe2 heterojunction, which facilitates enhanced charge separation. The resulting photodetectors achieve a polarization ratio of 40.81, which is more than 20-fold higher than that of pristine ReSe2 detectors, along with a response time of 420 & micro;s and a specific detectivity exceeding 1011 Jones. Beyond quantitative metrics, the devices enable high-contrast polarization-resolved imaging and quaternary polarization-encoded optical communication, faithfully reproducing input signals. By coupling the intrinsic anisotropy of CQWs with bioinspired orientation control, this work demonstrates how nanoscale units can be transformed into hierarchically oriented architectures that replicate and extend nature's polarization strategies, establishing a general design pathway toward solution-processable, intelligent polarimetric optoelectronics.

High-performance thin-film transistors (TFTs) using a micro-textured In2O3/indium-gallium-zinc oxide (IGZO) heterojunction structure were proposed and fabricated via magnetron sputtering. Combining the superior conductivity of the In2O3/IGZO TFTs with the energy-level alignment suggests the formation of a quasi-2D electron gas at the interface. The optimized micro-textured In2O3/IGZO TFTs demonstrate a high on-state current of 0.2 & micro;A & micro;m-1 at a low applied drain voltage (0.1 V), a high mobility of 65.3 cm2 V-1 s and a large on/off current ratio of 10(7). Under positive gate bias stress, the threshold voltage shift is reduced to 2.6 V, which exhibits robust stability. Technology Computer Aided Design simulations reveal the electron concentration distribution and current flow paths in the device, which demonstrate a charge spatial modulation effect via the micro-textured heterostructure. During device turn-on and turn-off, these simulations demonstrate that the micro-textured heterostructure can achieve effective charge modulation. The excellent transistor features of the devices demonstrate the feasibility of our proposed micro-textured channel IGZO TFT, which will provide a viable solution to the longstanding challenge of simultaneously achieving both high mobility and high on/off ratio in In2O3 TFTs, accelerating the practical application of transparent IGZO TFTs.

We demonstrate, to the best of our knowledge, the first experimental realization of continuous wavelength tuning of noise-like soliton molecule (NLSM) in an L-band multiwavelength passively mode-locked figure-eight fiber laser. The laser employs a nonlinear amplifying loop mirror integrated with a segment of polarization-maintaining fiber, which simultaneously functions as an artificial saturable absorber and a tunable comb filter for NLSM generation. By appropriately adjusting the pump power and polarization controllers, we achieve broadband spectral tuning of NLSM spanning from 1571.8 nm to 1602.0 nm, corresponding to a record 30.2 nm tuning range in the L-band mode-locked laser. This work establishes a new paradigm for dynamically wavelength-tunable soliton complexes in ultrafast fiber laser systems.

A WSe 2 /h-BN/Gr heterostructure local gate photodetector: synergistic modulation of local graphene gate voltages and optical signals enables reconfigurable logic operations, optical communication, and image recognition in one architecture.

Defect engineering via oxygen vacancy modulation has enabled a remarkable persistent photoconductivity effect in wide-bandgap semiconductors, spawning diverse artificial synapse architectures. However, stochastic defect distributions fundamentally limit device reproducibility and energy efficiency. Here, we advance defect engineering through an "ordered donor regulation" strategy, where Ga doping in single-crystalline ZnO microwires selectively passivates random oxygen vacancies, preserving nonvolatile memory while transforming transport from disordered defect-dominated to stable donor-regulated mode. This deterministic transition eliminates stochastic carrier-trapping kinetics, enabling precise conductance modulation at an ultralow bias of 300 μV; notably, a minimum energy consumption of 2.8 fJ per pulse is achieved at 1 mV─rivaling biological synapse efficiency. The device exhibits exceptional synaptic plasticity, characterized by a robust short-to-long-term memory transition; a nonvolatile retention time exceeding 15,000 s, as well as a 14% improvement in the paired-pulse facilitation index and an EPSC amplitude 3.3 times that of pristine ZnO. A three-layer neural network achieves 94.44% and 83.41% recognition accuracy on MNIST and Fashion-MNIST data sets, respectively. This work establishes ordered donor regulation as a paradigm for precision defect engineering in wide-bandgap semiconductor synapses, laying the material foundation for energy-efficient neuromorphic computing.

Physical unclonable functions (PUFs) rely on randomness, stability, and uniqueness of physical systems, thereby protecting information from unauthorized access. This study presents an advanced optical PUF tag that uses Raman signals to detect multiple peaks, creating a multilayered encryption strategy that can enhance security significantly. By employing microwires (MWs) from various materials, this approach enables dual encryption through distinctive Raman peaks. Each PUF tag generates two unique keys (Ga2O3 and ZnO) based on Raman mapping, and these keys are dynamically assigned as either key A (primary) or key B (secondary) to further bolster security level. Analysis of the pixel-level data indicates high consistency between keys from the same tag and notable differences between different tags. This dual-encryption strategy combined with dynamic key assignment provides a robust approach for enhancing information security and anticounterfeiting performance.

The development of energy-efficient and high-fidelity artificial synapses is crucial for next-generation neuromorphic computing. Here, we present a solar-blind ultraviolet (254 nm) programmable synaptic transistor based on an a-IGZO/h-BN/multilayer graphene (MLG) heterostructure. The atomically smooth h-BN layer provides a defect-suppressed tunneling dielectric, while MLG functions as a charge-trapping and gain layer, enabling enhanced persistent photoconductivity in a-IGZO. The device exhibits a large hysteresis window, high on/off ratio (105), low subthreshold swing (0.24 V/dec), and high carrier mobility (11.478 cm2/(V·s)). Under 254 nm illumination, a single synaptic event consumes only 51.8 pJ, while paired-pulse facilitation reaches 309.55% at ΔT = 1 s, demonstrating low-energy, low-noise optical synaptic modulation. Leveraging these properties, LTP/LTD currents were mapped onto a VGG-8 neural network for CIFAR-10 image recognition, achieving 90.4% accuracy. Furthermore, the high PPF enabled stable, interference-resistant optical information transmission using ASCII-coded pulses, with maximum postsynaptic current deviation below 0.4 nA. These results highlight a versatile, mixed-dimensional oxide/2D-material platform for high-performance, solar-blind optoelectronic neuromorphic systems.

Practical application of solar-blind UV (220-280 nm) detectors in multiples of fields is key problem in UV optoelectronic technology. Herein, the performance of mix-structure Ga2O3/ZnO and mix-structure Ga2O3/Ga doped ZnO hetero-structure detectors are firstly optimized, optimized mix-structure Ga2O3/ZnO detector possesses high response (3010.2 A/W@235 nm, 40 V), low Idark (6.97× 10-11 A @40 V), high IUV/Idark ratio (105 at 4.8 µW/cm2 235 nm) simultaneously. The mechanisms of the device under different conditions are explored. Avalanche breakdown mechanism induced fast response and decay speeds (tr: 0.38 µs: td1: 2.47 µs) at pulse UV laser in the device under high voltage, which favored its application in UV communications. Fast response and decay speeds of the device at faint 254 nm light (tr: 25.95 s: td1: 23.05 s), is beneficial for its application in missile alarm, electrical fire alarm, ozone alarm, and so on. Because of high density of Holes are trapped within the device under 1 V bias and faint deep UV condition, the mix-structure Ga2O3/ZnO heterostructure detector presented good performance in simulating complicated PPF、LTP behavior of synapses in human brains and ANN. The difference response and recovery mechanism of the Ga2O3/ZnO hetero-structure detector under different conditions, is especially meaningful in actual applications of the device in various scenarios.

Neuromorphic devices, drawing on the operational principles of biological neural systems, demonstrate the potential for energy-efficient operation at the system level while enhancing real-time processing capabilities and adaptability. Diamond, with its ultra-wide bandgap, high thermal conductivity, and chemical and radiation resilience, provides a robust platform for multifunctional neuromorphic electronics. Here, we demonstrate an opto-thermal dual-mode neuromorphic device based on hydrogen-terminated diamond, highlighting diamond as a material platform for neuromorphic functionalities under harsh environments, which integrates environmental perception, synaptic computation, and adaptive self-protection within a single device. Surface two-dimensional hole gas and defect-mediated carrier trapping enable persistent photoconductivity and temperature-dependent transport, producing synaptic behaviors such as paired-pulse facilitation, spike-timing-dependent plasticity, and short-to-long-term memory transition. Neural network simulations achieve 92.4% accuracy in handwritten digit recognition. Simultaneously, the intrinsic temperature-sensitive conductivity allows real-time thermal perception and adaptive state regulation up to 200 degrees C, establishing an integrated "perception-computation-protection" loop. These results highlight diamond's intrinsic material advantages as a robust and multifunctional platform for neuromorphic electronics in extreme conditions.

Gallium oxide (Ga2O3) is renowned for its exceptional physical and chemical properties, making it an ideal material for solar-blind photodetectors. In this study, Sn-doped-Ga2O3 microwires (MWs) were utilized to fabricate a type-I heterojunction photodetector with SnSe2. The Sn-doped-Ga2O3 MW/SnSe2 hybrid van der Waals heterojunction exhibits both direct tunneling and Fowler-Nordheim tunneling under positive voltages. By exploiting the Fowler-Nordheim tunneling mechanism at a 6 V bias, the device demonstrates outstanding performance under 254 nm illumination, achieving a rectification ratio of 10(4)-10(5), an ultralow dark current of 0.11 pA, a responsivity of 81.82 A/W, a detectivity of 7.79 x 10(14) Jones, and an exceptionally high external quantum efficiency of 4 x 10(4)%. These impressive characteristics make the heterojunction photodetector highly suitable for high-quality imaging applications. This research offers a promising processing solution for Ga2O3-based optoelectronic devices, further extending their potential for versatile solar-blind detection and imaging applications.

Research on quantum geometric-related effects in antiferromagnetic van der Waals heterostructures has predominantly focused on separating the contributions of Berry curvature and quantum metric through the manipulation of Parity-Time (PT) symmetry. However, the critical role of interfacial symmetry-breaking mechanisms, particularly those emerging from parity inversion symmetry manipulation, has remained underexplored. This study advances the field by investigating the hBN/CrPS4 heterojunction, where the mirror symmetry at the interface is systematically controlled. A significant circular photogalvanic effect is induced through the breaking of mirror symmetry, as evidenced by helicity-dependent photocurrent measurements. Symmetry analysis reveals that the observed difference in left- and right-handed circular photocurrents originates from a Berry curvature dipole, which is directly linked to the broken mirror symmetry. Our research highlights the critical role of interface symmetry breaking in inducing quantum geometric-related effects at magnetic material interfaces and pioneers a new strategy for manipulating interface PT symmetry.

In this study, a gallium oxide (Ga2O3) U-groove gate metal-oxide-semiconductor field-effect transistor (UMOSFET) with a high breakdown voltage (BV) is proposed. Through TCAD simulation, both forward and reverse electrical characteristics are comprehensively investigated. The integration of traps within the current blocking layer (CBL) is suggested to enable effective current blocking. Furthermore, to optimize the BV, the introduction of oxide dielectric pillars on either side of the drift layer is implemented to enhance the potential distribution during breakdown. The forward and reverse electrical characteristics of the device at different temperatures are also investigated. Additionally, by conducting simulation optimizations of different doping concentrations in the drift layer, CBL layer thickness, and trap concentrations, notable achievements are realized, which include a high BV of 865.2 V, low threshold voltage of 2.587 V, and low specific ON-resistance of 19.2 m Omegacm(2). This study presents a novel structural design to foster the potential application and development of Ga2O3 electronic devices.

A tunable, controllable, and reversible photoresponse within a single device holds significant potential for broad-spectrum image detection, convolutional computation, and autonomous systems. This study presents a novel graphene-gated WSe2 heterojunction field-effect transistor (FET), utilizing graphene as a highly transparent gate electrode. By modulating the graphene-gated voltage, which affects the effective bias voltage, the current is redirected into both the graphene and metal electrodes along the WSe2. The device exhibits notable and adjustable positive photoconductance (Vg < 3.25 V) and negative photoconductance (Vg > 3.25 V) under 520 nm illumination. The responsivity of positive photoconductance (Vg = -5 V) and negative photoconductance (Vg = 5 V) values are 427 and 425 mA/W, respectively. Additionally, the device demonstrates excellent performance, with a high fitting exponent (0.99) between power intensity and photocurrent at zero bias due to the photovoltaic effect. Leveraging its controllable and reversible photoresponse, along with the photovoltaic effect, the graphene-gated WSe2 heterojunction FET enables multifunctional applications, including encrypted communication, "OR" logic operations, three-state logic gates and imaging pre-processing. Besides, images can be pre-processed and enhanced by integrating convolutional neural networks. These findings highlight the promising potential of high-performance multifunctional optoelectronic devices.

Moir & eacute; superlattices in van der Waals heterostructures offer a novel approach to manipulating the Bloch wavefunction texture, influencing nonlinear electromagnetic responses like photocurrents. Twisted anisotropic ReS2, with its lower symmetry and inclusion of more independent non-zero nonlinear conductivity tensor elements, emerges as a promising platform for exploring nonlinear photoresponses distinct from highly symmetric hexagonal lattices. This study systematically investigates several novel anisotropic moir & eacute; superlattices based on the twisted ReS2 homojunctions using second harmonic generation (SHG) and nonlinear photoelectric response measurements. It is found that the texture patterns of these anisotropic moir & eacute; superlattices are highly dependent on the twist angle. Especially, the photocurrents exhibit sensitivity to both wavelength and incident direction excited by left- and right-circularly polarized light. In addition, due to the chiral moir & eacute; interface and the contribution of the Berry curvature dipole (BCD), twisted ReS2 homojunctions demonstrate an exceptional circular photogalvanic effect (CPGE) as well. By exploiting the unique photoresponse to polarization, image recognition using vortex beam within a single twisted ReS2 device is achieved. This work not only underscores the potential of quantum geometry through anisotropic moir & eacute; superlattices but also provides valuable insights for the development of advanced intelligent optoelectronic devices.

Alkaline water electrolysis (AWE) is a promising green hydrogen production technology, yet it is hindered by high-cost noble metal catalysts and poor low-cost alternatives. This study shows that 3D-printed martensitic steel, particularly a Ni11.0-Co13.5-Cr3.2-Mo1.2-C0.2-Fe70.9 alloy, becomes a highly efficient AWE electrocatalyst after cyclic voltammetry activation in KOH. Before activation the HER performance improved with higher Co but remained suboptimal, while after activation the alloy exhibited a remarkable enhancement: low overpotential at high current density and a drastically reduced Tafel slope. This improvement stems from surface reconstruction forming a nanoporous structure and a hydroxylated layer, increasing the electrochemically active surface area. This work provides a low-cost, high-performance alternative to noble metal catalysts, advancing green hydrogen scalability for energy and environmental challenges.

The rapid growth of information drives the need for highly integrated, low-power devices, making novel materials and architectures essential. In this study, a complementary circuit is proposed, consisting of P-type WSe2 and N-type MoTe2 field-effect transistors (FETs), which exhibit a rectification ratio of 102. Compared to traditional frequency multipliers, this circuit design not only functions as a frequency multiplier but also operates as a ternary inverter. Compared to conventional CMOS-based designs that interconnect two transistors to achieve multifunctionality, this circuit reduces the required number of components by half. Additionally, while traditional single devices have limited functionality, this circuit offers a richer range of applications. This circuit design functions both as a frequency multiplier and a ternary inverter. By integrating a low operating voltage of 0.7 V with the circuit design, it achieves frequency multiplication up to 3 MHz, surpassing the operating frequencies of traditional frequency multipliers based on 2D material heterojunctions, demonstrating a significant frequency advantage. Furthermore, the operating voltage of 0.7 V is lower than the 1 V or 5 V used in previous studies. Additionally, the circuit supports ternary logic, representing three logic states: "1", "1/2", and "0", enabling the representation of more logic values with fewer devices. Overall, this design provides an innovative and efficient solution for multifunctional electronic devices based on a compact monolithic structure.

Quantum dot light-emitting diodes (QLEDs) hold great potential for next-generation displays, offering outstanding efficiency and exceptional color purity. Nevertheless, their performance remains constrained by poor hole injection and device instability. In this study, a bilayer structure of NiO/NiOx:Mg is proposed for the hole injection layer (HIL) in QLEDs to address these challenges. This bilayer structure enhances the work function, facilitates hole injection, and thereby improves the performance of QLEDs. As a result, the optimized device exhibits nearly twice the current efficiency compared to its NiO-based counterpart, along with an extended T50 lifetime—approximately eight times longer than that of the NiO-based device. Additionally, Mg doping effectively mitigates photoluminescence quenching in quantum dots, and capacitance–voltage analysis, along with other measurements, confirms the reduction of hole injection barriers. These results suggest that employing bilayer HILs significantly improves QLEDs performance, with possible applications in other optoelectronic devices like perovskite solar cells.

Diffractive deep neural networks (D2NNs) based on cascaded phase-only metasurfaces have demonstrated significant potential in all-optical information processing. However, conventional double-layer D2NNs are typically confined to symmetric configurations, limiting their utility in tasks requiring asymmetric optical transformations, such as image demagnification. We propose a compact asymmetric double-layer metasurface architecture optimized by a phase-progressive D2NN (PP-D2NN) network for real-time, subwavelength-scale image demagnification. The method divides second diffractive hidden layer into three functional zones: a central trainable region, a phase-gradient transition zone, and a fixed-phase background. This spatial partitioning strategy enables accurate image reconstruction while reducing the number of trainable elements. A meta-atom library, composed of cylindrical TiO2 nanopillars on a SiO2 substrate, is employed to realize the metasurface design. Compared to standard symmetric double-layer D2NNs, simulations demonstrate that the proposed PP-D2NN reduces the number of trainable diffractive elements by 37.5 % while maintaining comparable image fidelity at a wavelength of 633 nm. In addition, the device supports multi-pattern multiplexing with low crosstalk. These results highlight the potential of our asymmetric diffractive architecture for integrated photonic computing, paving the way for compact, energy-efficient optical neural systems capable of real-time image scaling and parallel inference.

The high-quality semiconductor InGaZnO (IGZO) alloy thin films with different indium (In) elemental contents were deposit utilized magnetron sputtering. The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed, and their performance exhibited significant improvement compared to single layer IGZO TFTs. In the bilayer heterojunction TFT, the field-effect mobility was promoted to 23.5 cm 2 ·V -1 ·s -1 , the switching ratio reached 4.1×10 7 , and the subthreshold swing was reduced to 0.42 V/dec. Moreover, the variation of bilayer TFTs threshold voltage (V th ) was significantly suppressed, Under positive gate bias stress (PBS) and negative gate bias stress (NBS), the threshold shift is reduced to be 1.5 V and -1.1 V, respectively. The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface, which facilitated the accumulation of channel electrons. Additionally, the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering, thereby the performance properties of TFT were enhancing. The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT, which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.

Low-cost and large-area uniform amorphous Ga2O3 (a-Ga2O3) solar-blind ultraviolet (UV) detectors have garnered significant attention in recent years. Oxygen vacancy (VO) defects are generally considered as the predominant defects affecting the detector performance. Reducing VO concentration generally results in both low dark current and low photo current, significantly limiting further improvement of the photo-to-dark current ratio (PDCR) parameter. Herein, a delicately optimized atomic layer deposition (ALD) method is revealed having the capability to break through the trade-off in a-Ga2O3, achieving both low dark current and high photocurrent simultaneously. For a clear demonstration, a-Ga2O3 contrast sample is prepared by magnetron sputtering and compared as well. Combined tests are performed including x-ray photoelectron spectroscopy, photoluminescence, electron paramagnetic resonance and Fourier-transform infrared spectroscopy. It is found that ALD a-Ga2O3 has a lower VO concentration, but also a lower dangling bonds concentration which are strong non-irradiation recombination centers. Therefore, decrease of dangling bonds is suggested to compensate for the low optical gain induced by low VO concentration and promote the PDCR to similar to 2.06 x 106. Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga2O3 detection performance, offering new insights for further promotion of a-Ga2O3 UV detector performance via dual optimization of dangling bonds and VO.